201250888 六、發明說明： 【發明所屬之技術領域】 本發明基本上係有關於離子植入系統（i〇n implantation system) ’特別是關於一種用以在離子植入系統之中避免在 工件上形成凝結的系統、設備及方法。 【先前技術】 半導體工業之中’在諸如離子植入、#刻（etching)、化 學軋相沉積（chemical vapor deposition ; CVD)等電漿式或真 空式半導體製程進行期間，通常使用靜電夾或夾頭201250888 VI. Description of the Invention: [Technical Field of the Invention] The present invention basically relates to an ion implantation system, particularly for avoiding formation on a workpiece in an ion implantation system. Condensed systems, equipment and methods. [Prior Art] In the semiconductor industry, during the plasma or vacuum semiconductor process such as ion implantation, etching, chemical vapor deposition (CVD), etc., electrostatic chucks or clips are usually used. head
(electrostatic clamp or chuck ; ESC)以籍夾 X 件或基板。ESC 的箝夾性能，以及工件溫度控制，已被證實對於處理諸如 石夕晶圓的半導體基板或晶圓係相當重要的。舉例而言，典 型的ESC包含安置於一導電電極上之一介電層，其中半導 體晶圓被置放於ESC之一表面上（例如，晶圓被放置於介電 層之一表面上）。半導體製程（例如，離子植入）期間，其通 常施加一箝夾電壓於晶圓與電極之間，其中晶圓藉由靜電 力被箝夾於夾頭夾緊面之間。 對於某些離子植入製程而言，其需要透過冷卻ESC來 冷卻工件。然而’在較冷的溫度下，凝結可能形成於工件 之上，或者，當工件被從製程J哀境（例如，真空環境）的冰冷 ESC轉移到外界環境（例如，較高壓力、溫度以及渔度之環 境）之時，大氣中的水份甚至可能在工件表面上發生珠結。 例如，在離子植入工件之後’工件通常被轉移入一晶圓承 載室（load lock chamber)之中’而後該晶圓承载室被進行排 4 201250888 氣。當晶圓承載室被開啟以自豆 常暴露至周遭的大出件之時’工件通 门裢的大氣之_ (例如，大氣壓 "空齑、，而T从 r的/皿暖、”潮 县 札)而工件之上可能發生凝έ士。舲魅处7 ，" 積於工件之卜β/ 凝…此凝結可能使得微粒沉 積於工件之上，及/或在工件上留 對祚用F只 7正卸。丨5件（例如， 對作用&域）有不利影響的殘餘物。 種當工件自一寒 工件上之凝結的 因此，在相關領域之中，其有需要一 冷環境被轉移至—較溫暖環境時用以減輕 系統、設備以及方法。 【發明内容】 本發明藉由提出一種用以減輕離子植入系統中之工件 凝結的系統、設備及方法，而克服先前技術之問題。據此， 以下提出簡化之發明摘# ’以對本發明的—些特色提供基 本的理解。此摘要並非本發明的窮盡描述。其既未意欲指 出本發明的關鍵或重要元素，亦未試圖界定本發明之範 _。其目的係以-簡化之形式呈現本發明的一些概念，以 做為後續詳細說明之序幕。 本發明基本上係針對一種於離子植入系統中用以避免 工件上的凝結的系統、設備及方法。此系統包含一來源 (source)，用以形成一離子束、—射束線組件（beamHne assembly)，用以對該離子束進行質量分析、一終端站（end station) ’具有一關聯之第一環境，其中該終端站包含一冰 凍靜電夾頭’用以在來自該離子束之離子之植入期間箝夾 及冷卻工件以及一晶圓承載室，分別與該終端站及一第二 環境選擇性地流體通連。該晶圓承載室包含一用以接受工 201250888 件之平臺，其中該平臺包含一工件溫度監測裝置用以量 二:之溫度，且其中該第二環境基本上具有一高於該第 兄之露點(dew point)。一輔助監測裝置被組構成用以在 =-環境之中量測一溫度及相對渥度，從而量測及/或叶 ==，而一控制器被組構成用以決定當工件自該晶圓 承載至轉移至該第二環境時凝結將不形成於工件上之一工 係根據來自該工件溫度監測裝置和輔助溫度監 資料而做出該衫，諸如該第二環境之中的露點。 因此，針對前述及相關目標之達成’本發明包含完整 說明於下且特別指明於申請專利範圍之中的特徵。以下說 明配合附錄圖式詳盡闡述本發明之特定例示性實施例。缺 2 ’該4貫施例係代表可以運用本發明之原理的許多方式 钚明沾^ 了配。圖式的實施方式詳盡解說，本 Λ 、目的、優點及新穎之特徵將更趨於明顯。 【實施方式】 本發明基本上係針對在料植人系統中㈣ :夹頭以避免在工件上發生凝結。未監測工件溫度或區； 路點的傳統型工件加溫方式可能導致冗長的排氣時間，從 =:=具有負面的影響，明將描述-種= I瓜度及晶圓承載室外部之區域露點之系 :產:=法’一資訊最…待時間一: 本文參照圖式描述本發明，其中類似的參考編號在 =以表不類似之構件。其應理解，該等特色之 201250888 說明僅係例示性質，不應被解讀為有限制之意義。在以下 的說明之中，基於說明之目的，許多具體細節均加以閣述， 以提供對本發明之全盤了解。然而，相關領域之熟習者應 顯然可知，此等具體細節對本發明之實施並非絕對必要。~ 依據本揭示之一特色，圖丨例示一示範性真空系統 100〇本實例中的真空系統100包含一離子植入系統， 然而其亦可以涵蓋許多其他型式之真空系統，諸如電聚處 理系統，或其他半導體製程系統。舉例而言，離子植入系 統101包含一總端頭i 〇2、一射束線組件丨〇4以及一終端站 1〇6。-般而t ’總端頭102中之一離子源1〇M皮耗接至一 電源110 ,以離子化一掺雜氣體並形成一離子束丨以。離子 束112.被導控穿過一射束操控裝置114 ’並朝向終端站ι〇6 離開—穿孔116。在終端站1〇6之中，離子束112撞擊一工 件11 8(例如’ 一半導體晶圓、顯示面板...等等），工件1 1 8 被選擇性地箝夾或固定至關聯該終端站之一第—環境in 中之-靜電夾頭(ESC)120。舉例而言，第一環境122包含 由-真空系統123所產生之一真空。一旦被欲入工件⑴ 的晶格中之後，植入之離子會改變該工件之物理及/或化學 特性。因A，離子植入被運用於半導體元件製造和金屬表 面處理，以及材料科學研究中的許多應用。 在無任何對策時，使用離子植入系统1〇ι的離子植入 期間’能量可以在帶電離子碰撞工件時以熱之形式增生於 工件118之上。此熱可能使工件118翹曲或破裂，而在一 些作業中產出毫無價值(或價值大幅降低)的工件。該熱可能 201250888 進步致使投送至工件1 1 8的離子劑量與預定的劑量相 異，而使得預定之機能產生改變。例如，若預定將—lxlon 原子數/立方公分的劑量植入位於工件118外部表面正下方 之一極薄區域，則意外的加熱可能致使投送之離子擴散到 該極薄區域之外，使得實際施用的劑量小於lxlon原子數/ 立方公分。實際上，該意外的加熱可能將植入之電荷"塗散,, 於一較預期大的區域之上，從而降低實際劑量而小於預定 的值。其亦可能產生其他的不良效果。 在一些情況中，其有需要在一低於周遭溫度的溫度下 植入離子，諸如需要允許工件丨18(例如，諸如矽晶圓之半 導體工件）表面的非晶化（amorphization)，使其能夠在高階 CMOS積體電路元件的生產中達成超&接面（uUra shaU〇w junction)結構。因此，其提供一冷卻系統124，其中該冷卻 系統被組構成用以冷卻或冷凍靜電夾頭12〇，從而使得位於 其上的工件118之溫度大幅低於周圍或第二環境126(例 如，亦稱為"外部環境|，或"大氣環境，,）之周遭溫度或大氣溫 度。 依據本揭示之另一特色，其更提供一晶圓承載室128， 與終端站106之第一環境122以及第二環境126選擇性地 流體通連，其中該晶圓承載室被組構成允許工件118之轉 移進入及離開真空系統100(例如，離子植入系統1〇1)而不 致犧牲真空系統内之真空品質（亦即第一環境）。 發明者領略到執行於冰凍溫度之下（例如，任何在第二 環境126之露點溫度以下之溫度）的離子植入，舉例而言， 201250888 ^自離子植Μ統m内的第—環境122轉移至外部環境 :比弟二環境的露點溫度更冷時，可能造成工件"8 上形成凝結。例如，若工 加(electrostatic clamp or chuck; ESC) to clamp X pieces or substrates. The clamping performance of the ESC, as well as the temperature control of the workpiece, has proven to be important for processing semiconductor substrates or wafer systems such as Shixi wafers. For example, a typical ESC includes a dielectric layer disposed on a conductive electrode, wherein the semiconductor wafer is placed on one surface of the ESC (e.g., the wafer is placed on one surface of the dielectric layer). During semiconductor processing (e.g., ion implantation), a clamping voltage is typically applied between the wafer and the electrode, wherein the wafer is clamped between the clamping faces of the chuck by electrostatic forces. For some ion implantation processes, it is necessary to cool the workpiece by cooling the ESC. However, 'at colder temperatures, condensation may form on the workpiece, or when the workpiece is transferred from the ice-cold ESC of process J (eg, vacuum) to the outside environment (eg, higher pressure, temperature, and fishing) At the time of the environment, the moisture in the atmosphere may even bead on the surface of the workpiece. For example, after the ion implantation of the workpiece, the workpiece is typically transferred into a load lock chamber and the wafer carrier chamber is then vented. When the wafer carrying chamber is opened to expose the large out-of-the-box from the beans, the 'the atmosphere of the workpiece passes through the threshold (for example, atmospheric pressure "open, and T from r / dish warm," tide County Zha) and the condensate may occur on the workpiece. The enchantment 7 , " accumulated in the workpiece of the β / condensation ... This condensation may cause particles to deposit on the workpiece, and / or left on the workpiece F only 7 is unloading. 丨 5 pieces (for example, for the action & field) residue. When the workpiece is condensed from a cold workpiece, there is a need for a cold environment in the related field. The invention is directed to mitigating systems, devices, and methods in a warmer environment. SUMMARY OF THE INVENTION The present invention overcomes the prior art by proposing a system, apparatus, and method for mitigating the condensation of workpieces in an ion implantation system. In view of the above, the following summary of the invention is provided to provide a basic understanding of the features of the invention. This summary is not an exhaustive description of the invention. Defining this issue The purpose of the present invention is to present some concepts of the present invention in a simplified form as a prelude to the subsequent detailed description. The present invention is basically directed to a system for avoiding condensation on a workpiece in an ion implantation system. Apparatus and method. The system includes a source for forming an ion beam, a beamHne assembly for mass analysis of the ion beam, and an end station An associated first environment, wherein the terminal station includes a frozen electrostatic chuck for clamping and cooling the workpiece and a wafer carrier chamber during implantation of ions from the ion beam, respectively, and the terminal station The second environment is selectively fluidly connected. The wafer carrying chamber comprises a platform for receiving 201250888 pieces, wherein the platform comprises a workpiece temperature monitoring device for measuring a temperature of two: and wherein the second environment is basic There is a dew point higher than the first brother. An auxiliary monitoring device is configured to measure a temperature and relative humidity in the =- environment, thereby measuring and/or leaf == And a controller is configured to determine that the condensation will not be formed on the workpiece when the workpiece is transferred from the wafer to the second environment, according to the temperature monitoring device and the auxiliary temperature monitoring data from the workpiece. The present invention is made, such as the dew point in the second environment. Accordingly, the foregoing disclosure of the present invention and the related objects are included in the present invention, including the features fully described below and particularly indicated in the scope of the claims. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENT(S) The specific exemplary embodiments of the present invention are described in detail. The present invention is directed to a number of ways in which the principles of the present invention can be utilized. The embodiments of the drawings are explained in detail, Advantages and novel features will become more apparent. [Embodiment] The present invention is basically directed to a seed implanter system (4): a collet to avoid condensation on the workpiece. The temperature or zone of the workpiece is not monitored; the traditional method of heating the workpiece at the waypoint may result in a lengthy exhaust time, which has a negative impact from ===, which will be described as - I = melon and the area outside the wafer carrier Dew point system: production: = method 'one information most... time to wait one: The present invention is described herein with reference to the drawings, in which like reference numerals are in It should be understood that the 201250888 descriptions of these features are merely illustrative and should not be construed as limiting. In the following description, numerous specific details are set forth in the <RTIgt; However, it will be apparent to those skilled in the relevant art that such specific details are not essential to the practice of the invention. According to one feature of the present disclosure, an exemplary vacuum system 100 is illustrated. The vacuum system 100 of the present example includes an ion implantation system, although it can also encompass many other types of vacuum systems, such as electropolymer processing systems. Or other semiconductor process systems. For example, the ion implantation system 101 includes a total terminal i 〇 2, a beam line assembly 丨〇 4, and an end station 1 〇 6. Typically, one of the ion sources of the total end 102 is depleted to a power source 110 to ionize a doping gas and form an ion beam. The ion beam 112. is directed through a beam steering device 114' and exits the terminal station ι6-perforation 116. In the terminal station 〇6, the ion beam 112 strikes a workpiece 11 8 (e.g., a semiconductor wafer, display panel, etc.), and the workpiece 1 18 is selectively clamped or fixed to the associated terminal. One of the stations - the environment in - the electrostatic chuck (ESC) 120. For example, the first environment 122 includes a vacuum created by the vacuum system 123. Once implanted into the crystal lattice of the workpiece (1), the implanted ions change the physical and/or chemical properties of the workpiece. Because of A, ion implantation has been used in many applications in semiconductor component fabrication and metal surface processing, as well as in materials science. In the absence of any countermeasures, during the ion implantation using the ion implantation system 1', energy can accumulate on the workpiece 118 in the form of heat as the charged ions collide with the workpiece. This heat may cause the workpiece 118 to warp or rupture, while in some operations it produces a workpiece that is worthless (or greatly reduced in value). This heat may cause the 201250888 advancement to cause the ion dose delivered to the workpiece 1 18 to be different from the predetermined dose, causing the predetermined function to change. For example, if a dose of -lxlon atoms per cubic centimeter is intended to be implanted in an extremely thin region directly below the outer surface of the workpiece 118, unexpected heating may cause the delivered ions to diffuse out of the extremely thin region, making the actual The dose applied is less than 1 x atomic number per cubic centimeter. In fact, this unexpected heating may spread the implanted charge " over a much larger area than expected, thereby reducing the actual dose to less than a predetermined value. It may also have other undesirable effects. In some cases, it may be desirable to implant ions at a temperature below ambient temperature, such as the need to allow for the amorphization of the surface of the workpiece 18 (e.g., a semiconductor workpiece such as a tantalum wafer), enabling it to A super & junction structure is achieved in the production of high order CMOS integrated circuit components. Accordingly, it provides a cooling system 124 that is configured to cool or freeze the electrostatic chuck 12A such that the temperature of the workpiece 118 located thereon is substantially lower than the surrounding or second environment 126 (eg, It is called the ambient temperature or atmospheric temperature of the "external environment|, or "atmospheric environment,,.) According to another feature of the present disclosure, a wafer carrier chamber 128 is further provided for selectively fluidly communicating with the first environment 122 and the second environment 126 of the terminal station 106, wherein the wafer carrier chamber is configured to allow the workpiece The transfer of 118 enters and exits the vacuum system 100 (e.g., ion implantation system 101) without sacrificing the vacuum quality (i.e., the first environment) within the vacuum system. The inventors appreciate ion implantation performed at freezing temperatures (e.g., any temperature below the dew point temperature of the second environment 126), for example, 201250888 ^Transfer from the first to the environment 122 within the ion implant system m To the external environment: When the temperature is colder than the dew point temperature of the second environment, condensation may form on the workpiece "8. For example, if you add
Ql 1千丨1 8之/JBL度低於水的結冰點， 則工件被暴露至第二環境 L . 26之周巧空軋中之周遭水氣（例 溼度）時可能起霧（例如，沉積凝結之水汽）。 一因=，晶圓承載室128被耦接至與終端站1〇6相連之 處理至130以維持真空系统1〇〇内的第一環境⑵（例 t 乾燥之真空?衷境)。晶圓承載室128内的晶圓承載室 環境132以及本實例中的第二環境126被稱為一”處於空氣 中（心叫之環境"，諸如當工件118在—工件運送容納器 1 34(例如，一 F〇UP(晶圓載抑模組））與晶圓承載室之間移轉 時，其中該處於空氣中之環境之設計係針對最小化擾動及 微粒的特定氣體/空氣流。 ▲例如，工件運送容納器U4通常係位於一個其露點可 能相當高的大氣之中（例如，前述之第二環境126)。舉例而 。多數處於空氣中之工件處置均將工件118暴露至大氣 環境。工件118經由一轉移機制135A自工件運送容納器134 移出，並通過第二環境126行進，而在其後經由晶圓承載 室之一第一閘門136被放入晶圓承載室128。晶圓承載室 128之第一閘門136選擇性地使晶圓承載室環境132與第二 環境126隔離。晶圓承載室128之一第二閘門138另外選 擇性地使晶圓承載室環境132與真空系統1〇〇之終端站ι3〇 内的第一環境122隔離。因此，當第—間門136係處於將 晶圓承載室環境132暴露至第二環境126之一開啟位置之 201250888 時’第二閘門1 3 8係處於一關閉位置，以使晶圓承載室環 境隔絕於第一環境122。 當工件11 8被置放於晶圓承載室128内之後，第一閘 門1 36被關閉而晶圆承載室環境丨32被柚吸成相當於處理 室130内之第一環境122之壓力，諸如由一真空源14〇提 供之一真空狀態。在晶圓承載室環境丨32與第一環境122 中之壓力基本上相等之後，第二閘門138被開啟，而工件 經由另一轉移機制135B被轉移進入處理室130以供後續處 理（例如，離子植入）。 處理完成之後’工件11 8被轉移回到晶圓承載室128。 晶圓承載室128之後被經由一氣體源142(亦稱為一排氣源） 進行排氣’使得晶圓承載室環境丨32内的壓力大致上被增 加至大氣>1力’或者第二環境126之壓力。氣體源i 42,舉 例而言’係與晶圓承載室丨28内的晶圓承載室環境1 32選 擇性地流體通連。在一實例之中，氣體源丨42提供乾燥氮 氣以將晶圓承載室環境132調整至大氣壓力，其中一旦處 於大氣Μ力之後’晶圓承載室丨28之第一閘門丨36即被開 啟以與第二環境126流體通連。在另一實例之中，氣體源 142包含氫氣、氦氣、氬氣、或其他惰性氣體中的一或多種。 例如，氣體源142被組構成提供氣體之一混合物，諸如包 含4%鼠氣及96%氛氣之’’混成氣體（f〇rming gas)”，其中提 供有氫氣之較高熱容量之優點以及氮氣的低費用，和不具 有易爆炸氣體濃度之安全性。此外，依據另一實例，其提 供一氣體源加熱器143以在進入晶圓承載室128加熱工件 10 201250888 m之前先對來自氣體源142之氣體或混合氣體加熱，此將 於以下說明。舉例而言，氣體源加熱$ 143被組構成將來 自氣體源142之氣體加熱至一諸如100-C到150-C之預定 溫度’其中工件118之充分加熱有所助益但未造成損傷(例 如，一個未在工件上造成光阻品質降低之溫度·.等）。 來自氣體源、142之熱氣體將比一較冷之氣體更快速地 加溫。晶圓的暫態溫度可以表示成以下的等式： T(t) = T.0 + (Γ0 -r«)exp(-/.i〇)/Γ ) ⑴ 式中：係表示為時間之函數的工件118之溫度、^係預 定之溫度、’“系初始溫度、，係時間、，“系開始時間、而r 係與工件之加熱相關之時間常數，其取決於幾何結構、材 料特性以及氣體流動速率。_ 3例示利用來自圖i氣體源 142之氣體將一工件由一_4(rc之初始晶圓溫度加溫至 °c的溫度相對於時間之一關係圖16〇，其中顯示一能量平 衡1 62以及指數曲線型態164。 依據本揭示之一實例，圖i之晶圓承載室128之第一 閘門136僅在卫件118之溫度高於第二環《⑶之露點時 被開啟至大氣。例如，其不需要工件118之溫度抵達第二 環境126之周遭溫度（例如，18γ_2(Γ(：)，而是工件之溫度 t高至第二環境（例如，周遭空氣）的區域露點以上。依據一 貫例’如更詳細例示於圖2之中纟，晶圓承載室128包含 平里144，用以接受工件118。例如，工件118靜置於平 $ 144之上。其進一步在晶圓承載室128之内提供一工件 溫度監測裝置146’其中該卫件溫度監測裝置被組構成用以 201250888 2：測工件1 1 8之一溫度。舉例而言，工件溫度監測裝置【 被整合入平臺144 ’諸如與該平臺之一表面148相連 電偶（thermocouple)。 例如，工件溫度監測裝置146可以被安置於平臺144 上的任何位置，使得工件丨丨8之一精確溫度可以被決定。 例如，工件度監測裝置丨46包含被壓製於工件1 1 8之背 側的一接觸式熱電偶^另一實例包含一接觸該工件之一邊 緣之熱電偶。其他可選替之工件溫度監測裝置丨46包含紅 外線（IR)里測裝置、雙色高溫計（2 c〇l〇r 、其他 電阻式熱元件或熱敏電阻（thermist〇r)、或其他適當的溫度 量測裝置。 舉例而言，其進一步提供一遮蔽區域15〇，使得工件溫 度監測裝置146在工件118駐留於平臺144之上時基本上 對來自氣體源142之加熱氣體有所屏蔽。此外，依據另一 實例，一加熱器152與平臺144相連，其中該加熱器被組 構成用以加熱工件11 8。 藉此，依據一示範性特色，其提供一外部監測裝置 154，如圖1所例示，其中該外部監測裝置被組構成用以監 測及/或量測第二環境126(例如，晶圓承載室128附近）之溫 度。舉例而言，外部監測裝置154被進一步組構成用以量 測晶圓承載室128附近處之第二環境126之一相對溼度 (RH)。發明者領略到外部監測裝置154與真空系統i⑼的 鄰近程度應該盡可能地接近工件118在晶圓承載室128與 工件運送容納器134之間的轉移處，因為流動路徑、 12 201250888 移動、外部建物氣候控制、區域氣象、季節、降雨、熱度... 等等，均可能導致溫度、壓力以及濕度上的變異。^而 言，氣體源142在晶圓承載室128之第—開門被開啟時將 f燥氣體引入第二環境126，因此，與一個距真空系統1〇〇 遇甚多的位置處相比，其露點可能較低，諸如操控該真空 系統之作業員站立處。 …因此’在處理處理室13G内的工件118(例如，透過冷 部系統m矛口 ESC 120冷卻工件）之後，該工件被置放於晶 圓承載室128中的平臺144之上。當晶圓承載冑128之第 二間門m被關閉之後，氣體源、142被組構成將氣體（例如， 經過加熱之氣體）流入工件118上，從而對工件加熱，同時 工件之溫度由工件溫度監測裝置146進行量測，而第二環 境=之露點（例如，溫度及相對渔度）則由外部監測褒置 54決疋。舉例而言’利用控制器156中之軟體邏輯，可 做出有關晶圓承載室128内之工件m之溫度是否位 核境126之露點或在其之上之判定。一旦工件"… &處於第二環境之露點或在其之上，則經由 ;： 將工件118移出晶圓承載室128。在 圓承載室之第一閘Π 136之 在開啟晶 小溫度範圍(例如，2至3戶 “奴時間或-個微 二環境⑶的露點《上）W確保整個工件118均處於第 因此，控制器156被袓 室⑶轉移至第二環,竟叫=決^工件被自晶圓承載 的一個工件丨18之溫戶，.工件之上將不形成凝結 X /、中其係根據來自工件溫度監測 13 201250888 裝置 彳外。P溫度監測裝置1 54之資料做出該決定。舉 幻而》#制$ 156被進—步組構成根據來自工件溫度監 測裝置14 6和外邱，田许g^·，B丨y本 P '狐度i測裝置1 5 4之資料，選擇性地自 乾燥氣體源142供應乾燥氣體。 八應主思、，其亦可涵蓋用以加熱晶圓承載室^ Μ内之 件11 8之選替性方法和設備，諸如利用加熱燈（^七 P) LED微波 '熱流體或用以加熱晶圓承載室内之 工件的任何方法或設備進行加熱。 依據本發明之另一不範性特色，圖4例示用以避免在 工件上發生凝結之-示範性方法跡其應注意，雖然示範 性方法於此處係以一連串動作或事件之形式加以例示及說 仁其應理解本發明並未受限於該等動作或事件所例示 之项序’ & 了依據本發明所述及所顯示於本文者之外，一 -步驟可以疋以不同的順序進行及/或與其他步驟並行式地 進行ifc夕卜’並非所有例示的步驟對於實施依據本發明之 方法均屬必要。並且’其應理解，該等方法可以是配合本 文例示及描述之系統實施，亦可以是配合未例示於此的其 他系統實施。 圖4之方法200開始於動作2〇2，其中一工件被冷卻於 一真空系統内之"'第-環境之中，諸如前述之i中之真 空系統100。在圖4的動作2〇4之中，該工件被自該第一環 境轉移至-晶圓承載室，且該晶圓承載室據以與該第一環 境隔離。在tM乍206之中，該工件被在該晶圓承載室之内 加熱’而在動# 208之中，纟量測該工件之一溫度。舉例 14 201250888 而π 、左過加熱之氣體流過工件。此外，在動作210之 中’其夏測一第二環境之一溫度與相對溼度，且此動作可 以與動作208並行進行。在動作212之中，其決定該第二 王衣丨兄之一露點’諸如藉由在動作2丨〇之中量測的溫度和相 對座度。在一個從〇。C到+6〇。c的溫度範圍以及一個從〇0/〇 到100 /。的^對溼度範圍之中，有效露點之一適當近似係： 237.7 ,797,r 〜，、nQl 1 丨18 / JBL is lower than the freezing point of water, the workpiece may be exposed to the surrounding environment (such as humidity) in the second environment L. 26 may fog (for example, deposition condensation Water vapor). As a result of the =, the wafer carrier chamber 128 is coupled to the process 130 connected to the terminal station 1 〇 6 to maintain the first environment (2) within the vacuum system 1 (Example t dry vacuum?). The wafer carrier environment 132 within the wafer carrier chamber 128 and the second environment 126 in this example are referred to as being "in the air" (such as when the workpiece 118 is in the workpiece transport container 1 34). (For example, a F〇UP (wafer-loading module)) and the wafer carrier chamber, where the environment in the air is designed to minimize the specific gas/air flow of the disturbance and particles. For example, the workpiece transport container U4 is typically located in an atmosphere where its dew point may be relatively high (e.g., the aforementioned second environment 126). For example, most workpiece handling in air exposes the workpiece 118 to the atmosphere. The workpiece 118 is removed from the workpiece transport container 134 via a transfer mechanism 135A and travels through the second environment 126 and thereafter into the wafer carrier chamber 128 via one of the first gates 136 of the wafer carrier. The first gate 136 of the chamber 128 selectively isolates the wafer carrier chamber environment 132 from the second environment 126. One of the wafer carrier chambers 128, the second gate 138, additionally selectively enables the wafer carrier chamber environment 132 and the vacuum system 1 The first environment 122 in the terminal station ι3 is isolated. Therefore, when the first door 136 is in the 201250888 when the wafer carrier environment 132 is exposed to one of the second environments 126, the second gate 1 3 The 8 Series is in a closed position to isolate the wafer carrier environment from the first environment 122. After the workpiece 11 is placed in the wafer carrier 128, the first gate 136 is closed and the wafer carrier environment is The crucible 32 is absorbed by the pomelo into a pressure corresponding to the first environment 122 in the processing chamber 130, such as by a vacuum source 14A. The pressure in the wafer carrier environment 32 and the first environment 122 is substantially After the equalization, the second gate 138 is opened and the workpiece is transferred into the processing chamber 130 via another transfer mechanism 135B for subsequent processing (eg, ion implantation). After the processing is completed, the workpiece 11 8 is transferred back to the wafer. The carrier chamber 128. The wafer carrier chamber 128 is then vented via a gas source 142 (also referred to as an exhaust source) such that the pressure within the wafer carrier chamber environment 丨32 is substantially increased to atmospheric > 'or second environment 126 Pressure gas source i 42, for example, is selectively in fluid communication with wafer carrier chamber environment 1 32 within wafer carrier chamber 28. In one example, gas source 42 provides dry nitrogen to The wafer carrier environment 132 is adjusted to atmospheric pressure, wherein once the atmospheric pressure is applied, the first gate 丨 36 of the wafer carrier chamber 28 is opened to fluidly interface with the second environment 126. In another example The gas source 142 comprises one or more of hydrogen, helium, argon, or other inert gases. For example, the gas source 142 is grouped to provide a mixture of one of the gases, such as containing 4% murine gas and 96% atmosphere. 'f〇rming gas', which provides the advantages of a higher heat capacity of hydrogen and a low cost of nitrogen, and a safety without an explosive gas concentration. Further, according to another example, a gas source heater 143 is provided to heat the gas or mixed gas from the gas source 142 prior to entering the wafer carrying chamber 128 to heat the workpiece 10 201250888 m, as will be explained below. For example, gas source heating $ 143 is grouped to heat the gas from gas source 142 to a predetermined temperature, such as 100-C to 150-C, where adequate heating of workpiece 118 is beneficial but does not cause damage (eg, , a temperature that does not cause a decrease in the quality of the photoresist on the workpiece, etc.). The hot gas from the gas source, 142, will warm up more quickly than a cooler gas. The transient temperature of the wafer can be expressed as the following equation: T(t) = T.0 + (Γ0 -r«)exp(-/.i〇)/Γ ) (1) where: is expressed as a function of time The temperature of the workpiece 118, the predetermined temperature, the "system initial temperature, the system time," the "system start time, and the time constant of the r system related to the heating of the workpiece, depending on the geometry, material properties, and gas. Flow rate. _ 3 illustrates the use of a gas from the gas source 142 of FIG. 1 to heat a workpiece from a _4 (the initial wafer temperature of rc is warmed to °c) versus time. FIG. 16A shows an energy balance 1 62 And an exponential curve pattern 164. According to one example of the present disclosure, the first gate 136 of the wafer carrier chamber 128 of FIG. i is opened to the atmosphere only when the temperature of the guard 118 is higher than the dew point of the second ring "(3). For example It does not require the temperature of the workpiece 118 to reach the ambient temperature of the second environment 126 (eg, 18 γ 2 (Γ (:), but the temperature t of the workpiece is higher than the dew point of the second environment (eg, ambient air). For example, as illustrated in more detail in FIG. 2, wafer carrier chamber 128 includes a flat 144 for receiving workpiece 118. For example, workpiece 118 is resting on top of flat 144. Further in wafer carrier chamber 128 A workpiece temperature monitoring device 146' is provided therein, wherein the guard temperature monitoring device is configured to be used to measure the temperature of the workpiece 1 18. For example, the workpiece temperature monitoring device is integrated into the platform 144' such as Surface 14 with one of the platforms 8 connected thermocouples. For example, the workpiece temperature monitoring device 146 can be placed anywhere on the platform 144 such that the precise temperature of one of the workpieces 8 can be determined. For example, the workpiece level monitoring device 46 contains a suppressed A contact thermocouple on the back side of the workpiece 1 18 includes another thermocouple that contacts one of the edges of the workpiece. Other alternative workpiece temperature monitoring devices 46 include an infrared (IR) metering device, Two-color pyrometer (2 c〇l〇r, other resistive thermal elements or thermistors), or other suitable temperature measuring device. For example, it further provides a shielding area 15〇 for the workpiece The temperature monitoring device 146 substantially shields the heated gas from the gas source 142 when the workpiece 118 resides above the platform 144. Further, according to another example, a heater 152 is coupled to the platform 144, wherein the heater is grouped It is configured to heat the workpiece 118. Thereby, according to an exemplary feature, an external monitoring device 154 is provided, as illustrated in Figure 1, wherein the external monitoring device is constructed Used to monitor and/or measure the temperature of the second environment 126 (eg, near the wafer carrier 128). For example, the external monitoring device 154 is further configured to measure the vicinity of the wafer carrier 128 The relative humidity (RH) of one of the environments 126. The inventors appreciate that the proximity of the external monitoring device 154 to the vacuum system i (9) should be as close as possible to the transfer of the workpiece 118 between the wafer carrier 128 and the workpiece transport container 134. Because of the flow path, 12 201250888 movement, external building climate control, regional weather, seasons, rainfall, heat, etc., may cause variations in temperature, pressure and humidity. In other words, the gas source 142 introduces the dry gas into the second environment 126 when the first opening of the wafer carrying chamber 128 is opened, and thus, compared with a position that is much more than the vacuum system 1 The dew point may be lower, such as where the operator handling the vacuum system is standing. Thus, after processing the workpiece 118 in the processing chamber 13G (e.g., cooling the workpiece through the cold system m spear ESC 120), the workpiece is placed over the platform 144 in the wafer carrying chamber 128. After the second gate m of the wafer carrier 128 is closed, the gas source 142 is configured to flow a gas (eg, a heated gas) into the workpiece 118 to heat the workpiece while the workpiece temperature is determined by the workpiece temperature. The monitoring device 146 performs the measurement while the second environment = dew point (eg, temperature and relative fish) is determined by the external monitoring device 54. For example, using software logic in controller 156, a determination can be made as to whether the temperature of workpiece m within wafer carrier chamber 128 is at or above the dew point of nuclear 126. Once the workpiece "...& is in or above the dew point of the second environment, the workpiece 118 is moved out of the wafer carrier chamber 128 via:; The first gate 136 of the circular carrying chamber is in the open crystal temperature range (for example, 2 to 3 households "slave time or - the dew point of the micro-two environment (3)") to ensure that the entire workpiece 118 is in the first, control The device 156 is transferred to the second ring by the chamber (3), and the workpiece is called a workpiece of the workpiece 丨18 carried by the wafer. The workpiece will not form a condensation X/, and the system is based on the temperature from the workpiece. Monitoring 13 201250888 The device is outside the device. The data of the P temperature monitoring device 1 54 makes the decision. The illusion is # 156 is entered into the step group according to the temperature monitoring device from the workpiece 14 6 and Wai Qiu, Tian Xu g ^ · B丨y The data of the P'foxi measuring device 1 5 4 selectively supplies dry gas from the dry gas source 142. Eight should be considered, and it can also cover the heating of the wafer carrying chamber ^ An alternative method and apparatus for internals, such as heating with a heating lamp (thermal heating fluid) or any method or apparatus for heating a workpiece in a wafer carrying chamber. An uncharacteristic feature, Figure 4 is illustrated to avoid condensation on the workpiece - It should be noted that the exemplary method is hereby illustrated in the form of a series of acts or events and that it should be understood that the present invention is not limited by the order of the acts or events. In addition to those described and illustrated herein, one-step steps may be performed in a different order and/or in parallel with other steps. 'Not all illustrated steps' are performed in accordance with the present invention. The method is necessary and it is understood that the methods may be implemented in conjunction with the systems illustrated and described herein, or may be implemented in conjunction with other systems not illustrated herein. The method 200 of Figure 4 begins with action 2〇2 One of the workpieces is cooled in a "'-environment within a vacuum system, such as the vacuum system 100 of the foregoing i. In the action 2〇4 of FIG. 4, the workpiece is taken from the first environment Transferring to the wafer carrier chamber, and the wafer carrier chamber is isolated from the first environment. In tM乍 206, the workpiece is heated within the wafer carrier chamber and is in motion #208 , measuring the workpiece One of the temperatures. Example 14 201250888 and π, the left overheated gas flows through the workpiece. Further, in action 210, 'the summer is measured as one of the second environment temperature and relative humidity, and this action can be performed in parallel with act 208. In act 212, it determines the dew point of one of the second king's brothers, such as the temperature and relative latitude measured by action 2, in a range from 〇 C to +6 〇. The temperature range of c and one of the range of humidity from 〇0/〇 to 100/, the appropriate approximation of one of the effective dew points: 237.7, 797, r 〜, n
TD 17.27 卜 (2) 237.7 +Τ' 100 式中.L係露點溫度、Γ係第二環境中以。C為單位之區域 溫度，而π//係以百分比為單位之相對溼度。 在動作214之中，其做出有關工件之溫度是否大於第 二環境之露點之判定，且若如此，則該工件在動作216被 從晶圓承載室轉移至該第二環境。如此這般之後，工件上 之凝結基本上得以避免。 其應注意，本發明並未受限於一冰凌靜電央頭，且其 可涵蓋主動露點量測配合其他低溫植入概念之使用，諸如 描述於共同擁有之序號2刚_44938之美國專利中請案中 的預冰康器㈣也㈣之方式，其内容以參照之形式納入 本說明書。此外，本發明並不必然需要圖2之溫度監測褒 置146係一嵌入平臺144之献萌^ ^田 πη 丁 $ ^^之熱電偶。因此，舉例而言，一 晶圓承載室溫度可以是在晶圓承載室128内的任何一處加 以監測。故晶圓承载室128中的^^ J仕何/m度監測，及/或在將 晶圓承載室開啟至處於空氣中之f •^衣i兄（例如，苐二環境126 或大氣）之前的工件118之任何溫度監測均視為落人本發明 15 201250888 的範疇之内。 本揭示因此提出以針對圖1 國1之離子植入系統1 0 1之生 產力之增加。藉由以經過加鼓之务挪+去 ‘、，、之氣體主動加熱工件118、量 測晶圓承載室1 2 8内之工件〗〗s +— 118之溫度，並主動量測該微 型％境（第二環境126)中之露點’ 』以違成工件生產量的理 論上的最大效率。因此’藉由吾 棺田里測晶圓溫度以及第二環境 126中之露點剛，推論出移出晶圓之—最早時點。 本發明提出一種用以控制工杜 制工件上之凝結之設備、系統 及方法。雖然本發明係藉由特定之較佳實施例或其他實施 例加以顯示及說明，但在審閱及了解本說明書及所附圖式 =後，其等效改造及修改對於相關領域之熟習者將係顯而 見的。特別是有關前述構件（組件、元件、電路、等等） 所執订之各種功能，除非特別敘明，否則用以描述該等组 件之用語（包含對-"裝£，，之參照）均包含執行所述組件特 定功能之任何構件（亦即，功能上等效者），即使在結構上不 全等於執行本文例示的本發明示範性實施例中之功能的揭 :結構亦然。此外’雖然本發明之某一特定特徵可能僅揭 :某實施例之但該特徵可以基於任何特定應用之 需要或效益而與其他實施例中之一或多個其他特徵相結 合。 【圖式簡單說明】 圖1例不依據本發明一實例之_包含一離子植入系統 之真空系統之示意圖。 圖2例示依據本發明另—特色之—示範性晶圓承載室。 16 201250888 圖3係例示依據另一實例之一以氣體加溫之工件之溫 度相對於時間之關係圖。 圖4係例示依據本發明另一示範性特色之一種用以避 免在工件上發生凝結之示範性方法。 【主要元件符號說明】 100 真空系統 101 離子植入系統 102 總端頭 104 射束線組件 106 終端站 108 離子源 110 電源 112 離子束 114 射束操控裝置 116 穿孔 118 工件 120 靜電炎頭（ESC) 122 第一環境 123 真空系統 124 冷卻系統 126 第二環境 128 晶圓承載室 130 處理室 132 晶圓承載室環境 17 201250888 134 工件運送容納 135A 轉移機制 135B 轉移機制 136 第一閘門 138 第二閘門 140 真空源 142 氣體源/排氣源 143 氣體源加熱器 144 平臺 146 工件溫度監測裝置 148 平臺表面 150 遮蔽區域 152 加熱器 154 外部監測裝置 156 控制器 162 能量平衡 164 指數曲線型態 200 方法 202-216 動作 18TD 17.27 卜 (2) 237.7 +Τ' 100 where the .L system dew point temperature, in the second environment of the lanthanide system. C is the area temperature of the unit, and π// is the relative humidity in percentage. In act 214, a determination is made as to whether the temperature of the workpiece is greater than the dew point of the second environment, and if so, the workpiece is transferred from the wafer carrier to the second environment at act 216. After doing this, the condensation on the workpiece is substantially avoided. It should be noted that the present invention is not limited to an ice static head, and it may encompass the use of active dew point measurements in conjunction with other low temperature implant concepts, such as those described in commonly owned Serial No. 2 _44938. In the case of the pre-ice device (4) and (4), the contents are included in the specification in the form of reference. In addition, the present invention does not necessarily require the temperature monitoring device 146 of FIG. 2 to be a thermocouple embedded in the platform 144. Thus, for example, a wafer carrier chamber temperature can be monitored at any location within the wafer carrier chamber 128. Therefore, the /m degree monitoring in the wafer carrying chamber 128, and / or before opening the wafer carrying chamber to the air in the air (for example, the second environment 126 or the atmosphere) Any temperature monitoring of the workpiece 118 is considered to fall within the scope of the present invention 15 201250888. The present disclosure therefore proposes an increase in the productivity of the ion implantation system 101 for Figure 1. The workpiece 118 is actively heated by the gas moving through the drum, and the temperature of the workpiece in the wafer carrying chamber 1 2 8 is measured, and the micro% is actively measured. Dew point ' in the environment (second environment 126) to violate the theoretical maximum efficiency of the workpiece production. Therefore, by measuring the wafer temperature in the field and the dew point in the second environment 126, the earliest time point of the removal of the wafer is inferred. SUMMARY OF THE INVENTION The present invention provides an apparatus, system and method for controlling condensation on a workpiece. Although the present invention has been shown and described with respect to the preferred embodiments or other embodiments, the equivalent modifications and modifications of the present invention and the accompanying drawings will be Obviously. In particular, the various functions defined by the aforementioned components (components, components, circuits, etc.), unless specifically stated otherwise, are used to describe the terms of the components (including references to -" Any component (i.e., functionally equivalent) that performs the specific functions of the described components, even if not structurally equivalent to performing the functions of the exemplary embodiments of the present invention as exemplified herein. Further, although a particular feature of the invention may only be disclosed in an embodiment, the feature may be combined with one or more other features in other embodiments based on the needs or benefits of any particular application. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a schematic view of a vacuum system including an ion implantation system, not according to an embodiment of the present invention. 2 illustrates an exemplary wafer carrier chamber in accordance with the present invention. 16 201250888 Figure 3 is a graph illustrating the temperature versus time of a workpiece heated by gas according to another example. Figure 4 illustrates an exemplary method for avoiding condensation on a workpiece in accordance with another exemplary feature of the present invention. [Main component symbol description] 100 Vacuum system 101 Ion implantation system 102 Total terminal 104 Beam line assembly 106 Terminal station 108 Ion source 110 Power supply 112 Ion beam 114 Beam steering device 116 Perforation 118 Workpiece 120 Electrostatic head (ESC) 122 First Environment 123 Vacuum System 124 Cooling System 126 Second Environment 128 Wafer Carrying Room 130 Processing Room 132 Wafer Carrying Room Environment 17 201250888 134 Workpiece Shipping Holder 135A Transfer Mechanism 135B Transfer Mechanism 136 First Gate 138 Second Gate 140 Vacuum Source 142 Gas Source/Exhaust Source 143 Gas Source Heater 144 Platform 146 Workpiece Temperature Monitoring Device 148 Platform Surface 150 Masking Area 152 Heater 154 External Monitoring Device 156 Controller 162 Energy Balance 164 Exponential Curve Pattern 200 Method 202-216 Action 18