KR102397854B1 - 안정화된 고온 증착을 위한 가스 냉각식 기판 지지부 - Google Patents

안정화된 고온 증착을 위한 가스 냉각식 기판 지지부 Download PDF

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KR102397854B1
KR102397854B1 KR1020217028046A KR20217028046A KR102397854B1 KR 102397854 B1 KR102397854 B1 KR 102397854B1 KR 1020217028046 A KR1020217028046 A KR 1020217028046A KR 20217028046 A KR20217028046 A KR 20217028046A KR 102397854 B1 KR102397854 B1 KR 102397854B1
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cooling
substrate
flow
temperature
processing
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KR20210110416A (ko
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브라이언 웨스트
미쉘 에스. 콕스
정훈 오
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어플라이드 머티어리얼스, 인코포레이티드
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    • H01L21/203—
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/541—Heating or cooling of the substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H01J37/32724—Temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Vapour Deposition (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Physical Vapour Deposition (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Drying Of Semiconductors (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
KR1020217028046A 2014-02-14 2015-01-13 안정화된 고온 증착을 위한 가스 냉각식 기판 지지부 Active KR102397854B1 (ko)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
US201461940215P 2014-02-14 2014-02-14
US61/940,215 2014-02-14
US201461943595P 2014-02-24 2014-02-24
US61/943,595 2014-02-24
KR1020167025401A KR102299392B1 (ko) 2014-02-14 2015-01-13 안정화된 고온 증착을 위한 가스 냉각식 기판 지지부
PCT/US2015/011203 WO2015122979A1 (en) 2014-02-14 2015-01-13 Gas cooled substrate support for stabilized high temperature deposition

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
KR1020167025401A Division KR102299392B1 (ko) 2014-02-14 2015-01-13 안정화된 고온 증착을 위한 가스 냉각식 기판 지지부

Publications (2)

Publication Number Publication Date
KR20210110416A KR20210110416A (ko) 2021-09-07
KR102397854B1 true KR102397854B1 (ko) 2022-05-12

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KR1020217028046A Active KR102397854B1 (ko) 2014-02-14 2015-01-13 안정화된 고온 증착을 위한 가스 냉각식 기판 지지부
KR1020167025401A Active KR102299392B1 (ko) 2014-02-14 2015-01-13 안정화된 고온 증착을 위한 가스 냉각식 기판 지지부

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Country Status (9)

Country Link
US (2) US9790589B2 (enExample)
EP (1) EP3105778B1 (enExample)
JP (1) JP6484642B2 (enExample)
KR (2) KR102397854B1 (enExample)
CN (1) CN105993062B (enExample)
IL (1) IL247032B (enExample)
SG (1) SG11201606361QA (enExample)
TW (1) TWI662596B (enExample)
WO (1) WO2015122979A1 (enExample)

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CN111850501B (zh) * 2020-07-20 2022-09-27 江苏集萃有机光电技术研究所有限公司 一种基片架结构及真空蒸镀装置
US11749542B2 (en) * 2020-07-27 2023-09-05 Applied Materials, Inc. Apparatus, system, and method for non-contact temperature monitoring of substrate supports
US11699571B2 (en) 2020-09-08 2023-07-11 Applied Materials, Inc. Semiconductor processing chambers for deposition and etch
US20220127723A1 (en) * 2020-10-23 2022-04-28 Applied Materials, Inc. High heat loss heater and electrostatic chuck for semiconductor processing
CN112663014A (zh) * 2021-01-05 2021-04-16 德润特数字影像科技（北京）有限公司 一种镀膜基板的均匀控温装置及方法
US11598006B2 (en) * 2021-01-08 2023-03-07 Sky Tech Inc. Wafer support and thin-film deposition apparatus using the same
KR20220101566A (ko) 2021-01-11 2022-07-19 에이에스엠 아이피 홀딩 비.브이. 정전기 척
CN114959620A (zh) * 2021-02-26 2022-08-30 鑫天虹(厦门)科技有限公司 薄膜沉积设备及其晶圆承载盘
US12091752B2 (en) * 2021-03-18 2024-09-17 Taiwan Semiconductor Manufacturing Company, Ltd. Apparatus and method of manufacturing interconnect structures
KR102685208B1 (ko) 2021-04-21 2024-07-16 주식회사 피브이티 마그네트론 스퍼터링 장치
KR20240023670A (ko) * 2021-07-02 2024-02-22 어플라이드 머티어리얼스, 인코포레이티드 고전력 rf 애플리케이션들을 위한 고온 서셉터
JP7317083B2 (ja) * 2021-09-01 2023-07-28 株式会社Kokusai Electric 半導体装置の製造方法、基板処理装置、プログラム及び基板処理方法
CN115305452B (zh) * 2022-07-06 2023-09-08 北京北方华创微电子装备有限公司 反应腔室
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US20070235134A1 (en) 2006-03-28 2007-10-11 Shunichi Iimuro Multi-zone substrate temperature control system and method of operating
US20100243437A1 (en) 2009-03-25 2010-09-30 Alliance For Sustainable Energy, Llc Research-scale, cadmium telluride (cdte) device development platform

Also Published As

Publication number Publication date
EP3105778A4 (en) 2017-11-01
US10344375B2 (en) 2019-07-09
US20180037987A1 (en) 2018-02-08
US20150232983A1 (en) 2015-08-20
JP6484642B2 (ja) 2019-03-13
CN105993062B (zh) 2020-08-11
EP3105778B1 (en) 2019-07-03
SG11201606361QA (en) 2016-09-29
JP2017512379A (ja) 2017-05-18
IL247032B (en) 2022-07-01
EP3105778A1 (en) 2016-12-21
TW201532126A (zh) 2015-08-16
KR102299392B1 (ko) 2021-09-06
KR20210110416A (ko) 2021-09-07
KR20160120339A (ko) 2016-10-17
TWI662596B (zh) 2019-06-11
WO2015122979A1 (en) 2015-08-20
CN105993062A (zh) 2016-10-05
IL247032A0 (en) 2016-09-29
US9790589B2 (en) 2017-10-17

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