JP2017168836A5 - - Google Patents
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- JP2017168836A5 JP2017168836A5 JP2017044532A JP2017044532A JP2017168836A5 JP 2017168836 A5 JP2017168836 A5 JP 2017168836A5 JP 2017044532 A JP2017044532 A JP 2017044532A JP 2017044532 A JP2017044532 A JP 2017044532A JP 2017168836 A5 JP2017168836 A5 JP 2017168836A5
- Authority
- JP
- Japan
- Prior art keywords
- region
- indium
- oxide semiconductor
- elemental
- composition
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 239000004065 semiconductor Substances 0.000 claims 14
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims 9
- 239000011701 zinc Substances 0.000 claims 8
- 239000000203 mixture Substances 0.000 claims 6
- 230000008878 coupling Effects 0.000 claims 4
- 238000010168 coupling process Methods 0.000 claims 4
- 238000005859 coupling reaction Methods 0.000 claims 4
- 239000013078 crystal Substances 0.000 claims 4
- 229910052738 indium Inorganic materials 0.000 claims 3
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims 2
- 239000002131 composite material Substances 0.000 claims 2
- 229910052725 zinc Inorganic materials 0.000 claims 2
- 229910052782 aluminium Inorganic materials 0.000 claims 1
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 229910052733 gallium Inorganic materials 0.000 claims 1
- 229910052727 yttrium Inorganic materials 0.000 claims 1
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2021181631A JP7258108B2 (ja) | 2016-03-11 | 2021-11-08 | 複合酸化物半導体 |
| JP2023060760A JP7505079B2 (ja) | 2016-03-11 | 2023-04-04 | トランジスタ |
| JP2024094973A JP7699697B2 (ja) | 2016-03-11 | 2024-06-12 | トランジスタ |
| JP2025101036A JP2025123395A (ja) | 2016-03-11 | 2025-06-17 | 酸化物半導体膜 |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2016048802 | 2016-03-11 | ||
| JP2016048802 | 2016-03-11 |
Related Child Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2019087070A Division JP6817366B2 (ja) | 2016-03-11 | 2019-04-30 | トランジスタ |
| JP2021181631A Division JP7258108B2 (ja) | 2016-03-11 | 2021-11-08 | 複合酸化物半導体 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2017168836A JP2017168836A (ja) | 2017-09-21 |
| JP2017168836A5 true JP2017168836A5 (enExample) | 2020-04-23 |
| JP6975541B2 JP6975541B2 (ja) | 2021-12-01 |
Family
ID=59787167
Family Applications (6)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2017044532A Active JP6975541B2 (ja) | 2016-03-11 | 2017-03-09 | 複合体、およびトランジスタ |
| JP2019087070A Active JP6817366B2 (ja) | 2016-03-11 | 2019-04-30 | トランジスタ |
| JP2021181631A Active JP7258108B2 (ja) | 2016-03-11 | 2021-11-08 | 複合酸化物半導体 |
| JP2023060760A Active JP7505079B2 (ja) | 2016-03-11 | 2023-04-04 | トランジスタ |
| JP2024094973A Active JP7699697B2 (ja) | 2016-03-11 | 2024-06-12 | トランジスタ |
| JP2025101036A Pending JP2025123395A (ja) | 2016-03-11 | 2025-06-17 | 酸化物半導体膜 |
Family Applications After (5)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2019087070A Active JP6817366B2 (ja) | 2016-03-11 | 2019-04-30 | トランジスタ |
| JP2021181631A Active JP7258108B2 (ja) | 2016-03-11 | 2021-11-08 | 複合酸化物半導体 |
| JP2023060760A Active JP7505079B2 (ja) | 2016-03-11 | 2023-04-04 | トランジスタ |
| JP2024094973A Active JP7699697B2 (ja) | 2016-03-11 | 2024-06-12 | トランジスタ |
| JP2025101036A Pending JP2025123395A (ja) | 2016-03-11 | 2025-06-17 | 酸化物半導体膜 |
Country Status (6)
| Country | Link |
|---|---|
| US (5) | US10516060B2 (enExample) |
| JP (6) | JP6975541B2 (enExample) |
| KR (4) | KR102513161B1 (enExample) |
| CN (2) | CN108780819B (enExample) |
| TW (3) | TW202418587A (enExample) |
| WO (1) | WO2017153862A1 (enExample) |
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| CN108780818B (zh) | 2016-03-04 | 2023-01-31 | 株式会社半导体能源研究所 | 半导体装置、该半导体装置的制造方法以及包括该半导体装置的显示装置 |
| US10516060B2 (en) | 2016-03-11 | 2019-12-24 | Semiconductor Energy Laboratory Co., Ltd. | Composite and transistor |
| US10388738B2 (en) | 2016-04-01 | 2019-08-20 | Semiconductor Energy Laboratory Co., Ltd. | Composite oxide semiconductor and method for manufacturing the same |
| JP6668455B2 (ja) | 2016-04-01 | 2020-03-18 | 株式会社半導体エネルギー研究所 | 酸化物半導体膜の作製方法 |
| WO2017212363A1 (en) | 2016-06-06 | 2017-12-14 | Semiconductor Energy Laboratory Co., Ltd. | Sputtering apparatus, sputtering target, and method for forming semiconductor film with the sputtering apparatus |
| KR102403389B1 (ko) | 2016-09-12 | 2022-06-03 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치 및 전자 기기 |
| US10224224B2 (en) | 2017-03-10 | 2019-03-05 | Micromaterials, LLC | High pressure wafer processing systems and related methods |
| JP6696046B2 (ja) | 2017-03-13 | 2020-05-20 | 株式会社半導体エネルギー研究所 | 複合酸化物およびトランジスタ |
| US10622214B2 (en) | 2017-05-25 | 2020-04-14 | Applied Materials, Inc. | Tungsten defluorination by high pressure treatment |
| US10388533B2 (en) | 2017-06-16 | 2019-08-20 | Applied Materials, Inc. | Process integration method to tune resistivity of nickel silicide |
| US10276411B2 (en) | 2017-08-18 | 2019-04-30 | Applied Materials, Inc. | High pressure and high temperature anneal chamber |
| WO2019036157A1 (en) | 2017-08-18 | 2019-02-21 | Applied Materials, Inc. | HIGH PRESSURE AND HIGH TEMPERATURE RECOVERY CHAMBER |
| KR102585074B1 (ko) | 2017-11-11 | 2023-10-04 | 마이크로머티어리얼즈 엘엘씨 | 고압 프로세싱 챔버를 위한 가스 전달 시스템 |
| KR20200075892A (ko) | 2017-11-17 | 2020-06-26 | 어플라이드 머티어리얼스, 인코포레이티드 | 고압 처리 시스템을 위한 컨덴서 시스템 |
| DE112018005782B4 (de) * | 2017-12-28 | 2024-02-22 | Ngk Insulators, Ltd. | Anordnung eines Substrats aus einem piezoelektrischen Material und eines Trägersubstrats |
| EP3762962A4 (en) | 2018-03-09 | 2021-12-08 | Applied Materials, Inc. | HIGH PRESSURE ANNEALING PROCESS FOR METAL-BASED MATERIALS |
| US10916433B2 (en) | 2018-04-06 | 2021-02-09 | Applied Materials, Inc. | Methods of forming metal silicide layers and metal silicide layers formed therefrom |
| US10950429B2 (en) | 2018-05-08 | 2021-03-16 | Applied Materials, Inc. | Methods of forming amorphous carbon hard mask layers and hard mask layers formed therefrom |
| US10748783B2 (en) | 2018-07-25 | 2020-08-18 | Applied Materials, Inc. | Gas delivery module |
| CN110875257B (zh) | 2018-09-03 | 2021-09-28 | 联华电子股份有限公司 | 射频装置以及其制作方法 |
| JP7355752B2 (ja) * | 2018-10-05 | 2023-10-03 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| WO2020117462A1 (en) | 2018-12-07 | 2020-06-11 | Applied Materials, Inc. | Semiconductor processing system |
| US11211461B2 (en) * | 2018-12-28 | 2021-12-28 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and memory device |
| JP7433250B2 (ja) * | 2019-01-29 | 2024-02-19 | 株式会社半導体エネルギー研究所 | 記憶装置 |
| WO2020222062A1 (ja) * | 2019-04-29 | 2020-11-05 | 株式会社半導体エネルギー研究所 | 半導体装置、および半導体装置の作製方法 |
| US11205589B2 (en) * | 2019-10-06 | 2021-12-21 | Applied Materials, Inc. | Methods and apparatuses for forming interconnection structures |
| JP7461129B2 (ja) * | 2019-10-17 | 2024-04-03 | 株式会社ジャパンディスプレイ | 半導体装置及び半導体装置の製造方法 |
| US12005391B2 (en) | 2019-12-11 | 2024-06-11 | Brookhaven Science Associates, Llc | Method for trapping noble gas atoms and molecules in oxide nanocages |
| US11901222B2 (en) | 2020-02-17 | 2024-02-13 | Applied Materials, Inc. | Multi-step process for flowable gap-fill film |
| CN115210873A (zh) * | 2020-03-05 | 2022-10-18 | 索尼半导体解决方案公司 | 固态成像装置和电子装置 |
| WO2022043825A1 (ja) * | 2020-08-27 | 2022-03-03 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| WO2024195631A1 (ja) * | 2023-03-17 | 2024-09-26 | 株式会社ジャパンディスプレイ | 酸化物半導体膜、積層構造体、薄膜トランジスタ、および電子機器 |
Family Cites Families (34)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5078246B2 (ja) | 2005-09-29 | 2012-11-21 | 株式会社半導体エネルギー研究所 | 半導体装置、及び半導体装置の作製方法 |
| KR101671210B1 (ko) * | 2009-03-06 | 2016-11-01 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 반도체 장치의 제작 방법 |
| KR101097322B1 (ko) | 2009-12-15 | 2011-12-23 | 삼성모바일디스플레이주식회사 | 산화물 반도체 박막 트랜지스터, 그 제조방법 및 산화물 반도체 박막 트랜지스터를 구비한 유기전계 발광소자 |
| JP6013676B2 (ja) | 2011-11-11 | 2016-10-25 | 株式会社半導体エネルギー研究所 | 半導体装置及び半導体装置の作製方法 |
| JP5856559B2 (ja) * | 2011-12-02 | 2016-02-10 | 株式会社神戸製鋼所 | 薄膜トランジスタの半導体層用酸化物薄膜の製造方法 |
| US9786793B2 (en) | 2012-03-29 | 2017-10-10 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device comprising oxide semiconductor layer including regions with different concentrations of resistance-reducing elements |
| JP5972065B2 (ja) * | 2012-06-20 | 2016-08-17 | 富士フイルム株式会社 | 薄膜トランジスタの製造方法 |
| US20130341180A1 (en) | 2012-06-22 | 2013-12-26 | Semiconductor Energy Laboratory Co., Ltd. | Sputtering target and method for using the same |
| KR102161077B1 (ko) | 2012-06-29 | 2020-09-29 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| IN2015DN01663A (enExample) * | 2012-08-03 | 2015-07-03 | Semiconductor Energy Lab | |
| TWI709244B (zh) * | 2012-09-24 | 2020-11-01 | 日商半導體能源研究所股份有限公司 | 半導體裝置 |
| WO2014061762A1 (en) * | 2012-10-17 | 2014-04-24 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
| WO2014065343A1 (en) | 2012-10-24 | 2014-05-01 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| TWI632123B (zh) | 2013-01-16 | 2018-08-11 | Idemitsu Kosan Co., Ltd. | 濺鍍靶、氧化物半導體薄膜及具備該氧化物半導體薄膜之薄膜電晶體 |
| JP2015188062A (ja) * | 2014-02-07 | 2015-10-29 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| CN104867981B (zh) | 2014-02-21 | 2020-04-21 | 株式会社半导体能源研究所 | 半导体膜、晶体管、半导体装置、显示装置以及电子设备 |
| US20150255029A1 (en) * | 2014-03-07 | 2015-09-10 | Semiconductor Energy Laboratory Co., Ltd. | Display device, display module including the display device, and electronic device including the display device or the display module |
| WO2015132697A1 (en) | 2014-03-07 | 2015-09-11 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| CN106132901A (zh) * | 2014-03-14 | 2016-11-16 | 住友金属矿山株式会社 | 氧化物烧结体、溅射用靶、以及用其得到的氧化物半导体薄膜 |
| KR20150126272A (ko) * | 2014-05-02 | 2015-11-11 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 산화물의 제작 방법 |
| US20150318171A1 (en) | 2014-05-02 | 2015-11-05 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing oxide |
| TWI695502B (zh) | 2014-05-09 | 2020-06-01 | 日商半導體能源研究所股份有限公司 | 半導體裝置 |
| TWI672804B (zh) * | 2014-05-23 | 2019-09-21 | Semiconductor Energy Laboratory Co., Ltd. | 半導體裝置的製造方法 |
| DE112014006711B4 (de) | 2014-05-30 | 2021-01-21 | Semiconductor Energy Laboratory Co., Ltd. | Halbleitervorrichtung, Herstellungsverfahren dafür und elektronische Vorrichtung |
| US9461179B2 (en) | 2014-07-11 | 2016-10-04 | Semiconductor Energy Laboratory Co., Ltd. | Thin film transistor device (TFT) comprising stacked oxide semiconductor layers and having a surrounded channel structure |
| US10684500B2 (en) | 2015-05-27 | 2020-06-16 | Semiconductor Energy Laboratory Co., Ltd. | Touch panel |
| US10139663B2 (en) | 2015-05-29 | 2018-11-27 | Semiconductor Energy Laboratory Co., Ltd. | Input/output device and electronic device |
| KR20160144314A (ko) | 2015-06-08 | 2016-12-16 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 촬상 장치 및 그 동작 방법, 및 전자 기기 |
| JP2017003976A (ja) | 2015-06-15 | 2017-01-05 | 株式会社半導体エネルギー研究所 | 表示装置 |
| KR102593883B1 (ko) | 2015-06-19 | 2023-10-24 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치, 그 제작 방법, 및 전자 기기 |
| US9860465B2 (en) | 2015-06-23 | 2018-01-02 | Semiconductor Energy Laboratory Co., Ltd. | Imaging device and electronic device |
| JP5968508B2 (ja) | 2015-07-17 | 2016-08-10 | 株式会社日立製作所 | 不揮発半導体記憶システム |
| US10516060B2 (en) * | 2016-03-11 | 2019-12-24 | Semiconductor Energy Laboratory Co., Ltd. | Composite and transistor |
| KR20180123028A (ko) | 2016-03-11 | 2018-11-14 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장비, 상기 반도체 장치의 제작 방법, 및 상기 반도체 장치를 포함하는 표시 장치 |
-
2017
- 2017-02-27 US US15/443,052 patent/US10516060B2/en active Active
- 2017-02-27 CN CN201780016678.0A patent/CN108780819B/zh active Active
- 2017-02-27 KR KR1020227003004A patent/KR102513161B1/ko active Active
- 2017-02-27 KR KR1020247035037A patent/KR102865888B1/ko active Active
- 2017-02-27 KR KR1020187026989A patent/KR102358289B1/ko active Active
- 2017-02-27 WO PCT/IB2017/051114 patent/WO2017153862A1/en not_active Ceased
- 2017-02-27 KR KR1020237009473A patent/KR102721654B1/ko active Active
- 2017-02-27 CN CN202210549677.5A patent/CN115148824B/zh active Active
- 2017-03-09 TW TW112150433A patent/TW202418587A/zh unknown
- 2017-03-09 TW TW113150910A patent/TWI886086B/zh active
- 2017-03-09 JP JP2017044532A patent/JP6975541B2/ja active Active
- 2017-03-09 TW TW106107851A patent/TWI829620B/zh active
-
2019
- 2019-04-30 JP JP2019087070A patent/JP6817366B2/ja active Active
- 2019-11-21 US US16/690,755 patent/US11417771B2/en active Active
-
2021
- 2021-11-08 JP JP2021181631A patent/JP7258108B2/ja active Active
-
2022
- 2022-08-10 US US17/884,717 patent/US11869980B2/en active Active
-
2023
- 2023-04-04 JP JP2023060760A patent/JP7505079B2/ja active Active
- 2023-12-15 US US18/540,987 patent/US12283633B2/en active Active
-
2024
- 2024-06-12 JP JP2024094973A patent/JP7699697B2/ja active Active
-
2025
- 2025-01-16 US US19/023,954 patent/US20250169114A1/en active Pending
- 2025-06-17 JP JP2025101036A patent/JP2025123395A/ja active Pending
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