CN108780819B - 复合体及晶体管 - Google Patents

复合体及晶体管 Download PDF

Info

Publication number
CN108780819B
CN108780819B CN201780016678.0A CN201780016678A CN108780819B CN 108780819 B CN108780819 B CN 108780819B CN 201780016678 A CN201780016678 A CN 201780016678A CN 108780819 B CN108780819 B CN 108780819B
Authority
CN
China
Prior art keywords
transistor
oxide
insulator
region
conductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201780016678.0A
Other languages
English (en)
Chinese (zh)
Other versions
CN108780819A (zh
Inventor
山崎舜平
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to CN202210549677.5A priority Critical patent/CN115148824B/zh
Publication of CN108780819A publication Critical patent/CN108780819A/zh
Application granted granted Critical
Publication of CN108780819B publication Critical patent/CN108780819B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/5226—Via connections in a multilevel interconnection structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/544—Marks applied to semiconductor devices or parts, e.g. registration marks, alignment structures, wafer maps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6733—Multi-gate TFTs
    • H10D30/6734—Multi-gate TFTs having gate electrodes arranged on both top and bottom sides of the channel, e.g. dual-gate TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/544—Marks applied to semiconductor devices or parts
    • H01L2223/54453—Marks applied to semiconductor devices or parts for use prior to dicing
    • H01L2223/5446—Located in scribe lines
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Thin Film Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Electroluminescent Light Sources (AREA)
  • Manufacturing & Machinery (AREA)
CN201780016678.0A 2016-03-11 2017-02-27 复合体及晶体管 Active CN108780819B (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202210549677.5A CN115148824B (zh) 2016-03-11 2017-02-27 复合体及晶体管

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2016-048802 2016-03-11
JP2016048802 2016-03-11
PCT/IB2017/051114 WO2017153862A1 (en) 2016-03-11 2017-02-27 Composite and transistor

Related Child Applications (1)

Application Number Title Priority Date Filing Date
CN202210549677.5A Division CN115148824B (zh) 2016-03-11 2017-02-27 复合体及晶体管

Publications (2)

Publication Number Publication Date
CN108780819A CN108780819A (zh) 2018-11-09
CN108780819B true CN108780819B (zh) 2022-06-14

Family

ID=59787167

Family Applications (2)

Application Number Title Priority Date Filing Date
CN201780016678.0A Active CN108780819B (zh) 2016-03-11 2017-02-27 复合体及晶体管
CN202210549677.5A Active CN115148824B (zh) 2016-03-11 2017-02-27 复合体及晶体管

Family Applications After (1)

Application Number Title Priority Date Filing Date
CN202210549677.5A Active CN115148824B (zh) 2016-03-11 2017-02-27 复合体及晶体管

Country Status (6)

Country Link
US (5) US10516060B2 (enExample)
JP (6) JP6975541B2 (enExample)
KR (4) KR102513161B1 (enExample)
CN (2) CN108780819B (enExample)
TW (3) TW202418587A (enExample)
WO (1) WO2017153862A1 (enExample)

Families Citing this family (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014027263A (ja) * 2012-06-15 2014-02-06 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
CN108780818B (zh) 2016-03-04 2023-01-31 株式会社半导体能源研究所 半导体装置、该半导体装置的制造方法以及包括该半导体装置的显示装置
US10516060B2 (en) 2016-03-11 2019-12-24 Semiconductor Energy Laboratory Co., Ltd. Composite and transistor
US10388738B2 (en) 2016-04-01 2019-08-20 Semiconductor Energy Laboratory Co., Ltd. Composite oxide semiconductor and method for manufacturing the same
JP6668455B2 (ja) 2016-04-01 2020-03-18 株式会社半導体エネルギー研究所 酸化物半導体膜の作製方法
WO2017212363A1 (en) 2016-06-06 2017-12-14 Semiconductor Energy Laboratory Co., Ltd. Sputtering apparatus, sputtering target, and method for forming semiconductor film with the sputtering apparatus
KR102403389B1 (ko) 2016-09-12 2022-06-03 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치 및 전자 기기
US10224224B2 (en) 2017-03-10 2019-03-05 Micromaterials, LLC High pressure wafer processing systems and related methods
JP6696046B2 (ja) 2017-03-13 2020-05-20 株式会社半導体エネルギー研究所 複合酸化物およびトランジスタ
US10622214B2 (en) 2017-05-25 2020-04-14 Applied Materials, Inc. Tungsten defluorination by high pressure treatment
US10388533B2 (en) 2017-06-16 2019-08-20 Applied Materials, Inc. Process integration method to tune resistivity of nickel silicide
US10276411B2 (en) 2017-08-18 2019-04-30 Applied Materials, Inc. High pressure and high temperature anneal chamber
WO2019036157A1 (en) 2017-08-18 2019-02-21 Applied Materials, Inc. HIGH PRESSURE AND HIGH TEMPERATURE RECOVERY CHAMBER
KR102585074B1 (ko) 2017-11-11 2023-10-04 마이크로머티어리얼즈 엘엘씨 고압 프로세싱 챔버를 위한 가스 전달 시스템
KR20200075892A (ko) 2017-11-17 2020-06-26 어플라이드 머티어리얼스, 인코포레이티드 고압 처리 시스템을 위한 컨덴서 시스템
DE112018005782B4 (de) * 2017-12-28 2024-02-22 Ngk Insulators, Ltd. Anordnung eines Substrats aus einem piezoelektrischen Material und eines Trägersubstrats
EP3762962A4 (en) 2018-03-09 2021-12-08 Applied Materials, Inc. HIGH PRESSURE ANNEALING PROCESS FOR METAL-BASED MATERIALS
US10916433B2 (en) 2018-04-06 2021-02-09 Applied Materials, Inc. Methods of forming metal silicide layers and metal silicide layers formed therefrom
US10950429B2 (en) 2018-05-08 2021-03-16 Applied Materials, Inc. Methods of forming amorphous carbon hard mask layers and hard mask layers formed therefrom
US10748783B2 (en) 2018-07-25 2020-08-18 Applied Materials, Inc. Gas delivery module
CN110875257B (zh) 2018-09-03 2021-09-28 联华电子股份有限公司 射频装置以及其制作方法
JP7355752B2 (ja) * 2018-10-05 2023-10-03 株式会社半導体エネルギー研究所 半導体装置の作製方法
WO2020117462A1 (en) 2018-12-07 2020-06-11 Applied Materials, Inc. Semiconductor processing system
US11211461B2 (en) * 2018-12-28 2021-12-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and memory device
JP7433250B2 (ja) * 2019-01-29 2024-02-19 株式会社半導体エネルギー研究所 記憶装置
WO2020222062A1 (ja) * 2019-04-29 2020-11-05 株式会社半導体エネルギー研究所 半導体装置、および半導体装置の作製方法
US11205589B2 (en) * 2019-10-06 2021-12-21 Applied Materials, Inc. Methods and apparatuses for forming interconnection structures
JP7461129B2 (ja) * 2019-10-17 2024-04-03 株式会社ジャパンディスプレイ 半導体装置及び半導体装置の製造方法
US12005391B2 (en) 2019-12-11 2024-06-11 Brookhaven Science Associates, Llc Method for trapping noble gas atoms and molecules in oxide nanocages
US11901222B2 (en) 2020-02-17 2024-02-13 Applied Materials, Inc. Multi-step process for flowable gap-fill film
CN115210873A (zh) * 2020-03-05 2022-10-18 索尼半导体解决方案公司 固态成像装置和电子装置
WO2022043825A1 (ja) * 2020-08-27 2022-03-03 株式会社半導体エネルギー研究所 半導体装置
WO2024195631A1 (ja) * 2023-03-17 2024-09-26 株式会社ジャパンディスプレイ 酸化物半導体膜、積層構造体、薄膜トランジスタ、および電子機器

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013191266A1 (en) * 2012-06-22 2013-12-27 Semiconductor Energy Laboratory Co., Ltd. Sputtering target and method for using the same
JP2014103388A (ja) * 2012-10-24 2014-06-05 Semiconductor Energy Lab Co Ltd 半導体装置
CN104867981A (zh) * 2014-02-21 2015-08-26 株式会社半导体能源研究所 半导体膜、晶体管、半导体装置、显示装置以及电子设备
JP2016006855A (ja) * 2014-05-30 2016-01-14 株式会社半導体エネルギー研究所 半導体装置とその作製方法、電子機器

Family Cites Families (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5078246B2 (ja) 2005-09-29 2012-11-21 株式会社半導体エネルギー研究所 半導体装置、及び半導体装置の作製方法
KR101671210B1 (ko) * 2009-03-06 2016-11-01 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제작 방법
KR101097322B1 (ko) 2009-12-15 2011-12-23 삼성모바일디스플레이주식회사 산화물 반도체 박막 트랜지스터, 그 제조방법 및 산화물 반도체 박막 트랜지스터를 구비한 유기전계 발광소자
JP6013676B2 (ja) 2011-11-11 2016-10-25 株式会社半導体エネルギー研究所 半導体装置及び半導体装置の作製方法
JP5856559B2 (ja) * 2011-12-02 2016-02-10 株式会社神戸製鋼所 薄膜トランジスタの半導体層用酸化物薄膜の製造方法
US9786793B2 (en) 2012-03-29 2017-10-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising oxide semiconductor layer including regions with different concentrations of resistance-reducing elements
JP5972065B2 (ja) * 2012-06-20 2016-08-17 富士フイルム株式会社 薄膜トランジスタの製造方法
KR102161077B1 (ko) 2012-06-29 2020-09-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
IN2015DN01663A (enExample) * 2012-08-03 2015-07-03 Semiconductor Energy Lab
TWI709244B (zh) * 2012-09-24 2020-11-01 日商半導體能源研究所股份有限公司 半導體裝置
WO2014061762A1 (en) * 2012-10-17 2014-04-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
TWI632123B (zh) 2013-01-16 2018-08-11 Idemitsu Kosan Co., Ltd. 濺鍍靶、氧化物半導體薄膜及具備該氧化物半導體薄膜之薄膜電晶體
JP2015188062A (ja) * 2014-02-07 2015-10-29 株式会社半導体エネルギー研究所 半導体装置
US20150255029A1 (en) * 2014-03-07 2015-09-10 Semiconductor Energy Laboratory Co., Ltd. Display device, display module including the display device, and electronic device including the display device or the display module
WO2015132697A1 (en) 2014-03-07 2015-09-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
CN106132901A (zh) * 2014-03-14 2016-11-16 住友金属矿山株式会社 氧化物烧结体、溅射用靶、以及用其得到的氧化物半导体薄膜
KR20150126272A (ko) * 2014-05-02 2015-11-11 가부시키가이샤 한도오따이 에네루기 켄큐쇼 산화물의 제작 방법
US20150318171A1 (en) 2014-05-02 2015-11-05 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing oxide
TWI695502B (zh) 2014-05-09 2020-06-01 日商半導體能源研究所股份有限公司 半導體裝置
TWI672804B (zh) * 2014-05-23 2019-09-21 Semiconductor Energy Laboratory Co., Ltd. 半導體裝置的製造方法
US9461179B2 (en) 2014-07-11 2016-10-04 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor device (TFT) comprising stacked oxide semiconductor layers and having a surrounded channel structure
US10684500B2 (en) 2015-05-27 2020-06-16 Semiconductor Energy Laboratory Co., Ltd. Touch panel
US10139663B2 (en) 2015-05-29 2018-11-27 Semiconductor Energy Laboratory Co., Ltd. Input/output device and electronic device
KR20160144314A (ko) 2015-06-08 2016-12-16 가부시키가이샤 한도오따이 에네루기 켄큐쇼 촬상 장치 및 그 동작 방법, 및 전자 기기
JP2017003976A (ja) 2015-06-15 2017-01-05 株式会社半導体エネルギー研究所 表示装置
KR102593883B1 (ko) 2015-06-19 2023-10-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치, 그 제작 방법, 및 전자 기기
US9860465B2 (en) 2015-06-23 2018-01-02 Semiconductor Energy Laboratory Co., Ltd. Imaging device and electronic device
JP5968508B2 (ja) 2015-07-17 2016-08-10 株式会社日立製作所 不揮発半導体記憶システム
US10516060B2 (en) * 2016-03-11 2019-12-24 Semiconductor Energy Laboratory Co., Ltd. Composite and transistor
KR20180123028A (ko) 2016-03-11 2018-11-14 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장비, 상기 반도체 장치의 제작 방법, 및 상기 반도체 장치를 포함하는 표시 장치

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013191266A1 (en) * 2012-06-22 2013-12-27 Semiconductor Energy Laboratory Co., Ltd. Sputtering target and method for using the same
JP2014103388A (ja) * 2012-10-24 2014-06-05 Semiconductor Energy Lab Co Ltd 半導体装置
CN104867981A (zh) * 2014-02-21 2015-08-26 株式会社半导体能源研究所 半导体膜、晶体管、半导体装置、显示装置以及电子设备
JP2016006855A (ja) * 2014-05-30 2016-01-14 株式会社半導体エネルギー研究所 半導体装置とその作製方法、電子機器

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
Se Jun Kang 等.Surface-chemistry-sensitive spectral features of In-Ga-Zn-O thin film: Cleaned, air-passivated, and sputter-phase-separated surfaces.《Chemical Physics Letters》.2011,第510卷 *
Surface-chemistry-sensitive spectral features of In-Ga-Zn-O thin film: Cleaned, air-passivated, and sputter-phase-separated surfaces;Se Jun Kang 等;《Chemical Physics Letters》;20110715;第510卷;第234-236页第1-4节以及图1-2 *

Also Published As

Publication number Publication date
JP2023080161A (ja) 2023-06-08
KR102721654B1 (ko) 2024-10-23
KR20180123501A (ko) 2018-11-16
CN108780819A (zh) 2018-11-09
US20240113231A1 (en) 2024-04-04
JP2017168836A (ja) 2017-09-21
JP7699697B2 (ja) 2025-06-27
US10516060B2 (en) 2019-12-24
JP2024107358A (ja) 2024-08-08
US20250169114A1 (en) 2025-05-22
KR20230043237A (ko) 2023-03-30
US20170263773A1 (en) 2017-09-14
JP6975541B2 (ja) 2021-12-01
TW202418587A (zh) 2024-05-01
WO2017153862A1 (en) 2017-09-14
TWI886086B (zh) 2025-06-01
KR102358289B1 (ko) 2022-02-03
JP2025123395A (ja) 2025-08-22
CN115148824A (zh) 2022-10-04
US11869980B2 (en) 2024-01-09
JP2019149568A (ja) 2019-09-05
JP7505079B2 (ja) 2024-06-24
JP7258108B2 (ja) 2023-04-14
KR102865888B1 (ko) 2025-09-26
US20230033787A1 (en) 2023-02-02
US11417771B2 (en) 2022-08-16
KR20220017533A (ko) 2022-02-11
US20200091346A1 (en) 2020-03-19
KR20240156430A (ko) 2024-10-29
JP6817366B2 (ja) 2021-01-20
TW201739049A (zh) 2017-11-01
KR102513161B1 (ko) 2023-03-22
TW202517055A (zh) 2025-04-16
CN115148824B (zh) 2025-10-03
TWI829620B (zh) 2024-01-21
JP2022010133A (ja) 2022-01-14
US12283633B2 (en) 2025-04-22

Similar Documents

Publication Publication Date Title
JP7699697B2 (ja) トランジスタ
CN108886021B (zh) 半导体装置及其制造方法
JP6904907B2 (ja) 酸化物及び半導体装置の作製方法
JP2021048397A (ja) 金属酸化物膜及びトランジスタ

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant