JP2017034245A5 - - Google Patents
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- Publication number
- JP2017034245A5 JP2017034245A5 JP2016146849A JP2016146849A JP2017034245A5 JP 2017034245 A5 JP2017034245 A5 JP 2017034245A5 JP 2016146849 A JP2016146849 A JP 2016146849A JP 2016146849 A JP2016146849 A JP 2016146849A JP 2017034245 A5 JP2017034245 A5 JP 2017034245A5
- Authority
- JP
- Japan
- Prior art keywords
- layer
- double barrier
- barrier layer
- sub
- halide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000004888 barrier function Effects 0.000 claims description 41
- 238000000034 method Methods 0.000 claims description 38
- 150000004820 halides Chemical class 0.000 claims description 26
- 239000000463 material Substances 0.000 claims description 23
- 238000000151 deposition Methods 0.000 claims description 20
- 239000000758 substrate Substances 0.000 claims description 12
- 239000000126 substance Substances 0.000 claims description 7
- 238000000231 atomic layer deposition Methods 0.000 claims description 4
- 238000005229 chemical vapour deposition Methods 0.000 claims description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 3
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- 229910052799 carbon Inorganic materials 0.000 claims description 3
- 230000008021 deposition Effects 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- 238000005530 etching Methods 0.000 claims description 2
- 238000006243 chemical reaction Methods 0.000 claims 7
- 229920000052 poly(p-xylylene) Polymers 0.000 claims 3
- 239000005046 Chlorosilane Substances 0.000 claims 2
- 150000004770 chalcogenides Chemical class 0.000 claims 2
- KOPOQZFJUQMUML-UHFFFAOYSA-N chlorosilane Chemical compound Cl[SiH3] KOPOQZFJUQMUML-UHFFFAOYSA-N 0.000 claims 2
- 238000005137 deposition process Methods 0.000 claims 2
- 238000007740 vapor deposition Methods 0.000 claims 2
- 229910003481 amorphous carbon Inorganic materials 0.000 claims 1
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical group Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 claims 1
- 238000006116 polymerization reaction Methods 0.000 claims 1
- 238000002360 preparation method Methods 0.000 claims 1
- 238000000197 pyrolysis Methods 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 claims 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US14/811,205 US9385318B1 (en) | 2015-07-28 | 2015-07-28 | Method to integrate a halide-containing ALD film on sensitive materials |
| US14/811,205 | 2015-07-28 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2017034245A JP2017034245A (ja) | 2017-02-09 |
| JP2017034245A5 true JP2017034245A5 (enExample) | 2019-08-29 |
| JP6832088B2 JP6832088B2 (ja) | 2021-02-24 |
Family
ID=56235011
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2016146849A Active JP6832088B2 (ja) | 2015-07-28 | 2016-07-27 | 感受性材料上にハロゲン化物含有ａｌｄ膜を統合する方法 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US9385318B1 (enExample) |
| JP (1) | JP6832088B2 (enExample) |
| KR (1) | KR102621967B1 (enExample) |
| TW (1) | TWI720001B (enExample) |
Families Citing this family (31)
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| US10297459B2 (en) | 2013-09-20 | 2019-05-21 | Lam Research Corporation | Technique to deposit sidewall passivation for high aspect ratio cylinder etch |
| US9887097B2 (en) | 2014-12-04 | 2018-02-06 | Lam Research Corporation | Technique to deposit sidewall passivation for high aspect ratio cylinder etch |
| US9620377B2 (en) | 2014-12-04 | 2017-04-11 | Lab Research Corporation | Technique to deposit metal-containing sidewall passivation for high aspect ratio cylinder etch |
| US10170324B2 (en) | 2014-12-04 | 2019-01-01 | Lam Research Corporation | Technique to tune sidewall passivation deposition conformality for high aspect ratio cylinder etch |
| US9384998B2 (en) * | 2014-12-04 | 2016-07-05 | Lam Research Corporation | Technique to deposit sidewall passivation for high aspect ratio cylinder etch |
| US9543148B1 (en) | 2015-09-01 | 2017-01-10 | Lam Research Corporation | Mask shrink layer for high aspect ratio dielectric etch |
| US10157736B2 (en) | 2016-05-06 | 2018-12-18 | Lam Research Corporation | Methods of encapsulation |
| US9929006B2 (en) | 2016-07-20 | 2018-03-27 | Micron Technology, Inc. | Silicon chalcogenate precursors, methods of forming the silicon chalcogenate precursors, and related methods of forming silicon nitride and semiconductor structures |
| US9865456B1 (en) | 2016-08-12 | 2018-01-09 | Micron Technology, Inc. | Methods of forming silicon nitride by atomic layer deposition and methods of forming semiconductor structures |
| US10669627B2 (en) | 2016-08-30 | 2020-06-02 | Hzo, Inc. | Multi-layer deposition system and process |
| US10224414B2 (en) * | 2016-12-16 | 2019-03-05 | Lam Research Corporation | Method for providing a low-k spacer |
| KR102659567B1 (ko) * | 2017-03-03 | 2024-04-19 | 램 리써치 코포레이션 | 고종횡비 실린더 에칭을 위해 측벽 패시베이션 증착 컨포멀성을 튜닝하는 기법 |
| US10276398B2 (en) | 2017-08-02 | 2019-04-30 | Lam Research Corporation | High aspect ratio selective lateral etch using cyclic passivation and etching |
| US11164745B2 (en) * | 2017-08-13 | 2021-11-02 | Applied Materials, Inc. | Method of enhancing selective deposition by cross-linking of blocking molecules |
| WO2019060069A1 (en) * | 2017-09-21 | 2019-03-28 | Applied Materials, Inc. | High aspect ratio deposition |
| US10141503B1 (en) | 2017-11-03 | 2018-11-27 | International Business Machines Corporation | Selective phase change material growth in high aspect ratio dielectric pores for semiconductor device fabrication |
| US10658174B2 (en) | 2017-11-21 | 2020-05-19 | Lam Research Corporation | Atomic layer deposition and etch for reducing roughness |
| TWI790327B (zh) * | 2017-12-08 | 2023-01-21 | 日商東京威力科創股份有限公司 | 使用原子層沉積保護層的高深寬比介層窗蝕刻 |
| US10903109B2 (en) | 2017-12-29 | 2021-01-26 | Micron Technology, Inc. | Methods of forming high aspect ratio openings and methods of forming high aspect ratio features |
| CN112514051A (zh) * | 2018-07-27 | 2021-03-16 | 应用材料公司 | 3d nand蚀刻 |
| KR102620168B1 (ko) | 2018-08-22 | 2024-01-02 | 삼성전자주식회사 | 가변 저항 메모리 장치 및 그 제조 방법 |
| US11239420B2 (en) | 2018-08-24 | 2022-02-01 | Lam Research Corporation | Conformal damage-free encapsulation of chalcogenide materials |
| US20200381623A1 (en) * | 2019-05-31 | 2020-12-03 | Applied Materials, Inc. | Methods of forming silicon nitride encapsulation layers |
| TWI853988B (zh) * | 2019-07-29 | 2024-09-01 | 美商應用材料股份有限公司 | 原子層沉積之多層封裝堆疊 |
| KR102763600B1 (ko) | 2019-10-07 | 2025-02-10 | 삼성전자주식회사 | 가변 저항 메모리 소자 |
| US11417840B2 (en) * | 2019-12-31 | 2022-08-16 | Micron Technology, Inc. | Protective sealant for chalcogenide material and methods for forming the same |
| US11424118B2 (en) | 2020-01-23 | 2022-08-23 | Micron Technology, Inc. | Electronic devices comprising silicon carbide materials |
| CN111584411A (zh) * | 2020-06-11 | 2020-08-25 | 中国科学院微电子研究所 | 半导体加工设备、沉积钝化层方法及pram制作方法 |
| US11361971B2 (en) | 2020-09-25 | 2022-06-14 | Taiwan Semiconductor Manufacturing Company, Ltd. | High aspect ratio Bosch deep etch |
| TW202348830A (zh) * | 2022-02-22 | 2023-12-16 | 美商蘭姆研究公司 | 熱膜沉積 |
| WO2025034500A1 (en) * | 2023-08-07 | 2025-02-13 | Lam Research Corporation | Atomic layer etching using passivation and directional plasma |
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| JPS60198731A (ja) * | 1984-03-22 | 1985-10-08 | Nec Corp | 半導体装置 |
| JPH10173047A (ja) * | 1996-12-11 | 1998-06-26 | Mitsubishi Electric Corp | 半導体装置及びその製造方法 |
| JP3148183B2 (ja) * | 1998-08-31 | 2001-03-19 | 日本電気株式会社 | 半導体装置の製造方法 |
| JP2000106396A (ja) * | 1998-09-29 | 2000-04-11 | Sharp Corp | 半導体装置の製造方法 |
| WO2003025243A2 (en) * | 2001-09-14 | 2003-03-27 | Asm International N.V. | Metal nitride deposition by ald using gettering reactant |
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| JP4879159B2 (ja) * | 2004-03-05 | 2012-02-22 | アプライド マテリアルズ インコーポレイテッド | アモルファス炭素膜堆積のためのｃｖｄプロセス |
| US7282438B1 (en) | 2004-06-15 | 2007-10-16 | Novellus Systems, Inc. | Low-k SiC copper diffusion barrier films |
| US7785658B2 (en) * | 2005-10-07 | 2010-08-31 | Asm Japan K.K. | Method for forming metal wiring structure |
| US7892620B2 (en) * | 2005-11-30 | 2011-02-22 | Panasonic Corporation | Information recording medium and method for manufacturing thereof |
| US7767589B2 (en) * | 2007-02-07 | 2010-08-03 | Raytheon Company | Passivation layer for a circuit device and method of manufacture |
| US8298628B2 (en) | 2008-06-02 | 2012-10-30 | Air Products And Chemicals, Inc. | Low temperature deposition of silicon-containing films |
| US7820556B2 (en) | 2008-06-04 | 2010-10-26 | Novellus Systems, Inc. | Method for purifying acetylene gas for use in semiconductor processes |
| US7955990B2 (en) | 2008-12-12 | 2011-06-07 | Novellus Systems, Inc. | Method for improved thickness repeatability of PECVD deposited carbon films |
| KR20100082604A (ko) * | 2009-01-09 | 2010-07-19 | 삼성전자주식회사 | 가변저항 메모리 장치 및 그의 형성 방법 |
| US8268722B2 (en) * | 2009-06-03 | 2012-09-18 | Novellus Systems, Inc. | Interfacial capping layers for interconnects |
| US8728956B2 (en) | 2010-04-15 | 2014-05-20 | Novellus Systems, Inc. | Plasma activated conformal film deposition |
| US9287113B2 (en) * | 2012-11-08 | 2016-03-15 | Novellus Systems, Inc. | Methods for depositing films on sensitive substrates |
| JP5664661B2 (ja) * | 2010-11-26 | 2015-02-04 | 富士通株式会社 | 半導体装置及び半導体装置の製造方法 |
| JP2012178422A (ja) * | 2011-02-25 | 2012-09-13 | Fujikura Ltd | 半導体装置の製造方法及び半導体装置の製造装置並びに基板保持治具 |
| US8772158B2 (en) * | 2012-07-20 | 2014-07-08 | Globalfoundries Inc. | Multi-layer barrier layer stacks for interconnect structures |
| US9449809B2 (en) * | 2012-07-20 | 2016-09-20 | Applied Materials, Inc. | Interface adhesion improvement method |
| KR102038647B1 (ko) * | 2013-06-21 | 2019-10-30 | 주식회사 원익아이피에스 | 기판 지지 장치 및 이를 구비하는 기판 처리 장치 |
| US9320387B2 (en) | 2013-09-30 | 2016-04-26 | Lam Research Corporation | Sulfur doped carbon hard masks |
| US9589799B2 (en) | 2013-09-30 | 2017-03-07 | Lam Research Corporation | High selectivity and low stress carbon hardmask by pulsed low frequency RF power |
| US10249819B2 (en) * | 2014-04-03 | 2019-04-02 | Micron Technology, Inc. | Methods of forming semiconductor structures including multi-portion liners |
-
2015
- 2015-07-28 US US14/811,205 patent/US9385318B1/en active Active
-
2016
- 2016-07-26 TW TW105123513A patent/TWI720001B/zh active
- 2016-07-26 KR KR1020160094884A patent/KR102621967B1/ko active Active
- 2016-07-27 JP JP2016146849A patent/JP6832088B2/ja active Active
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