JP2016533025A - ウエハの裏側及び表側からのウエハダイシング - Google Patents
ウエハの裏側及び表側からのウエハダイシング Download PDFInfo
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Abstract
Description
本出願は、本明細書で参照されることによって、その内容の全体が本明細書に組み込まれる、2013年9月19日に出願された米国仮特許出願番号61/879,787の利益を主張する。
Claims (15)
- 表側の複数の集積回路及び裏側のメタライゼーションを備えた半導体ウエハのダイシング方法であって、前記方法が、
第1のレーザースクライビング処理によって、前記裏側の前記メタライゼーションをパターニングし、前記裏側に第1の複数のレーザースクライブラインを提供すること、
前記表側にマスクを形成すること、
第2のレーザースクライビング処理によって、前記表側から、前記マスクをパターニングし、前記集積回路の間に前記半導体ウエハの領域を露出させる第2の複数のスクライブラインを、パターニングされたマスクに提供することであって、前記第2の複数のスクライブラインが、前記第1の複数のスクライブラインと位置合わせされる、パターニングされたマスクに提供すること、及び
前記第2の複数のスクライブラインを通って、前記半導体ウエハをプラズマエッチングし、前記集積回路を個片化することを含む、方法。 - 前記第1のレーザースクライビング処理の間に、前記半導体ウエハの前記裏側にダイマーキングすることを更に含む、請求項1に記載の方法。
- 前記第1及び第2のレーザースクライビング処理が、同じレーザー条件を使用することを含む、請求項1に記載の方法。
- 前記第1及び第2のレーザースクライビング処理が、フェムト秒ベースのレーザーを用いることを含む、請求項1に記載の方法。
- 前記第1の複数のスクライブラインが、前記半導体ウエハの前記裏側の中へ部分的に形成されたトレンチを含む、請求項1に記載の方法。
- 前記第2の複数のスクライブラインが、前記半導体ウエハの前記表側の中へ部分的に形成されたトレンチを含む、請求項1に記載の方法。
- 前記表側に前記マスクを形成することが、水溶性マスクを形成することを含む、請求項1に記載の方法。
- 前記表側に前記マスクを形成することが、UV硬化性マスクを形成することを含む、請求項1に記載の方法。
- 前記半導体ウエハが、単結晶シリコン基板である、請求項1に記載の方法。
- 表側の複数の集積回路及び裏側のメタライゼーションを備えた半導体ウエハのダイシング方法であって、前記方法が、
前記半導体ウエハの前記表側にマスクを形成することであって、前記メタライゼーション及び前記半導体ウエハの前記裏側が、内部に第1の複数のスクライブラインを有する、マスクを形成すること、
レーザースクライビング処理によって、前記表側から、前記マスクをパターニングし、前記集積回路の間に前記半導体ウエハの領域を露出させる第2の複数のスクライブラインを、パターニングされたマスクに提供することであって、前記第2の複数のスクライブラインが、前記第1の複数のスクライブラインと位置合わせされる、パターニングされたマスクに提供すること、並びに
前記第2の複数のスクライブラインを通って、前記半導体ウエハをプラズマエッチングし、前記集積回路を個片化することを含む、方法。 - 前記レーザースクライビング処理が、フェムト秒ベースのレーザーを用いることを含む、請求項10に記載の方法。
- 前記第1の複数のスクライブラインが、前記半導体ウエハの前記裏側の中へ部分的に形成されたトレンチを含む、請求項10に記載の方法。
- 前記第2の複数のスクライブラインが、前記半導体ウエハの前記表側の中へ部分的に形成されたトレンチを含む、請求項10に記載の方法。
- 前記表側に前記マスクを形成することが、水溶性マスクを形成することを含む、請求項10に記載の方法。
- 前記表側に前記マスクを形成することが、UV硬化性マスクを形成することを含む、請求項10に記載の方法。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201361879787P | 2013-09-19 | 2013-09-19 | |
US61/879,787 | 2013-09-19 | ||
US14/103,534 US9224650B2 (en) | 2013-09-19 | 2013-12-11 | Wafer dicing from wafer backside and front side |
US14/103,534 | 2013-12-11 | ||
PCT/US2014/053699 WO2015041842A1 (en) | 2013-09-19 | 2014-09-02 | Wafer dicing from wafer backside and front side |
Publications (2)
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JP2016533025A true JP2016533025A (ja) | 2016-10-20 |
JP6422484B2 JP6422484B2 (ja) | 2018-11-14 |
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Application Number | Title | Priority Date | Filing Date |
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JP2016515378A Active JP6422484B2 (ja) | 2013-09-19 | 2014-09-02 | ウエハの裏側及び表側からのウエハダイシング |
Country Status (8)
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US (1) | US9224650B2 (ja) |
EP (2) | EP3047517B1 (ja) |
JP (1) | JP6422484B2 (ja) |
KR (1) | KR20160055933A (ja) |
ES (1) | ES2871419T3 (ja) |
PT (1) | PT3047517T (ja) |
TW (1) | TWI655684B (ja) |
WO (1) | WO2015041842A1 (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2016207921A (ja) * | 2015-04-27 | 2016-12-08 | 株式会社ディスコ | ウエーハの分割方法 |
KR20180112688A (ko) * | 2017-04-04 | 2018-10-12 | 가부시기가이샤 디스코 | 가공 방법 |
KR20190089734A (ko) * | 2018-01-23 | 2019-07-31 | 가부시기가이샤 디스코 | 가공 방법, 에칭 장치, 및 레이저 가공 장치 |
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DE102013212577A1 (de) * | 2013-06-28 | 2014-12-31 | Trumpf Laser- Und Systemtechnik Gmbh | Verfahren zum Abtragschneiden eines Werkstücks mittels eines gepulsten Laserstrahls |
US20150147850A1 (en) * | 2013-11-25 | 2015-05-28 | Infineon Technologies Ag | Methods for processing a semiconductor workpiece |
JP5887633B1 (ja) * | 2014-10-02 | 2016-03-16 | 富士ゼロックス株式会社 | 半導体片の製造方法 |
KR101685428B1 (ko) * | 2015-07-20 | 2016-12-12 | 주식회사 이오테크닉스 | 레이저 마킹방법 |
EP3171399B1 (en) * | 2015-11-18 | 2020-06-03 | IMEC vzw | Method for singulating a stack of semiconductor wafers |
EP4002724A1 (en) | 2015-12-13 | 2022-05-25 | Genxcomm, Inc. | Interference cancellation methods and apparatus |
JP2017152569A (ja) * | 2016-02-25 | 2017-08-31 | 株式会社ディスコ | ウエーハの加工方法 |
US10257746B2 (en) | 2016-07-16 | 2019-04-09 | GenXComm, Inc. | Interference cancellation methods and apparatus |
JP6765949B2 (ja) * | 2016-12-12 | 2020-10-07 | 株式会社ディスコ | ウェーハの加工方法 |
KR101962754B1 (ko) * | 2017-07-06 | 2019-03-28 | 주식회사 이오테크닉스 | 웨이퍼 가공방법 및 웨이퍼 가공장치 |
US11664276B2 (en) | 2018-11-30 | 2023-05-30 | Texas Instruments Incorporated | Front side laser-based wafer dicing |
US11150409B2 (en) | 2018-12-27 | 2021-10-19 | GenXComm, Inc. | Saw assisted facet etch dicing |
US11114343B2 (en) * | 2019-01-25 | 2021-09-07 | Semiconductor Components Industries, Llc | Partial backside metal removal singulation system and related methods |
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TW201517153A (zh) | 2015-05-01 |
ES2871419T3 (es) | 2021-10-28 |
JP6422484B2 (ja) | 2018-11-14 |
KR20160055933A (ko) | 2016-05-18 |
TWI655684B (zh) | 2019-04-01 |
EP3869546B1 (en) | 2024-05-15 |
EP3047517A4 (en) | 2017-05-03 |
PT3047517T (pt) | 2021-05-27 |
EP3047517B1 (en) | 2021-03-17 |
US9224650B2 (en) | 2015-12-29 |
WO2015041842A1 (en) | 2015-03-26 |
EP3047517A1 (en) | 2016-07-27 |
EP3869546A1 (en) | 2021-08-25 |
US20150079761A1 (en) | 2015-03-19 |
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