PT3047517T - Corte de um wafer semicondutor a partir do lado traseiro e lado dianteiro - Google Patents
Corte de um wafer semicondutor a partir do lado traseiro e lado dianteiroInfo
- Publication number
- PT3047517T PT3047517T PT148456569T PT14845656T PT3047517T PT 3047517 T PT3047517 T PT 3047517T PT 148456569 T PT148456569 T PT 148456569T PT 14845656 T PT14845656 T PT 14845656T PT 3047517 T PT3047517 T PT 3047517T
- Authority
- PT
- Portugal
- Prior art keywords
- wafer
- front side
- backside
- dicing
- wafer dicing
- Prior art date
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/20—Bonding
- B23K26/32—Bonding taking account of the properties of the material involved
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/362—Laser etching
- B23K26/364—Laser etching for making a groove or trench, e.g. for scribing a break initiation groove
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/40—Removing material taking account of the properties of the material involved
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/40—Removing material taking account of the properties of the material involved
- B23K26/402—Removing material taking account of the properties of the material involved involving non-metallic material, e.g. isolators
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
- H01L21/3081—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their composition, e.g. multilayer masks, materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/544—Marks applied to semiconductor devices or parts, e.g. registration marks, alignment structures, wafer maps
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/08—Non-ferrous metals or alloys
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/16—Composite materials, e.g. fibre reinforced
- B23K2103/166—Multilayered materials
- B23K2103/172—Multilayered materials wherein at least one of the layers is non-metallic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/30—Organic material
- B23K2103/42—Plastics
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
- B23K2103/56—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26 semiconducting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31127—Etching organic layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/6834—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
- H01L2223/544—Marks applied to semiconductor devices or parts
- H01L2223/54433—Marks applied to semiconductor devices or parts containing identification or tracking information
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
- H01L2223/544—Marks applied to semiconductor devices or parts
- H01L2223/54473—Marks applied to semiconductor devices or parts for use after dicing
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Plasma & Fusion (AREA)
- Mechanical Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Dicing (AREA)
- Laser Beam Processing (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201361879787P | 2013-09-19 | 2013-09-19 | |
US14/103,534 US9224650B2 (en) | 2013-09-19 | 2013-12-11 | Wafer dicing from wafer backside and front side |
Publications (1)
Publication Number | Publication Date |
---|---|
PT3047517T true PT3047517T (pt) | 2021-05-27 |
Family
ID=52668310
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PT148456569T PT3047517T (pt) | 2013-09-19 | 2014-09-02 | Corte de um wafer semicondutor a partir do lado traseiro e lado dianteiro |
Country Status (8)
Country | Link |
---|---|
US (1) | US9224650B2 (pt) |
EP (2) | EP3047517B1 (pt) |
JP (1) | JP6422484B2 (pt) |
KR (1) | KR20160055933A (pt) |
ES (1) | ES2871419T3 (pt) |
PT (1) | PT3047517T (pt) |
TW (1) | TWI655684B (pt) |
WO (1) | WO2015041842A1 (pt) |
Families Citing this family (32)
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DE102013212577A1 (de) * | 2013-06-28 | 2014-12-31 | Trumpf Laser- Und Systemtechnik Gmbh | Verfahren zum Abtragschneiden eines Werkstücks mittels eines gepulsten Laserstrahls |
US20150147850A1 (en) * | 2013-11-25 | 2015-05-28 | Infineon Technologies Ag | Methods for processing a semiconductor workpiece |
JP5887633B1 (ja) * | 2014-10-02 | 2016-03-16 | 富士ゼロックス株式会社 | 半導体片の製造方法 |
JP6506606B2 (ja) * | 2015-04-27 | 2019-04-24 | 株式会社ディスコ | ウエーハの分割方法 |
KR101685428B1 (ko) * | 2015-07-20 | 2016-12-12 | 주식회사 이오테크닉스 | 레이저 마킹방법 |
EP3171399B1 (en) * | 2015-11-18 | 2020-06-03 | IMEC vzw | Method for singulating a stack of semiconductor wafers |
EP4002724A1 (en) | 2015-12-13 | 2022-05-25 | Genxcomm, Inc. | Interference cancellation methods and apparatus |
JP2017152569A (ja) * | 2016-02-25 | 2017-08-31 | 株式会社ディスコ | ウエーハの加工方法 |
US10257746B2 (en) | 2016-07-16 | 2019-04-09 | GenXComm, Inc. | Interference cancellation methods and apparatus |
JP6765949B2 (ja) * | 2016-12-12 | 2020-10-07 | 株式会社ディスコ | ウェーハの加工方法 |
JP6824581B2 (ja) * | 2017-04-04 | 2021-02-03 | 株式会社ディスコ | 加工方法 |
KR101962754B1 (ko) * | 2017-07-06 | 2019-03-28 | 주식회사 이오테크닉스 | 웨이퍼 가공방법 및 웨이퍼 가공장치 |
JP7066263B2 (ja) * | 2018-01-23 | 2022-05-13 | 株式会社ディスコ | 加工方法、エッチング装置、及びレーザ加工装置 |
US11664276B2 (en) | 2018-11-30 | 2023-05-30 | Texas Instruments Incorporated | Front side laser-based wafer dicing |
US11150409B2 (en) | 2018-12-27 | 2021-10-19 | GenXComm, Inc. | Saw assisted facet etch dicing |
US11114343B2 (en) * | 2019-01-25 | 2021-09-07 | Semiconductor Components Industries, Llc | Partial backside metal removal singulation system and related methods |
US10896819B2 (en) * | 2019-01-25 | 2021-01-19 | Semiconductor Components Industries, Llc | Backside metal photolithographic patterning die singulation systems and related methods |
US10796963B2 (en) | 2019-01-25 | 2020-10-06 | Semiconductor Components Industries, Llc | Backside metal patterning die singulation systems and related methods |
US11127634B2 (en) * | 2019-01-25 | 2021-09-21 | Semiconductor Components Industries, Llc | Backside metal removal die singulation systems and related methods |
DE102019204457B4 (de) * | 2019-03-29 | 2024-01-25 | Disco Corporation | Substratbearbeitungsverfahren |
CN110494969B (zh) * | 2019-06-27 | 2020-08-25 | 长江存储科技有限责任公司 | 在形成三维存储器器件的阶梯结构中的标记图案 |
US10727945B1 (en) | 2019-07-15 | 2020-07-28 | GenXComm, Inc. | Efficiently combining multiple taps of an optical filter |
US11215755B2 (en) | 2019-09-19 | 2022-01-04 | GenXComm, Inc. | Low loss, polarization-independent, large bandwidth mode converter for edge coupling |
US11539394B2 (en) | 2019-10-29 | 2022-12-27 | GenXComm, Inc. | Self-interference mitigation in in-band full-duplex communication systems |
US11211247B2 (en) | 2020-01-30 | 2021-12-28 | Applied Materials, Inc. | Water soluble organic-inorganic hybrid mask formulations and their applications |
US11854888B2 (en) * | 2020-06-22 | 2023-12-26 | Applied Materials, Inc. | Laser scribing trench opening control in wafer dicing using hybrid laser scribing and plasma etch approach |
US11796737B2 (en) | 2020-08-10 | 2023-10-24 | GenXComm, Inc. | Co-manufacturing of silicon-on-insulator waveguides and silicon nitride waveguides for hybrid photonic integrated circuits |
CN116096681A (zh) * | 2020-09-14 | 2023-05-09 | 斯纳普公司 | 用于波导玻璃基板的优化的激光切割工艺 |
US11688718B2 (en) * | 2021-09-07 | 2023-06-27 | STATS ChipPAC Pte. Ltd. | Semiconductor device and method of controlling warpage during LAB |
CA3234722A1 (en) | 2021-10-25 | 2023-05-04 | Farzad Mokhtari-Koushyar | Hybrid photonic integrated circuits for ultra-low phase noise signal generators |
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2013
- 2013-12-11 US US14/103,534 patent/US9224650B2/en active Active
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2014
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- 2014-09-02 ES ES14845656T patent/ES2871419T3/es active Active
- 2014-09-02 JP JP2016515378A patent/JP6422484B2/ja active Active
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- 2014-09-02 EP EP21161057.1A patent/EP3869546B1/en active Active
- 2014-09-02 PT PT148456569T patent/PT3047517T/pt unknown
- 2014-09-02 KR KR1020167010271A patent/KR20160055933A/ko not_active IP Right Cessation
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TW201517153A (zh) | 2015-05-01 |
ES2871419T3 (es) | 2021-10-28 |
JP6422484B2 (ja) | 2018-11-14 |
KR20160055933A (ko) | 2016-05-18 |
TWI655684B (zh) | 2019-04-01 |
EP3869546B1 (en) | 2024-05-15 |
EP3047517A4 (en) | 2017-05-03 |
EP3047517B1 (en) | 2021-03-17 |
JP2016533025A (ja) | 2016-10-20 |
US9224650B2 (en) | 2015-12-29 |
WO2015041842A1 (en) | 2015-03-26 |
EP3047517A1 (en) | 2016-07-27 |
EP3869546A1 (en) | 2021-08-25 |
US20150079761A1 (en) | 2015-03-19 |
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