JP2016224448A5 - - Google Patents
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- JP2016224448A5 JP2016224448A5 JP2016111083A JP2016111083A JP2016224448A5 JP 2016224448 A5 JP2016224448 A5 JP 2016224448A5 JP 2016111083 A JP2016111083 A JP 2016111083A JP 2016111083 A JP2016111083 A JP 2016111083A JP 2016224448 A5 JP2016224448 A5 JP 2016224448A5
- Authority
- JP
- Japan
- Prior art keywords
- pattern processing
- group
- pattern
- monomer
- block
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 claims description 12
- 239000000178 monomer Substances 0.000 claims description 7
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 6
- 125000003118 aryl group Chemical group 0.000 claims description 6
- 239000001257 hydrogen Substances 0.000 claims description 6
- 229910052739 hydrogen Inorganic materials 0.000 claims description 6
- 239000000203 mixture Substances 0.000 claims description 6
- 239000004065 semiconductor Substances 0.000 claims description 6
- 229920001400 block copolymer Polymers 0.000 claims description 5
- 238000003672 processing method Methods 0.000 claims description 4
- 125000006850 spacer group Chemical group 0.000 claims description 4
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Natural products C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 claims description 3
- 125000006273 (C1-C3) alkyl group Chemical group 0.000 claims description 2
- 125000001931 aliphatic group Chemical group 0.000 claims description 2
- 125000001188 haloalkyl group Chemical group 0.000 claims description 2
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims description 2
- 239000002904 solvent Substances 0.000 claims description 2
- 125000003011 styrenyl group Chemical group [H]\C(*)=C(/[H])C1=C([H])C([H])=C([H])C([H])=C1[H] 0.000 claims 1
- 239000000463 material Substances 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 2
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N diphenyl Chemical compound C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 description 2
- 125000001725 pyrenyl group Chemical group 0.000 description 2
- 125000005023 xylyl group Chemical group 0.000 description 2
- UQRONKZLYKUEMO-UHFFFAOYSA-N 4-methyl-1-(2,4,6-trimethylphenyl)pent-4-en-2-one Chemical group CC(=C)CC(=O)Cc1c(C)cc(C)cc1C UQRONKZLYKUEMO-UHFFFAOYSA-N 0.000 description 1
- 125000000172 C5-C10 aryl group Chemical group 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 125000002178 anthracenyl group Chemical group C1(=CC=CC2=CC3=CC=CC=C3C=C12)* 0.000 description 1
- 125000005605 benzo group Chemical group 0.000 description 1
- 125000001797 benzyl group Chemical group [H]C1=C([H])C([H])=C(C([H])=C1[H])C([H])([H])* 0.000 description 1
- 235000010290 biphenyl Nutrition 0.000 description 1
- 239000004305 biphenyl Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 125000004965 chloroalkyl group Chemical group 0.000 description 1
- 229920001577 copolymer Polymers 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 125000002592 cumenyl group Chemical group C1(=C(C=CC=C1)*)C(C)C 0.000 description 1
- 125000003709 fluoroalkyl group Chemical group 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 125000001624 naphthyl group Chemical group 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 125000001792 phenanthrenyl group Chemical group C1(=CC=CC=2C3=CC=CC=C3C=CC12)* 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- 125000004076 pyridyl group Chemical group 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 125000003944 tolyl group Chemical group 0.000 description 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201562170516P | 2015-06-03 | 2015-06-03 | |
| US62/170,516 | 2015-06-03 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2016224448A JP2016224448A (ja) | 2016-12-28 |
| JP2016224448A5 true JP2016224448A5 (enExample) | 2017-08-31 |
| JP6231162B2 JP6231162B2 (ja) | 2017-11-15 |
Family
ID=57452528
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2016111083A Expired - Fee Related JP6231162B2 (ja) | 2015-06-03 | 2016-06-02 | パターン処理法 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US9665005B2 (enExample) |
| JP (1) | JP6231162B2 (enExample) |
| KR (2) | KR20160142787A (enExample) |
| CN (1) | CN106249539A (enExample) |
| TW (1) | TWI617900B (enExample) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2016223046A (ja) * | 2015-06-04 | 2016-12-28 | 東京応化工業株式会社 | 表面にパターンを有する繊維の製造方法 |
| US10162265B2 (en) * | 2015-12-09 | 2018-12-25 | Rohm And Haas Electronic Materials Llc | Pattern treatment methods |
| US9910355B2 (en) * | 2016-07-29 | 2018-03-06 | Rohm And Haas Electronic Materials Llc | Method of negative tone development using a copolymer multilayer electrolyte and articles made therefrom |
| US9910353B2 (en) * | 2016-07-29 | 2018-03-06 | Dow Global Technologies Llc | Method of negative tone development using a copolymer multilayer electrolyte and articles made therefrom |
| US10133179B2 (en) * | 2016-07-29 | 2018-11-20 | Rohm And Haas Electronic Materials Llc | Pattern treatment methods |
| JP6823992B2 (ja) * | 2016-10-12 | 2021-02-03 | 東京応化工業株式会社 | レジストパターン形成方法、及びパターン厚肉化用ポリマー組成物 |
| KR102288981B1 (ko) | 2017-04-17 | 2021-08-13 | 에스케이하이닉스 주식회사 | 임프린트 템플레이트 및 임프린트 패턴 형성 방법 |
| KR102325779B1 (ko) * | 2017-08-22 | 2021-11-12 | 에스케이이노베이션 주식회사 | 중성층 형성용 랜덤 공중합체 및 이를 포함하는 패턴 형성용 적층체, 이를 이용한 패턴 형성 방법 |
| US10684545B2 (en) * | 2017-11-17 | 2020-06-16 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method for forming semiconductor structure by patterning assist layer having polymer |
| CN113621278B (zh) * | 2021-08-30 | 2022-05-27 | 厦门恒坤新材料科技股份有限公司 | 一种与光刻胶配合使用的底部抗反射涂料组合物及光刻胶浮雕图像形成方法 |
Family Cites Families (28)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63179360A (ja) * | 1987-01-20 | 1988-07-23 | Fuji Photo Film Co Ltd | 平版印刷原版 |
| US5219945A (en) * | 1992-02-20 | 1993-06-15 | E. I. Du Pont De Nemours And Company | ABC triblock methacrylate polymers |
| TW536734B (en) * | 2000-07-31 | 2003-06-11 | Clariant Int Ltd | Process for manufacturing a microelectronic device |
| JP3675434B2 (ja) | 2002-10-10 | 2005-07-27 | 東京応化工業株式会社 | 微細パターンの形成方法 |
| KR100585138B1 (ko) * | 2004-04-08 | 2006-05-30 | 삼성전자주식회사 | 반도체 소자 제조용 마스크 패턴 및 그 형성 방법과 미세패턴을 가지는 반도체 소자의 제조 방법 |
| JP4859437B2 (ja) * | 2005-10-25 | 2012-01-25 | 大阪有機化学工業株式会社 | 被膜形成用樹脂組成物 |
| JP4558064B2 (ja) | 2007-05-15 | 2010-10-06 | 富士フイルム株式会社 | パターン形成方法 |
| JP2009085989A (ja) * | 2007-09-27 | 2009-04-23 | Jsr Corp | 微細パターン形成用樹脂組成物および微細パターン形成方法 |
| US7745077B2 (en) | 2008-06-18 | 2010-06-29 | Az Electronic Materials Usa Corp. | Composition for coating over a photoresist pattern |
| US8821978B2 (en) | 2009-12-18 | 2014-09-02 | International Business Machines Corporation | Methods of directed self-assembly and layered structures formed therefrom |
| JP5440468B2 (ja) * | 2010-01-20 | 2014-03-12 | 信越化学工業株式会社 | パターン形成方法 |
| JP5705669B2 (ja) * | 2011-07-14 | 2015-04-22 | メルクパフォーマンスマテリアルズＩｐ合同会社 | 微細パターン形成用組成物およびそれを用いた微細化されたパターン形成方法 |
| JP5793399B2 (ja) | 2011-11-04 | 2015-10-14 | 富士フイルム株式会社 | パターン形成方法及びその方法に用いる架橋層形成用組成物 |
| JP5979660B2 (ja) | 2012-02-09 | 2016-08-24 | 東京応化工業株式会社 | コンタクトホールパターンの形成方法 |
| JP5891075B2 (ja) | 2012-03-08 | 2016-03-22 | 東京応化工業株式会社 | ブロックコポリマー含有組成物及びパターンの縮小方法 |
| US9127113B2 (en) * | 2012-05-16 | 2015-09-08 | Rohm And Haas Electronic Materials Llc | Polystyrene-polyacrylate block copolymers, methods of manufacture thereof and articles comprising the same |
| JPWO2014003023A1 (ja) * | 2012-06-29 | 2016-06-02 | Jsr株式会社 | パターン形成用組成物及びパターン形成方法 |
| JP5887244B2 (ja) * | 2012-09-28 | 2016-03-16 | 富士フイルム株式会社 | パターン形成用自己組織化組成物、それを用いたブロックコポリマーの自己組織化によるパターン形成方法、及び自己組織化パターン、並びに電子デバイスの製造方法 |
| US9606440B2 (en) | 2013-02-25 | 2017-03-28 | The University Of Queensland | Lithographically produced features |
| KR20140120212A (ko) | 2013-04-02 | 2014-10-13 | 주식회사 동진쎄미켐 | 미세패턴 형성용 코팅 조성물 및 이를 이용한 미세패턴 형성방법 |
| JP5981392B2 (ja) * | 2013-06-19 | 2016-08-31 | 株式会社東芝 | パターン形成方法 |
| JP6134619B2 (ja) | 2013-09-13 | 2017-05-24 | 富士フイルム株式会社 | パターン形成方法、及び、電子デバイスの製造方法 |
| JP6233240B2 (ja) * | 2013-09-26 | 2017-11-22 | 信越化学工業株式会社 | パターン形成方法 |
| KR102198023B1 (ko) | 2013-10-30 | 2021-01-05 | 삼성전자주식회사 | 반도체 소자의 패턴 형성방법 |
| JP6347148B2 (ja) * | 2014-05-08 | 2018-06-27 | Jsr株式会社 | パターン形成用組成物及びパターン形成方法 |
| JP6459759B2 (ja) | 2014-05-26 | 2019-01-30 | 信越化学工業株式会社 | パターン形成方法及びシュリンク剤 |
| US9448483B2 (en) | 2014-07-31 | 2016-09-20 | Dow Global Technologies Llc | Pattern shrink methods |
| JP6481602B2 (ja) * | 2015-01-09 | 2019-03-13 | 信越化学工業株式会社 | パターン形成方法及びシュリンク剤 |
-
2016
- 2016-05-30 TW TW105116934A patent/TWI617900B/zh not_active IP Right Cessation
- 2016-06-01 CN CN201610380663.XA patent/CN106249539A/zh active Pending
- 2016-06-02 KR KR1020160069090A patent/KR20160142787A/ko not_active Ceased
- 2016-06-02 JP JP2016111083A patent/JP6231162B2/ja not_active Expired - Fee Related
- 2016-06-03 US US15/172,228 patent/US9665005B2/en not_active Expired - Fee Related
-
2018
- 2018-03-22 KR KR1020180033295A patent/KR20180032547A/ko not_active Withdrawn
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