JP2019505088A5 - - Google Patents

Download PDF

Info

Publication number
JP2019505088A5
JP2019505088A5 JP2018522911A JP2018522911A JP2019505088A5 JP 2019505088 A5 JP2019505088 A5 JP 2019505088A5 JP 2018522911 A JP2018522911 A JP 2018522911A JP 2018522911 A JP2018522911 A JP 2018522911A JP 2019505088 A5 JP2019505088 A5 JP 2019505088A5
Authority
JP
Japan
Prior art keywords
ring
edge
edge ring
electrostatic chuck
disposed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2018522911A
Other languages
English (en)
Japanese (ja)
Other versions
JP6888007B2 (ja
JP2019505088A (ja
Filing date
Publication date
Application filed filed Critical
Priority claimed from PCT/US2016/069449 external-priority patent/WO2017131927A1/en
Publication of JP2019505088A publication Critical patent/JP2019505088A/ja
Publication of JP2019505088A5 publication Critical patent/JP2019505088A5/ja
Priority to JP2021084341A priority Critical patent/JP7185725B2/ja
Application granted granted Critical
Publication of JP6888007B2 publication Critical patent/JP6888007B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2018522911A 2016-01-26 2016-12-30 ウェハエッジリングの持ち上げに関する解決 Active JP6888007B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2021084341A JP7185725B2 (ja) 2016-01-26 2021-05-19 ウェハエッジリングの持ち上げに関する解決

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201662287038P 2016-01-26 2016-01-26
US62/287,038 2016-01-26
IN201641019009 2016-06-02
IN201641019009 2016-06-02
PCT/US2016/069449 WO2017131927A1 (en) 2016-01-26 2016-12-30 Wafer edge ring lifting solution

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2021084341A Division JP7185725B2 (ja) 2016-01-26 2021-05-19 ウェハエッジリングの持ち上げに関する解決

Publications (3)

Publication Number Publication Date
JP2019505088A JP2019505088A (ja) 2019-02-21
JP2019505088A5 true JP2019505088A5 (enExample) 2019-12-26
JP6888007B2 JP6888007B2 (ja) 2021-06-16

Family

ID=65476895

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2018522911A Active JP6888007B2 (ja) 2016-01-26 2016-12-30 ウェハエッジリングの持ち上げに関する解決
JP2021084341A Active JP7185725B2 (ja) 2016-01-26 2021-05-19 ウェハエッジリングの持ち上げに関する解決

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2021084341A Active JP7185725B2 (ja) 2016-01-26 2021-05-19 ウェハエッジリングの持ち上げに関する解決

Country Status (4)

Country Link
US (2) US12094752B2 (enExample)
JP (2) JP6888007B2 (enExample)
CN (1) CN116110846A (enExample)
TW (1) TWI748437B (enExample)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5690596B2 (ja) * 2011-01-07 2015-03-25 東京エレクトロン株式会社 フォーカスリング及び該フォーカスリングを備える基板処理装置
US10658222B2 (en) 2015-01-16 2020-05-19 Lam Research Corporation Moveable edge coupling ring for edge process control during semiconductor wafer processing
KR102617972B1 (ko) 2017-11-21 2023-12-22 램 리써치 코포레이션 하단 링 및 중간 에지 링
US11798789B2 (en) 2018-08-13 2023-10-24 Lam Research Corporation Replaceable and/or collapsible edge ring assemblies for plasma sheath tuning incorporating edge ring positioning and centering features
JP7105666B2 (ja) * 2018-09-26 2022-07-25 東京エレクトロン株式会社 プラズマ処理装置
JP7134104B2 (ja) * 2019-01-09 2022-09-09 東京エレクトロン株式会社 プラズマ処理装置およびプラズマ処理装置の載置台
TWM602283U (zh) * 2019-08-05 2020-10-01 美商蘭姆研究公司 基板處理系統用之具有升降銷溝槽的邊緣環
JP7597788B2 (ja) * 2019-08-05 2024-12-10 ラム リサーチ コーポレーション 基板処理システムのためのエッジリングシステム
JP7339062B2 (ja) * 2019-08-09 2023-09-05 東京エレクトロン株式会社 載置台及び基板処理装置
WO2021030184A1 (en) * 2019-08-14 2021-02-18 Lam Research Corporation Moveable edge rings for substrate processing systems
JP7465733B2 (ja) * 2019-09-26 2024-04-11 東京エレクトロン株式会社 基板支持器及びプラズマ処理装置
TWI871434B (zh) 2020-03-03 2025-02-01 日商東京威力科創股份有限公司 電漿處理系統及邊緣環的更換方法
WO2021194470A1 (en) * 2020-03-23 2021-09-30 Lam Research Corporation Mid-ring erosion compensation in substrate processing systems
JP7580328B2 (ja) * 2020-06-05 2024-11-11 東京エレクトロン株式会社 プラズマ処理装置
CN112397366B (zh) * 2020-11-05 2023-07-14 北京北方华创微电子装备有限公司 一种承载装置及半导体反应腔室
JP2022150471A (ja) * 2021-03-26 2022-10-07 三菱電機株式会社 半導体製造装置および半導体装置の製造方法
US11881375B2 (en) * 2021-04-15 2024-01-23 Applied Materials, Inc. Common substrate and shadow ring lift apparatus
JP7617816B2 (ja) * 2021-06-18 2025-01-20 東京エレクトロン株式会社 プラズマ処理装置
KR102491002B1 (ko) * 2021-06-28 2023-01-27 세메스 주식회사 링 부재 및 이를 가지는 기판 처리 장치
US20230118651A1 (en) * 2021-09-02 2023-04-20 Applied Materials, Inc. Replaceable electrostatic chuck outer ring for edge arcing mitigation
JP7769538B2 (ja) 2021-12-07 2025-11-13 東京エレクトロン株式会社 基板支持台及びリングの交換方法
JP2023098599A (ja) * 2021-12-28 2023-07-10 東京エレクトロン株式会社 プラズマ処理装置
KR20240161340A (ko) * 2023-05-04 2024-11-12 삼성전자주식회사 포커스 링 및 이를 포함하는 기판 처리 장치

Family Cites Families (146)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100188454B1 (ko) 1991-05-28 1999-06-01 이노우에 아키라 기판 처리 장치
JP2638443B2 (ja) 1993-08-31 1997-08-06 日本電気株式会社 ドライエッチング方法およびドライエッチング装置
US5730801A (en) 1994-08-23 1998-03-24 Applied Materials, Inc. Compartnetalized substrate processing chamber
US5762714A (en) 1994-10-18 1998-06-09 Applied Materials, Inc. Plasma guard for chamber equipped with electrostatic chuck
JP2713276B2 (ja) 1995-12-07 1998-02-16 日本電気株式会社 半導体装置の製造装置およびこれを用いた半導体装置の製造方法
US5748434A (en) * 1996-06-14 1998-05-05 Applied Materials, Inc. Shield for an electrostatic chuck
US5885428A (en) 1996-12-04 1999-03-23 Applied Materials, Inc. Method and apparatus for both mechanically and electrostatically clamping a wafer to a pedestal within a semiconductor wafer processing system
US5851140A (en) 1997-02-13 1998-12-22 Integrated Process Equipment Corp. Semiconductor wafer polishing apparatus with a flexible carrier plate
JP3020898B2 (ja) 1997-07-22 2000-03-15 株式会社エイ・ティ・アール人間情報通信研究所 アフィンカメラ補正による三次元位置の線形推定方法
DE59812627D1 (de) 1997-12-23 2005-04-07 Unaxis Balzers Ag Haltevorrichtung
US6773562B1 (en) 1998-02-20 2004-08-10 Applied Materials, Inc. Shadow frame for substrate processing
JP2000049144A (ja) 1998-07-28 2000-02-18 Hitachi Chem Co Ltd プラズマ処理装置用電極板
JP3234576B2 (ja) 1998-10-30 2001-12-04 アプライド マテリアルズ インコーポレイテッド 半導体製造装置におけるウェハ支持装置
JP4119551B2 (ja) * 1998-12-01 2008-07-16 東京エレクトロン株式会社 基板保持台、及びプラズマ処理装置
US6022809A (en) 1998-12-03 2000-02-08 Taiwan Semiconductor Manufacturing Company, Ltd. Composite shadow ring for an etch chamber and method of using
US6709547B1 (en) 1999-06-30 2004-03-23 Lam Research Corporation Moveable barrier for multiple etch processes
US6344105B1 (en) * 1999-06-30 2002-02-05 Lam Research Corporation Techniques for improving etch rate uniformity
US6206976B1 (en) 1999-08-27 2001-03-27 Lucent Technologies Inc. Deposition apparatus and related method with controllable edge exclusion
US6375748B1 (en) 1999-09-01 2002-04-23 Applied Materials, Inc. Method and apparatus for preventing edge deposition
US6589352B1 (en) 1999-12-10 2003-07-08 Applied Materials, Inc. Self aligning non contact shadow ring process kit
JP4417574B2 (ja) * 2000-02-14 2010-02-17 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
JP2001230239A (ja) * 2000-02-15 2001-08-24 Tokyo Electron Ltd 処理装置及び処理方法
TW506234B (en) 2000-09-18 2002-10-11 Tokyo Electron Ltd Tunable focus ring for plasma processing
US6391787B1 (en) 2000-10-13 2002-05-21 Lam Research Corporation Stepped upper electrode for plasma processing uniformity
JP3388228B2 (ja) 2000-12-07 2003-03-17 株式会社半導体先端テクノロジーズ プラズマエッチング装置、及びプラズマエッチング方法
US7138014B2 (en) 2002-01-28 2006-11-21 Applied Materials, Inc. Electroless deposition apparatus
US6744212B2 (en) 2002-02-14 2004-06-01 Lam Research Corporation Plasma processing apparatus and method for confining an RF plasma under very high gas flow and RF power density conditions
US6776849B2 (en) 2002-03-15 2004-08-17 Asm America, Inc. Wafer holder with peripheral lift ring
US6896765B2 (en) 2002-09-18 2005-05-24 Lam Research Corporation Method and apparatus for the compensation of edge ring wear in a plasma processing chamber
US7252738B2 (en) 2002-09-20 2007-08-07 Lam Research Corporation Apparatus for reducing polymer deposition on a substrate and substrate support
US7311784B2 (en) 2002-11-26 2007-12-25 Tokyo Electron Limited Plasma processing device
US6898558B2 (en) 2002-12-31 2005-05-24 Tokyo Electron Limited Method and apparatus for monitoring a material processing system
US20040261946A1 (en) 2003-04-24 2004-12-30 Tokyo Electron Limited Plasma processing apparatus, focus ring, and susceptor
TW200520632A (en) * 2003-09-05 2005-06-16 Tokyo Electron Ltd Focus ring and plasma processing apparatus
KR100578129B1 (ko) 2003-09-19 2006-05-10 삼성전자주식회사 플라즈마 식각 장치
US7244336B2 (en) 2003-12-17 2007-07-17 Lam Research Corporation Temperature controlled hot edge ring assembly for reducing plasma reactor etch rate drift
US7338578B2 (en) 2004-01-20 2008-03-04 Taiwan Semiconductor Manufacturing Co., Ltd. Step edge insert ring for etch chamber
US20050189068A1 (en) 2004-02-27 2005-09-01 Kawasaki Microelectronics, Inc. Plasma processing apparatus and method of plasma processing
US20050263070A1 (en) 2004-05-25 2005-12-01 Tokyo Electron Limited Pressure control and plasma confinement in a plasma processing chamber
US7138067B2 (en) 2004-09-27 2006-11-21 Lam Research Corporation Methods and apparatus for tuning a set of plasma processing steps
JP4006004B2 (ja) 2004-12-28 2007-11-14 株式会社東芝 半導体製造装置及び半導体装置の製造方法
KR20060117537A (ko) 2005-05-11 2006-11-17 삼성전자주식회사 리프트 핀 높이 정렬용 지그 및 이를 이용한 리프트 핀높이 정렬 방법
WO2007043528A1 (ja) 2005-10-12 2007-04-19 Matsushita Electric Industrial Co., Ltd. プラズマ処理装置、プラズマ処理方法、及びトレイ
US7846257B2 (en) 2005-12-14 2010-12-07 Tokyo Electron Limited Method for cleaning substrate processing apparatus, substrate processing apparatus, program and recording medium having program recorded therein
CN101847574B (zh) * 2006-01-31 2012-11-07 东京毅力科创株式会社 基板处理装置和暴露于等离子体的部件
KR20080001163A (ko) * 2006-06-29 2008-01-03 주식회사 하이닉스반도체 홀 휘어짐 방지를 위한 플라즈마 식각 장치
US7572737B1 (en) 2006-06-30 2009-08-11 Lam Research Corporation Apparatus and methods for adjusting an edge ring potential substrate processing
KR20080023569A (ko) * 2006-09-11 2008-03-14 주식회사 하이닉스반도체 식각프로파일 변형을 방지하는 플라즈마식각장치
US20080066868A1 (en) 2006-09-19 2008-03-20 Tokyo Electron Limited Focus ring and plasma processing apparatus
JP2008078208A (ja) * 2006-09-19 2008-04-03 Tokyo Electron Ltd フォーカスリング及びプラズマ処理装置
US7589950B2 (en) 2006-10-13 2009-09-15 Applied Materials, Inc. Detachable electrostatic chuck having sealing assembly
KR100849179B1 (ko) * 2007-01-10 2008-07-30 삼성전자주식회사 갭 발생방지구조 및 이를 갖는 플라즈마 처리설비
KR20090106617A (ko) 2007-01-19 2009-10-09 어플라이드 머티어리얼스, 인코포레이티드 플라스마 함침 챔버
US7968469B2 (en) 2007-01-30 2011-06-28 Applied Materials, Inc. Method of processing a workpiece in a plasma reactor with variable height ground return path to control plasma ion density uniformity
JP5317424B2 (ja) * 2007-03-28 2013-10-16 東京エレクトロン株式会社 プラズマ処理装置
US20080289766A1 (en) 2007-05-22 2008-11-27 Samsung Austin Semiconductor Lp Hot edge ring apparatus and method for increased etch rate uniformity and reduced polymer buildup
KR100963297B1 (ko) 2007-09-04 2010-06-11 주식회사 유진테크 샤워헤드 및 이를 포함하는 기판처리장치, 샤워헤드를이용하여 플라스마를 공급하는 방법
US8343305B2 (en) 2007-09-04 2013-01-01 Lam Research Corporation Method and apparatus for diagnosing status of parts in real time in plasma processing equipment
US7824146B2 (en) 2007-09-07 2010-11-02 Advanced Technology Development Facility Automated systems and methods for adapting semiconductor fabrication tools to process wafers of different diameters
US8999106B2 (en) 2007-12-19 2015-04-07 Applied Materials, Inc. Apparatus and method for controlling edge performance in an inductively coupled plasma chamber
US20090220865A1 (en) * 2008-02-29 2009-09-03 Applied Materials, Inc. Method and apparatus for source field shaping in a plasma etch reactor
WO2009154853A2 (en) 2008-04-16 2009-12-23 Applied Materials, Inc. Wafer processing deposition shielding components
US8398777B2 (en) 2008-05-02 2013-03-19 Applied Materials, Inc. System and method for pedestal adjustment
JP2010034416A (ja) * 2008-07-30 2010-02-12 Hitachi High-Technologies Corp プラズマ処理装置およびプラズマ処理方法
US20100101729A1 (en) 2008-10-28 2010-04-29 Applied Materials, Inc. Process kit having reduced erosion sensitivity
JP5406067B2 (ja) 2009-02-16 2014-02-05 キヤノンアネルバ株式会社 トレイ及び真空処理装置
US9435029B2 (en) 2010-08-29 2016-09-06 Advanced Energy Industries, Inc. Wafer chucking system for advanced plasma ion energy processing systems
US20110011534A1 (en) 2009-07-17 2011-01-20 Rajinder Dhindsa Apparatus for adjusting an edge ring potential during substrate processing
JP5650935B2 (ja) * 2009-08-07 2015-01-07 東京エレクトロン株式会社 基板処理装置及び位置決め方法並びにフォーカスリング配置方法
US8409995B2 (en) 2009-08-07 2013-04-02 Tokyo Electron Limited Substrate processing apparatus, positioning method and focus ring installation method
WO2011026126A2 (en) 2009-08-31 2011-03-03 Lam Research Corporation A multi-peripheral ring arrangement for performing plasma confinement
US8270141B2 (en) * 2009-11-20 2012-09-18 Applied Materials, Inc. Electrostatic chuck with reduced arcing
JP5584517B2 (ja) 2010-05-12 2014-09-03 東京エレクトロン株式会社 プラズマ処理装置及び半導体装置の製造方法
JP5654297B2 (ja) 2010-09-14 2015-01-14 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
US8633423B2 (en) 2010-10-14 2014-01-21 Applied Materials, Inc. Methods and apparatus for controlling substrate temperature in a process chamber
JP5690596B2 (ja) 2011-01-07 2015-03-25 東京エレクトロン株式会社 フォーカスリング及び該フォーカスリングを備える基板処理装置
JP5719599B2 (ja) * 2011-01-07 2015-05-20 東京エレクトロン株式会社 基板処理装置
US20140017900A1 (en) 2011-03-29 2014-01-16 Tokyo Electron Limited Plasma etching apparatus and plasma etching method
KR101926571B1 (ko) 2011-05-31 2018-12-10 어플라이드 머티어리얼스, 인코포레이티드 유도성 커플링된 플라즈마(icp) 반응기를 위한 동적인 이온 라디칼 시브 및 이온 라디칼 개구
JP5948026B2 (ja) 2011-08-17 2016-07-06 東京エレクトロン株式会社 半導体製造装置及び処理方法
KR101267459B1 (ko) 2011-09-08 2013-05-31 한국과학기술연구원 플라즈마 이온주입 장치 및 방법
US8933628B2 (en) 2011-10-28 2015-01-13 Applied Materials, Inc. Inductively coupled plasma source with phase control
US10825708B2 (en) 2011-12-15 2020-11-03 Applied Materials, Inc. Process kit components for use with an extended and independent RF powered cathode substrate for extreme edge tunability
JP5905735B2 (ja) * 2012-02-21 2016-04-20 東京エレクトロン株式会社 基板処理装置、基板処理方法及び基板温度の設定可能帯域の変更方法
JP2014019912A (ja) * 2012-07-19 2014-02-03 Tokyo Electron Ltd タングステン膜の成膜方法
KR20140004724U (ko) 2013-02-12 2014-08-20 어플라이드 머티어리얼스, 인코포레이티드 실리콘 기판들의 프로세스를 위한 고성능 및 긴 수명의 에지 링
US9287147B2 (en) 2013-03-14 2016-03-15 Applied Materials, Inc. Substrate support with advanced edge control provisions
US9017526B2 (en) 2013-07-08 2015-04-28 Lam Research Corporation Ion beam etching system
US9123661B2 (en) * 2013-08-07 2015-09-01 Lam Research Corporation Silicon containing confinement ring for plasma processing apparatus and method of forming thereof
KR20160047540A (ko) 2013-08-30 2016-05-02 어플라이드 머티어리얼스, 인코포레이티드 기판 지지 시스템
JP2015050156A (ja) * 2013-09-04 2015-03-16 東京エレクトロン株式会社 基板載置台及びプラズマ処理装置
WO2015099892A1 (en) 2013-12-23 2015-07-02 Applied Materials, Inc. Extreme edge and skew control in icp plasma reactor
US9410249B2 (en) * 2014-05-15 2016-08-09 Infineon Technologies Ag Wafer releasing
CN105336561B (zh) 2014-07-18 2017-07-21 中微半导体设备(上海)有限公司 等离子体刻蚀装置
JP6345030B2 (ja) 2014-08-11 2018-06-20 東京エレクトロン株式会社 プラズマ処理装置及びフォーカスリング
KR20160022458A (ko) 2014-08-19 2016-03-02 삼성전자주식회사 플라즈마 장비 및 이의 동작 방법
CN105789010B (zh) 2014-12-24 2017-11-10 中微半导体设备(上海)有限公司 等离子体处理装置及等离子体分布的调节方法
US20170263478A1 (en) 2015-01-16 2017-09-14 Lam Research Corporation Detection System for Tunable/Replaceable Edge Coupling Ring
US10658222B2 (en) 2015-01-16 2020-05-19 Lam Research Corporation Moveable edge coupling ring for edge process control during semiconductor wafer processing
US11605546B2 (en) 2015-01-16 2023-03-14 Lam Research Corporation Moveable edge coupling ring for edge process control during semiconductor wafer processing
JP6456177B2 (ja) 2015-02-12 2019-01-23 株式会社ディスコ ウェーハ処理システム
US10163610B2 (en) 2015-07-13 2018-12-25 Lam Research Corporation Extreme edge sheath and wafer profile tuning through edge-localized ion trajectory control and plasma operation
US9761459B2 (en) 2015-08-05 2017-09-12 Lam Research Corporation Systems and methods for reverse pulsing
US9620376B2 (en) 2015-08-19 2017-04-11 Lam Research Corporation Self limiting lateral atomic layer etch
US9984858B2 (en) 2015-09-04 2018-05-29 Lam Research Corporation ALE smoothness: in and outside semiconductor industry
US9761414B2 (en) 2015-10-08 2017-09-12 Lam Research Corporation Uniformity control circuit for use within an impedance matching circuit
US10192751B2 (en) 2015-10-15 2019-01-29 Lam Research Corporation Systems and methods for ultrahigh selective nitride etch
KR102634280B1 (ko) * 2015-10-21 2024-02-07 스미토모 오사카 세멘토 가부시키가이샤 정전 척 장치
US10062599B2 (en) 2015-10-22 2018-08-28 Lam Research Corporation Automated replacement of consumable parts using interfacing chambers
US9881820B2 (en) 2015-10-22 2018-01-30 Lam Research Corporation Front opening ring pod
US10124492B2 (en) 2015-10-22 2018-11-13 Lam Research Corporation Automated replacement of consumable parts using end effectors interfacing with plasma processing system
US20170115657A1 (en) 2015-10-22 2017-04-27 Lam Research Corporation Systems for Removing and Replacing Consumable Parts from a Semiconductor Process Module in Situ
US10985078B2 (en) 2015-11-06 2021-04-20 Lam Research Corporation Sensor and adjuster for a consumable
US9601319B1 (en) 2016-01-07 2017-03-21 Lam Research Corporation Systems and methods for eliminating flourine residue in a substrate processing chamber using a plasma-based process
KR102689380B1 (ko) 2016-01-26 2024-07-26 어플라이드 머티어리얼스, 인코포레이티드 웨이퍼 에지 링 리프팅 솔루션
US10651015B2 (en) 2016-02-12 2020-05-12 Lam Research Corporation Variable depth edge ring for etch uniformity control
US10699878B2 (en) 2016-02-12 2020-06-30 Lam Research Corporation Chamber member of a plasma source and pedestal with radially outward positioned lift pins for translation of a substrate c-ring
US10438833B2 (en) 2016-02-16 2019-10-08 Lam Research Corporation Wafer lift ring system for wafer transfer
US9966231B2 (en) 2016-02-29 2018-05-08 Lam Research Corporation Direct current pulsing plasma systems
US20170278679A1 (en) 2016-03-24 2017-09-28 Lam Research Corporation Method and apparatus for controlling process within wafer uniformity
US11011353B2 (en) 2016-03-29 2021-05-18 Lam Research Corporation Systems and methods for performing edge ring characterization
US10312121B2 (en) 2016-03-29 2019-06-04 Lam Research Corporation Systems and methods for aligning measurement device in substrate processing systems
US10269566B2 (en) 2016-04-29 2019-04-23 Lam Research Corporation Etching substrates using ale and selective deposition
US9852889B1 (en) 2016-06-22 2017-12-26 Lam Research Corporation Systems and methods for controlling directionality of ions in an edge region by using an electrode within a coupling ring
JP6635888B2 (ja) 2016-07-14 2020-01-29 東京エレクトロン株式会社 プラズマ処理システム
US10921251B2 (en) 2016-08-22 2021-02-16 Applied Materials, Inc. Chamber component part wear indicator and a system for detecting part wear
US20180061696A1 (en) 2016-08-23 2018-03-01 Applied Materials, Inc. Edge ring or process kit for semiconductor process module
JP2018054500A (ja) 2016-09-29 2018-04-05 東京エレクトロン株式会社 位置検出システム及び処理装置
JP6812224B2 (ja) 2016-12-08 2021-01-13 東京エレクトロン株式会社 基板処理装置及び載置台
US9947517B1 (en) 2016-12-16 2018-04-17 Applied Materials, Inc. Adjustable extended electrode for edge uniformity control
JP6869034B2 (ja) 2017-01-17 2021-05-12 東京エレクトロン株式会社 プラズマ処理装置
US10553404B2 (en) * 2017-02-01 2020-02-04 Applied Materials, Inc. Adjustable extended electrode for edge uniformity control
JP6812264B2 (ja) 2017-02-16 2021-01-13 東京エレクトロン株式会社 真空処理装置、及びメンテナンス装置
US11404249B2 (en) 2017-03-22 2022-08-02 Tokyo Electron Limited Substrate processing apparatus
JP6656200B2 (ja) 2017-04-12 2020-03-04 東京エレクトロン株式会社 位置検出システム及び処理装置
TWI843457B (zh) 2017-04-26 2024-05-21 日商東京威力科創股份有限公司 電漿處理裝置
KR101927936B1 (ko) * 2017-06-09 2018-12-11 세메스 주식회사 기판 처리 장치
US11075105B2 (en) 2017-09-21 2021-07-27 Applied Materials, Inc. In-situ apparatus for semiconductor process module
KR102612989B1 (ko) 2017-12-01 2023-12-11 어플라이드 머티어리얼스, 인코포레이티드 고 에칭 선택성 비정질 탄소 막
JP7033441B2 (ja) 2017-12-01 2022-03-10 東京エレクトロン株式会社 プラズマ処理装置
US11043400B2 (en) 2017-12-21 2021-06-22 Applied Materials, Inc. Movable and removable process kit
JP7055054B2 (ja) 2018-04-11 2022-04-15 東京エレクトロン株式会社 プラズマ処理装置、プラズマ制御方法、及びプラズマ制御プログラム
JP6995008B2 (ja) 2018-04-27 2022-01-14 東京エレクトロン株式会社 基板処理装置
US10790123B2 (en) 2018-05-28 2020-09-29 Applied Materials, Inc. Process kit with adjustable tuning ring for edge uniformity control
US11935773B2 (en) 2018-06-14 2024-03-19 Applied Materials, Inc. Calibration jig and calibration method
US11011351B2 (en) 2018-07-13 2021-05-18 Lam Research Corporation Monoenergetic ion generation for controlled etch

Similar Documents

Publication Publication Date Title
JP2019505088A5 (enExample)
JP2013539913A5 (ja) 静電デチャックを行う装置及び方法、並びに、半導体ウェハを処理するチャンバ
TWI695413B (zh) 用於處理基板的裝置及用於該裝置的基板邊緣環的升降解決方案
JP2021122064A (ja) ウェハエッジリングの持ち上げに関する解決
JP6656153B2 (ja) より小さいウエハおよびウエハ片向けのウエハキャリア
CN103426831B (zh) 电化学处理器中的密封环
JP2017216441A5 (enExample)
JP2005064460A5 (enExample)
JP2014065959A (ja) 蒸着装置、および、蒸着装置における基板設置方法
JP5036614B2 (ja) 基板用ステージ
JP2017501572A5 (enExample)
CN103367215B (zh) 一种等离子刻蚀设备的基片定位升降装置
JP2019536290A (ja) プロセスチャンバキャリアのための静電チャッキング力測定ツール
TW201608671A (zh) 基板傳送機械手端效器
TWI681496B (zh) 減少製程腔室內基板滑動之設備及方法
JP2010529656A5 (enExample)
JP2016172881A5 (enExample)
JP2021502696A (ja) 両面処理のためのパターニングされたチャック
TWI717403B (zh) 晶圓舟皿、退火工具以及退火方法
JP2016111093A5 (enExample)
CN108350572A (zh) 大面积双基板处理系统
CN105789008B (zh) 等离子体处理装置及等离子体刻蚀方法
JP2014090038A (ja) 吸着部材
JP2009059864A (ja) 基板リフト装置
JP2013532370A (ja) ウェーハ支持リング