TWI681496B - 減少製程腔室內基板滑動之設備及方法 - Google Patents

減少製程腔室內基板滑動之設備及方法 Download PDF

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TWI681496B
TWI681496B TW104123113A TW104123113A TWI681496B TW I681496 B TWI681496 B TW I681496B TW 104123113 A TW104123113 A TW 104123113A TW 104123113 A TW104123113 A TW 104123113A TW I681496 B TWI681496 B TW I681496B
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substrate
substrate support
lifting mechanism
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connector
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希魯納弗卡羅蘇司瑞斯坎薩羅傑
沙芬戴亞基倫古莫
蔡振雄
劉開良
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美商應用材料股份有限公司
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Abstract

本文揭示用於處理基板的方法及設備。在某些實施例中，用於處理基板的設備包含：基板支撐件，基板支撐件具有基板支撐表面，基板支撐表面包含電絕緣塗層；基板升舉機構，基板升舉機構包含複數個升舉銷，該複數個升舉銷經配置以在第一位置與第二位置之間移動，第一位置設置於基板支撐表面下方，第二位置設置於基板支撐表面上方；及連接件，連接件經配置以在該複數個升舉銷抵達基板支撐表面之平面之前選擇性地提供基板支撐件與基板升舉機構之間的電性連接。

Description

減少製程腔室內基板滑動之設備及方法
本揭示案之實施例大致上關於基板處理系統，且更具體而言，關於用於處理具有背側氧化物層的基板的設備及方法。
在例如半導體晶圓的基板之處理中，基板放置於基板處理系統之製程腔室中的基板支撐件上。用於支撐基板的經常為支撐構件，例如加熱器基座，用以在實行製程期間將基板保持在適合的位置。通常，基板放置於支撐構件上且相對於支撐構件大致上位於中心，以使基板被均勻地處理。然後在基板上執行一或更多個製程，例如電漿製程或其他製程。在完成該一或更多個製程之後，然後舉例而言，藉由升舉銷(lift pin)，將基板從基板支撐件移除，升舉銷可在與基板支撐件之平面呈垂直的方向中移位。升舉銷相對於基板移動，以將基板舉起遠離基板支撐件，用以隨後將基板從製程腔室移除。
本發明人已觀察到，在某些製程中，當在製程完成之後嘗試將基板舉起時，基板可能不希望地在基板支撐件上移動。具體而言，本發明人已觀察到，一旦在某些製程完成之後嘗試將基板舉起時基板可能不希望地移 動，該等製程是在具有厚背側氧化物層(例如約10kÅ或更大的厚度)的基板上執行，該厚背側氧化物層設置於基板支撐件上且該背側氧化物層接觸該基板支撐件。
因此，本發明人已提供用於在製程腔室中處理基板的改善的方法及設備之實施例。
本文揭示用於處理基板的方法及設備。在某些實施例中，用於處理基板的設備包含：基板支撐件，基板支撐件具有基板支撐表面，基板支撐表面包含電絕緣塗層；基板升舉機構，基板升舉機構包含複數個升舉銷，該複數個升舉銷經配置以在第一位置與第二位置之間移動，第一位置設置於基板支撐表面下方，第二位置設置於基板支撐表面上方；及連接件，連接件經配置以在該複數個升舉銷抵達基板支撐表面之平面之前選擇性地提供基板支撐件與基板升舉機構之間的電性連接。
在某些實施例中，用於處理基板的設備包含基板支撐件，當在基板之第二表面上執行製程時，基板支撐件支撐且接觸基板之第一表面之至少一部分，當執行製程時基板支撐件為電性隔離的；當執行製程時基板升舉機構與基板分隔且隨後基板升舉機構接觸基板之第一表面；及連接件，在製程結束之後但在基板升舉機構接觸基板之第一表面之前的時間點，連接件提供基板支撐件與基板升舉機構之間的電性連接，使得基板之第一表面與基板升舉機構之間的電位差被移除。
在某些實施例中，用於處理基板的設備包含：製程腔室；設置於製程腔室內的基板支撐件，基板支撐件具有基板支撐表面，基板支撐表面包含電絕緣塗層；基板升舉機構，基板升舉機構包含複數個升舉銷，該複數個升舉銷經配置以在第一位置與第二位置之間移動，第一位置設置於基板支撐表面下方，第二位置設置於基板支撐表面上方；連接件，連接件經配置以在該複數個升舉銷抵達基板支撐表面之平面之前選擇性地提供基板支撐件與基板升舉機構之間的電性連接；及電漿功率源，用以在製程腔室內產生電漿。
在某些實施例中，用於處理基板的設備包含連接件，在基板之第二表面上執行的製程結束之後的時間點，連接件提供基板升舉機構與基板之第一表面之間的電性連接，其中當執行製程時基板之第一表面之至少一部分藉由基板支撐件所支撐且接觸基板支撐件，當執行製程時基板支撐件為電性隔離的，及當執行製程時基板升舉機構與基板分隔。
在某些實施例中，處理基板的方法包含以下步驟：在設置於基板支撐件上的基板上實行製程，其中當實行製程時基板支撐件為電性隔離的；在製程結束之後，電性耦合基板支撐件與基板升舉機構，以降低或移除基板支撐件與基板升舉機構之間的電位差；及接著使基板接觸基板升舉機構。
以下描述本揭示案之其他及進一步實施例。
100‧‧‧基板支撐件
102‧‧‧基板支撐件
103‧‧‧開口
104‧‧‧基板支撐表面
105‧‧‧基板升舉機構
106‧‧‧升舉銷
108‧‧‧箍環
120‧‧‧基板
122‧‧‧背側氧化物層
130‧‧‧接地片
200‧‧‧製程腔室
202‧‧‧基板支撐件
204‧‧‧腔室壁
206‧‧‧升舉銷
208‧‧‧箍環
210‧‧‧蓋組件
212‧‧‧直流(DC)電源
214‧‧‧磁極
220‧‧‧基板
222‧‧‧厚背側氧化物層
230‧‧‧接地片/連接件
300‧‧‧方法
302‧‧‧步驟
304‧‧‧步驟
306‧‧‧步驟
以上簡要總結且以下更詳細討論的本揭示案之實施例可參照附圖中描繪的本揭示案之說明性實施例而瞭解。然而，附圖僅繪示本揭示案之典型實施例且因此不應被視為限制範疇，因為本揭示案可容許其他同等有效實施例。
第1圖圖示根據本揭示案之某些實施例基板支撐件及基板升舉機構之實例。
第2A圖及第2B圖繪示根據本揭示案之某些實施例製程腔室之實例。
第3圖為繪示根據本揭示案之某些實施例的方法之實例的流程圖。
為了促進瞭解，已儘可能使用相同的元件符號來指稱圖式中共用的相同元件。圖式並未按比例繪製且可能為了清楚而簡化。一個實施例之元件及特徵在沒有進一步敘述的情況下可有益地併入其他實施例中。
本揭示案之實施例有關於有利地避免基板在基板支撐件上由於在完成處理之後基板升舉機構與基板之間的電壓差而移動的方法及設備。雖然並非限制本揭示案之範疇，本揭示案之實施例有用於在製程腔室中的製程(舉例而言，電漿製程)完成之後解決基板偏移之問題，基 板例如為具有厚背側氧化物層(舉例而言，具有約10kÅ或更厚的厚度的背側氧化物)的半導體晶圓。
本發明人已觀察到位於基板支撐件中心的基板在整個製程中及在製程剛完成時可維持於中心處。本發明人已進一步觀察到在電漿製程完成之後當升舉銷接觸基板時基板有時不希望地側向偏移，但在非電漿製程完成之後當藉由升舉銷碰觸時基板則不偏移。本發明人亦觀察到當薄背側氧化物晶圓經電漿處理後時則該偏移不發生。本發明人因此作以下結論，基板之厚背側氧化物層、電漿製程及與升舉銷接觸之組合導致基板之位置偏移。
更具體而言，本發明人相信，直流(DC)電漿之自偏壓(self-bias)提供電場，當在電漿製程期間施加至基板時，該電場造成厚背側氧化物層之介電質偏極化。亦即，正電荷在厚背側氧化物層內以朝向電場的方向移位，且負電荷在厚背側氧化物層內以遠離電場的方向移位。於電漿製程結束時厚背側氧化物層維持偏極化，因為接觸基板的基板支撐件之表面被電絕緣塗層所塗佈，例如DYLYN®類鑽石碳(diamond-like carbon；DLC)塗層或類似者。該等塗層可用以避免基板與基板支撐件之間的熱不匹配且降低基板應力。本發明人注意到，電絕緣塗層避免在厚背側氧化物層中累積的電荷經由基板支撐件散逸。雖然在厚背側氧化物層中累積的電荷可理論上藉由在升舉銷接觸基板之前等待經由基板中的微裂散逸，但所浪費的時間遠大於製造處理所期望的時間。
由於電荷累積，在完成製程之後電位差維持跨越厚背側氧化物層，當基板藉由升舉銷接觸時，該電位差導致基板靜電排斥且自中心位置滑開。
在某些實施例中，上述問題可藉由自基板支撐件之基板支撐表面移除電絕緣塗層來解決。舉例而言，基板支撐件之基板支撐表面可由塗層所塗佈，例如DYLYN®，以如上所述避免基板與基板支撐件之間的熱不匹配，且塗層自基板支撐表面移除。藉由自基板支撐表面移除電絕緣塗層，基板直接接觸基板支撐件，基板支撐件為導電體；使得任何累積在厚背側氧化物層之表面上的電荷散逸。作為另一個實例，基板支撐件之基板支撐表面可由上述DYLYN®塗層及鈦塗層兩者所塗佈，且這些塗層兩者皆自基板支撐件之基板支撐表面移除，此舉進一步降低厚背側氧化物層之表面上的電荷累積。
本發明人決定，當在設置於電絕緣塗層已被移除的基板支撐表面上的基板上實行電漿製程時，一旦基板接觸升舉銷，基板之滑動顯著降低。本發明人進一步決定，對於舉例而言半導體晶圓，在執行製程之後，自基板支撐件移除電絕緣塗層並未有害地顯著影響基板應力。
藉由在基板上製程完成之後但在升舉銷接觸基板之前的時間點以使基板支撐件及升舉銷之電位平衡且因此使厚背側氧化物層及升舉銷之電位平衡的方式併入連接件，例如接地迴圈(grounding loop)，本發明 人進一步解決製程後基板滑動的問題。藉由移除電位差，進一步降低一旦基板接觸升舉銷時的基板滑動。
第1圖繪示根據本揭示案之某些實施例基板支撐件之非限制實例100。基板支撐件102具有基板支撐表面104。在某些實施例中，基板支撐件還可包含加熱器110，例如電阻式加熱器。在某些實施例中，現存具有電絕緣塗層(例如上述的DYLYN®塗層)的基板支撐件可能移除了電絕緣塗層。基板120可具有介電背側塗層，例如厚(舉例而言，大於約10kÅ)背側氧化物層122，背側氧化物層122與基板支撐件102之基板支撐表面104接觸。
舉例而言，基板升舉機構105包含複數個升舉銷106，該等升舉銷中之各者於各自升舉銷之基底處皆附著至箍環(hoop ring)108。基板支撐件具有複數個對應的開口103，升舉銷106可進入開口103中。基板升舉機構105可在第一位置與第二位置之間移動，第一位置為當基板120設置於基板支撐件102上時遠離基板支撐件102及基板120所設置，第二位置為與基板120之第一表面接觸以和基板支撐件102分隔開的關係來支撐基板120(舉例而言，促使將基板傳送至基板傳送機器人或自基板傳送機器人傳送基板)。
連接件例如接地片(grounding strip)130舉例而言於基板支撐件102之底部處電性耦合，且藉由基板支撐件102與基板升舉機構105之相對移動，使在基板升舉機構105接觸基板120之第二表面之前接地片130 與基板升舉機構105之頂表面(舉例而言，箍環108)電性接觸。在另一個實例中，連接件於基板升舉機構105之頂表面(舉例而言，箍環108之頂表面)處電性耦合，且藉由基板支撐件與基板升舉機構之相對移動，使連接件與基板支撐件之底表面電性接觸。藉由提供基板支撐件與基板升舉機構之間的電性連接，當基板升舉機構接觸基板之第二表面時，連接件降低或移除基板支撐件與基板升舉機構之間的任何電位差，此舉使基板自基板支撐件之中心的任何滑動最小化。
在某些實施例中，接地片130可為可撓性構件，例如薄材料箍或材料環(例如，接地迴圈，舉例而言，形成環的可撓性金屬帶)。可撓性接地片130可例如藉由彈性形變而移動，以促使當移動基板升舉機構105之升舉銷以接觸基板及自基板支撐件102之基板支撐表面移除基板時基板支撐件102與基板升舉機構105相對於彼此的持續移動。
第2A圖及第2B圖圖示根據本揭示案之某些實施例具有基板支撐件202的製程腔室200之非限制實例。雖然以下所述的基板支撐件202是用於物理氣相沉積(PVD)製程腔室中，基板支撐件202可有利地用於其他當電漿處理或其他條件造成基板與基板支撐件之升舉銷之間的電位差時的製程腔室中。
基板支撐件202設置於製程腔室200之處理體積內且由導電材料所形成。連接件，例如接地片230， 舉例而言電性耦合於基板支撐件202之底部處。基板升舉機構舉例而言包含升舉銷206，升舉銷206中之各者於個別升舉銷之基底處附著至箍環208。除了以下所討論的細節之外，基板支撐件202、接地片230及基板升舉機構中之一或更多者可與以上關聯第1圖所述的基板支撐件102、接地片130及基板升舉機構105相似。
基板支撐件202及基板升舉機構各自含於腔室壁204內且位於蓋組件210下方。蓋組件210可包含待濺射沉積於設置在基板支撐件202上的基板上的靶材材料。在某些實施例中，電漿功率源，例如直流(DC)電源212提供功率以在製程腔室內自經由氣體供應(未圖示)所供應至腔室的一或更多種氣體產生電漿。在某些實施例中，電漿功率源經由蓋組件210耦接至靶材。磁極214用以將電漿約束於最靠近靶材處，以增強處理，例如利用之靶材均勻性、濺射率、靶材壽命及類似者。或者是或以組合方式，可使用射頻(RF)電源取代DC電源212，或RF電源與DC電源212一起使用，來提供功率以產生電漿。
第2A圖圖示在基板220之第一表面上的製程完成時的製程腔室200，基板220例如半導體晶圓，半導體晶圓之第二表面設置於基板支撐件202之基板支撐表面頂上且接觸基板支撐表面。基板220還包含，舉例而言，厚背側氧化物層222，作為實例，厚背側氧化物層222具有至少10kÅ的厚度。舉例而言，製程為電漿製程，例如物理氣相沉積(PVD)製程、化學氣相沉積(CVD)製 程、反應性離子蝕刻(RIE)或其他蝕刻製程，或其他電漿製程。
在基板220之第一表面上的製程完成之後，基板支撐件及基板升舉機構彼此相對移動，例如藉由基板支撐件向下平移或是基板升舉機構向上平移任一者，或是基板支撐件向下平移且基板升舉機構向上平移兩者。執行基板支撐件及基板升舉機構之相對移動以將基板從基板支撐件傳送至基板升舉機構，使得基板可傳送出製程腔室，例如藉由使用基板傳送機器人。
第2B圖圖示在使得連接件230與基板升舉機構電性接觸之後且在基板升舉機構已接觸基板之後第2A圖之製程腔室200之實例。如第2B圖中所示，發現基板實質上維持在基板支撐件之中心處。
第3圖繪示根據本揭示案之某些實施例處理基板之方法300之實例。可在具有與第1圖或第2A圖~第2B圖中所述的基板支撐件相似的基板支撐件的製程腔室中執行方法300，或可在其他適合的製程腔室及根據以上教示的基板支撐件中執行方法300。
方法300大致上於步驟302處開始，於該處當基板藉由基板支撐件所支撐時在基板上執行製程。當執行製程時，基板支撐件為電性隔離的。接著，於步驟304處，在製程結束之後，基板支撐件與基板升舉機構電性耦合，以降低或移除基板與基板升舉機構之間的任何電位差。舉例而言，基板支撐件或基板升舉機構中之至少一者相對於 基板支撐件或基板升舉機構中之至少另一者移動，直到使電性耦接至基板支撐件或基板升舉機構中之一者的連接件與基板支撐件或基板升舉機構中之另一者電性接觸。然後，於步驟306處，使基板與基板升舉機構接觸，例如藉由基板支撐件或基板升舉機構中之該至少一者之進一步相對移動，來將基板自基板支撐件舉離。
雖然前述是針對本揭示案之實施例，在不脫離本揭示案之基本範疇下，可設計本揭示案之其他及進一步實施例。
300‧‧‧方法
302‧‧‧步驟
304‧‧‧步驟
306‧‧‧步驟

Claims (20)

  1. 一種用於處理一基板的設備，包括：一基板支撐件，該基板支撐件具有一基板支撐表面，該基板支撐表面包含一電絕緣塗層；一基板升舉機構，該基板升舉機構包含複數個升舉銷，該複數個升舉銷經配置以在一第一位置與一第二位置之間移動，該第一位置設置於該基板支撐表面下方，該第二位置設置於該基板支撐表面上方；及一連接件，該連接件經配置以選擇性地提供該基板支撐件與該基板升舉機構之間的一電性連接，使得在該基板升舉機構自該第一位置移動至該第二位置時在該複數個升舉銷抵達該基板支撐表面之一平面之前提供該電性連接。
  2. 如請求項1所述之設備，其中該連接件電性耦合至該基板支撐件或該基板升舉機構中之一者，且該連接件可移動而與該基板支撐件或該基板升舉機構中之另一者電性接觸。
  3. 如請求項1所述之設備，其中該連接件耦接至該基板升舉機構且藉由該基板支撐件相對於該基板升舉機構之相對移動來移動而與該基板支撐件電性接觸。
  4. 如請求項1所述之設備，其中該基板升舉機 構包含一箍環，該箍環支撐且電性接觸該複數個升舉銷，且該連接件提供該基板支撐件與該箍環之間的一電性連接。
  5. 如請求項1所述之設備，其中該基板升舉機構可相對於該基板支撐件移動，且藉由該基板支撐件與該基板升舉機構彼此相對移動可使該基板升舉機構與設置於該基板支撐表面上的一基板接觸。
  6. 如請求項1至請求項5中任一項所述之設備，其中該連接件為一接地迴圈。
  7. 如請求項1至請求項5中任一項所述之設備，其中該基板支撐件包含一加熱器。
  8. 如請求項1至請求項5中任一項所述之設備，其中該基板支撐件包含一導電體，該導電體與該基板支撐表面於使得設置於該基板支撐表面上的一基板與該導電體電性接觸的一位置中電性接觸。
  9. 一種用於處理一基板的設備，包括：一製程腔室；一基板支撐件，該基板支撐件設置於該製程腔室內，該基板支撐件具有一基板支撐表面，該基板支撐表面包含一電絕緣塗層；一基板升舉機構，該基板升舉機構包含複數個升舉銷，該複數個升舉銷經配置以在一第一位置與一第二 位置之間移動，該第一位置設置於該基板支撐表面下方，該第二位置設置於該基板支撐表面上方；一連接件，該連接件經配置以選擇性地提供該基板支撐件與該基板升舉機構之間的一電性連接，使得在該基板升舉機構自該第一位置移動至該第二位置時在該複數個升舉銷抵達該基板支撐表面之一平面之前提供該電性連接；及一電漿功率源，用以在該製程腔室內產生一電漿。
  10. 如請求項9所述之設備，進一步包括：一靶材，該靶材包括待濺射沉積的材料；及一磁極，該磁極設置於最靠近該靶材處，以在處理期間將該電漿約束於最靠近該靶材處。
  11. 如請求項10所述之設備，其中該電漿功率源耦接至該靶材。
  12. 如請求項10所述之設備，其中該電漿功率源包括一直流電源或一射頻電源中之至少一者。
  13. 如請求項9至請求項12中任一項所述之設備，其中該製程腔室經配置以實行一物理氣相沉積(PVD)製程、一化學氣相沉積(CVD)製程或一蝕刻製程中之一或更多者。
  14. 一種處理一基板的方法，該方法包括以下步驟： 在設置於一基板支撐件上的一基板上實行一製程，其中當實行該製程時該基板支撐件為與一基板升舉機構電性隔離的；在該製程結束之後，電性耦合該基板支撐件與該基板升舉機構，以降低或移除該基板支撐件與該基板升舉機構之間的一電位差；及接著使該基板接觸該基板升舉機構。
  15. 如請求項14所述之方法，其中該製程包含一電漿製程。
  16. 如請求項14所述之方法，其中該製程為一物理氣相沉積(PVD)製程、一化學氣相沉積(CVD)製程或一蝕刻製程。
  17. 如請求項14至請求項16中任一項所述之方法，進一步包括以下步驟：在該基板上實行該製程之前，自該基板支撐件移除一電絕緣層，使得當實行該製程時該基板與該基板支撐件電性接觸。
  18. 如請求項14至請求項16中任一項所述之方法，其中一氧化物層設置於與該基板支撐件接觸的的該基板之一第一表面之至少部分上，使得當執行該製程時，電荷累積於該基板之該第一表面之該至少部分處。
  19. 如請求項18所述之方法，其中該氧化物層具有至少10kÅ的一厚度。
  20. 如請求項14至請求項16中任一項所述之方法，其中該基板為一半導體晶圓。
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