CN106489193A - 减少工艺腔室内基板滑动的设备及方法 - Google Patents

减少工艺腔室内基板滑动的设备及方法 Download PDF

Info

Publication number
CN106489193A
CN106489193A CN201580038105.9A CN201580038105A CN106489193A CN 106489193 A CN106489193 A CN 106489193A CN 201580038105 A CN201580038105 A CN 201580038105A CN 106489193 A CN106489193 A CN 106489193A
Authority
CN
China
Prior art keywords
substrate
elevating mechanism
substrate support
described substrate
support
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN201580038105.9A
Other languages
English (en)
Other versions
CN106489193B (zh
Inventor
斯里斯卡塔拉贾赫·西里纳瓦卡拉苏
希兰库玛·萨万戴亚
振雄·蔡
凯亮·刘
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of CN106489193A publication Critical patent/CN106489193A/zh
Application granted granted Critical
Publication of CN106489193B publication Critical patent/CN106489193B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32577—Electrical connecting means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H01L21/6833—Details of electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/332—Coating
    • H01J2237/3321—CVD [Chemical Vapor Deposition]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Analytical Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Physical Vapour Deposition (AREA)
  • Chemical Vapour Deposition (AREA)
  • Manufacturing Of Printed Wiring (AREA)

Abstract

本文揭示用于处理基板的方法及设备。在一些实施方式中，用于处理基板的设备包含：基板支撑件，基板支撑件具有基板支撑表面，基板支撑表面包含电绝缘涂层；基板升降机构，基板升降机构包含多个升降销，所述多个升降销被配置为在第一位置与第二位置之间移动，第一位置设置于基板支撑表面下方，第二位置设置于基板支撑表面上方；及连接件，连接件被配置为在所述多个升降销抵达基板支撑表面的平面之前选择性地提供基板支撑件与基板升降机构之间的电气连接。

Description

减少工艺腔室内基板滑动的设备及方法
技术领域
本揭示案的实施方式大体涉及基板处理系统，且更特定而言，涉及用于处理具有背侧氧化物层的基板的设备及方法。
背景技术
在处理诸如半导体晶片之类的基板时，基板放置于基板处理系统的工艺腔室中的基板支撑件上。用于支撑基板的经常为支撑构件，例如加热器基座，用以在实行工艺期间将基板保持在适合的位置。通常，基板放置于支撑构件上且相对于支撑构件大致上位于中心，以使基板被均匀地处理。然后在基板上执行一或更多个工艺，例如等离子体工艺或其他工艺。在完成所述一或更多个工艺之后，然后举例而言，使用升降销(lift pin)，将基板从基板支撑件移除，升降销可在与基板支撑件的平面呈垂直的方向中移位。升降销相对于基板移动，以将基板举起远离基板支撑件，用以随后将基板从工艺腔室移除。
本发明人已观察到，在一些工艺中，当在工艺完成之后尝试将基板举起时，基板可能不希望地在基板支撑件上移动。具体而言，本发明人已观察到，一旦在一些工艺完成之后尝试将基板举起时基板可能不希望地移动，这些工艺是在具有厚背侧氧化物层(例如约或更大的厚度)的基板上执行，所述厚背侧氧化物层设置于基板支撑件上且所述背侧氧化物层接触所述基板支撑件。
因此，本发明人已提供用于在工艺腔室中处理基板的改善的方法及设备的实施方式。
发明内容
本文揭示用于处理基板的方法及设备。在一些实施方式中，用于处理基板的设备包含：基板支撑件，所述基板支撑件具有基板支撑表面，所述基板支撑表面包含电绝缘涂层；基板升降机构，所述基板升降机构包含多个升降销，所述多个升降销被配置为在第一位置与第二位置之间移动，所述第一位置设置于基板支撑表面下方，第二位置设置于基板支撑表面上方；及连接件，所述连接件被配置为在所述多个升降销抵达基板支撑表面的平面之前选择性地提供基板支撑件与基板升降机构之间的电气连接。
在一些实施方式中，用于处理基板的设备包含：基板支撑件，当在基板的第二表面上执行工艺时，基板支撑件支撑且接触基板的第一表面的至少一部分，当执行工艺时基板支撑件为电气隔离的；基板升降机构，当执行工艺时基板升降机构与基板分隔且随后基板升降机构接触基板的第一表面；及连接件，在工艺结束之后但在基板升降机构接触基板的第一表面之前的时间点，所述连接件提供基板支撑件与基板升降机构之间的电气连接，使得基板的第一表面与基板升降机构之间的电位差被移除。
在一些实施方式中，用于处理基板的设备包含：工艺腔室；设置于工艺腔室内的基板支撑件，所述基板支撑件具有基板支撑表面，所述基板支撑表面包含电绝缘涂层；基板升降机构，所述基板升降机构包含多个升降销，所述多个升降销被配置为在第一位置与第二位置之间移动，所述第一位置设置于基板支撑表面下方，所述第二位置设置于基板支撑表面上方；连接件，所述连接件被配置为在所述多个升降销抵达基板支撑表面的平面之前选择性地提供基板支撑件与基板升降机构之间的电气连接；及等离子体功率源，用以在工艺腔室内产生等离子体。
在一些实施方式中，用于处理基板的设备包含：连接件，在基板的第二表面上执行的工艺结束之后的时间点，所述连接件提供基板升降机构与基板的第一表面之间的电气连接，其中当执行工艺时基板的第一表面的至少一部分由基板支撑件支撑且接触基板支撑件，当执行工艺时基板支撑件为电气隔离的，及当执行工艺时基板升降机构与基板分隔。
在一些实施方式中，处理基板的方法包含以下步骤：在设置于基板支撑件上的基板上实行工艺，其中当实行工艺时基板支撑件为电气隔离的；在工艺结束之后，电气耦合基板支撑件与基板升降机构，以降低或移除基板支撑件与基板升降机构之间的电位差；及接着使基板接触基板升降机构。
以下描述本揭示案的其他及进一步的实施方式。
附图说明
以上简要概述且以下更详细论述的本揭示案的实施方式可参照附图中描绘的本揭示案的说明性实施方式而了解。然而，附图仅绘示本揭示案的典型实施方式且因此不应被视为限制范围，因为本揭示案可容许其他同等有效的实施方式。
图1图示根据本揭示案的一些实施方式的基板支撑件及基板升降机构的实例。
图2A及图2B绘示根据本揭示案的一些实施方式的工艺腔室的实例。
图3为绘示根据本揭示案的一些实施方式的方法的实例的流程图。
为了促进了解，已尽可能使用相同的标号来表示附图中共用的相同元件。附图并未按比例绘制且可能为了清楚而简化。一个实施方式的元件及特征可有益地并入其他实施方式中而无需进一步叙述。
具体实施方式
本揭示案的实施方式涉及有利地避免基板在基板支撑件上由于在完成处理之后基板升降机构与基板之间的电压差而移动的方法及设备。虽然并非限制本揭示案的范围，本揭示案的实施方式有益于在工艺腔室中的工艺(举例而言，等离子体工艺)完成之后解决基板偏移的问题，基板例如为具有厚背侧氧化物层(举例而言，具有约或更厚的厚度的背侧氧化物)的半导体晶片。
本发明人已观察到位于基板支撑件中心的基板在整个工艺中及在工艺刚完成时可维持于中心处。本发明人已进一步观察到在等离子体工艺完成之后当升降销接触基板时基板有时不希望地横向偏移，但在非等离子体工艺完成之后当由升降销碰触时基板则不偏移。本发明人亦观察到当薄背侧氧化物晶片经等离子体处理后则所述偏移不发生。本发明人因此作以下结论，基板的厚背侧氧化物层、等离子体工艺及与升降销接触的组合导致基板的位置偏移。
更具体而言，本发明人相信，直流(DC)等离子体的自偏压(self-bias)提供电场，当在等离子体工艺期间施加至基板时，所述电场造成厚背侧氧化物层的电介质极化。亦即，正电荷在厚背侧氧化物层内以朝向电场的方向移位，且负电荷在厚背侧氧化物层内以与电场相反的方向移位。在等离子体工艺结束时厚背侧氧化物层保持极化，因为接触基板的基板支撑件的表面被电绝缘涂层涂布，例如类金刚石碳(diamond-like carbon；DLC)涂层或类似者。这些涂层可用以避免基板与基板支撑件之间的热不匹配且降低基板中的应力。本发明人注意到，电绝缘涂层阻止在厚背侧氧化物层中累积的电荷经由基板支撑件散逸。虽然在升降销接触基板之前在厚背侧氧化物层中累积的电荷可理论上通过等待而经由基板中的微裂缝散逸，但所浪费的时间远大于制造处理所期望的时间。
由于电荷累积，在完成工艺之后电位差维持跨越厚背侧氧化物层，当基板被升降销接触时，所述电位差导致基板静电排斥且自中心位置滑开。
在一些实施方式中，上述问题可通过从基板支撑件的基板支撑表面移除电绝缘涂层来解决。举例而言，基板支撑件的基板支撑表面可由涂层涂布，例如以如上所述避免基板与基板支撑件之间的热不匹配，而涂层从基板支撑表面被移除。通过从基板支撑表面移除电绝缘涂层，基板直接接触基板支撑件，基板支撑件为导体；使得任何累积在厚背侧氧化物层的表面上的电荷散逸。作为另一个实例，基板支撑件的基板支撑表面可由上述涂层及钛涂层两者涂布，且这些涂层皆从基板支撑件的基板支撑表面移除，此举进一步降低厚背侧氧化物层的表面上的电荷累积。
本发明人确定，在设置于移除了电绝缘涂层的基板支撑表面上的基板上实行等离子体工艺后，当基板接触升降销时，基板的滑动显著降低。本发明人进一步确定，对于例如半导体晶片，从基板支撑件移除电绝缘涂层并未有害地显著影响执行工艺之后的基板应力。
通过在基板上完成工艺之后但在升降销接触基板之前的时间点以使基板支撑件与升降销的电位相等且因此使厚背侧氧化物层与升降销的电位相等的方式并入连接件，例如接地回圈(grounding loop)，本发明人进一步解决工艺后基板滑动的问题。通过移除电位差，进一步降低基板接触升降销时基板的滑动。
图1绘示根据本揭示案的一些实施方式的基板支撑件的非限制实例100。基板支撑件102具有基板支撑表面104。在一些实施方式中，基板支撑件还可包含加热器110，例如电阻式加热器。在一些实施方式中，具有电绝缘涂层(例如上述的涂层)的现有基板支撑件可被移除电绝缘涂层。基板120可具有介电背侧涂层，例如厚(举例而言，大于约)背侧氧化物层122，背侧氧化物层122与基板支撑件102的基板支撑表面104接触。
举例而言，基板升降机构105包含多个升降销106，这些升降销中的每一个于各自升降销的基底处皆附接至箍环(hoop ring)108。基板支撑件具有多个对应的开口103，升降销106可进入开口103中。基板升降机构105可在第一位置与第二位置之间移动，第一位置为当基板120设置于基板支撑件102上时远离基板支撑件102及基板120而设置，第二位置为与基板120的第一表面接触以和基板支撑件102分隔开的关系来支撑基板120(举例而言，促使将基板传送至基板传送机器人或从基板传送机器人传送基板)。
连接件例如接地条(grounding strip)130举例而言电气耦接于基板支撑件102的底部处，且通过基板支撑件102与基板升降机构105的相对移动，在基板升降机构105接触基板120的第二表面之前使接地条130与基板升降机构105的顶表面(举例而言，箍环108)电气接触。在另一个实例中，连接件电气耦接于基板升降机构105的顶表面(举例而言，箍环108的顶表面)处，且通过基板支撑件与基板升降机构的相对移动，使连接件与基板支撑件的底表面电气接触。通过提供基板支撑件与基板升降机构之间的电气连接，连接件降低或移除基板支撑件与基板升降机构之间的任何电位差，当基板升降机构接触基板的第二表面时，此举最小化基板从基板支撑件的中心的任何滑动。
在一些实施方式中，接地条130可为柔性构件，例如薄材料箍或材料环(例如，接地回圈，举例而言，形成环的柔性金属带)。柔性接地条130可例如通过弹性变形而移动，以促进当移动基板升降机构105的升降销以接触基板及从基板支撑件102的基板支撑表面移除基板时基板支撑件102与基板升降机构105相对于彼此的持续移动。
图2A及图2B图示根据本揭示案的一些实施方式的具有基板支撑件202的工艺腔室200的非限制实例。虽然以下所述的基板支撑件202是用于物理气相沉积(PVD)工艺腔室中，但基板支撑件202可有利地用于其中等离子体处理或其他条件造成基板与基板支撑件的升降销之间的电位差的其他工艺腔室中。
基板支撑件202设置于工艺腔室200的处理容积内且由导电材料形成。连接件，例如接地条230，举例而言电气耦接于基板支撑件202的底部处。基板升降机构举例而言包含升降销206，升降销206中的每一个在各自的升降销的基底处附接至箍环208。除了以下所论述的细节之外，基板支撑件202、接地条230及基板升降机构中之一或更多可与以上结合图1所述的基板支撑件102、接地条130及基板升降机构105相似。
基板支撑件202及基板升降机构各自含于腔室壁204内且位于盖组件210下方。盖组件210可包含靶材，所述靶材的材料待溅射沉积于设置在基板支撑件202上的基板上。在一些实施方式中，等离子体功率源，例如直流(DC)电源212提供功率以在工艺腔室内由经由气源(未图示)而供应至腔室的一或更多种气体产生等离子体。在一些实施方式中，等离子体功率源通过盖组件210耦接至靶材。磁体214用以将等离子体约束于靠近靶材处，以增强处理，例如靶材利用均匀性、溅射速率、靶材寿命及类似者。替代地或以组合方式，可使用射频(RF)电源取代DC电源212，或RF电源与DC电源212一起使用，来提供功率以产生等离子体。
图2A图示在基板220的第一表面上的工艺完成时的工艺腔室200，基板220例如半导体晶片，半导体晶片的第二表面设置于基板支撑件202的基板支撑表面顶上且接触基板支撑表面。基板220还包含，举例而言，厚背侧氧化物层222，作为实例，厚背侧氧化物层222具有至少的厚度。举例而言，所述工艺为等离子体工艺，例如物理气相沉积(PVD)工艺、化学气相沉积(CVD)工艺、反应性离子蚀刻(RIE)或其他蚀刻工艺、或其他等离子体工艺。
在基板220的第一表面上的工艺完成之后，基板支撑件和基板升降机构相对于彼此移动，例如通过基板支撑件向下平移或是基板升降机构向上平移，或是基板支撑件向下平移且基板升降机构向上平移两者。执行基板支撑件与基板升降机构的相对移动以将基板从基板支撑件传送至基板升降机构，使得基板可例如通过使用基板传送机器人而传送出工艺腔室。
图2B图示在使得连接件230与基板升降机构电气接触之后且在基板升降机构已接触基板之后图2A的工艺腔室200的实例。如图2B中所示，发现基板实质上维持在基板支撑件的中心处。
图3绘示根据本揭示案的一些实施方式的处理基板的方法300的实例。可在具有与图1或图2A-2B中描述的基板支撑件相似的基板支撑件的工艺腔室中执行方法300，或可在具有根据以上教示的基板支撑件的其他适合的工艺腔室中执行方法300。
方法300通常于302处开始，于302处当基板由基板支撑件支撑时在基板上执行工艺。当执行工艺时，基板支撑件为电气隔离的。接着，于304处，在工艺结束之后，基板支撑件与基板升降机构电气耦合，以降低或移除基板与基板升降机构之间的任何电位差。举例而言，基板支撑件或基板升降机构中的至少之一相对于基板支撑件或基板升降机构中的至少另一个移动，直到使电气耦接至基板支撑件或基板升降机构中之一的连接件与基板支撑件或基板升降机构中的另一个电气接触。然后，于306处，例如通过基板支撑件或基板升降机构中的所述至少之一的进一步相对移动，使基板与基板升降机构接触，来将基板从基板支撑件举离。
虽然前述内容是针对本揭示案的实施方式，但在不背离本揭示案的基本范围下，可设计本揭示案的其他及进一步的实施方式。

Claims (15)

1.一种用于处理基板的设备，包括：
基板支撑件，所述基板支撑件具有基板支撑表面，所述基板支撑表面包含电绝缘涂层；
基板升降机构，所述基板升降机构包含多个升降销，所述多个升降销被配置为在第一位置与第二位置之间移动，所述第一位置设置于所述基板支撑表面下方，所述第二位置设置于所述基板支撑表面上方；及
连接件，所述连接件被配置为在所述多个升降销抵达所述基板支撑表面的平面之前选择性地提供所述基板支撑件与所述基板升降机构之间的电气连接。
2.如权利要求1所述的设备，其中所述连接件电气耦接至所述基板支撑件或所述基板升降机构中之一，且所述连接件能移动而与所述基板支撑件或所述基板升降机构中的另一个电气接触。
3.如权利要求1所述的设备，其中所述连接件耦接至所述基板升降机构且通过所述基板支撑件相对于所述基板升降机构的相对移动来移动而与所述基板支撑件电气接触。
4.如权利要求1所述的设备，其中所述基板升降机构包含箍环，所述箍环支撑且电气接触所述多个升降销，且所述连接件提供所述基板支撑件与所述箍环之间的电气连接。
5.如权利要求1所述的设备，其中所述基板升降机构能相对于所述基板支撑件移动，且通过所述基板支撑件与所述基板升降机构相对于彼此移动能使所述基板升降机构与设置于所述基板支撑表面上的基板接触。
6.如权利要求1至权利要求5中任一项所述的设备，其中所述连接件是接地回圈。
7.如权利要求1至权利要求5中任一项所述的设备，其中所述基板支撑件包含加热器。
8.如权利要求1至权利要求5中任一项所述的设备，其中所述基板支撑件包含导体，所述导体与所述基板支撑表面于一位置中电气接触，以使得设置于所述基板支撑表面上的基板与所述导体电气接触。
9.如权利要求1至权利要求5中任一项所述的设备，进一步包括：
工艺腔室，其中所述基板支撑件设置在所述工艺腔室内；和
等离子体功率源，所述等离子体功率源用以在所述工艺腔室内产生等离子体。
10.如权利要求9所述的设备，进一步包括：
靶材，所述靶材包括待溅射沉积的材料；及
磁体，所述磁体被设置为靠近所述靶材，以在处理期间将所述等离子体约束于靠近所述靶材处。
11.如权利要求10所述的设备，其中所述等离子体功率源耦接至所述靶材且包括直流电源或射频电源中的至少之一。
12.一种处理基板的方法，所述方法包括以下步骤：
在设置于基板支撑件上的基板上实行工艺，其中当实行所述工艺时所述基板支撑件为电气隔离的；
在所述工艺结束之后，电气耦合所述基板支撑件与基板升降机构，以降低或移除所述基板支撑件与所述基板升降机构之间的电位差；及
接着使所述基板接触所述基板升降机构。
13.如权利要求12所述的方法，其中氧化物层设置于所述基板的与所述基板支撑件接触的第一表面的至少部分上，使得当执行所述工艺时，电荷累积于所述基板的所述第一表面的所述至少部分处。
14.如权利要求12至权利要求13中任一项所述的方法，其中所述工艺包含等离子体工艺。
15.如权利要求12至权利要求13中任一项所述的方法，其中所述工艺为物理气相沉积(PVD)工艺、化学气相沉积(CVD)工艺或蚀刻工艺。
CN201580038105.9A 2014-07-19 2015-07-17 减少工艺腔室内基板滑动的设备及方法 Expired - Fee Related CN106489193B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201462026641P 2014-07-19 2014-07-19
US62/026,641 2014-07-19
US14/752,245 US9595464B2 (en) 2014-07-19 2015-06-26 Apparatus and method for reducing substrate sliding in process chambers
US14/752,245 2015-06-26
PCT/US2015/040913 WO2016014359A1 (en) 2014-07-19 2015-07-17 Apparatus and method for reducing substrate sliding in process chambers

Publications (2)

Publication Number Publication Date
CN106489193A true CN106489193A (zh) 2017-03-08
CN106489193B CN106489193B (zh) 2020-02-04

Family

ID=55075180

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201580038105.9A Expired - Fee Related CN106489193B (zh) 2014-07-19 2015-07-17 减少工艺腔室内基板滑动的设备及方法

Country Status (7)

Country Link
US (2) US9595464B2 (zh)
KR (1) KR102443138B1 (zh)
CN (1) CN106489193B (zh)
PH (1) PH12017500087A1 (zh)
SG (2) SG11201700051YA (zh)
TW (1) TWI681496B (zh)
WO (1) WO2016014359A1 (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114645256A (zh) * 2022-03-14 2022-06-21 苏州迈为科技股份有限公司 减少溅射镀膜损伤硅片衬底的装置及方法

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10510625B2 (en) * 2015-11-17 2019-12-17 Lam Research Corporation Systems and methods for controlling plasma instability in semiconductor fabrication
JP7170449B2 (ja) 2018-07-30 2022-11-14 東京エレクトロン株式会社 載置台機構、処理装置及び載置台機構の動作方法
CN110527967B (zh) * 2019-09-23 2020-09-11 上海陛通半导体能源科技股份有限公司 物理气相沉积设备

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5904779A (en) * 1996-12-19 1999-05-18 Lam Research Corporation Wafer electrical discharge control by wafer lifter system
US20020170498A1 (en) * 2001-05-18 2002-11-21 Lg. Philips Lcd Co., Ltd. Chemical vapor deposition apparatus
US20040223286A1 (en) * 2000-11-09 2004-11-11 Samsung Electronics Co., Ltd. Wafer stage including electrostatic chuck and method for dechucking wafer using the wafer stage
CN1907897A (zh) * 2005-08-02 2007-02-07 应用材料公司 衬底支撑的加热和冷却
CN101241841A (zh) * 2007-02-08 2008-08-13 应用材料股份有限公司 基片背部加工残渣的去除
CN102414338A (zh) * 2009-02-27 2012-04-11 应用材料公司 不破坏真空的从基座表面移除残留物的原位电浆清除技术

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06338463A (ja) * 1993-05-28 1994-12-06 Toshiba Corp 半導体製造装置
JP4347295B2 (ja) 2003-04-18 2009-10-21 株式会社日立国際電気 半導体製造装置および半導体装置の製造方法
US8004293B2 (en) * 2006-11-20 2011-08-23 Applied Materials, Inc. Plasma processing chamber with ground member integrity indicator and method for using the same
US7959735B2 (en) 2007-02-08 2011-06-14 Applied Materials, Inc. Susceptor with insulative inserts
KR101397124B1 (ko) 2007-02-28 2014-05-19 주성엔지니어링(주) 기판지지프레임 및 이를 포함하는 기판처리장치, 이를이용한 기판의 로딩 및 언로딩 방법
US8247030B2 (en) * 2008-03-07 2012-08-21 Tokyo Electron Limited Void-free copper filling of recessed features using a smooth non-agglomerated copper seed layer
WO2010150590A1 (ja) 2009-06-24 2010-12-29 キヤノンアネルバ株式会社 真空加熱冷却装置および磁気抵抗素子の製造方法
US8637794B2 (en) * 2009-10-21 2014-01-28 Lam Research Corporation Heating plate with planar heating zones for semiconductor processing

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5904779A (en) * 1996-12-19 1999-05-18 Lam Research Corporation Wafer electrical discharge control by wafer lifter system
US20040223286A1 (en) * 2000-11-09 2004-11-11 Samsung Electronics Co., Ltd. Wafer stage including electrostatic chuck and method for dechucking wafer using the wafer stage
US20020170498A1 (en) * 2001-05-18 2002-11-21 Lg. Philips Lcd Co., Ltd. Chemical vapor deposition apparatus
CN1907897A (zh) * 2005-08-02 2007-02-07 应用材料公司 衬底支撑的加热和冷却
CN101241841A (zh) * 2007-02-08 2008-08-13 应用材料股份有限公司 基片背部加工残渣的去除
CN102414338A (zh) * 2009-02-27 2012-04-11 应用材料公司 不破坏真空的从基座表面移除残留物的原位电浆清除技术

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114645256A (zh) * 2022-03-14 2022-06-21 苏州迈为科技股份有限公司 减少溅射镀膜损伤硅片衬底的装置及方法
CN114645256B (zh) * 2022-03-14 2023-09-15 苏州迈为科技股份有限公司 减少溅射镀膜损伤硅片衬底的装置及方法

Also Published As

Publication number Publication date
US20160020134A1 (en) 2016-01-21
PH12017500087A1 (en) 2017-05-22
US10262877B2 (en) 2019-04-16
KR102443138B1 (ko) 2022-09-13
US20170186631A1 (en) 2017-06-29
SG10201900483XA (en) 2019-02-27
SG11201700051YA (en) 2017-02-27
KR20170032436A (ko) 2017-03-22
CN106489193B (zh) 2020-02-04
US9595464B2 (en) 2017-03-14
TWI681496B (zh) 2020-01-01
WO2016014359A1 (en) 2016-01-28
TW201611181A (zh) 2016-03-16

Similar Documents

Publication Publication Date Title
CN112216590B (zh) 用于改善在晶片极端边缘的特征轮廓倾斜的边缘环组件
CN106489193A (zh) 减少工艺腔室内基板滑动的设备及方法
CN101707186B (zh) 基板载置台和基板处理装置
KR102242988B1 (ko) 플라즈마 처리장치
US9887117B2 (en) Electrostatic chuck and semiconductor-liquid crystal manufacturing apparatus
CN101730931B (zh) 用于衬底处理的边缘环装置
CN102915944B (zh) 基板交接方法
CN105122430B (zh) 用于等离子体蚀刻操作的基板支撑件
CN101901778B (zh) 静电吸附电极及其制造方法和基板处理装置
CN105723504A (zh) 具有减少的基板颗粒产生的基板支撑设备
CN110085546B (zh) 用于薄基板搬运的静电载体
CN112259457B (zh) 等离子体蚀刻方法、等离子体蚀刻装置和基板载置台
JP2016531438A5 (zh)
JP6967944B2 (ja) プラズマ処理装置
US20040107911A1 (en) Substrate support member for use in FPD manufacturing apparatus
CN111354672B (zh) 静电卡盘及等离子体加工装置
JP2012230900A (ja) 真空処理装置用の接地アセンブリ
KR20150101391A (ko) 정전척, 배치대, 플라즈마 처리 장치, 및 정전척의 제조방법
CN105702572B (zh) 等离子体蚀刻方法
CN116457931A (zh) 高温双极静电卡盘
CN111326391B (zh) 等离子体处理装置
TW201230889A (en) Plasma processing apparatus (2)
US10468221B2 (en) Shadow frame with sides having a varied profile for improved deposition uniformity
KR101855656B1 (ko) 기판처리장치
US20220068612A1 (en) Wafer support and equipment for thin-film deposition or pre-cleaning using the same

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20200204

Termination date: 20210717

CF01 Termination of patent right due to non-payment of annual fee