CN111417742B - 处理装置 - Google Patents

处理装置 Download PDF

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CN111417742B
CN111417742B CN201880074074.6A CN201880074074A CN111417742B CN 111417742 B CN111417742 B CN 111417742B CN 201880074074 A CN201880074074 A CN 201880074074A CN 111417742 B CN111417742 B CN 111417742B
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electrostatic chuck
substrate
electrode
conductive member
wafer
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CN111417742A (zh
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藤里敏章
石坂忠大
望月隆
鸟屋大辅
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Tokyo Electron Ltd
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Abstract

在未形成等离子体的气氛下对基板进行处理时，能够可靠性较高地对该基板进行吸附，在基板的面内进行均匀性较高的处理。构成具备以下构件的装置：直流电源(35)，其正极侧与静电卡盘(3)的电极(32)和导电构件(4)中的一者连接，负极侧与静电卡盘(3)的电极(32)和导电构件(4)中的另一者连接，用于在处理容器(11)内未形成等离子体的状态下向位于与基板(W)相接的处理位置的导电构件(4)和电极(32)之间施加电压，利用由此产生的静电吸附力使基板(W)吸附于静电卡盘(3)的电介质层(31)；以及处理气体供给部(28)，在使基板(W)吸附于电介质层(31)的状态下，向该基板(W)供给处理气体并进行处理。

Description

处理装置
技术领域
本发明涉及利用静电卡盘吸附基板并进行处理的处理装置的技术。
背景技术
在半导体装置的制造工序中，对作为基板的半导体晶圆(以下，记载为晶圆)进行基于CVD(Chemical Vapor Deposirion：化学气相沉积)、ALD(Atomic Layer Deposition：原子层沉积)的成膜。在利用在处理容器内的载置台设置的加热器将载置于该载置台的晶圆加热至预定的温度的状态下供给成膜气体，从而进行这些成膜处理。
在向上述的处理容器内输送晶圆时，有时在该晶圆形成翘曲。在将如此形成了翘曲的晶圆载置于上述的载置台的情况下，载置台的热量难以均等地传递至晶圆的面内的各部分。因此，可能会使翘曲进一步变大、在晶圆的面内温度不均匀，在晶圆的面内存在未达到预定的温度的部位，作为在该状态下供给成膜气体的结果，在晶圆的面内膜厚可能不均匀。
然而，在对基板进行等离子体处理的装置中，有时构成为：由静电卡盘构成载置台的表面部而静电吸附基板，防止由构成等离子体的离子的入射导致的该基板的温度上升。例如在专利文献1中记载有：在进行等离子体蚀刻时，利用按压机构将LCD玻璃基板的周端部按压于载置台并且利用静电卡盘进行吸附的装置。为了应对已述的晶圆的翘曲的问题，考虑到将该静电卡盘应用于成膜装置。例如在专利文献2中记载有：也可以在具备与专利文献1同样的按压机构的晶圆的成膜装置设置静电卡盘。
现有技术文献
专利文献
专利文献1：日本特开2004-55585号公报
专利文献2：日本特开2001-53030号公报
发明内容
发明要解决的问题
专利文献1所示的静电卡盘被称为单极静电卡盘，该单极静电卡盘作为用于使构成该静电卡盘的表面部的电介质极化并对基板进行吸附的电极(卡盘用电极)，仅具备被自直流电源施加正电压和负电压中的一者的电极。该单极静电卡盘将在处理容器内形成的等离子体作为导电路径而利用，以使得自上述的直流电源向基板施加正电压和负电压中的另一者。也就是说，在未形成等离子体的气氛下不发生上述的极化，无法对基板进行吸附。但是，有时上述的成膜处理在未形成等离子体的气氛下进行。
此外，对于静电卡盘，为了不需要形成上述的等离子体，公知有分别具备被自直流电源施加正电压的电极和被自直流电源施加负电压的电极作为卡盘用电极的被称为双极静电卡盘的静电卡盘。在上述的专利文献2中，由于在处理容器内未形成等离子体，因此考虑设置该双极静电卡盘。但是，在基于上述的CVD、ALD的成膜处理中，有可能供给至晶圆的表面的成膜气体经由晶圆的侧方蔓延至背面，在晶圆的背面和静电卡盘之间的间隙成膜。当在晶圆成膜金属膜的情况下，形成于该间隙的膜形成为电连接多个卡盘用电极的导电路径，从而有可能在晶圆的背面和静电卡盘之间不产生极化，无法使晶圆吸附于静电卡盘。在专利文献2未记载用于解決该问题的方法。
本发明是基于这样的状况而完成的，其目的在于提供以下技术，在未形成等离子体的气氛下对基板进行处理时，能够可靠性较高地对该基板进行吸附，在基板的面内进行均匀性较高的处理。
用于解决问题的方案
本发明的处理装置具备：静电卡盘，其设于形成真空气氛的处理容器内，该静电卡盘包含电极和覆盖该电极并且表面侧形成基板的吸附区域的电介质层；
导电构件，其设于所述电介质层的表面侧；
升降机构，其使所述静电卡盘相对于所述导电构件相对地升降，以使所述静电卡盘分别位于该导电构件与所述基板接触的处理位置和用于向所述静电卡盘输送基板的待机位置；
直流电源，其正极侧与所述电极和所述导电构件中的一者连接，负极侧与所述电极和所述导电构件中的另一者连接，用于利用向位于所述处理位置的导电构件和所述电极之间施加电压而产生的静电吸附力，在所述处理容器内未形成等离子体的状态下使所述基板吸附于所述电介质层；以及
处理气体供给部，在使所述基板吸附于所述电介质层的状态下，该处理气体供给部向该基板的表面供给处理气体并进行处理。
发明的效果
根据本发明，构成静电卡盘的电极和导电构件中的一者、另一者分别与直流电源的正极侧、负极侧连接，向静电卡盘的电极和导电构件之间施加电压。利用由此产生的静电吸附力，在使该基板吸附于静电卡盘的状态下供给处理气体并进行处理。根据这样的结构，能够在处理容器内未形成等离子体的状态下使基板可靠性较高地吸附于静电卡盘并进行处理。作为其结果，能够提高基板的面内的处理的均匀性。
附图说明
图1是作为本发明的处理装置的一例的成膜装置的纵剖侧视图。
图2是所述成膜装置的纵剖侧视图。
图3是构成所述成膜装置的压环的俯视图。
图4是表示构成所述成膜装置的载置台的静电卡盘的纵剖侧面的示意图。
图5是在所述成膜装置设置的载置台的纵剖侧视图。
图6是本发明的其他结构的成膜装置的纵剖侧视图。
具体实施方式
参照图1以及图2的纵剖侧视图对本发明的处理装置的一实施方式的成膜装置1进行说明。成膜装置1构成为，利用静电卡盘对例如由硅形成的圆形的基板即晶圆W进行吸附，并且在后述的压环与该晶圆W的周端部接触的状态下供给成膜气体而进行CVD。利用该CVD，在晶圆W的表面成膜作为金属膜的钌(Ru)膜。
成膜装置1具备处理容器11，在该处理容器11内未形成等离子体。处理容器11接地至GND(接地端)。图中的附图标记12为在处理容器11的侧壁开口的、晶圆W的输送口，利用闸阀13进行开闭。排气口14在处理容器11的底面开口，经由排气管15与真空泵16连接。图中的附图标记17为由夹设于排气管15的泵等构成的压力调整部，调整来自于排气口14的排气量，将处理容器11内调整为所期望的压力的真空气氛。
在处理容器11设有水平且圆形的晶圆W的载置台2。该载置台2的表面部(上表面部)由扁平的圆形的静电卡盘3构成。该静电卡盘3在发明要解决的问题栏中作为单极静电卡盘进行了叙述。静电卡盘3由作为电介质的主体部31和埋设于主体部31的电极32构成。为了如此埋设有电极32，在该电极32的上方以覆盖该电极32的方式设有电介质层30。此外，在电极32的下方、侧方也设有电介质层。
晶圆W以其中心与主体部31的中心重叠的方式载置于静电卡盘3的表面。如后述那样，为了对被载置的晶圆W的整个背面进行吸附，主体部31的直径形成得比晶圆W的直径大。
导电线33的一端与电极32连接，导电线33的另一端例如在载置台2的支柱21内向下方延伸而经由设于处理容器11的外侧的开关34与设于该处理容器11的外侧的直流电源35的正极侧连接。直流电源35的负极侧连接于接地端。
在静电卡盘3的上方侧(表面侧)设有作为环状构件的压环4。若也参照示出该压环4的上表面的图3继续说明，则压环4在内侧端部具有接触部42。接触部42位于比在静电卡盘3载置的晶圆W的周端稍微靠内侧的位置，俯视观察时沿着晶圆W的周端形成。该压环4利用接触部42与晶圆W的周端部接触，并且如后述那样起到用于使晶圆W吸附于静电卡盘3的导电路径的作用。为了如此作为导电路径而发挥功能，压环4由导电构件构成。
支柱43自压环4的周缘部朝向下方延伸。该支柱43设有例如3根，该支柱43以不妨碍晶圆W相对于静电卡盘3的交接的方式在压环4的周向上互相空开间隔地设置。支柱43的下端支承于处理容器11的底面。支柱43也与压环4同样地构成为导电路径。
如后述那样，静电卡盘3构成为能够升降。在处理容器11的内外在输送晶圆W的未图示的输送机构和静电卡盘3之间进行晶圆W的交接时，静电卡盘3以不妨碍该交接的方式位于图1所示的待机位置(输送位置)。在对载置于静电卡盘3的晶圆W进行处理时，静电卡盘3位于图2所示的处理位置。在位于该处理位置时，压环4的接触部42成为在晶圆W的整周上与该晶圆W的周端接触的状态。支柱43的下端部与处理容器11的底部连接并且与接地端连接。
然而，上述的静电卡盘3为约翰森-拉别克(Johnson Rahbek)型的静电卡盘，利用约翰森-拉别克力对晶圆W进行吸附。在静电卡盘3位于上述的处理位置时，上述的开关34接通，在静电卡盘3的电极32和压环4之间形成电位差，在电极32和压环4之间通电，作用静电卡盘3的约翰森-拉别克力，使晶圆W吸附于静电卡盘3。若具体叙述，则晶圆W和静电卡盘3的电极32互相作为电容器的相对电极而发挥功能，隔着电介质层30在整面的范围内极化，使晶圆W的整面吸附于静电卡盘3。另外，在图4中利用箭头概略地示出电极32和压环4间的电流的流动，并且示出晶圆W的背面的极性以及电介质层30的表面的极性。具体地说，为了得到约翰森-拉别克力的作用，主体部31构成为在静电卡盘3所使用的温度范围中，例如体积电阻率为1E9Ω·cm～1E11Ω·cm。
返回图1～图3继续进行说明。在载置台2中，在静电卡盘3的下部侧埋设有加热器22，利用该加热器22将静电卡盘3的表面加热至所期望的温度。此外，3根升降销23贯穿于以在静电卡盘3的表面开口的方式形成于载置台2的贯通孔24。图中的附图标记61为支承升降销23的水平板，图中的附图标记45为上端与水平板61连接的支承棒。支承棒45的下端向处理容器11的外侧延伸，与升降机构46连接。图中的附图标记47为在处理容器11的外部包围支承棒45的波纹管，设为确保处理容器11内的气密性。
此外，图中的附图标记25为在静电卡盘3的表面的中心部开口的气体喷出孔，经由设于载置台2以及支柱21的气体供给路径与气体供给源26连接。自气体供给源26供给并自气体喷出孔25喷出的气体为用于将由加热器22加热的静电卡盘3的热量向晶圆W传热的气体，例如为He(氦)气体。之后，有时将如此自气体喷出孔25喷出的He气体记载为传热气体。
此外，支承载置台2的支柱21经由在处理容器11的底面开口的贯通孔支承于在处理容器11的外侧设置的升降台63上。升降台63构成为利用升降机构64升降自如。也就是说，在该成膜装置1中，载置台2构成为升降自如。图中的附图标记65为波纹管，包围支承载置台2的支柱21的下端部，设为用于保持处理容器11内的气密性。
以与上述的载置台2相对的方式在处理容器11的顶部设有作为处理气体供给部的成膜气体供给部28，该成膜气体供给部28将成膜气体作为处理气体向处理容器11内供给。图中的附图标记29为成膜气体供给源，例如将包含羰基钌[Ru3(CO)12]的气体作为用于成膜Ru膜的成膜气体向成膜气体供给部28供给。
此外，成膜装置1具备控制部10。该控制部10由计算机构成，具备程序、存储器、CPU。在程序中编入有步骤组，以使得能够实施成膜装置1中的后述的一系列的动作。控制部10利用该程序向成膜装置1的各部分输出控制信号，控制该各部分的动作。具体地说，利用控制信号控制来自成膜气体供给源29、传热气体供给源26的各气体的供给、由压力调整部17进行的处理容器11内的压力的调整、由升降机构64进行的载置台2的升降、由升降机构46进行的升降销23的升降、由加热器22的发热量的调整进行的晶圆W的温度的调整、开关34的接通断开等各动作。上述的程序存储于例如光盘、硬盘、磁光盘、DVD等存储介质，并加载于控制部10。
晶圆W借助升降销23载置在位于图1所示的待机位置的静电卡盘3。静电卡盘3向图2所示的处理位置移动，压环4与晶圆W相接并且开关34接通，从而使晶圆W吸附于静电卡盘3。通过使晶圆W吸附于静电卡盘3，从而使热量从由加热器22加热的该静电卡盘3向晶圆W传导。此外，使传热气体自静电卡盘3的气体喷出孔25向晶圆W的背面喷出，在晶圆W的背面和静电卡盘3之间的微小间隙中流动。静电卡盘3的热量也经由该传热气体向晶圆W传导。如上述那样，使晶圆W的整个背面吸附于静电卡盘3，成为由传热气体充满的状态，因此，晶圆W的面内均匀性较高地被加热。作为其结果，能够在晶圆W的面内的各部分中使温度均匀性较好地升温。自成膜气体供给部28供给成膜气体，构成该成膜气体的羰基钌在晶圆W的表面由于热量而分解，在晶圆W表面形成Ru膜。
此外，该Ru膜的成膜处理在使处理容器11内的压力比较低的情况下进行。在这样成膜压力较低的工艺的情况下，载置台的热量难以传热至晶圆W。利用上述的成膜装置1的晶圆吸附、传热气体、压环的结构，具有能够更可靠地使晶圆W的温度达到所期望的温度来进行成膜这样的优点。然后，在Ru膜成为预定的膜厚时，分别停止来自成膜气体供给部28的成膜气体的供给以及来自气体喷出孔25的传热气体的喷出而结束成膜处理，晶圆W以与向处理容器11送入时所进行的步骤相反的步骤自处理容器11内送出。
根据该成膜装置1，载置晶圆W的背面的静电卡盘3、构成与晶圆W的周端部的表面侧抵接的压环4的电极32分别与直流电源35的正极、负极连接。然后，利用向这些电极32、压环4间施加电压而产生的静电吸附力，在未形成等离子体的气氛下使晶圆W吸附于该静电卡盘3。由此，以提高晶圆W的面内的温度的均匀性的方式进行加热，因此，在该面内以均匀性较高的膜厚成膜Ru膜。作为其结果，能够谋求由晶圆W制造的半导体产品的成品率的提高。
然而，作为在处理晶圆W时的压环4的处理位置，只要是与晶圆W接触的位置即可，也可以是接触且按压的位置。通过位于按压晶圆W的位置，从而晶圆W的周端部利用该按压力和静电卡盘3的吸附作用可靠地与该静电卡盘3接触，从由加热器22加热的静电卡盘3向晶圆W的周端部传热。也就是说，能够更可靠地防止晶圆W的周端部自静电卡盘3浮起，抑制该周端部的温度的降低。
图5示出流路53的一端在压环4的下方且静电卡盘3的周端部上开口的例子。流路53的另一端与供给例如CO(一氧化碳)气体作为成膜抑制气体的CO气体供给源54连接。经由流路53向压环4的下方且静电卡盘3的周端部上供给的成膜抑制气体能够抑制晶圆W和压环4的接触部42接触的部位的成膜。
接着，参照图6以与成膜装置1之间的差异点为中心对作为成膜装置1的变形例的成膜装置6进行说明。支承压环4的支柱43的下端支承在以包围支承载置台2的支柱21的方式设置的水平的圆环状的下侧环构件44的外缘部上。该下侧环构件44的内缘部位于载置台2的周缘部的下方。下侧环构件44也构成为导电路径。此外，下侧环构件44经由支承棒45与升降机构46连接。升降销23支承于下侧环构件44来代替支承于支承板61。因而，利用升降机构46使压环4和升降销23一起升降。
压环4在图中以实线示出的位置和以点划线示出的位置之间升降。以该实线示出的位置为压环4与晶圆W接触且使晶圆W吸附于静电卡盘3的位置，从压环4观察时，静电卡盘3位于在成膜装置1的说明中所述的处理位置。以上述的点划线示出的位置为在输送机构和升降销23之间进行晶圆W的交接时的压环4的位置，从压环4观察时，静电卡盘3位于已述的待机位置。如该成膜装置1、6所示，只要静电卡盘3相对于压环4相对地升降即可，静电卡盘3和压环4中的任一者也可以进行升降。另外，对于压环4，只要与直流电源34以及接地端电连接即可，作为用于进行该连接的导电路径，不限于由支柱43、下侧环构件44构成。
然而，作为利用成膜装置1由成膜气体成膜的膜不限于Ru，也能够使用于成膜其他的具有导电性的导电膜的情况。该导电膜为除了绝缘膜以外的膜，包含金属膜。具体地说，能够成膜例如Cu(铜)、Ti(钛)、W(钨)、Al(铝)等金属膜。而且，作为导电膜包含Si(硅)等的半导体膜、碳等具有导电性的膜。此外，作为成膜装置，只要在未形成等离子体的气氛下通过将成膜气体向基板供给而在该基板进行成膜即可。因而，不限于利用CVD进行成膜的装置，也可以构成为向处理容器11内交替重复地供给原料气体和与原料气体反应的反应气体并利用ALD在基板进行成膜的装置。具体地说，例如也可以构成为供给作为原料气体的TiCl4(四氯化钛)气体、作为反应气体的NH3(氨)气体并利用ALD形成TiN(氮化钛)膜的成膜装置。另外，成膜装置1如上述那样吸附晶圆W的整个背面，传热气体在晶圆W的整个背面的下方流动。因而，导电膜难以形成于晶圆W的背面，抑制由于该导电膜的成膜而晶圆W的吸附力消失，因此，当在晶圆W的表面成膜上述的导电膜时特别有效。不过，当在晶圆W成膜SiO2(氧化硅)等绝缘膜的情况下也能够应用成膜装置1。此外，本技术的处理装置不限于构成为成膜装置，例如也可以构成为向晶圆W供给蚀刻气体作为处理气体并进行蚀刻的蚀刻装置。此外，在上述的例中，将设于静电卡盘3的表面侧的导电构件作为压环4即环状构件，但对于导电构件，只要是能够如上述那样在未形成等离子体的气氛下与晶圆W接触并产生静电吸附力的结构即可。也就是说，导电构件能够设为任意的形状，不限于设为环状。
此外，对于静电卡盘3，只要压环4和静电卡盘3的电极32之间形成电位差并通电即可，因而，直流电源35的正极以及负极未与接地端连接的情况也包含于本发明的保护范围。另外，本发明不限定以上所述的结构例，能够适宜地变更、组合上述的各实施方式。
附图标记说明
W、晶圆；1、成膜装置；10、控制部；11、处理容器；2、载置台；28、成膜气体供给部；3、静电卡盘；31、电极；32、主体部；35、直流电源；4、压环。

Claims (7)

1.一种处理装置，其中，
该处理装置具备：
静电卡盘，其设于形成真空气氛的处理容器内，该静电卡盘包含电极和覆盖该电极并且表面侧形成基板的吸附区域的电介质层；
导电构件，其设于所述电介质层的表面侧；
升降机构，其使所述静电卡盘相对于所述导电构件相对地升降，以使所述静电卡盘分别位于该导电构件与所述基板接触的处理位置和用于向所述静电卡盘输送基板的待机位置；
直流电源，其正极侧与所述电极和所述导电构件中的一者连接，负极侧与所述电极和所述导电构件中的另一者连接，用于利用向位于所述处理位置的导电构件和所述电极之间施加电压而产生的静电吸附力，在所述处理容器内未形成等离子体的状态下使与所述静电卡盘的所述电极互相作为电容器的相对电极而发挥功能的所述基板吸附于所述电介质层；以及
处理气体供给部，在使所述基板吸附于所述电介质层的状态下，该处理气体供给部向该基板的表面供给处理气体并进行处理。
2.根据权利要求1所述的处理装置，其中，
所述导电构件为内缘部沿着所述基板的周端部形成的环状构件。
3.根据权利要求1所述的处理装置，其中，
所述处理气体为用于在所述基板成膜的成膜气体。
4.根据权利要求3所述的处理装置，其中，
所述成膜气体为用于在所述基板成膜导电膜的气体。
5.根据权利要求1所述的处理装置，其中，
所述处理位置为利用所述导电构件使所述基板的周端部接触且按压于所述静电卡盘的位置。
6.根据权利要求1所述的处理装置，其中，
作为所述电极，仅具备与所述直流电源的正极侧和负极侧中的任一者连接的电极。
7.根据权利要求3所述的处理装置，其中，
为了抑制所述导电构件和所述基板之间的成膜，在导电构件的下方且静电卡盘的周端部上设有用于供给成膜抑制气体的气体喷出部。
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