JP2016062940A - 発光ユニット及び半導体発光装置 - Google Patents
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
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- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
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Abstract
Description
図2(a)は、実施形態の実装基板70の模式平面図である。
図2(b)は、実施形態の半導体発光装置1の模式平面図である。
図3は、実施形態の半導体発光装置1の模式断面図である。
図1は、図2(b)に示す半導体発光装置1の実装面を、図2(a)に示す実装基板70のパッド81〜83に向けて、半導体発光装置1が実装基板70に実装された状態を表す。図1は、半導体発光装置1が実装基板70に実装された状態で半導体発光装置1の上面側(実装面の反対側)から見た模式平面図である。
図8(a)は、他の実施形態の実装基板70の模式平面図である。
図8(b)は、他の実施形態の半導体発光装置1の模式平面図である。
図10(a)は、さらに他の実施形態の実装基板70の模式平面図である。
図10(b)は、さらに他の実施形態の半導体発光装置1の模式平面図である。
図12は、半導体発光装置2の模式平面図である。図12は、半導体発光装置2の実装面を表し、図11に示す半導体発光装置2の下面図に対応する。
Claims (9)
- 第1パッドと、第2パッドと、前記第1パッドと前記第2パッドとの間に設けられた第3パッドと、を有する実装基板と、
それぞれが2つの外部端子を有する複数の発光素子と、前記複数の発光素子を一体に支持する樹脂層と、を有する半導体発光装置と、
を備え、
前記複数の発光素子は第1方向に並んだn(nは2以上の整数)個の発光素子を含み、
前記n個の発光素子の(2×n)個の前記外部端子は前記第1方向に並び、
前記(2×n)個の外部端子のうち、前記第1方向の一方の端の外部端子は前記第1パッドに接合され、前記第1方向の他方の端の外部端子は前記第2パッドに接合され、前記一方の端の外部端子と前記他方の端の外部端子との間の外部端子は前記第3パッドに接合されている発光ユニット。 - それぞれの前記発光素子は第1電極および第2電極を有し、
前記n個の発光素子の前記(2×n)個の外部端子は、前記第1電極に接続されたn個の第1外部端子と、前記第2電極に接続されたn個の第2外部端子とを有し、
前記第1外部端子と前記第2外部端は前記第1方向に交互に並んでいる請求項1記載の発光ユニット。 - 前記第1方向で隣り合う2つの発光素子のうち一方の発光素子の前記第1外部端子と、他方の発光素子の前記第2外部端子とが、共通の前記第3パッドに接合されている請求項2記載の発光ユニット。
- 前記第1方向に並んだ前記n個の発光素子のグループが、前記第1方向に対して直交する第2方向に複数並んでいる請求項1〜3のいずれか1つに記載の発光ユニット。
- 前記第3パッドの面積は、前記第1パッドの面積及び前記第2パッドの面積よりも大きい請求項1〜4のいずれか1つに記載の発光ユニット。
- 前記半導体発光装置は、
蛍光体層と、
前記蛍光体層と前記外部端子との間に設けられ、発光層を有する半導体層と、
を有する請求項1〜5のいずれか1つに記載の発光ユニット。 - それぞれが第1電極および第2電極を有し、第1方向に並んだ複数の発光素子と、
前記複数の発光素子を一体に支持する樹脂層と、
前記複数の発光素子のうち前記第1方向の一方の端の発光素子の前記第1電極と接続された第1外部端子と、
前記複数の発光素子のうち前記第1方向の他方の端の発光素子の前記第2電極と接続された第2外部端子と、
前記第1外部端子と前記第2外部端子との間に設けられ、前記第1方向で隣り合う複数の発光素子に共通に設けられた第3外部端子と、
を備えた半導体発光装置。 - 前記第3外部端子の面積は、前記第1外部端子の面積および前記第2外部端子の面積よりも大きい請求項7記載の半導体発光装置。
- 蛍光体層と、
前記蛍光体層と前記第1電極との間、および前記蛍光体層と前記第2電極との間に設けられ、発光層を有する半導体層と、
をさらに備えた請求項7または8に記載の半導体発光装置。
Priority Applications (5)
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JP2014187250A JP6295171B2 (ja) | 2014-09-16 | 2014-09-16 | 発光ユニット及び半導体発光装置 |
US14/634,886 US9293663B1 (en) | 2014-09-16 | 2015-03-01 | Light-emitting unit and semiconductor light-emitting device |
CN201510093436.4A CN105990495B (zh) | 2014-09-16 | 2015-03-02 | 发光单元及半导体发光装置 |
CN201910188129.2A CN110085723B (zh) | 2014-09-16 | 2015-03-02 | 发光单元及半导体发光装置 |
TW104106904A TWI570962B (zh) | 2014-09-16 | 2015-03-04 | A light emitting unit and a semiconductor light emitting device |
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JP2014187250A JP6295171B2 (ja) | 2014-09-16 | 2014-09-16 | 発光ユニット及び半導体発光装置 |
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JP2018026889A Division JP6633111B2 (ja) | 2018-02-19 | 2018-02-19 | 発光ユニット及び半導体発光装置 |
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US (1) | US9293663B1 (ja) |
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Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10559724B2 (en) | 2016-10-19 | 2020-02-11 | Nichia Corporation | Light emitting device and method of manufacturing same |
US10910536B2 (en) | 2018-02-27 | 2021-02-02 | Nichia Corporation | Light emitting element |
JP2021176189A (ja) * | 2020-04-28 | 2021-11-04 | 日亜化学工業株式会社 | 発光装置 |
US11322541B2 (en) | 2019-08-28 | 2022-05-03 | Nichia Corporation | Light-emitting device |
JP7389331B2 (ja) | 2019-10-31 | 2023-11-30 | 日亜化学工業株式会社 | 発光デバイスの製造方法 |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102430500B1 (ko) * | 2017-05-30 | 2022-08-08 | 삼성전자주식회사 | 반도체 발광소자 및 이를 이용한 led 모듈 |
TWI635605B (zh) * | 2017-11-02 | 2018-09-11 | 錼創顯示科技股份有限公司 | 微型發光二極體顯示面板 |
US10643980B2 (en) * | 2018-01-23 | 2020-05-05 | Epistar Corporation | Light-emitting device, manufacturing method thereof and display module using the same |
CN110707198A (zh) * | 2019-09-20 | 2020-01-17 | 深圳市华星光电半导体显示技术有限公司 | 阵列基板及其制备方法 |
EP4194104A4 (en) | 2020-08-04 | 2024-05-29 | Toshiba Kk | APPLICATION DEVICE AND APPLICATION METHOD |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010141176A (ja) * | 2008-12-12 | 2010-06-24 | Toshiba Corp | 発光装置及びその製造方法 |
JP2011249501A (ja) * | 2010-05-26 | 2011-12-08 | Toshiba Corp | 発光装置 |
JP2011253999A (ja) * | 2010-06-03 | 2011-12-15 | Toshiba Corp | 半導体発光装置 |
JP2013038212A (ja) * | 2011-08-08 | 2013-02-21 | Toshiba Corp | 半導体発光装置及び発光モジュール |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4139634B2 (ja) | 2002-06-28 | 2008-08-27 | 松下電器産業株式会社 | Led照明装置およびその製造方法 |
JP2004039938A (ja) * | 2002-07-05 | 2004-02-05 | Sony Corp | チップ状電子部品、その実装構造、その中間基板、及びこれらの製造方法、並びにチップ状電子部品の検査方法 |
US7221044B2 (en) * | 2005-01-21 | 2007-05-22 | Ac Led Lighting, L.L.C. | Heterogeneous integrated high voltage DC/AC light emitter |
JP4795293B2 (ja) * | 2007-03-30 | 2011-10-19 | ローム株式会社 | 半導体発光装置 |
CN101452979A (zh) * | 2007-12-04 | 2009-06-10 | 亿光电子工业股份有限公司 | 发光器件的封装结构及其制造方法 |
JP5464825B2 (ja) * | 2008-07-23 | 2014-04-09 | ローム株式会社 | Ledモジュール |
CN101621105B (zh) * | 2009-07-30 | 2011-08-17 | 宁波晶科光电有限公司 | Led倒装芯片集成封装方法及采用该方法封装的led |
JP2011071272A (ja) | 2009-09-25 | 2011-04-07 | Toshiba Corp | 半導体発光装置及びその製造方法 |
JP5842813B2 (ja) * | 2010-04-16 | 2016-01-13 | 日亜化学工業株式会社 | 発光装置および発光装置の製造方法 |
JP5266290B2 (ja) | 2010-10-06 | 2013-08-21 | ラピスセミコンダクタ株式会社 | 半導体装置の製造方法 |
JP5568451B2 (ja) | 2010-11-26 | 2014-08-06 | 株式会社フジクラ | 半導体パッケージ |
JP2012195435A (ja) * | 2011-03-16 | 2012-10-11 | Stanley Electric Co Ltd | 半導体発光素子の製造方法 |
JP5770006B2 (ja) * | 2011-04-15 | 2015-08-26 | シチズン電子株式会社 | 半導体発光装置 |
CN102881799A (zh) * | 2011-07-11 | 2013-01-16 | 郭文平 | 一种高压led芯片及制作方法 |
JP6176817B2 (ja) * | 2011-10-17 | 2017-08-09 | ローム株式会社 | チップダイオードおよびダイオードパッケージ |
CN202930422U (zh) * | 2012-11-05 | 2013-05-08 | 金木子 | 倒装结构的led高压芯片 |
JP6306308B2 (ja) | 2013-09-19 | 2018-04-04 | 株式会社東芝 | 半導体発光装置 |
CN204257706U (zh) * | 2014-10-29 | 2015-04-08 | 王文娟 | 一种led光源封装结构 |
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Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010141176A (ja) * | 2008-12-12 | 2010-06-24 | Toshiba Corp | 発光装置及びその製造方法 |
JP2011249501A (ja) * | 2010-05-26 | 2011-12-08 | Toshiba Corp | 発光装置 |
JP2011253999A (ja) * | 2010-06-03 | 2011-12-15 | Toshiba Corp | 半導体発光装置 |
JP2013038212A (ja) * | 2011-08-08 | 2013-02-21 | Toshiba Corp | 半導体発光装置及び発光モジュール |
US20140175471A1 (en) * | 2011-08-08 | 2014-06-26 | Kabushiki Kaisha Toshiba | Semiconductor light emitting device and light emitting module |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10559724B2 (en) | 2016-10-19 | 2020-02-11 | Nichia Corporation | Light emitting device and method of manufacturing same |
US10896998B2 (en) | 2016-10-19 | 2021-01-19 | Nichia Corporation | Method of manufacturing light emitting device |
US11322664B2 (en) | 2016-10-19 | 2022-05-03 | Nichia Corporation | Method of manufacturing light emitting device |
US10910536B2 (en) | 2018-02-27 | 2021-02-02 | Nichia Corporation | Light emitting element |
US11322541B2 (en) | 2019-08-28 | 2022-05-03 | Nichia Corporation | Light-emitting device |
JP7389331B2 (ja) | 2019-10-31 | 2023-11-30 | 日亜化学工業株式会社 | 発光デバイスの製造方法 |
JP2021176189A (ja) * | 2020-04-28 | 2021-11-04 | 日亜化学工業株式会社 | 発光装置 |
JP7114854B2 (ja) | 2020-04-28 | 2022-08-09 | 日亜化学工業株式会社 | 発光装置 |
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CN110085723B (zh) | 2022-10-21 |
TW201613142A (en) | 2016-04-01 |
US9293663B1 (en) | 2016-03-22 |
CN105990495B (zh) | 2019-04-05 |
JP6295171B2 (ja) | 2018-03-14 |
CN110085723A (zh) | 2019-08-02 |
TWI570962B (zh) | 2017-02-11 |
CN105990495A (zh) | 2016-10-05 |
US20160079483A1 (en) | 2016-03-17 |
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