JP2016006854A - 半導体素子およびその製造方法 - Google Patents
半導体素子およびその製造方法 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 332
- 238000004519 manufacturing process Methods 0.000 title description 23
- 229910010271 silicon carbide Inorganic materials 0.000 claims abstract description 210
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims abstract description 201
- 239000000758 substrate Substances 0.000 claims abstract description 65
- 210000000746 body region Anatomy 0.000 claims description 125
- 230000004888 barrier function Effects 0.000 claims description 44
- 229910052751 metal Inorganic materials 0.000 claims description 42
- 239000002184 metal Substances 0.000 claims description 42
- 239000012535 impurity Substances 0.000 claims description 39
- 239000007769 metal material Substances 0.000 claims description 2
- 230000015556 catabolic process Effects 0.000 abstract description 10
- 239000012212 insulator Substances 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 293
- 239000011229 interlayer Substances 0.000 description 32
- 238000000034 method Methods 0.000 description 29
- 230000004048 modification Effects 0.000 description 29
- 238000012986 modification Methods 0.000 description 29
- 238000002513 implantation Methods 0.000 description 20
- 230000008569 process Effects 0.000 description 19
- 238000002347 injection Methods 0.000 description 8
- 239000007924 injection Substances 0.000 description 8
- 238000005468 ion implantation Methods 0.000 description 8
- 230000003647 oxidation Effects 0.000 description 8
- 238000007254 oxidation reaction Methods 0.000 description 8
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 6
- 238000000137 annealing Methods 0.000 description 5
- 230000005669 field effect Effects 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- 150000002500 ions Chemical class 0.000 description 5
- 229920002120 photoresistant polymer Polymers 0.000 description 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 4
- 230000004913 activation Effects 0.000 description 4
- 230000002093 peripheral effect Effects 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 230000005684 electric field Effects 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 230000002040 relaxant effect Effects 0.000 description 2
- 229910021332 silicide Inorganic materials 0.000 description 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 2
- 239000002344 surface layer Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
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Abstract
Description
以下、本開示による実施の形態1の半導体素子を説明する。ここでは、ダイオード内蔵SiC−MISFETを例に説明するが、本実施形態の半導体素子は、ダイオードと電界効果トランジスタとが1つの素子内に、同一の炭化珪素半導体層を用いて形成された素子であればよい。
図11を参照しながら、本実施形態の半導体素子の変形例を説明する。
図13を参照しながら、本実施形態の半導体素子の他の変形例を説明する。
図14を参照しながら、本実施形態の半導体素子のさらに他の変形例を説明する。
図15は、本実施形態のさらに他の変形例の半導体素子1004を示す断面図である。図16(a)は、半導体素子1004における上部配線層112およびゲート配線層114の配置を説明するための上面図である。図16(b)は、半導体素子1004において、上部配線層112およびゲート配線層114の下方に形成された各領域の配置を説明するための上面図である。
図19は、本実施形態のさらに他の変形例の半導体素子1005を示す断面図である。
100T トランジスタ領域
100S ショットキー領域
100G 境界領域
100E 終端領域
101 基板
102 第1炭化珪素半導体層(ドリフト層)
102d ドリフト領域
103 ボディ領域
103r ガードリング領域
103d、103gr 第2ボディ領域
104 ソース領域
105 コンタクト領域
106 第2炭化珪素半導体層(チャネル層)
107 ゲート絶縁膜
108 ゲート電極
109 ソース電極
109a 第1電極
110 ドレイン電極
111 層間絶縁膜
112 上部配線層
112S 上部電極
113 裏面電極
114 ゲート配線層
114P ゲートパッド
114L ゲート配線
115 バリア金属層
151 ショットキー電極
Claims (9)
- 表面および裏面を有する基板と、前記基板の前記表面上に配置された第1導電型の第1炭化珪素半導体層とを備える半導体素子であって、
複数のトランジスタセルを含むトランジスタ領域と、ショットキー領域と、前記基板の前記表面の法線方向から見て、前記トランジスタ領域と前記ショットキー領域との間に位置する境界領域とを有し、
前記複数のトランジスタセルのそれぞれは、
前記第1炭化珪素半導体層の表面の少なくとも一部に位置する第2導電型のボディ領域と、
前記ボディ領域に接して配置された第1導電型のソース領域と、
少なくとも前記ボディ領域の一部を覆うゲート絶縁膜と、
前記ゲート絶縁膜上に配置されたゲート電極と、
前記ソース領域と電気的に接続されたソース電極と、
前記基板の前記裏面に配置されたドレイン電極と
を備え、
前記境界領域は、
前記第1炭化珪素半導体層の表面の少なくとも一部に位置する第2導電型の第2ボディ領域と、
前記第2ボディ領域上に絶縁膜を介して配置され、かつ、前記ゲート電極と電気的に接続されたゲート接続部と
を備え、
前記ショットキー領域は、
前記第1炭化珪素半導体層の表面の少なくとも一部に位置する、第2導電型のガードリング領域と、
前記ガードリング領域の一部および前記第1炭化珪素半導体層上に配置されたショットキー電極と
を備え、
前記半導体素子は、
前記第2ボディ領域と電気的に接続された第1電極と、
前記ソース電極および前記第1電極と、前記ショットキー電極とを並列接続する上部配線層と、
前記ゲート接続部と電気的に接続されたゲート配線およびゲートパッドと
をさらに備え、
前記ゲート配線の少なくとも一部および前記ゲートパッドの少なくとも一部は、前記境界領域に配置されており、
前記基板の前記表面の法線方向から見て、前記トランジスタ領域、前記ショットキー領域および前記境界領域よりも外側に配置された終端領域をさらに有し、
前記終端領域は、前記第1炭化珪素半導体層の表面に位置する少なくとも1つの第2導電型のリング領域を備え、
前記基板の前記表面の法線方向から見て、前記ショットキー領域は前記トランジスタ領域を包囲するように配置されており、
前記第2ボディ領域は、前記境界領域から前記ショットキー領域に延設され、前記ショットキー電極の一部の下に配置されている半導体素子。 - 前記少なくとも1つのリング領域は、前記第1炭化珪素半導体層の表面において、間隔を隔てて配置された複数のリング領域である、請求項1に記載の半導体素子。
- 前記上部配線層と前記ソース電極との間、前記上部配線層と前記第1電極との間、ならびに、前記ゲート配線および前記ゲートパッドと前記ゲート電極との間に配置されたバリア金属層をさらに備える、請求項1または2に記載の半導体素子。
- 前記バリア金属層および前記ショットキー電極は同一の金属材料からなる、請求項3に記載の半導体素子。
- 前記複数のトランジスタセルのそれぞれは、前記第1炭化珪素半導体層と前記ゲート絶縁膜との間に、第1導電型の第2炭化珪素半導体層をさらに有する、請求項1から4のいずれかに記載の半導体素子。
- 前記第2炭化珪素半導体層は、さらに、前記ショットキー電極と前記第1炭化珪素半導体層との間に配置されている、請求項5に記載の半導体素子。
- 前記第2炭化珪素半導体層のうち前記ショットキー電極との接触面における第1導電型の不純物濃度は、前記第2炭化珪素半導体層の厚さ方向における平均不純物濃度よりも小さい、請求項6に記載の半導体素子。
- 前記第2炭化珪素半導体層は、前記第1炭化珪素半導体層上にエピタキシャル成長により形成されている、請求項5から7のいずれかに記載の半導体素子。
- 前記ショットキー領域は、前記第1炭化珪素半導体層の表面の一部に、前記第2ボディ領域および前記ガードリング領域と間隔を空けて配置された少なくとも1つの第2導電型領域をさらに備え、
前記ショットキー電極は、前記少なくとも1つの第2導電型領域、および、前記第1炭化珪素半導体層における第1導電型の領域の両方と接する、請求項1から8のいずれかに記載の半導体素子。
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