JP2017168677A - 炭化珪素半導体装置および炭化珪素半導体装置の製造方法 - Google Patents
炭化珪素半導体装置および炭化珪素半導体装置の製造方法 Download PDFInfo
- Publication number
- JP2017168677A JP2017168677A JP2016053121A JP2016053121A JP2017168677A JP 2017168677 A JP2017168677 A JP 2017168677A JP 2016053121 A JP2016053121 A JP 2016053121A JP 2016053121 A JP2016053121 A JP 2016053121A JP 2017168677 A JP2017168677 A JP 2017168677A
- Authority
- JP
- Japan
- Prior art keywords
- silicon carbide
- carbide semiconductor
- conductivity type
- type
- epitaxial layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 127
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 125
- 239000004065 semiconductor Substances 0.000 title claims abstract description 89
- 238000004519 manufacturing process Methods 0.000 title claims description 22
- 239000010410 layer Substances 0.000 claims abstract description 108
- 239000000758 substrate Substances 0.000 claims abstract description 60
- 239000012535 impurity Substances 0.000 claims abstract description 30
- 230000007547 defect Effects 0.000 claims abstract description 19
- 239000002344 surface layer Substances 0.000 claims abstract description 6
- 239000007789 gas Substances 0.000 claims description 41
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 32
- 230000008021 deposition Effects 0.000 claims description 28
- 238000005530 etching Methods 0.000 claims description 26
- 238000000034 method Methods 0.000 claims description 21
- 229910052786 argon Inorganic materials 0.000 claims description 16
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 14
- 239000011261 inert gas Substances 0.000 claims description 8
- VXEGSRKPIUDPQT-UHFFFAOYSA-N 4-[4-(4-methoxyphenyl)piperazin-1-yl]aniline Chemical compound C1=CC(OC)=CC=C1N1CCN(C=2C=CC(N)=CC=2)CC1 VXEGSRKPIUDPQT-UHFFFAOYSA-N 0.000 claims description 7
- 239000005049 silicon tetrachloride Substances 0.000 claims description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 239000010703 silicon Substances 0.000 claims description 5
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 claims description 3
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 claims description 3
- 239000001307 helium Substances 0.000 claims description 3
- 229910052734 helium Inorganic materials 0.000 claims description 3
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 3
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 claims description 3
- 239000005052 trichlorosilane Substances 0.000 claims description 3
- 238000003763 carbonization Methods 0.000 claims 1
- 230000015556 catabolic process Effects 0.000 abstract description 38
- 239000012212 insulator Substances 0.000 abstract 1
- 239000001257 hydrogen Substances 0.000 description 16
- 229910052739 hydrogen Inorganic materials 0.000 description 16
- 238000005468 ion implantation Methods 0.000 description 16
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 10
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 8
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 8
- 239000011229 interlayer Substances 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 5
- 150000002500 ions Chemical class 0.000 description 5
- 238000005979 thermal decomposition reaction Methods 0.000 description 5
- 239000013078 crystal Substances 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 150000002431 hydrogen Chemical class 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- 238000000206 photolithography Methods 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 239000001294 propane Substances 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 230000000630 rising effect Effects 0.000 description 3
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 3
- 230000004913 activation Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 2
- 238000002513 implantation Methods 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 238000009279 wet oxidation reaction Methods 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- 229910003902 SiCl 4 Inorganic materials 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- SLLGVCUQYRMELA-UHFFFAOYSA-N chlorosilicon Chemical compound Cl[Si] SLLGVCUQYRMELA-UHFFFAOYSA-N 0.000 description 1
- BUMGIEFFCMBQDG-UHFFFAOYSA-N dichlorosilicon Chemical compound Cl[Si]Cl BUMGIEFFCMBQDG-UHFFFAOYSA-N 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66053—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide
- H01L29/66068—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
- H01L29/1608—Silicon carbide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1004—Base region of bipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/36—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the concentration or distribution of impurities in the bulk material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02378—Silicon carbide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02441—Group 14 semiconducting materials
- H01L21/02447—Silicon carbide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02529—Silicon carbide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
- H01L21/02573—Conductivity type
- H01L21/02579—P-type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Recrystallisation Techniques (AREA)
Abstract
Description
実施の形態においては、炭化珪素を用いて作製(製造)された炭化珪素半導体装置について、MOSFETを例に説明する。図1は、実施の形態にかかるMOSFETの構成を示す断面図である。
次に、実施の形態にかかるMOSFETの製造方法について説明する。図2〜図4は、実施の形態にかかるMOSFETの製造途中の状態を示す断面図である。
以下では、本発明の実施例1としてMOSFET製造プロセスについて説明する。まず、4H−SiC(四層周期六方晶の炭化珪素)(000−1)面4度オフのn+型炭化珪素基板1の上に1×1016/cm3の不純物濃度、10μmの厚さのn-型エピタキシャル層2を形成した。その上に酸化膜のマスクを形成し、0.4μmの深さで3×1018/cm3の濃度プロファイルが得られるよう、Alを選択的にイオン注入し、p+型ベース領域3を形成し、酸化膜を除去した。なお、Al注入後のp+型ベース領域3の濃度プロファイルは、0.3〜1.0μmの深さで、不純物濃度は1×1018〜1×1020/cm3であることが望ましい。
以下では、本発明の実施例2としてMOSFET製造プロセスについて説明する。まず4H−SiC(000−1)面4度オフのn+型炭化珪素基板1の上に1×1016/cm3の不純物濃度、10μmの厚さのn-型エピタキシャル層2を形成した。その上に酸化膜のマスクを形成し、0.4μmの深さで4×1018/cm3の濃度プロファイルが得られるよう、Alを選択的にイオン注入し、p+型ベース領域3を形成し、酸化膜を除去した。なお、Al注入後の濃度プロファイルは0.3〜1.0μmの深さで、不純物濃度は1×1018〜1×1020/cm3であることが望ましい。
2 n-型エピタキシャル層
3 p+型ベース領域
4 p-型エピタキシャル層
5 n+型ソース領域
6 低濃度n-ベース領域
7 ゲート絶縁膜
8 ゲート電極
9 層間絶縁膜
10 ソース電極
11 ドレイン電極
Claims (4)
- 第1導電型の炭化珪素半導体基板と、
前記炭化珪素半導体基板のおもて面に堆積された、前記炭化珪素半導体基板よりも不純物濃度の低い第1導電型の炭化珪素半導体堆積層と、
前記第1導電型の炭化珪素半導体堆積層の、前記炭化珪素半導体基板に対して反対側の表面層に選択的に設けられた第2導電型領域と、
前記第1導電型の炭化珪素半導体堆積層の、前記炭化珪素半導体基板に対して反対側の表面に堆積された第2導電型の炭化珪素半導体堆積層と、
を備え、
前記第2導電型領域の不純物濃度は、1×1018〜1×1020/cm3であり、前記第2導電型領域の厚みは、0.3〜1.0μmであり、
前記第2導電型の炭化珪素半導体堆積層の表面欠陥密度は、3個/cm2であることを特徴とする炭化珪素半導体装置。 - 第1導電型の炭化珪素半導体基板のおもて面に、前記炭化珪素半導体基板よりも不純物濃度の低い第1導電型の炭化珪素半導体堆積層を形成する工程と、
前記第1導電型の炭化珪素半導体堆積層の、前記炭化珪素半導体基板に対して反対側の表面層に第2導電型領域を選択的に形成する工程と、
前記第1導電型の炭化珪素半導体堆積層の、前記炭化珪素半導体基板に対して反対側の表面に第2導電型の炭化珪素半導体堆積層を形成する工程と、
を含み、
前記第2導電型領域を選択的に形成する工程は、前記第2導電型領域の不純物濃度を1×1018〜1×1020/cm3、前記第2導電型領域の厚みを0.3〜1.0μmに形成し、
前記第2導電型の炭化珪素半導体堆積層を形成する工程は、前記第2導電型の炭化珪素半導体堆積層を形成する際の前記第2導電型領域のエッチング量を0.01〜0.05μmとすることを特徴とする炭化珪素半導体装置の製造方法。 - 前記第2導電型の炭化珪素半導体堆積層を形成する工程は、前記第2導電型の炭化珪素半導体堆積層をエピタキシャル成長させる際、昇温時の雰囲気を不活性である第1のガスと、熱分解してシリコン蒸気を発生する第2のガスとの混合雰囲気とすることを特徴とする請求項2に記載の炭化珪素半導体装置の製造方法。
- 前記第1のガスが、アルゴンまたはヘリウムであり、前記第2のガスが、モノシラン、ジシラン、ジクロロシラン、トリクロロシランまたは四塩化珪素のいずれかであることを特徴とする請求項3に記載の炭化珪素半導体装置の製造方法。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016053121A JP6965499B2 (ja) | 2016-03-16 | 2016-03-16 | 炭化珪素半導体装置および炭化珪素半導体装置の製造方法 |
US15/420,181 US10573716B2 (en) | 2016-03-16 | 2017-01-31 | Method of manufacturing a silicon carbide semiconductor device including depositing a second silicon carbide semiconductor on an etched silicon carbide base region |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016053121A JP6965499B2 (ja) | 2016-03-16 | 2016-03-16 | 炭化珪素半導体装置および炭化珪素半導体装置の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2017168677A true JP2017168677A (ja) | 2017-09-21 |
JP6965499B2 JP6965499B2 (ja) | 2021-11-10 |
Family
ID=59856005
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2016053121A Active JP6965499B2 (ja) | 2016-03-16 | 2016-03-16 | 炭化珪素半導体装置および炭化珪素半導体装置の製造方法 |
Country Status (2)
Country | Link |
---|---|
US (1) | US10573716B2 (ja) |
JP (1) | JP6965499B2 (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101802410B1 (ko) * | 2016-08-10 | 2017-11-29 | 파워큐브세미(주) | SiC 와이드 트랜치형 정션 배리어 쇼트키 다이오드 및 그 제조방법 |
US20220157433A1 (en) * | 2020-11-18 | 2022-05-19 | Evernorth Strategic Development, Inc. | Predictive modeling for mental health management |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003234301A (ja) * | 2001-10-25 | 2003-08-22 | Matsushita Electric Ind Co Ltd | 半導体基板、半導体素子及びその製造方法 |
JP2011023757A (ja) * | 2002-10-18 | 2011-02-03 | National Institute Of Advanced Industrial Science & Technology | 炭化ケイ素半導体装置および炭化ケイ素半導体装置の製造方法 |
JP2013247252A (ja) * | 2012-05-25 | 2013-12-09 | National Institute Of Advanced Industrial & Technology | 炭化珪素半導体装置およびその製造方法 |
JP2015230998A (ja) * | 2014-06-06 | 2015-12-21 | ローム株式会社 | SiCエピタキシャルウェハ、SiCエピタキシャルウェハの製造装置、SiCエピタキシャルウェハの製造方法、および半導体装置 |
JP2016006854A (ja) * | 2014-05-28 | 2016-01-14 | パナソニックIpマネジメント株式会社 | 半導体素子およびその製造方法 |
WO2016013471A1 (ja) * | 2014-07-23 | 2016-01-28 | 富士電機株式会社 | 半導体装置及び半導体装置の製造方法 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1039748A (en) * | 1964-07-25 | 1966-08-24 | Ibm | Improvements relating to methods of growing silicon carbide crystals epitaxially |
US3520740A (en) * | 1967-05-18 | 1970-07-14 | Gen Electric | Method of epitaxial growth of alpha silicon carbide by pyrolytic decomposition of a mixture of silane,propane and hydrogen at atmospheric pressure |
US6306211B1 (en) * | 1999-03-23 | 2001-10-23 | Matsushita Electric Industrial Co., Ltd. | Method for growing semiconductor film and method for fabricating semiconductor device |
EP1306890A2 (en) * | 2001-10-25 | 2003-05-02 | Matsushita Electric Industrial Co., Ltd. | Semiconductor substrate and device comprising SiC and method for fabricating the same |
US7473929B2 (en) * | 2003-07-02 | 2009-01-06 | Panasonic Corporation | Semiconductor device and method for fabricating the same |
US7230274B2 (en) * | 2004-03-01 | 2007-06-12 | Cree, Inc | Reduction of carrot defects in silicon carbide epitaxy |
JP4604241B2 (ja) * | 2004-11-18 | 2011-01-05 | 独立行政法人産業技術総合研究所 | 炭化ケイ素mos電界効果トランジスタおよびその製造方法 |
JP4775102B2 (ja) * | 2005-05-09 | 2011-09-21 | 住友電気工業株式会社 | 半導体装置の製造方法 |
JP4900662B2 (ja) * | 2006-03-02 | 2012-03-21 | 独立行政法人産業技術総合研究所 | ショットキーダイオードを内蔵した炭化ケイ素mos電界効果トランジスタおよびその製造方法 |
JP5071763B2 (ja) * | 2006-10-16 | 2012-11-14 | 独立行政法人産業技術総合研究所 | 炭化ケイ素半導体装置およびその製造方法 |
JP2008311541A (ja) * | 2007-06-18 | 2008-12-25 | Fuji Electric Device Technology Co Ltd | 炭化珪素半導体基板の製造方法 |
WO2013161420A1 (ja) * | 2012-04-24 | 2013-10-31 | 富士電機株式会社 | 縦型高耐圧半導体装置およびその製造方法 |
-
2016
- 2016-03-16 JP JP2016053121A patent/JP6965499B2/ja active Active
-
2017
- 2017-01-31 US US15/420,181 patent/US10573716B2/en active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003234301A (ja) * | 2001-10-25 | 2003-08-22 | Matsushita Electric Ind Co Ltd | 半導体基板、半導体素子及びその製造方法 |
JP2011023757A (ja) * | 2002-10-18 | 2011-02-03 | National Institute Of Advanced Industrial Science & Technology | 炭化ケイ素半導体装置および炭化ケイ素半導体装置の製造方法 |
JP2013247252A (ja) * | 2012-05-25 | 2013-12-09 | National Institute Of Advanced Industrial & Technology | 炭化珪素半導体装置およびその製造方法 |
JP2016006854A (ja) * | 2014-05-28 | 2016-01-14 | パナソニックIpマネジメント株式会社 | 半導体素子およびその製造方法 |
JP2015230998A (ja) * | 2014-06-06 | 2015-12-21 | ローム株式会社 | SiCエピタキシャルウェハ、SiCエピタキシャルウェハの製造装置、SiCエピタキシャルウェハの製造方法、および半導体装置 |
WO2016013471A1 (ja) * | 2014-07-23 | 2016-01-28 | 富士電機株式会社 | 半導体装置及び半導体装置の製造方法 |
Also Published As
Publication number | Publication date |
---|---|
JP6965499B2 (ja) | 2021-11-10 |
US10573716B2 (en) | 2020-02-25 |
US20170271455A1 (en) | 2017-09-21 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
EP1981076B1 (en) | Method for manufacturing silicon carbide semiconductor device | |
JP5637086B2 (ja) | エピタキシャルウエハ及び半導体素子 | |
US8564017B2 (en) | Silicon carbide semiconductor device and method for manufacturing same | |
JP5344873B2 (ja) | 炭化珪素半導体装置の製造方法 | |
WO2010098076A1 (ja) | 蓄積型絶縁ゲート型電界効果型トランジスタ | |
JP2012243966A (ja) | 半導体装置 | |
JP4857697B2 (ja) | 炭化珪素半導体装置 | |
JP2005166930A (ja) | SiC−MISFET及びその製造方法 | |
JP2009266871A (ja) | 炭化珪素半導体装置およびその製造方法 | |
JP2018116986A (ja) | 半導体装置および半導体装置の製造方法 | |
JP6560117B2 (ja) | 半導体装置の製造方法 | |
JP2019004010A (ja) | 半導体装置およびその製造方法 | |
JP2016213473A (ja) | 炭化珪素半導体装置 | |
JP2019140165A (ja) | 炭化珪素半導体素子およびその製造方法 | |
JP6965499B2 (ja) | 炭化珪素半導体装置および炭化珪素半導体装置の製造方法 | |
JP5742712B2 (ja) | 炭化珪素半導体装置の製造方法 | |
JP6991476B2 (ja) | 半導体装置 | |
JP6108330B2 (ja) | 炭化珪素半導体装置及びその製造方法 | |
JP5417760B2 (ja) | 炭化珪素半導体装置の製造方法および炭化珪素半導体装置 | |
JP7009147B2 (ja) | 炭化珪素半導体基板、炭化珪素半導体基板の製造方法および炭化珪素半導体装置 | |
JP5921089B2 (ja) | エピタキシャルウエハの製造方法及び半導体装置の製造方法 | |
JP4857698B2 (ja) | 炭化珪素半導体装置 | |
JP4042336B2 (ja) | 炭化珪素半導体素子 | |
JP2013093440A (ja) | 電界効果トランジスタの製造方法および電界効果トランジスタ | |
JP2011023502A (ja) | 炭化珪素半導体素子及びその製造方法並びに炭化珪素エピタキシャル基板の製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20190214 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20191024 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20191105 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20191225 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20200407 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20200525 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20201110 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20210105 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20210302 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20210531 |
|
C60 | Trial request (containing other claim documents, opposition documents) |
Free format text: JAPANESE INTERMEDIATE CODE: C60 Effective date: 20210531 |
|
A911 | Transfer to examiner for re-examination before appeal (zenchi) |
Free format text: JAPANESE INTERMEDIATE CODE: A911 Effective date: 20210609 |
|
C21 | Notice of transfer of a case for reconsideration by examiners before appeal proceedings |
Free format text: JAPANESE INTERMEDIATE CODE: C21 Effective date: 20210615 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20210921 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20211004 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6965499 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |