JP2015516112A - セラミック多層コンデンサ - Google Patents
セラミック多層コンデンサ Download PDFInfo
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- JP2015516112A JP2015516112A JP2015510701A JP2015510701A JP2015516112A JP 2015516112 A JP2015516112 A JP 2015516112A JP 2015510701 A JP2015510701 A JP 2015510701A JP 2015510701 A JP2015510701 A JP 2015510701A JP 2015516112 A JP2015516112 A JP 2015516112A
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- multilayer capacitor
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- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/30—Stacked capacitors
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B18/00—Layered products essentially comprising ceramics, e.g. refractory products
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- C04B35/48—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zirconium or hafnium oxides, zirconates, zircon or hafnates
- C04B35/49—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zirconium or hafnium oxides, zirconates, zircon or hafnates containing also titanium oxides or titanates
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- C04B35/493—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zirconium or hafnium oxides, zirconates, zircon or hafnates containing also titanium oxides or titanates based on lead zirconates and lead titanates, e.g. PZT containing also other lead compounds
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Abstract
Description
上記の幅Bに対する第1の電極層の数の比≧10/mm
換言すれば、この基体は、幅1mm当たりで少なくとも10個の第1の電極層を備える。さらにこの基体は、好ましくは、幅1mm当たりで少なくとも10個の第2の電極層を備える。
Pb(1-1.5a-0.5b+1.5d+e+0.5f)AaBb(Zr1-xTix)1-c-d-e-f
LidCeFefSicO3 + y・PbO (I)
ここでAは、La,Nd,Y,Eu,Gd,Tb,Dy,Ho,ErおよびYbから成るグループから選択され、Bは、Na,KおよびAgから成るグループから選択され、Cは、Ni,Cu,CoおよびMnから成るグループから選択されており、0<a<0.12,0.05≦x≦0.3,0≦b<0.12,0≦c<0.12,0≦d<0.12,0≦e<0.12,0≦f<0.12,0≦y<1であり、ここで
b+d+e+f>0である。
それぞれの立方体面の中央には、それぞれ1つのO2-イオンが位置している。
この立方体に中心には、Ti4+イオンおよびZr4+イオン(Bサイト)が存在している。この構造は、金属イオンの他の金属イオンおよび欠陥(Fehlstellen)との置換に対して大きな許容範囲を有し、これにより良好にドーピングすることができる。
この基体2は、セラミック層(複数)3と、これらのセラミック層3の間に配設された第1および第2の電極層41,42とを備え、これらのセラミック層3および電極層41,42は、積層方向Sに沿って積層体となるように配設されている。この基体2は、特に少なくとも10個の第1電極層41と、少なくとも10個の第2の電極層42とを備える。これらのセラミック層3は、ここに示す実施形態例においては、約25μmの層厚を有する。これらの電極層41,42は、約3.5μmの層厚を有する。代替として、これらのセラミック層3および電極層41,42は、他の層厚を有してよい。
ESR(min)=3mΩ,ESR(100kHz)=5mΩ,およびESL<4nH。さらに本発明による多層コンデンサ1は、安価に製造することができる。
2 基体
3 セラミック層
41 第1の電極層
42 第2の電極層
43 第3の電極層
51 第1の外部接続部
52 第2の外部接続部
61 第1の側面
62 第2の側面
H 基体の高さ
B 基体の幅
L 基体の長さ
S 積層方向
Claims (14)
- 積層方向(S)に沿って積層体に配設されている複数のセラミック層(3)と、当該セラミック層(3)の間に配設されている複数の第1の電極層(41)および複数の第2の電極層(42)とを備えた基体(2)と、
前記基体(2)の第1の側面(61)上に配設され、前記第1の電極層(41)と電気的に導通して接続されている第1の外部接続部(51)と、
前記基体(2)の前記第1の側面(61)に対向している第2の側面(62)上に配設され、前記第2の電極層(42)と電気的に導通して接続されている第2の外部接続部(52)と、
を有するセラミック多層コンデンサ(1)であって、
前記基体(2)は、前記積層方向(S)に沿って幅Bを有し、
前記基体(2)は、前記第1の側面(61)に垂直な方向に高さHを有し、
前記基体(2)は、前記高さHに垂直な方向に、かつ前記積層方向(S)に垂直な方向に長さLを有し、
B/H≧0.2となっていることを特徴とする、セラミック多層コンデンサ。 - L/B≧1となっていることを特徴とする、請求項1に記載のセラミック多層コンデンサ。
- L/H≧1となっていることを特徴とする、請求項1または2に記載のセラミック多層コンデンサ。
- 前記基体(2)は、複数の第3の電極層(43)を備え、前記第3の電極層は、前記第1の外部接続部(51)とも、また前記第2の外部接続部(52)とも電気的に導通して接続されていないことを特徴とする、請求項1乃至3のいずれか1項に記載の多層コンデンサ。
- 前記第3の電極層(43)は、前記第1の電極層(41)および前記第2の電極層(42)と重なっていることを特徴とする、請求項4に記載の多層コンデンサ。
- 前記セラミック層(3)は、3μm〜200μmの層厚を有することを特徴とする、請求項1乃至5のいずれか1項に記載の多層コンデンサ。
- 前記電極層(3)は、0.1μm〜10μmの層厚を有することを特徴とする、請求項1乃至6のいずれか1項に記載の多層コンデンサ。
- 前記基体(2)は、少なくとも10個の第1の電極層(41)と、少なくとも10個の第2の電極層とを備えることを特徴とする、請求項1乃至7のいずれか1項に記載の多層コンデンサ。
- 前記第1の電極層の数/前記幅B≧10/mmなる関係式となっていることを特徴とする、請求項1乃至8のいずれか1項に記載の多層コンデンサ。
- 前記電極層(41,42,43)は銅を含むことを特徴とする、請求項1乃至9のいずれか1項に記載の多層コンデンサ。
- 前記第1の側面(61)および前記第2の側面(62)は、表面処理されていることを特徴とする、請求項1乃至10のいずれか1項に記載の多層コンデンサ。
- 前記第1の側面(61)および前記第2の側面(62)は、ラッピング,研磨,またはプラズマエッチングされていることを特徴とする請求項11に記載の多層コンデンサ。
- 前記第1の外部接続部(51)および前記第2の外部接続(52)は、それぞれ少なくとも1つのスパッタ層を備え、前記スパッタ層は、前記第1の電極(41)または前記第2の電極層(42)と直接接続されていることを特徴とする、請求項1乃至12のいずれか1項に記載の多層コンデンサ。
- 前記セラミック層(3)は、以下の式
Pb(1-1.5a-0.5b+1.5d+e+0.5f)AaBb(Zr1-xTix)1-c-d-e-f
LidCeFefSicO3 + y・PbO (I)
で表されるセラミック材料を含み、
Aは、La,Nd,Y,Eu,Gd,Tb,Dy,Ho,ErおよびYbから成るグループから選択され、
Bは、Na,KおよびAgから成るグループから選択され、
Cは、Ni,Cu,CoおよびMnから成るグループから選択されており、
0<a<0.12,
0.05≦x≦0.3,
0≦b<0.12,
0≦c<0.12,
0≦d<0.12,
0≦e<0.12,
0≦f<0.12,
0≦y<1であり、
ここで
b+d+e+f>0である、
ことを特徴とする、請求項1乃至13のいずれか1項に記載の多層コンデンサ。
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US20150103466A1 (en) | 2015-04-16 |
CN104285265A (zh) | 2015-01-14 |
EP2847775B1 (de) | 2020-06-03 |
CN104285265B (zh) | 2018-04-17 |
JP6382904B2 (ja) | 2018-08-29 |
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