JP2015504459A - マトリックス中に半導体構造が埋め込まれたコンポジット - Google Patents

マトリックス中に半導体構造が埋め込まれたコンポジット Download PDF

Info

Publication number
JP2015504459A
JP2015504459A JP2014541053A JP2014541053A JP2015504459A JP 2015504459 A JP2015504459 A JP 2015504459A JP 2014541053 A JP2014541053 A JP 2014541053A JP 2014541053 A JP2014541053 A JP 2014541053A JP 2015504459 A JP2015504459 A JP 2015504459A
Authority
JP
Japan
Prior art keywords
composite
core
shell
matrix material
insulating layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2014541053A
Other languages
English (en)
Japanese (ja)
Other versions
JP2015504459A5 (https=
Inventor
ジュアニータ カーティン、
ジュアニータ カーティン、
コリン リーズ、
コリン リーズ、
ブライアン テオバルト、
ブライアン テオバルト、
マシュー ジェイ． カリロ、
マシュー ジェイ． カリロ、
オン−ホ パク、
オン−ホ パク、
ジェオルジェタ マッソン、
ジェオルジェタ マッソン、
スティーブン エム． ヒューズ、
スティーブン エム． ヒューズ、
Original Assignee
パシフィック ライト テクノロジーズ コーポレーション
パシフィック ライト テクノロジーズ コーポレーション
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by パシフィック ライト テクノロジーズ コーポレーション, パシフィック ライト テクノロジーズ コーポレーション filed Critical パシフィック ライト テクノロジーズ コーポレーション
Publication of JP2015504459A publication Critical patent/JP2015504459A/ja
Publication of JP2015504459A5 publication Critical patent/JP2015504459A5/ja
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8511—Wavelength conversion means characterised by their material, e.g. binder
    • H10H20/8512—Wavelength conversion materials
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B19/00—Selenium; Tellurium; Compounds thereof
    • C01B19/007—Tellurides or selenides of metals
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent materials, e.g. electroluminescent or chemiluminescent
    • C09K11/02—Use of particular materials as binders, particle coatings or suspension media therefor
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent materials, e.g. electroluminescent or chemiluminescent
    • C09K11/02—Use of particular materials as binders, particle coatings or suspension media therefor
    • C09K11/025—Use of particular materials as binders, particle coatings or suspension media therefor non-luminescent particle coatings or suspension media
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent materials, e.g. electroluminescent or chemiluminescent
    • C09K11/08—Luminescent materials, e.g. electroluminescent or chemiluminescent containing inorganic luminescent materials
    • C09K11/56—Luminescent materials, e.g. electroluminescent or chemiluminescent containing inorganic luminescent materials containing sulfur
    • C09K11/562—Chalcogenides
    • C09K11/565—Chalcogenides with zinc cadmium
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent materials, e.g. electroluminescent or chemiluminescent
    • C09K11/08—Luminescent materials, e.g. electroluminescent or chemiluminescent containing inorganic luminescent materials
    • C09K11/88—Luminescent materials, e.g. electroluminescent or chemiluminescent containing inorganic luminescent materials containing selenium, tellurium or unspecified chalcogen elements
    • C09K11/881—Chalcogenides
    • C09K11/883—Chalcogenides with zinc or cadmium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • H10H20/854—Encapsulations characterised by their material, e.g. epoxy or silicone resins
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/80—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70
    • C01P2002/84—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70 by UV- or VIS- data
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/01—Particle morphology depicted by an image
    • C01P2004/04—Particle morphology depicted by an image obtained by TEM, STEM, STM or AFM
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/10—Particle morphology extending in one dimension, e.g. needle-like
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/54—Particles characterised by their aspect ratio, i.e. the ratio of sizes in the longest to the shortest dimension
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/60—Particles characterised by their size
    • C01P2004/64—Nanometer sized, i.e. from 1-100 nanometer
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/80—Particles consisting of a mixture of two or more inorganic phases
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0361—Manufacture or treatment of packages of wavelength conversion means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0362—Manufacture or treatment of packages of encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/872—Periodic patterns for optical field-shaping, e.g. photonic bandgap structures
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/70—Nanostructure
    • Y10S977/734—Fullerenes, i.e. graphene-based structures, such as nanohorns, nanococoons, nanoscrolls or fullerene-like structures, e.g. WS2 or MoS2 chalcogenide nanotubes, planar C3N4, etc.
    • Y10S977/742—Carbon nanotubes, CNTs
    • Y10S977/744—Carbon nanotubes, CNTs having atoms interior to the carbon cage
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/70—Nanostructure
    • Y10S977/773—Nanoparticle, i.e. structure having three dimensions of 100 nm or less
    • Y10S977/774—Exhibiting three-dimensional carrier confinement, e.g. quantum dots
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/70—Nanostructure
    • Y10S977/813—Of specified inorganic semiconductor composition, e.g. periodic table group IV-VI compositions
    • Y10S977/824—Group II-VI nonoxide compounds, e.g. CdxMnyTe
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/84—Manufacture, treatment, or detection of nanostructure
    • Y10S977/89—Deposition of materials, e.g. coating, cvd, or ald
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/902—Specified use of nanostructure
    • Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
    • Y10S977/949—Radiation emitter using nanostructure
    • Y10S977/95—Electromagnetic energy

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Nanotechnology (AREA)
  • Composite Materials (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Luminescent Compositions (AREA)
  • Led Device Packages (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
JP2014541053A 2011-11-09 2012-09-14 マトリックス中に半導体構造が埋め込まれたコンポジット Pending JP2015504459A (ja)

Applications Claiming Priority (9)

Application Number Priority Date Filing Date Title
US201161557653P 2011-11-09 2011-11-09
US61/557,653 2011-11-09
US201161558974P 2011-11-11 2011-11-11
US201161558964P 2011-11-11 2011-11-11
US61/558,974 2011-11-11
US61/558,964 2011-11-11
US13/485,762 US20130112942A1 (en) 2011-11-09 2012-05-31 Composite having semiconductor structures embedded in a matrix
US13/485,762 2012-05-31
PCT/US2012/055623 WO2013070319A1 (en) 2011-11-09 2012-09-14 Composite having semiconductor structures embedded in a matrix

Publications (2)

Publication Number Publication Date
JP2015504459A true JP2015504459A (ja) 2015-02-12
JP2015504459A5 JP2015504459A5 (https=) 2015-11-05

Family

ID=48223094

Family Applications (3)

Application Number Title Priority Date Filing Date
JP2014541053A Pending JP2015504459A (ja) 2011-11-09 2012-09-14 マトリックス中に半導体構造が埋め込まれたコンポジット
JP2014541055A Active JP6161620B2 (ja) 2011-11-09 2012-09-14 ナノ結晶コア及び絶縁コートを有するナノ結晶シェルを有する半導体構造
JP2014541054A Pending JP2014534322A (ja) 2011-11-09 2012-09-14 ナノ結晶コア及びナノ結晶シェルを有する半導体構造

Family Applications After (2)

Application Number Title Priority Date Filing Date
JP2014541055A Active JP6161620B2 (ja) 2011-11-09 2012-09-14 ナノ結晶コア及び絶縁コートを有するナノ結晶シェルを有する半導体構造
JP2014541054A Pending JP2014534322A (ja) 2011-11-09 2012-09-14 ナノ結晶コア及びナノ結晶シェルを有する半導体構造

Country Status (6)

Country Link
US (5) US20130112942A1 (https=)
EP (7) EP3613828B1 (https=)
JP (3) JP2015504459A (https=)
KR (3) KR102009925B1 (https=)
CN (3) CN104302729A (https=)
WO (3) WO2013070319A1 (https=)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014534322A (ja) * 2011-11-09 2014-12-18 パシフィック ライト テクノロジーズ コーポレーション ナノ結晶コア及びナノ結晶シェルを有する半導体構造
JP2017206696A (ja) * 2016-05-18 2017-11-24 韓国科学技術院Ｋｏｒｅａ Ａｄｖａｎｃｅｄ Ｉｎｓｔｉｔｕｔｅ Ｏｆ Ｓｃｉｅｎｃｅ Ａｎｄ Ｔｅｃｈｎｏｌｏｇｙ 半導体ナノ結晶シロキサン複合体樹脂組成物およびその製造方法
JP2018519673A (ja) * 2015-07-07 2018-07-19 ルミレッズ ホールディング ベーフェー 光を発するデバイス

Families Citing this family (64)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011008881A2 (en) 2009-07-14 2011-01-20 Spectrawatt, Inc. Light conversion efficiency-enhanced solar cell fabricated with downshifting nanomaterial
US9155497B1 (en) 2011-06-02 2015-10-13 Stc.Unm Compact biosensor of matrix metalloproteinase with cadmium free quantum dots
KR101739576B1 (ko) * 2011-10-28 2017-05-25 삼성전자주식회사 반도체 나노결정-고분자 미분 복합체, 이의 제조방법 및 이를 포함하는 광전자 소자
US9159872B2 (en) 2011-11-09 2015-10-13 Pacific Light Technologies Corp. Semiconductor structure having nanocrystalline core and nanocrystalline shell
JP5759650B2 (ja) * 2012-07-11 2015-08-05 コーニンクレッカ フィリップス エヌ ヴェ シリコーン製品、該シリコーン製品を有する照明ユニット、およびシリコーン製品を製造する方法
US9425365B2 (en) 2012-08-20 2016-08-23 Pacific Light Technologies Corp. Lighting device having highly luminescent quantum dots
US20140170786A1 (en) 2012-12-13 2014-06-19 Juanita N. Kurtin Ceramic composition having dispersion of nano-particles therein and methods of fabricating same
US8889457B2 (en) 2012-12-13 2014-11-18 Pacific Light Technologies Corp. Composition having dispersion of nano-particles therein and methods of fabricating same
US9091655B2 (en) * 2013-03-12 2015-07-28 Pacific Light Technologies Corp. Photoluminescence quantum yield (PLQY) test of quantum dot (QD) films
US9722147B2 (en) 2013-07-03 2017-08-01 Pacific Light Technologies Corp. Network of semiconductor structures with fused insulator coating
US9249354B2 (en) 2013-07-03 2016-02-02 Pacific Light Technologies Corp. Network of semiconductor structures with fused insulator coating
US20160230088A1 (en) * 2013-07-15 2016-08-11 Pacific Light Technologies Corp. Alloyed nanocrystals and quantum dots having alloyed nanocrystals
US9666766B2 (en) 2013-08-21 2017-05-30 Pacific Light Technologies Corp. Quantum dots having a nanocrystalline core, a nanocrystalline shell surrounding the core, and an insulator coating for the shell
US9318649B2 (en) 2013-09-25 2016-04-19 Phoseon Technology, Inc. Multi-wavelength LED curing lamp
US9825205B2 (en) 2014-01-17 2017-11-21 Pacific Light Technologies Corp. Quantum dot (QD) polymer composites for on-chip light emitting diode (LED) applications
CN104211071B (zh) * 2014-09-05 2015-11-11 哈尔滨工业大学 一种CdS@SiO2纳米复合材料的合成方法
KR101686713B1 (ko) * 2014-12-08 2016-12-14 엘지전자 주식회사 양자점-고분자 복합체의 제조 방법, 양자점-고분자 복합체, 이를 포함하는 광 변환 필름, 백라이트 유닛 및 표시장치
JP2016172829A (ja) * 2015-03-17 2016-09-29 コニカミノルタ株式会社 被覆半導体ナノ粒子およびその製造方法。
US10266760B2 (en) 2015-05-13 2019-04-23 Osram Opto Semiconductors Gmbh Composition of, and method for forming, a semiconductor structure with multiple insulator coatings
CN107636112A (zh) * 2015-05-28 2018-01-26 富士胶片株式会社 含有量子点的组合物、波长转换部件、背光单元及液晶显示装置
CN108475694B (zh) * 2015-07-30 2021-10-29 奥斯兰姆奥普托半导体有限责任公司 低镉纳米晶体量子点异质结构
CN105255479B (zh) * 2015-09-28 2017-06-20 上海皇广光电科技有限公司 一种胶体量子点荧光粉复合薄膜制备方法
WO2017096227A1 (en) * 2015-12-02 2017-06-08 Nanosys, Inc. Quantum dot based color conversion layer in display devices
DE102015121720A1 (de) * 2015-12-14 2017-06-14 Osram Opto Semiconductors Gmbh Konversionselement, optoelektronisches Bauelement und Verfahren zur Herstellung eines Konversionselements
KR102618409B1 (ko) * 2015-12-23 2023-12-27 삼성전자주식회사 양자점-폴리머 복합체 및 이를 포함하는 소자
KR20180099784A (ko) * 2015-12-31 2018-09-05 쓰리엠 이노베이티브 프로퍼티즈 컴파니 양자점을 포함하는 복합 입자 및 그의 제조 방법
JP6288575B2 (ja) * 2016-03-10 2018-03-07 パナソニックＩｐマネジメント株式会社 発光装置
TWI796290B (zh) * 2016-04-12 2023-03-21 美商羅門哈斯電子材料有限公司 聚合物複合物及其製造方法
US11667838B2 (en) * 2016-04-26 2023-06-06 Shoei Chemical, Inc. Quantum dot material and method for producing quantum dot material
CN110022993A (zh) * 2016-08-03 2019-07-16 亮锐有限责任公司 包覆型波长转换纳米颗粒
US20180040783A1 (en) 2016-08-03 2018-02-08 Lumileds Llc Coated wavelength converting nanoparticles
CN107760307B (zh) * 2016-08-17 2021-03-02 苏州星烁纳米科技有限公司 一种量子点及其制备方法、背光模组和显示装置
US10294421B2 (en) * 2016-09-07 2019-05-21 Christie Digital Systems Usa, Inc. Core-shell quantum dots and method of synthesizing thereof
KR102640897B1 (ko) * 2016-09-13 2024-02-26 엘지디스플레이 주식회사 양자막대, 그 합성 방법 및 양자막대 표시장치
CN106353847B (zh) * 2016-10-18 2020-06-23 Tcl科技集团股份有限公司 一种CdSe/CdS纳米棒、偏振薄膜及其制备方法
CN110072969A (zh) * 2016-12-15 2019-07-30 默克专利股份有限公司 半导体发光纳米粒子
CN115521774A (zh) * 2016-12-22 2022-12-27 住友化学株式会社 组合物、膜、层叠结构体、发光装置、显示器及组合物的制造方法
KR20180093216A (ko) 2017-02-10 2018-08-21 엘지디스플레이 주식회사 형광체, 발광소자 패키지 및 전자기기
CN107037012B (zh) * 2017-04-05 2019-10-25 华中科技大学 用于激光诱导击穿光谱采集的阶梯光谱仪动态校正方法
US10345688B2 (en) 2017-04-18 2019-07-09 Unique Materials Co., Ltd. Light emitting apparatus using composite material
CN108864824A (zh) * 2017-05-11 2018-11-23 Tcl集团股份有限公司 量子点荧光防伪油墨及其制备方法
WO2019016274A1 (de) * 2017-07-19 2019-01-24 Arras Janet Oberflächen-funktionalisierter luminophor, zusammensetzung und gehärtete zusammensetzung umfassend dergleichen und verwendung dergleichen sowie verfahren zur herstellung eines lumineszenz-markierten artikels
KR102362633B1 (ko) * 2017-08-24 2022-02-14 후지필름 가부시키가이샤 코어 셸 입자, 코어 셸 입자의 제조 방법 및 필름
US10421904B2 (en) * 2017-11-10 2019-09-24 Osram Opto Semiconductors Gmbh Semiconductor structure and light-emitting device with semiconductor structures
KR102515817B1 (ko) 2017-11-28 2023-03-29 엘지디스플레이 주식회사 발광체, 이를 포함하는 발광 필름, 발광다이오드 및 발광장치
US10851297B2 (en) 2018-07-10 2020-12-01 Samsung Electronics Co., Ltd. Composition, patterned film, and electronic device including the same
CN111072056B (zh) * 2018-10-22 2022-02-11 中国科学院大连化学物理研究所 液相CdS纳米棒尺寸控制生长方法
TW202028416A (zh) * 2018-10-26 2020-08-01 日商住友化學股份有限公司 粒子、組合物、薄膜、積層結構體、發光裝置及顯示器
KR102666905B1 (ko) * 2018-10-30 2024-05-17 삼성디스플레이 주식회사 발광 소자 분산제, 이를 포함하는 발광 소자 잉크 및 표시 장치의 제조 방법
KR102208048B1 (ko) * 2018-11-01 2021-01-27 한국세라믹기술원 CdSe/ZnSe 양자점/나노로드 헤테로 나노 구조체의 제조방법
CN109652059A (zh) * 2019-01-11 2019-04-19 深圳扑浪创新科技有限公司 一种量子点薄膜及一种氧化铝包覆量子点的制备方法
US11569421B2 (en) 2019-03-06 2023-01-31 Osram Opto Semiconductors Gmbh Semiconductor structure with nanoparticles and light emitting device having a phosphor material with nanoparticles
CN111718707A (zh) * 2019-03-19 2020-09-29 Tcl集团股份有限公司 一种颗粒及其制备方法，以及一种薄膜
KR102324378B1 (ko) * 2019-09-05 2021-11-10 연세대학교 산학협력단 소수성 측쇄 리간드를 갖는 반도체 나노입자-고분자 나노복합체, 이의 제조방법 및 이를 포함하는 광전자 장치
KR102230527B1 (ko) * 2019-11-04 2021-03-19 가천대학교 산학협력단 정렬된 유무기 복합 열전소재 및 그의 제조방법
US12077698B2 (en) 2020-01-22 2024-09-03 Battelle Memorial Institute Luminescent nanoparticle tracers, and systems and methods for fabrication and use thereof
CN113359360A (zh) * 2020-03-04 2021-09-07 江苏集萃智能液晶科技有限公司 复合粒子及包含复合粒子的调光器件
KR102841608B1 (ko) 2020-08-13 2025-08-01 삼성디스플레이 주식회사 발광 소자, 이의 제조 방법 및 표시 장치
KR102925282B1 (ko) 2020-10-06 2026-02-09 삼성디스플레이 주식회사 발광 소자, 발광 소자의 제조 방법, 및 이를 포함하는 표시 장치
KR102789522B1 (ko) * 2021-05-25 2025-04-03 단국대학교 천안캠퍼스 산학협력단 양자점 및 이의 제조방법
KR102760177B1 (ko) * 2021-08-05 2025-01-24 한국과학기술연구원 표면 개질된 양자점, 이의 제조 방법, 및 이를 포함하는 양자점-폴리머 복합체 또는 전자 소자
US11680200B2 (en) * 2021-11-16 2023-06-20 Saudi Arabian Oil Company Gel fluid composites comprising nanosilica and quantum dots for sealing water production in a wellbore
US12291661B2 (en) * 2021-12-22 2025-05-06 Osram Opto Semiconductors Gmbh Quantum dot structure, method for producing a quantum dot structure, and light emitting device
KR20260012212A (ko) * 2023-05-18 2026-01-26 신에쓰 가가꾸 고교 가부시끼가이샤 양자점 조성물, 수지 조성물, 및 파장변환재료

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006083219A (ja) * 2004-09-14 2006-03-30 Sharp Corp 蛍光体およびこれを用いた発光装置
JP2006513458A (ja) * 2002-08-02 2006-04-20 ウルトラドッツ・インコーポレイテッド 量子ドット、量子ドットを持つナノ複合材料、量子ドットを持つ光学デバイス、および関連した製造方法
JP2007284284A (ja) * 2006-04-14 2007-11-01 National Institute Of Advanced Industrial & Technology コアシェル型粒子及びその製造方法
JP2008050603A (ja) * 2006-08-21 2008-03-06 Samsung Electronics Co Ltd 複合発光材料およびこれを含む発光素子
JP2010126596A (ja) * 2008-11-26 2010-06-10 Showa Denko Kk 液状硬化性樹脂組成物、ナノ粒子蛍光体を含む硬化樹脂の製造方法、発光装置の製造方法、発光装置及び照明装置
JP2011040486A (ja) * 2009-08-07 2011-02-24 Sharp Corp 発光装置および画像表示装置
WO2011092647A2 (en) * 2010-01-28 2011-08-04 Yissum Research Development Company Of The Hebrew University Of Jerusalem Ltd. Phosphor-nanoparticle combinations
US20110220194A1 (en) * 2009-07-14 2011-09-15 Spectrawatt, Inc. Light conversion efficiency-enhanced solar cell fabricated with downshifting nanomaterial

Family Cites Families (168)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1308608A (en) 1969-04-22 1973-02-21 Creators Ltd Decorative plastics strips and motifs
US4539048A (en) 1983-02-09 1985-09-03 Jos. Cavedon Company Inc. Aluminum zirconium metallo-organic complexes useful as coupling agents
US4539049A (en) 1983-02-09 1985-09-03 Jos. Cavedon Co., Inc. Aluminum zirconium metallo-organic complex useful as coupling and hydrophobic agents
DE3887681T2 (de) 1987-11-27 1994-05-11 Battelle Memorial Institute, Richland, Wash. Überkritische mizellentrennung in der flüssig-umkehrphase.
US5760100B1 (en) 1994-09-06 2000-11-14 Ciba Vision Corp Extended wear ophthalmic lens
US7125938B2 (en) 1997-03-11 2006-10-24 Carnegie Mellon University Atom or group transfer radical polymerization
US6322901B1 (en) 1997-11-13 2001-11-27 Massachusetts Institute Of Technology Highly luminescent color-selective nano-crystalline materials
GB9724642D0 (en) 1997-11-21 1998-01-21 British Tech Group Single electron devices
US5990479A (en) * 1997-11-25 1999-11-23 Regents Of The University Of California Organo Luminescent semiconductor nanocrystal probes for biological applications and process for making and using such probes
US6207392B1 (en) 1997-11-25 2001-03-27 The Regents Of The University Of California Semiconductor nanocrystal probes for biological applications and process for making and using such probes
ATE239801T1 (de) 1998-01-22 2003-05-15 Luminex Corp Mikropartikel mit multiplen fluoreszenz-signalen
US6501091B1 (en) 1998-04-01 2002-12-31 Massachusetts Institute Of Technology Quantum dot white and colored light emitting diodes
US6329058B1 (en) 1998-07-30 2001-12-11 3M Innovative Properties Company Nanosize metal oxide particles for producing transparent metal oxide colloids and ceramers
US6235864B1 (en) 1999-05-12 2001-05-22 Sandia Corporation Non-strinking siloxane polymers
US6225198B1 (en) 2000-02-04 2001-05-01 The Regents Of The University Of California Process for forming shaped group II-VI semiconductor nanocrystals, and product formed using process
US6437234B1 (en) 2000-07-27 2002-08-20 Kyocera Corporation Photoelectric conversion device and manufacturing method thereof
ATE519803T1 (de) 2001-06-29 2011-08-15 Nanomics Biosystems Pty Ltd Synthese und verwendung von organosilica-teilchen
US20050049381A1 (en) 2001-07-05 2005-03-03 Mikio Yamahiro Silicon compounds
US6656990B2 (en) 2001-07-11 2003-12-02 Corning Incorporated Curable high refractive index compositions
US20030060547A1 (en) * 2001-07-24 2003-03-27 Chi-Ming Chan Polypropylene/calcium carbonate nanocomposites
US20030066998A1 (en) * 2001-08-02 2003-04-10 Lee Howard Wing Hoon Quantum dots of Group IV semiconductor materials
US7214428B2 (en) * 2001-09-17 2007-05-08 Invitrogen Corporation Highly luminescent functionalized semiconductor nanocrystals for biological and physical applications
US6951672B2 (en) 2002-03-12 2005-10-04 Hewlett-Packard Development Company, L.P. Chemically-modified coatings for enhanced performance of ink-jet images
FR2838241B1 (fr) * 2002-04-09 2004-06-25 Commissariat Energie Atomique Materiaux luminescents constitues de nanocristaux a structure coeur/coquille et leur procede de preparation
US6788453B2 (en) * 2002-05-15 2004-09-07 Yissum Research Development Company Of The Hebrew Univeristy Of Jerusalem Method for producing inorganic semiconductor nanocrystalline rods and their use
US7515333B1 (en) 2002-06-13 2009-04-07 Nanosy's, Inc. Nanotechnology-enabled optoelectronics
EP1537445B1 (en) 2002-09-05 2012-08-01 Nanosys, Inc. Nanocomposites
WO2004023527A2 (en) 2002-09-05 2004-03-18 Nanosys, Inc. Nanostructure and nanocomposite based compositions and photovoltaic devices
US7534488B2 (en) 2003-09-10 2009-05-19 The Regents Of The University Of California Graded core/shell semiconductor nanorods and nanorod barcodes
US20040101822A1 (en) 2002-11-26 2004-05-27 Ulrich Wiesner Fluorescent silica-based nanoparticles
EP1590171B1 (en) 2003-01-22 2011-06-08 The Board Of Trustees Of The University Of Arkansas Monodisperse core/shell and other complex structured nanocrystals and methods of preparing the same
JP2006521278A (ja) * 2003-03-11 2006-09-21 ナノシス・インコーポレイテッド ナノクリスタルを生成するためのプロセスおよびそれによって生成されるナノクリスタル
ATE346898T1 (de) 2003-04-30 2006-12-15 Nanosolutions Gmbh Kern-mantel nanoteilchen für (f) ret- testverfahren
WO2005001889A2 (en) 2003-05-07 2005-01-06 Indiana University Research & Technology Corporation Alloyed semiconductor quantum dots and concentration-gradient alloyed quantum dots, series comprising the same and methods related thereto
CN1312479C (zh) * 2003-08-08 2007-04-25 清华大学 一种纳米荧光磁粒及其制备方法
US7065285B2 (en) 2003-12-01 2006-06-20 Lucent Technologies Inc. Polymeric compositions comprising quantum dots, optical devices comprising these compositions and methods for preparing same
WO2005067485A2 (en) 2003-12-12 2005-07-28 Quantum Dot Corporation Preparation of stable, bright luminescent nanoparticles having compositionally engineered properties
EP1733077B1 (en) 2004-01-15 2018-04-18 Samsung Electronics Co., Ltd. Nanocrystal doped matrixes
US7645397B2 (en) 2004-01-15 2010-01-12 Nanosys, Inc. Nanocrystal doped matrixes
US20050230673A1 (en) 2004-03-25 2005-10-20 Mueller Alexander H Colloidal quantum dot light emitting diodes
GB0409877D0 (en) 2004-04-30 2004-06-09 Univ Manchester Preparation of nanoparticle materials
CA2506388A1 (en) 2004-05-05 2005-11-05 Tieneke Emily Dykstra Surface modification of nanocrystals using multidentate polymer ligands
US7229690B2 (en) 2004-07-26 2007-06-12 Massachusetts Institute Of Technology Microspheres including nanoparticles
US7405002B2 (en) 2004-08-04 2008-07-29 Agency For Science, Technology And Research Coated water-soluble nanoparticles comprising semiconductor core and silica coating
US20060083694A1 (en) * 2004-08-07 2006-04-20 Cabot Corporation Multi-component particles comprising inorganic nanoparticles distributed in an organic matrix and processes for making and using same
US20080296534A1 (en) * 2004-09-09 2008-12-04 Technion Research And Development Foundation Ltd. Core-Alloyed Shell Semiconductor Nanocrystals
US7857993B2 (en) 2004-09-14 2010-12-28 Ut-Battelle, Llc Composite scintillators for detection of ionizing radiation
EP1666562B1 (en) 2004-11-11 2018-03-07 Samsung Electronics Co., Ltd. Interfused nanocrystals and method of preparing the same
EP1812335A4 (en) 2004-11-19 2009-07-01 Agency Science Tech & Res PREPARATION OF CORE / SHELL SEMICONDUCTOR ANOKRISTALS IN AQUEOUS SOLUTIONS
KR100682928B1 (ko) 2005-02-03 2007-02-15 삼성전자주식회사 양자점 화합물을 포함하는 에너지 변환막 및 양자점 박막
WO2006116337A2 (en) 2005-04-25 2006-11-02 Board Of Trustees Of The University Of Arkansas Doped semiconductor nanocrystals and methods of making same
US8084001B2 (en) 2005-05-02 2011-12-27 Cornell Research Foundation, Inc. Photoluminescent silica-based sensors and methods of use
US20080206152A1 (en) 2005-06-07 2008-08-28 Koninklijke Philips Electronics, N.V. In Vivo Expression Profiling
EP1891686B1 (en) 2005-06-15 2011-08-10 Yissum Research Development Company Of The Hebrew University Of Jerusalem Iii-v semiconductor core-heteroshell nanocrystals, method for their manufacture and their applications
KR101159853B1 (ko) 2005-09-12 2012-06-25 삼성전기주식회사 다층구조 나노결정의 제조방법 및 그에 의해 수득된 나노결정
WO2007067257A2 (en) 2005-12-02 2007-06-14 Vanderbilt University Broad-emission nanocrystals and methods of making and using same
KR20080081180A (ko) * 2005-12-21 2008-09-08 더 리서치 파운데이션 오브 스테이트 유니버시티 오브 뉴욕 비구형 반도체 나노결정 및 그의 제조 방법
US7394094B2 (en) 2005-12-29 2008-07-01 Massachusetts Institute Of Technology Semiconductor nanocrystal heterostructures
KR20080103527A (ko) * 2006-02-14 2008-11-27 메사츄세츠 인스티튜트 어브 테크놀로지 백색 발광 장치들
KR100745745B1 (ko) 2006-02-21 2007-08-02 삼성전기주식회사 나노복합재료 및 그 제조방법
WO2007103802A2 (en) 2006-03-03 2007-09-13 William Marsh Rice University Nanorice particles: hybrid plasmonic nanostructures
WO2008070028A2 (en) 2006-12-01 2008-06-12 Qd Vision, Inc. Improved composites and devices including nanoparticles
FR2898519B1 (fr) 2006-03-20 2009-01-09 Commissariat Energie Atomique Nanoparticules notamment a structure coeur coquilles, enrobees
US8002987B2 (en) 2006-03-24 2011-08-23 Postech Academy-Industry Foundation Stationary phase and column using cucurbituril bonded silica gel, and separation method of taxol using the column
US20080038558A1 (en) 2006-04-05 2008-02-14 Evident Technologies, Inc. I-iii-vi semiconductor nanocrystals, i-iii-vi water stable semiconductor nanocrystals, and methods of making same
US7693369B2 (en) 2006-04-07 2010-04-06 The Curators Of The University Of Missouri Hollow core optical ring resonator sensor, sensing methods, and methods of fabrication
US8050303B2 (en) 2006-04-12 2011-11-01 Raytheon Company Laser based on quantum dot activated media with forster resonant energy transfer excitation
US20080003694A1 (en) 2006-04-18 2008-01-03 Swanson Basil I Robust, self-assembled, biocompatible films
KR100819337B1 (ko) 2006-06-14 2008-04-02 재단법인서울대학교산학협력재단 양자점을 이용한 백색광 ｌｅｄ 구조 및 그 제조 방법
US8178202B2 (en) 2006-06-21 2012-05-15 William Marsh Rice University Nonconcentric nanoshells with offset core in relation to shell and method of using the same
WO2008063652A1 (en) 2006-11-21 2008-05-29 Qd Vision, Inc. Blue emitting semiconductor nanocrystals and compositions and devices including same
WO2008063653A1 (en) * 2006-11-21 2008-05-29 Qd Vision, Inc. Semiconductor nanocrystals and compositions and devices including same
US8491818B2 (en) 2006-11-27 2013-07-23 Drexel University Synthesis of water soluble non-toxic nanocrystalline quantum dots and uses thereof
US7933022B2 (en) 2006-12-01 2011-04-26 3M Innovative Properties Company Integrated optical disk resonator
DE102006060366B8 (de) 2006-12-16 2013-08-01 Helmholtz-Zentrum Berlin Für Materialien Und Energie Gmbh Verfahren zur Herstellung von von einer Matrix abgedeckten Quantenpunkten
US20080199510A1 (en) 2007-02-20 2008-08-21 Xtent, Inc. Thermo-mechanically controlled implants and methods of use
EP2121872B1 (en) * 2007-03-19 2015-12-09 Nanosys, Inc. Methods for encapsulating nanocrystals
US8618528B2 (en) 2007-03-20 2013-12-31 Samsung Electronics Co., Ltd. Quantum dot particles on the micron or nanometer scale and method of making the same
KR100841186B1 (ko) 2007-03-26 2008-06-24 삼성전자주식회사 다층 쉘 구조의 나노결정 및 그의 제조방법
US7892739B2 (en) 2007-03-27 2011-02-22 Lehigh University Systems, compositions and methods for nucleic acid detection
US20080237541A1 (en) 2007-03-30 2008-10-02 General Electric Company Thermo-optically functional compositions, systems and methods of making
US9181472B2 (en) 2007-05-31 2015-11-10 Life Technologies Corporation Magnesium-based coatings for nanocrystals
KR20080107578A (ko) 2007-06-07 2008-12-11 삼성전자주식회사 코어/쉘 나노결정 및 그 제조방법
WO2008154645A1 (en) 2007-06-12 2008-12-18 University Of Southern California Functional abiotic nanosystems
US20110233468A1 (en) 2007-08-06 2011-09-29 Agency For Science, Technology And Research Process of forming a cadmium and selenium containing nanocrystalline composite and nanocrystalline composite obtained therefrom
WO2009026141A1 (en) 2007-08-17 2009-02-26 University Of Florida Research Foundation, Inc. Supercrystalline colloidal particles and method of production
JP2009087744A (ja) 2007-09-28 2009-04-23 Dainippon Printing Co Ltd 発光素子
JP5407242B2 (ja) 2007-09-28 2014-02-05 大日本印刷株式会社 エレクトロルミネッセンス素子
JP2009087781A (ja) * 2007-09-28 2009-04-23 Dainippon Printing Co Ltd エレクトロルミネッセンス素子およびその製造方法
JP2009087783A (ja) 2007-09-28 2009-04-23 Dainippon Printing Co Ltd エレクトロルミネッセンス素子
US20100289003A1 (en) 2007-10-29 2010-11-18 Kahen Keith B Making colloidal ternary nanocrystals
US7777233B2 (en) 2007-10-30 2010-08-17 Eastman Kodak Company Device containing non-blinking quantum dots
US9662389B2 (en) 2008-03-31 2017-05-30 Duke University Functionalized metal-coated energy converting nanoparticles, methods for production thereof and methods for use
US7687800B1 (en) 2007-11-23 2010-03-30 University Of Central Florida Research Foundation, Inc. Excitation band-gap tuning of dopant based quantum dots with core-inner shell-outer shell
JP2011518421A (ja) * 2007-12-13 2011-06-23 テクニオン・リサーチ・アンド・ディベロップメント・ファウンデーション・リミテッド Ｉｖ−ｖｉ族の半導体コア−シェルナノ結晶を備える光起電力セル
WO2009094160A2 (en) 2008-01-23 2009-07-30 Massachusetts Institute Of Technology Semiconductor nanocrystals
WO2009100203A1 (en) 2008-02-08 2009-08-13 Emory University Coated quantum dots and methods of making and using thereof
US8617707B2 (en) 2008-03-24 2013-12-31 University Of Rochester Magic size nanoclusters and methods of preparing same
US8445021B2 (en) 2008-04-04 2013-05-21 The Regents Of The University Of California Functionalized magnetic nanoparticles and methods of use thereof
EP2110414A1 (de) 2008-04-18 2009-10-21 Nanoresins AG Oberflächenmodifizierte Siliziumdioxid-Partikel
GB0808153D0 (en) 2008-05-03 2008-06-11 Eastman Kodak Co Solar concentrator
US8012860B2 (en) 2008-06-17 2011-09-06 Uchicago Argonne, Llc Atomic layer deposition for functionalizing colloidal and semiconductor particles
KR100973172B1 (ko) 2008-08-05 2010-08-02 한국과학기술연구원 단일 활성층 구조를 가지는 교류 구동형 발광소자 및 그제조방법
JP5243203B2 (ja) 2008-08-20 2013-07-24 富士フイルム株式会社 複合金属ナノロッド、並びに複合金属ナノロッド含有組成物、及び偏光材料
JP4881358B2 (ja) * 2008-08-28 2012-02-22 株式会社東芝 発光装置
KR100982990B1 (ko) 2008-09-03 2010-09-17 삼성엘이디 주식회사 파장변환플레이트 및 이를 이용한 발광장치
JP5015891B2 (ja) 2008-10-02 2012-08-29 信越化学工業株式会社 金属酸化物含有膜形成用組成物、金属酸化物含有膜形成基板及びパターン形成方法
DE102008052043A1 (de) 2008-10-16 2010-04-22 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Fluoreszenz-Kollektor und dessen Verwendung
US9138711B2 (en) 2008-10-24 2015-09-22 Life Technologies Corporation Stable nanoparticles and methods of making and using such particles
GB0821122D0 (en) 2008-11-19 2008-12-24 Nanoco Technologies Ltd Semiconductor nanoparticle - based light emitting devices and associated materials and methods
CN101735632B (zh) 2008-11-26 2012-05-30 清华大学 纳米复合粒子及其制备方法
JP4936338B2 (ja) 2008-12-26 2012-05-23 シャープ株式会社 半導体ナノ粒子蛍光体
US8343575B2 (en) 2008-12-30 2013-01-01 Nanosys, Inc. Methods for encapsulating nanocrystals and resulting compositions
EP2210616A1 (en) 2009-01-21 2010-07-28 Centre National de la Recherche Scientifique Multifunctional stealth nanoparticles for biomedical use
WO2010107720A2 (en) 2009-03-18 2010-09-23 Tuan Vo-Dinh Up and down conversion systems for production of emitted light from various energy sources
US20110049442A1 (en) 2009-03-31 2011-03-03 Schreuder Michael A Surface structures for enhancement of quantum yield in broad spectrum emission nanocrystals
WO2010114632A2 (en) 2009-04-03 2010-10-07 University Of Houston Metal nanoparticles functionalized with rationally designed coatings and uses thereof
CN104387772B (zh) 2009-05-01 2017-07-11 纳米系统公司 用于纳米结构体分散的官能化基质
US8536776B2 (en) * 2009-05-07 2013-09-17 Massachusetts Institute Of Technology Light emitting device including semiconductor nanocrystals
WO2010132539A2 (en) 2009-05-14 2010-11-18 Photonic Glass Corporation Methods and apparatus for wavelength conversion in solar cells and solar cell covers
US10066164B2 (en) 2009-06-30 2018-09-04 Tiecheng Qiao Semiconductor nanocrystals used with LED sources
EP2453484A4 (en) 2009-07-06 2013-12-04 Toyota Motor Co Ltd PHOTOELECTRIC CONVERSION ELEMENT
GB0916700D0 (en) 2009-09-23 2009-11-04 Nanoco Technologies Ltd Semiconductor nanoparticle-based materials
GB0916699D0 (en) 2009-09-23 2009-11-04 Nanoco Technologies Ltd Semiconductor nanoparticle-based materials
CN102762690A (zh) 2009-11-16 2012-10-31 爱默蕾大学 晶格失配的核壳型量子点
US20110175030A1 (en) 2010-01-15 2011-07-21 Xiaofan Ren Preparing large-sized emitting colloidal nanocrystals
JP5388357B2 (ja) 2010-01-27 2014-01-15 株式会社栄光 太陽光発電装置
KR101744904B1 (ko) * 2010-03-22 2017-06-21 삼성디스플레이 주식회사 양자점-블록공중합체 하이브리드 및 이의 제조 방법과 분산 방법, 그리고 양자점 블록공중합체 하이브리드를 포함하는 발광 소자 및 이의 제조 방법
US8557329B2 (en) 2010-05-06 2013-10-15 International Business Machines Corporation Method for silica encapsulation of magnetic particles
KR101738551B1 (ko) 2010-06-24 2017-05-23 삼성전자주식회사 반도체 나노 결정
US20130206219A1 (en) 2010-08-06 2013-08-15 Juanita N. Kurtin Cooperative photovoltaic networks and photovoltaic cell adaptations for use therein
EP2601042B1 (en) 2010-08-06 2022-03-23 Immunolight, Llc. Color enhancement utilizing up converters and down converters
US10174243B2 (en) 2010-08-24 2019-01-08 Massachusetts Institute Of Technology Highly luminescent semiconductor nanocrystals
JP5805769B2 (ja) * 2010-09-16 2015-11-10 イッスム・リサーチ・ディベロップメント・カンパニー・オブ・ザ・ヘブルー・ユニバーシティ・オブ・エルサレム・リミテッドＹｉｓｓｕｍ Ｒｅｓｅａｒｃｈ Ｄｅｖｅｌｏｐｍｅｎｔ Ｃｏｍｐａｎｙ Ｏｆ Ｔｈｅ Ｈｅｂｒｅｗ Ｕｎｉｖｅｒｓｉｔｙ Ｏｆ Ｊｅｒｕｓａｌｅｍ Ｌｔｄ． 異方性半導体ナノ粒子
WO2012050621A1 (en) 2010-10-15 2012-04-19 Los Alamos National Security, Llc Quantum dot sensitized solar cell
CN103201674B (zh) 2010-11-05 2016-07-20 耶路撒冷希伯来大学伊森姆研究发展公司 偏振照明系统
US9525092B2 (en) 2010-11-05 2016-12-20 Pacific Light Technologies Corp. Solar module employing quantum luminescent lateral transfer concentrator
DK2659029T3 (en) * 2010-12-28 2018-04-16 Life Technologies Corp NANO CRYSTALS WITH MIXTURES OF ORGANIC LIGANDS
EP2472612A1 (en) 2010-12-29 2012-07-04 Koninklijke Philips Electronics N.V. Improved angular color performance of white LED lighting systems
US9606277B2 (en) 2011-01-17 2017-03-28 University Of Utah Research Foundation Apparatus and methods for reducing frequency or severity of photophobic responses or modulating circadian cycles
JP5647028B2 (ja) 2011-02-14 2014-12-24 スタンレー電気株式会社 発光装置およびその製造方法
KR101223671B1 (ko) 2011-02-19 2013-01-17 충남대학교산학협력단 양자점 나노입자가 분산된 에폭시 고분자 복합체 제조방법
US8803412B2 (en) 2011-03-18 2014-08-12 Abl Ip Holding Llc Semiconductor lamp
CN103597568B (zh) 2011-04-01 2016-08-17 纳晶科技股份有限公司 白光发光器件
US9267889B1 (en) 2011-10-12 2016-02-23 Stc.Unm High efficiency light absorbing and light emitting nanostructures
US20130112942A1 (en) 2011-11-09 2013-05-09 Juanita Kurtin Composite having semiconductor structures embedded in a matrix
US9159872B2 (en) 2011-11-09 2015-10-13 Pacific Light Technologies Corp. Semiconductor structure having nanocrystalline core and nanocrystalline shell
US20150278919A1 (en) 2012-05-17 2015-10-01 Wal-Mart Stores, Inc. Systems and Methods for a Catalog of Trending and Trusted Items
US9425365B2 (en) 2012-08-20 2016-08-23 Pacific Light Technologies Corp. Lighting device having highly luminescent quantum dots
US20140117311A1 (en) 2012-10-29 2014-05-01 Juanita N. Kurtin Semiconductor structure having nanocrystalline core and nanocrystalline shell pairing with compositional transition layer
US8889457B2 (en) 2012-12-13 2014-11-18 Pacific Light Technologies Corp. Composition having dispersion of nano-particles therein and methods of fabricating same
US20140264257A1 (en) 2013-03-12 2014-09-18 Steven M. Hughes Group i-iii-vi material nano-crystalline core and group i-iii-vi material nano-crystalline shell pairing
US9091655B2 (en) 2013-03-12 2015-07-28 Pacific Light Technologies Corp. Photoluminescence quantum yield (PLQY) test of quantum dot (QD) films
US9187692B2 (en) 2013-03-12 2015-11-17 Pacific Light Technologies Corp. Nano-crystalline core and nano-crystalline shell pairing having group I-III-VI material nano-crystalline core
US9443998B2 (en) 2013-03-14 2016-09-13 Nanoco Technologies Ltd. Multi-layer-coated quantum dot beads
US10030851B2 (en) 2013-03-20 2018-07-24 Lumileds Llc Encapsulated quantum dots in porous particles
JP6314981B2 (ja) 2013-06-25 2018-04-25 コニカミノルタ株式会社 光学材料、光学フィルム及び発光デバイス
US9722147B2 (en) 2013-07-03 2017-08-01 Pacific Light Technologies Corp. Network of semiconductor structures with fused insulator coating
US9249354B2 (en) 2013-07-03 2016-02-02 Pacific Light Technologies Corp. Network of semiconductor structures with fused insulator coating
US20160230088A1 (en) 2013-07-15 2016-08-11 Pacific Light Technologies Corp. Alloyed nanocrystals and quantum dots having alloyed nanocrystals
US10106734B2 (en) 2014-07-30 2018-10-23 Osram Opto Semiconductor Gmbh Alloyed rod structure in a nanocrystalline quantum dot
JP6428194B2 (ja) 2014-11-21 2018-11-28 日亜化学工業株式会社 波長変換部材及びその製造方法ならびに発光装置
US9831397B2 (en) 2015-03-09 2017-11-28 Pacific Light Technologies Corp. Quantum dots with multiple insulator coatings
CN107849438B (zh) 2015-05-13 2020-05-15 欧司朗光电半导体有限公司 具有多个绝缘涂层的半导体结构的组合物和形成方法
DE112016003002T5 (de) 2015-06-30 2018-03-15 Cree, Inc. Stabilisierte Quantenpunktstruktur und Verfahren zur Herstellung einer stabilisierten Quantenpunktstruktur
US9732274B2 (en) 2015-07-02 2017-08-15 Pacific Light Technologies Corp. Nanocrystalline quantum dot heterostructure
US20170271563A1 (en) 2016-03-15 2017-09-21 Chris Durgan Method and apparatus for controlled semiconductor growth during synthesis of quantum dot materials
US20180166596A1 (en) 2016-05-24 2018-06-14 United States Of America, As Represented By The Secretary Of The Navy Photo-Controllable Composite Dielectric Material

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006513458A (ja) * 2002-08-02 2006-04-20 ウルトラドッツ・インコーポレイテッド 量子ドット、量子ドットを持つナノ複合材料、量子ドットを持つ光学デバイス、および関連した製造方法
JP2006083219A (ja) * 2004-09-14 2006-03-30 Sharp Corp 蛍光体およびこれを用いた発光装置
JP2007284284A (ja) * 2006-04-14 2007-11-01 National Institute Of Advanced Industrial & Technology コアシェル型粒子及びその製造方法
JP2008050603A (ja) * 2006-08-21 2008-03-06 Samsung Electronics Co Ltd 複合発光材料およびこれを含む発光素子
JP2010126596A (ja) * 2008-11-26 2010-06-10 Showa Denko Kk 液状硬化性樹脂組成物、ナノ粒子蛍光体を含む硬化樹脂の製造方法、発光装置の製造方法、発光装置及び照明装置
US20110220194A1 (en) * 2009-07-14 2011-09-15 Spectrawatt, Inc. Light conversion efficiency-enhanced solar cell fabricated with downshifting nanomaterial
JP2011040486A (ja) * 2009-08-07 2011-02-24 Sharp Corp 発光装置および画像表示装置
US20110101387A1 (en) * 2009-08-07 2011-05-05 Kinomoto Junichi Light emitting device and image display device
WO2011092647A2 (en) * 2010-01-28 2011-08-04 Yissum Research Development Company Of The Hebrew University Of Jerusalem Ltd. Phosphor-nanoparticle combinations

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014534322A (ja) * 2011-11-09 2014-12-18 パシフィック ライト テクノロジーズ コーポレーション ナノ結晶コア及びナノ結晶シェルを有する半導体構造
US11205741B2 (en) 2011-11-09 2021-12-21 Osram Opto Semiconductors Gmbh Method for forming a composite having semiconductor structures including a nanocrystalline core and shell embedded in a matrix
US12107197B2 (en) 2011-11-09 2024-10-01 Osram Opto Semiconductors Gmbh Method for forming a composite having semiconductor structures including a nanocrystalline core and shell embedded in a matrix
JP2018519673A (ja) * 2015-07-07 2018-07-19 ルミレッズ ホールディング ベーフェー 光を発するデバイス
JP7038039B2 (ja) 2015-07-07 2022-03-17 ルミレッズ ホールディング ベーフェー 光を発するデバイス
JP2017206696A (ja) * 2016-05-18 2017-11-24 韓国科学技術院Ｋｏｒｅａ Ａｄｖａｎｃｅｄ Ｉｎｓｔｉｔｕｔｅ Ｏｆ Ｓｃｉｅｎｃｅ Ａｎｄ Ｔｅｃｈｎｏｌｏｇｙ 半導体ナノ結晶シロキサン複合体樹脂組成物およびその製造方法

Also Published As

Publication number Publication date
CN104066813A (zh) 2014-09-24
US20220085254A1 (en) 2022-03-17
EP3613827B1 (en) 2021-06-23
EP2798036A1 (en) 2014-11-05
US20130112942A1 (en) 2013-05-09
CN104302729A (zh) 2015-01-21
EP3879585A1 (en) 2021-09-15
EP3495447B1 (en) 2021-06-16
EP2798038A4 (en) 2015-09-23
US20160141463A1 (en) 2016-05-19
EP2798037A4 (en) 2015-09-23
US11205741B2 (en) 2021-12-21
EP2798038A1 (en) 2014-11-05
US20150221838A1 (en) 2015-08-06
EP3613828A1 (en) 2020-02-26
CN104024370B (zh) 2017-07-07
EP2798036A4 (en) 2015-09-23
EP3613827A1 (en) 2020-02-26
US20180342652A1 (en) 2018-11-29
EP3613828B1 (en) 2021-12-15
KR20140102211A (ko) 2014-08-21
KR102009927B1 (ko) 2019-08-12
KR20140102210A (ko) 2014-08-21
EP2798038B1 (en) 2019-11-13
US12107197B2 (en) 2024-10-01
EP2798036B1 (en) 2019-11-13
WO2013070321A1 (en) 2013-05-16
EP2798037B1 (en) 2019-03-20
JP2015504596A (ja) 2015-02-12
EP2798037A1 (en) 2014-11-05
WO2013070319A1 (en) 2013-05-16
JP2014534322A (ja) 2014-12-18
EP3495447A1 (en) 2019-06-12
KR102009925B1 (ko) 2019-08-12
KR20140109377A (ko) 2014-09-15
CN104024370A (zh) 2014-09-03
JP6161620B2 (ja) 2017-07-12
US10074780B2 (en) 2018-09-11
WO2013070320A1 (en) 2013-05-16
US9793446B2 (en) 2017-10-17

Similar Documents

Publication Publication Date Title
JP6161620B2 (ja) ナノ結晶コア及び絶縁コートを有するナノ結晶シェルを有する半導体構造
US9153734B2 (en) Semiconductor structure having nanocrystalline core and nanocrystalline shell
US9478717B2 (en) Network of semiconductor structures with fused insulator coating
EP3017484B1 (en) Network of semiconductor structures with fused insulator coating
CN108475694A (zh) 低镉纳米晶体量子点异质结构
WO2015009728A1 (en) Alloyed nanocrystals and quantum dots having alloyed nanocrystals

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20150911

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20150911

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20160803

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20160809

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20161108

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20161213