JP2015179248A - 表示装置 - Google Patents
表示装置 Download PDFInfo
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- JP2015179248A JP2015179248A JP2014215894A JP2014215894A JP2015179248A JP 2015179248 A JP2015179248 A JP 2015179248A JP 2014215894 A JP2014215894 A JP 2014215894A JP 2014215894 A JP2014215894 A JP 2014215894A JP 2015179248 A JP2015179248 A JP 2015179248A
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- Prior art keywords
- film
- insulating film
- oxide semiconductor
- transistor
- oxide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 150000004706 metal oxides Chemical class 0.000 claims abstract description 72
- 239000004065 semiconductor Substances 0.000 claims description 432
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- 239000002184 metal Substances 0.000 claims description 21
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- 150000004767 nitrides Chemical class 0.000 claims description 16
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- 229910052726 zirconium Inorganic materials 0.000 claims description 8
- 229910052779 Neodymium Inorganic materials 0.000 claims description 7
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- MGWGWNFMUOTEHG-UHFFFAOYSA-N 4-(3,5-dimethylphenyl)-1,3-thiazol-2-amine Chemical compound CC1=CC(C)=CC(C=2N=C(N)SC=2)=C1 MGWGWNFMUOTEHG-UHFFFAOYSA-N 0.000 description 4
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- 238000005468 ion implantation Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 230000007794 irritation Effects 0.000 description 1
- 238000000608 laser ablation Methods 0.000 description 1
- 238000005499 laser crystallization Methods 0.000 description 1
- 230000005389 magnetism Effects 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 239000011572 manganese Substances 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000013081 microcrystal Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 210000003205 muscle Anatomy 0.000 description 1
- 239000002159 nanocrystal Substances 0.000 description 1
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 1
- 238000011017 operating method Methods 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 230000036961 partial effect Effects 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 238000005381 potential energy Methods 0.000 description 1
- 230000009993 protective function Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 150000003254 radicals Chemical class 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910052706 scandium Inorganic materials 0.000 description 1
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 description 1
- 238000001350 scanning transmission electron microscopy Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
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- 238000003860 storage Methods 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- MCULRUJILOGHCJ-UHFFFAOYSA-N triisobutylaluminium Chemical compound CC(C)C[Al](CC(C)C)CC(C)C MCULRUJILOGHCJ-UHFFFAOYSA-N 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
- H10K59/1216—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
- H01L27/1225—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
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- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1248—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
-
- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1255—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs integrated with passive devices, e.g. auxiliary capacitors
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
- H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/123—Connection of the pixel electrodes to the thin film transistors [TFT]
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/124—Insulating layers formed between TFT elements and OLED elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/24—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only semiconductor materials not provided for in groups H01L29/16, H01L29/18, H01L29/20, H01L29/22
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
Abstract
Description
本実施の形態では、本発明の一態様である半導体装置について、図面を用いて説明する。
ここで、酸化物半導体で形成される膜(以下、酸化物半導体膜(OS)という。)及び酸化物導電体で形成される膜(以下、酸化物導電体膜(OC)という。)それぞれにおける、抵抗率の温度依存性について、図45を用いて説明する。図45において、横軸に測定温度を示し、縦軸に抵抗率を示す。また、酸化物半導体膜(OS)の測定結果を丸印で示し、酸化物導電体膜(OC)の測定結果を四角印で示す。
図1(A)に示す構成の変形例について、図1(B)を用いて説明する。図1(B)に示す半導体装置は、導電膜319を用いてトランジスタ103の導電膜310eと導電膜316bとが接続されていることを特徴とする。
図1(A)に示す構成の変形例について、図1(C)を用いて説明する。図1(C)に示す半導体装置は、トランジスタ103の導電膜310eと金属酸化物膜308cとが直接接するように設けることを特徴とする。
本実施の形態1に示すトランジスタの変形例について、図29(A)を用いて説明する。本変形例に示すトランジスタ103cは、多階調マスク(ハーフトーンマスク、グレートーンマスク、位相差マスクなど)を用いて形成された酸化物半導体膜308e及び一対の導電膜310f、310gを有することを特徴とする。また、トランジスタ103c及び容量素子105が、画素電極として機能する導電膜319で接続されていることを特徴とする。
本実施の形態に示すトランジスタの変形例について、図29(B)を用いて説明する。本変形例に示すトランジスタ103dは、チャネル保護構造で形成されたトランジスタであることを特徴とする。
図1(A)乃至(C)に示す構成の変形例について、図30(A)乃至(C)を用いて説明する。図30(A)乃至(C)に示す半導体装置は、容量素子105及び発光素子394に重畳する領域に、導電膜304cと同層に形成した導電膜304dを設けることを特徴とする。
図29(B)に示す構成の変形例について、図43(A)を用いて説明する。図43(A)に示す半導体装置は、図29(B)で設けた導電膜316bを設けずに、代わりに導電膜310j、導電膜310iと同じ層に設けた導電膜310kを設け、容量素子105を構成することを特徴とする。導電膜310kは、一例としては、導電膜310j、導電膜310iなどと同時に成膜され、同時にエッチングされて、形成される。したがって、導電膜310kは、一例としては、導電膜310jなどと同じ材料を有している。
図1(A)に示す構成の変形例について、図31(A)を用いて説明する。図31(A)に示す半導体装置は、図1(A)中の酸化物半導体膜308bと金属酸化物膜308cとが直接接するように設けることを特徴とする。当該構成では、酸化物半導体膜308bは、一つの島状になるよう形成され、トランジスタ103の半導体層と、容量素子105の一方の電極としての機能を兼ね備えたものにできる。
図1(B)に示す構成の変形例について、図32(A)を用いて説明する。図32(A)に示す半導体装置は、導電膜316bを無機絶縁膜53に設けた開口部で導電膜310eと接続し、さらに有機絶縁膜317に設けた開口部で導電膜316bと導電膜319とが直接接するように設けることを特徴とする。
上記列挙した変形例において説明した導電膜は、ゲート絶縁膜51、有機絶縁膜317又は無機絶縁膜53に設けられる開口部で、各層の導電膜同士を接続する機能を有する。その場合、様々な導電膜を介して、接続し、画素領域、駆動回路領域、保護回路領域、周辺領域などで、接続端子や、保護回路として設けることができる。
本実施の形態では、本発明の一態様である半導体装置及びその作製方法について図面を参照して説明する。
本実施の形態では、実施の形態2と異なるトランジスタを有する表示装置について、図13乃至図19を用いて説明する。
本実施の形態の図13に示す表示装置は、駆動回路部のトランジスタとして、デュアルゲート構造のトランジスタを用いて作製されているが、図14に示すように、A−Bに示す駆動回路にデュアルゲート構造のトランジスタ102aを有するとともに、C−Dに示す画素部にデュアルゲート構造のトランジスタ103aを用いてもよい。
実施の形態2または実施の形態3に示す表示装置において、図15に示すように、駆動回路部に設けられたトランジスタ102aと重なる領域であって、且つ有機絶縁膜317上に、導電膜319と同時に形成された導電膜319bを設けてもよい。導電膜319bは、共通電位、接地電位等の任意の電位とすることができる。デュアルゲート構造のトランジスタ102aと重なる導電膜319bを設けることで、トランジスタ102aのゲート電極として機能する導電膜316dに印加された電圧により発生する電界を導電膜319bが遮蔽することが可能である。
実施の形態2または実施の形態3において、駆動回路部及び画素部に有機絶縁膜317を有する表示装置を説明したが、図16に示すように、画素部にのみ有機絶縁膜317aを設けてもよい。
実施の形態2及び実施の形態3に示すトランジスタ102、102a、102b、102c、103、103a、103bにおいて、必要に応じて、酸化物半導体膜を積層構造とすることができる。ここでは、トランジスタ103を用いて説明する。
実施の形態では、上記実施の形態で説明した表示装置に含まれているトランジスタにおいて、酸化物半導体膜に適用可能な一態様について説明する。
以下では、CAAC−OSおよびnc−OSの成膜モデルについて説明する。
以下では、CAAC−OSの成膜モデルにおいて記載のターゲットの劈開面について説明する。
実施の形態2で述べたように、酸化物半導体膜を用いたトランジスタは、オフ状態における電流値(オフ電流値)を低く制御することができる。よって、画像信号等の電気信号の保持時間を長くすることができ、書き込み間隔も長く設定できる。
本実施の形態では、本発明の一態様である表示装置において、カラー表示を行う場合の画素の構成例について図面を参照して説明する。なお本実施の形態において、カラー表示を行うことのできる画素を画素pix_colorとして表し、画素pix_colorを構成する画素をサブ画素sub_pixとして説明する。なお本実施の形態におけるサブ画素sub_pixが、上記実施の形態2で説明した画素pixに相当する。
本実施の形態では、本発明の一態様の表示装置が適用された電子機器の構成例について説明する。また、本実施の形態では、本発明の一態様の表示装置を適用した表示モジュールについて、図25を用いて説明を行う。
GL1 配線
GL2 配線
GL3 配線
EL 発光素子
IL 配線
CL 配線
SL 配線
pix 画素
M1 トランジスタ
M2 トランジスタ
M3 トランジスタ
M4 トランジスタ
M5 トランジスタ
M6 トランジスタ
t1 期間
t2 期間
t3 期間
t4 期間
Vdata 電位
Vano 電位
Vcat 電位
V0 電位
V1 電位
VL0 配線
VL1 配線
11 画素部
14 走査線駆動回路
16 信号線駆動回路
17 走査線
19 信号線
19b 画素電極
25 容量線
28 物質
31 液晶素子
41 発光素子
43 トランジスタ
45 トランジスタ
51 ゲート絶縁膜
53 無機絶縁膜
53a 絶縁膜
70 電子銃室
72 光学系
74 試料室
76 光学系
78 カメラ
80 観察室
82 フィルム室
84 電子
88 物質
92 蛍光板
102 トランジスタ
102a トランジスタ
102b トランジスタ
103 トランジスタ
103a トランジスタ
103c トランジスタ
103d トランジスタ
105 容量素子
301 画素
302 基板
304a 導電膜
304b 導電膜
304c 導電膜
304d 導電膜
305 絶縁膜
306 絶縁膜
307 酸化物半導体膜
308a 酸化物半導体膜
308b 酸化物半導体膜
308c 金属酸化物膜
308d 酸化物半導体膜
308e 酸化物半導体膜
308f 金属酸化物膜
309 導電膜
310a 導電膜
310b 導電膜
310c 導電膜
310d 導電膜
310e 導電膜
310f 導電膜
310g 導電膜
310h 導電膜
310i 導電膜
310j 導電膜
311 絶縁膜
311a 絶縁膜
311b 絶縁膜
312 絶縁膜
312a 絶縁膜
312b 絶縁膜
313 絶縁膜
314 絶縁膜
315 導電膜
316b 導電膜
316d 導電膜
316e 導電膜
317 有機絶縁膜
317a 有機絶縁膜
318 導電膜
319 導電膜
319a 導電膜
319b 導電膜
319c 導電膜
320 配向膜
336 多層膜
336a 酸化物半導体膜
336b 酸化物半導体膜
342 基板
362 開口部
364a 開口部
364b 開口部
364c 開口部
391 絶縁層
392 発光層
393 導電膜
394 発光素子
5000 筐体
5001 表示部
5002 表示部
5003 スピーカー
5004 LEDランプ
5005 操作キー
5006 接続端子
5007 センサ
5008 マイクロフォン
5009 スイッチ
5010 赤外線ポート
5011 記録媒体読込部
5012 支持部
5013 イヤホン
5014 アンテナ
5015 シャッターボタン
5016 受像部
5017 充電器
5018 支持台
5019 外部接続ポート
5020 ポインティングデバイス
5021 リーダ/ライタ
5022 筐体
5023 表示部
5024 リモコン装置
5025 スピーカー
5026 表示モジュール
5027 ユニットバス
5028 表示モジュール
5029 車体
5030 天井
5031 表示モジュール
5032 ヒンジ部
8000 表示モジュール
8001 上部カバー
8002 下部カバー
8003 FPC
8004 タッチパネル
8005 FPC
8006 表示パネル
8007 バックライトユニット
8008 光源
8009 フレーム
8010 プリント基板
8011 バッテリー
Claims (7)
- 酸化物半導体膜を有するトランジスタと、
第1の電極及び第2の電極を有する容量素子と、
前記トランジスタ上に設けられた無機絶縁膜、該無機絶縁膜上に接して設けられた有機絶縁膜上に形成された発光素子と、
を有し、
前記第1の電極は、前記無機絶縁膜に接して設けられた金属酸化物膜であり、
前記第2の電極は、前記無機絶縁膜上に設けられた、透光性を有する第1の導電膜であり、
前記発光素子が有する前記画素電極は、透光性を有する第2の導電膜であり、且つ前記無機絶縁膜及び前記有機絶縁膜に設けられた開口部において前記トランジスタと電気的に接続されていることを特徴とする表示装置。 - 酸化物半導体膜を有するトランジスタと、
第1の電極及び第2の電極を有する容量素子と、
前記トランジスタ上に設けられた無機絶縁膜、該無機絶縁膜上に接して設けられた有機絶縁膜上に形成された発光素子と、
を有し、
前記第1の電極は、前記無機絶縁膜に接して設けられた金属酸化物膜であり、
前記第2の電極は、前記無機絶縁膜上に設けられ、且つ前記トランジスタに電気的に接続された、透光性を有する第1の導電膜であり、
前記発光素子が有する前記画素電極は、透光性を有する第2の導電膜であり、且つ前記無機絶縁膜及び前記有機絶縁膜に設けられた開口部において前記トランジスタと電気的に接続されていることを特徴とする表示装置。 - 酸化物半導体膜を有するトランジスタと、
第1の電極及び第2の電極を有する容量素子と、
前記トランジスタ上に設けられた無機絶縁膜、該無機絶縁膜上に接して設けられた有機絶縁膜上に形成された発光素子と、
を有し、
前記第1の電極は、前記無機絶縁膜に接して設けられ、且つ前記トランジスタに電気的に接続された金属酸化物膜であり、
前記第2の電極は、前記無機絶縁膜上に設けられた、透光性を有する第1の導電膜であり、
前記発光素子が有する前記画素電極は、透光性を有する第2の導電膜であり、且つ前記無機絶縁膜及び前記有機絶縁膜に設けられた開口部において前記トランジスタと電気的に接続されていることを特徴とする表示装置。 - 請求項1乃至3のいずれか一において、
前記無機絶縁膜は、前記酸化物半導体膜に接する酸化物絶縁膜と、
前記酸化物絶縁膜に接する窒化物絶縁膜と、
を有することを特徴とする表示装置。 - 請求項4において、
前記金属酸化物膜は、前記窒化物絶縁膜に接して形成され、且つ前記酸化物半導体膜と同じ金属元素を含むことを特徴とする表示装置。 - 請求項1乃至5のいずれか一において、
前記酸化物半導体膜と前記金属酸化物膜とは、同層に設けられた膜であることを特徴とする表示装置。 - 請求項1乃至6のいずれか一において、
前記酸化物半導体膜及び前記金属酸化物膜は、In−Ga酸化物、In−Zn酸化物、またはIn−M−Zn酸化物(MはAl、Ga、Y、Zr、Sn、La、Ce、Nd、またはHf)を有することを特徴とする表示装置。
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Also Published As
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JP2020052410A (ja) | 2020-04-02 |
US20170162644A1 (en) | 2017-06-08 |
JP2023159059A (ja) | 2023-10-31 |
US9583516B2 (en) | 2017-02-28 |
US20150115259A1 (en) | 2015-04-30 |
JP6625796B2 (ja) | 2019-12-25 |
JP2022104981A (ja) | 2022-07-12 |
US10269888B2 (en) | 2019-04-23 |
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