WO2013115050A1 - 半導体装置およびその製造方法 - Google Patents
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Abstract
Description
3 ゲート電極
4 ゲート絶縁層
4a 下部のゲート絶縁層
4b 上部のゲート絶縁層
5 酸化物半導体層
6s ソース電極
6d ドレイン電極
7 第1透明電極
8 誘電体層
8a 還元絶縁層
8b 絶縁保護層
9 第2透明電極
50 液晶層
100A 半導体装置(TFT基板)
200 対向基板
500 液晶表示装置
Claims (13)
- 基板と、
前記基板の上に形成されたゲート電極と、
前記ゲート電極の上に形成されたゲート絶縁層と、
前記ゲート絶縁層の上に形成された酸化物半導体層と、
前記酸化物半導体層に電気的に接続されたソース電極およびドレイン電極と、
前記ドレイン電極と電気的に接続された第1透明電極と、
前記ソース電極および前記ドレイン電極の上に形成された誘電体層と、
前記誘電体層の上に形成された第2透明電極とを有し、
前記第2透明電極の少なくとも一部は、前記誘電体層を介して前記第1透明電極と重なっており、
前記第1透明電極の上面および下面の少なくとも一方は、前記酸化物半導体層に含まれる酸化物半導体を還元する性質を有する還元絶縁層と接しており、
前記還元絶縁層は、前記酸化物半導体層のチャネル領域に接しておらず、
前記酸化物半導体層および前記第1透明電極は、同一の酸化物膜から形成されている、半導体装置。 - 前記誘電体層は、前記還元絶縁層と、前記酸化物半導体層のチャネル領域に接する酸化物絶縁層とを有する、請求項1に記載の半導体装置。
- 前記ゲート絶縁層は、前記還元絶縁層と、前記酸化物半導体層の下面と接する酸化物絶縁層とを有する、請求項1または2に記載の半導体装置。
- 前記第1透明電極の上に前記ドレイン電極が形成され、
前記第1透明電極は前記ドレイン電極に直接接している、請求項1から3のいずれかに記載の半導体装置。 - 前記基板の法線方向から見たとき、
前記還元絶縁層の端部は、前記ドレイン電極と重なる、請求項1から4のいずれかに記載の半導体装置。 - 前記酸化物膜は、In、GaおよびZnを含む、請求項1から5のいずれかに記載の半導体装置。
- 基板を用意する工程(a)と、
基板上にゲート電極およびゲート絶縁層を形成する工程(b)と、
前記ゲート絶縁層の上に酸化物半導体膜を形成する工程(c)と、
前記酸化物半導体膜の上にソース電極およびドレイン電極を形成する工程(d)と、
前記ソース電極および前記ドレイン電極の上に誘電体層を形成する工程(e)と、
前記工程(c)の前または後に、前記酸化物半導体膜の一部に接し、前記酸化物半導体膜の酸化物半導体を還元する性質を有する還元絶縁層を形成する工程であって、それにより前記酸化物半導体膜のうち前記還元絶縁層と接する部分に第1透明電極を形成し、還元されなかった部分に酸化物半導体層を形成する工程(f)と、
前記誘電体層の上に第2透明電極を形成する工程であって、前記第2透明電極の少なくとも一部は前記誘電体層を介して前記第1透明電極と重なる、工程(g)と、
を包含する、半導体装置の製造方法。 - 前記工程(f)は、前記工程(b)に含まれる、請求項7に記載の半導体装置の製造方法。
- 前記工程(f)は、前記工程(e)に含まれる、請求項7または8に記載の半導体装置の製造方法。
- 前記誘電体層および前記ゲート絶縁層の少なくとも1つは、酸化物絶縁層を含み、
前記酸化物絶縁層は、前記酸化物半導体層と接している、請求項7から9のいずれかに記載の半導体装置の製造方法。 - 前記基板の法線方向から見たとき、
前記還元絶縁層の端部は、前記ドレイン電極と重なる、請求項7から10のいずれかに記載の半導体装置の製造方法。 - 前記酸化物半導体層はIn-Ga-Zn-O系の半導体を含む請求項1から6のいずれかに記載の半導体装置。
- 前記酸化物半導体膜はIn-Ga-Zn-O系の半導体を含む請求項7から11のいずれかに記載の半導体装置の製造方法。
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US14/375,912 US9520476B2 (en) | 2012-01-31 | 2013-01-24 | Semiconductor device and method for producing same |
JP2013556349A JP5824534B2 (ja) | 2012-01-31 | 2013-01-24 | 半導体装置およびその製造方法 |
SG11201404426YA SG11201404426YA (en) | 2012-01-31 | 2013-01-24 | Semiconductor device and method for producing same |
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JP2019153811A (ja) * | 2019-05-24 | 2019-09-12 | 三菱電機株式会社 | 表示用パネル基板、表示パネル、および表示装置 |
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Also Published As
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US20140361295A1 (en) | 2014-12-11 |
TW201342616A (zh) | 2013-10-16 |
JPWO2013115050A1 (ja) | 2015-05-11 |
CN104081507B (zh) | 2017-03-22 |
SG11201404426YA (en) | 2014-11-27 |
US9520476B2 (en) | 2016-12-13 |
TWI543371B (zh) | 2016-07-21 |
JP5824534B2 (ja) | 2015-11-25 |
MY167301A (en) | 2018-08-16 |
CN104081507A (zh) | 2014-10-01 |
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