JP2014512091A5 - - Google Patents
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- JP2014512091A5 JP2014512091A5 JP2013558114A JP2013558114A JP2014512091A5 JP 2014512091 A5 JP2014512091 A5 JP 2014512091A5 JP 2013558114 A JP2013558114 A JP 2013558114A JP 2013558114 A JP2013558114 A JP 2013558114A JP 2014512091 A5 JP2014512091 A5 JP 2014512091A5
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- handle
- handle wafer
- resistivity
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000010410 layer Substances 0.000 claims description 225
- 239000002019 doping agent Substances 0.000 claims description 218
- 239000001301 oxygen Substances 0.000 claims description 158
- 229910052760 oxygen Inorganic materials 0.000 claims description 158
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 156
- 238000000034 method Methods 0.000 claims description 140
- 238000000137 annealing Methods 0.000 claims description 62
- 239000002344 surface layer Substances 0.000 claims description 62
- 230000015572 biosynthetic process Effects 0.000 claims description 59
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 55
- 229910052710 silicon Inorganic materials 0.000 claims description 55
- 239000010703 silicon Substances 0.000 claims description 55
- 239000012212 insulator Substances 0.000 claims description 54
- 238000004519 manufacturing process Methods 0.000 claims description 46
- 230000007423 decrease Effects 0.000 claims description 23
- 230000008569 process Effects 0.000 claims description 23
- 238000012545 processing Methods 0.000 claims description 21
- 238000009828 non-uniform distribution Methods 0.000 claims description 16
- 230000002093 peripheral effect Effects 0.000 claims description 13
- 238000009826 distribution Methods 0.000 claims description 9
- 238000010030 laminating Methods 0.000 claims description 4
- 230000003247 decreasing effect Effects 0.000 claims description 3
- 230000002349 favourable effect Effects 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 description 539
- 238000009792 diffusion process Methods 0.000 description 55
- 239000000370 acceptor Substances 0.000 description 19
- 239000012535 impurity Substances 0.000 description 17
- 229910052782 aluminium Inorganic materials 0.000 description 13
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 13
- 150000002500 ions Chemical class 0.000 description 13
- 238000000926 separation method Methods 0.000 description 11
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 8
- 238000005520 cutting process Methods 0.000 description 8
- 125000004429 atom Chemical group 0.000 description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 6
- 229910052796 boron Inorganic materials 0.000 description 6
- 238000000151 deposition Methods 0.000 description 6
- 230000008021 deposition Effects 0.000 description 6
- 230000006870 function Effects 0.000 description 6
- 238000002513 implantation Methods 0.000 description 6
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 5
- 238000005468 ion implantation Methods 0.000 description 5
- 230000008859 change Effects 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- 238000005498 polishing Methods 0.000 description 4
- 238000003892 spreading Methods 0.000 description 4
- 230000007480 spreading Effects 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 3
- 230000001419 dependent effect Effects 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 2
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 2
- 230000002730 additional effect Effects 0.000 description 2
- 238000004220 aggregation Methods 0.000 description 2
- 230000002776 aggregation Effects 0.000 description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 2
- 238000009499 grossing Methods 0.000 description 2
- 238000010348 incorporation Methods 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- -1 oxygen ions Chemical class 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 230000003746 surface roughness Effects 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 208000031481 Pathologic Constriction Diseases 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 238000001994 activation Methods 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 239000000908 ammonium hydroxide Substances 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000001413 cellular effect Effects 0.000 description 1
- 239000004568 cement Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000003776 cleavage reaction Methods 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000002109 crystal growth method Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 230000032798 delamination Effects 0.000 description 1
- 238000010494 dissociation reaction Methods 0.000 description 1
- 230000005593 dissociations Effects 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 239000012777 electrically insulating material Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000001307 helium Chemical group 0.000 description 1
- 229910052734 helium Chemical group 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical group [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 125000005842 heteroatom Chemical group 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 230000005660 hydrophilic surface Effects 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 229910001338 liquidmetal Inorganic materials 0.000 description 1
- 238000011068 loading method Methods 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 229910052756 noble gas Inorganic materials 0.000 description 1
- 150000002835 noble gases Chemical class 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 150000002926 oxygen Chemical class 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 1
- 238000000678 plasma activation Methods 0.000 description 1
- 230000002028 premature Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 230000007017 scission Effects 0.000 description 1
- 238000005204 segregation Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- 238000009279 wet oxidation reaction Methods 0.000 description 1
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201161453409P | 2011-03-16 | 2011-03-16 | |
| US61/453,409 | 2011-03-16 | ||
| US201161545891P | 2011-10-11 | 2011-10-11 | |
| US61/545,891 | 2011-10-11 | ||
| PCT/US2012/028920 WO2012125632A1 (en) | 2011-03-16 | 2012-03-13 | Silicon on insulator structures having high resistivity regions in the handle wafer and methods for producing such structures |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2014512091A JP2014512091A (ja) | 2014-05-19 |
| JP2014512091A5 true JP2014512091A5 (https=) | 2017-05-18 |
| JP6228462B2 JP6228462B2 (ja) | 2017-11-08 |
Family
ID=45955089
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2013558114A Active JP6228462B2 (ja) | 2011-03-16 | 2012-03-13 | ハンドルウエハ内に高抵抗率領域を有するシリコン・オン・インシュレータ構造体およびそのような構造体の製法 |
Country Status (7)
| Country | Link |
|---|---|
| US (2) | US8846493B2 (https=) |
| EP (1) | EP2686878B1 (https=) |
| JP (1) | JP6228462B2 (https=) |
| KR (1) | KR101870476B1 (https=) |
| CN (1) | CN103430298B (https=) |
| TW (1) | TWI550834B (https=) |
| WO (1) | WO2012125632A1 (https=) |
Families Citing this family (73)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102011113549B4 (de) * | 2011-09-15 | 2019-10-17 | Infineon Technologies Ag | Ein Halbleiterbauelement mit einer Feldstoppzone in einem Halbleiterkörper und ein Verfahren zur Herstellung einer Feldstoppzone in einem Halbleiterkörper |
| US9064823B2 (en) * | 2013-03-13 | 2015-06-23 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method for qualifying a semiconductor wafer for subsequent processing |
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| US9768056B2 (en) * | 2013-10-31 | 2017-09-19 | Sunedison Semiconductor Limited (Uen201334164H) | Method of manufacturing high resistivity SOI wafers with charge trapping layers based on terminated Si deposition |
| FI130149B (en) * | 2013-11-26 | 2023-03-15 | Okmetic Oyj | High-resistive silicon substrate with a reduced radio frequency loss for a radio-frequency integrated passive device |
| WO2015112308A1 (en) | 2014-01-23 | 2015-07-30 | Sunedison Semiconductor Limited | High resistivity soi wafers and a method of manufacturing thereof |
| US20150294868A1 (en) * | 2014-04-15 | 2015-10-15 | Infineon Technologies Ag | Method of Manufacturing Semiconductor Devices Containing Chalcogen Atoms |
| US10312134B2 (en) | 2014-09-04 | 2019-06-04 | Globalwafers Co., Ltd. | High resistivity silicon-on-insulator wafer manufacturing method for reducing substrate loss |
| US9853133B2 (en) * | 2014-09-04 | 2017-12-26 | Sunedison Semiconductor Limited (Uen201334164H) | Method of manufacturing high resistivity silicon-on-insulator substrate |
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| WO2016081367A1 (en) | 2014-11-18 | 2016-05-26 | Sunedison Semiconductor Limited | HIGH RESISTIVITY SILICON-ON-INSULATOR SUBSTRATE COMPRISING A CHARGE TRAPPING LAYER FORMED BY He-N2 CO-IMPLANTATION |
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| JP6447439B2 (ja) * | 2015-09-28 | 2019-01-09 | 信越半導体株式会社 | 貼り合わせｓｏｉウェーハの製造方法 |
| JP6749394B2 (ja) | 2015-11-20 | 2020-09-02 | グローバルウェーハズ カンパニー リミテッドＧｌｏｂａｌＷａｆｅｒｓ Ｃｏ．，Ｌｔｄ． | 滑らかな半導体表面の製造方法 |
| JP6545608B2 (ja) * | 2015-11-30 | 2019-07-17 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
| US20180294158A1 (en) * | 2015-12-04 | 2018-10-11 | The Silanna Group Pty Ltd | Semiconductor on insulator substrate |
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| FR3049763B1 (fr) * | 2016-03-31 | 2018-03-16 | Soitec | Substrat semi-conducteur sur isolant pour applications rf |
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| US20230112094A1 (en) * | 2021-10-11 | 2023-04-13 | Globalwafers Co., Ltd. | Modeling thermal donor formation and target resistivity for single crystal silicon ingot production |
| CN114664657A (zh) * | 2021-10-29 | 2022-06-24 | 中国科学院上海微系统与信息技术研究所 | 一种晶圆表面处理方法 |
| CN114334792B (zh) * | 2021-10-29 | 2025-01-24 | 上海新昇半导体科技有限公司 | Soi结构的半导体硅晶圆及其制备方法 |
| CN114156179A (zh) * | 2021-10-29 | 2022-03-08 | 中国科学院上海微系统与信息技术研究所 | 一种改善绝缘层上硅晶圆表面粗糙度的方法 |
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| CN116068485B (zh) * | 2023-01-03 | 2025-05-27 | 四川九洲电器集团有限责任公司 | 一种基于局部srp的多通道声采集阵列的迭代测向方法 |
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| JPH02278766A (ja) * | 1989-04-19 | 1990-11-15 | Fujitsu Ltd | 半導体装置の製造方法 |
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| US5024723A (en) | 1990-05-07 | 1991-06-18 | Goesele Ulrich M | Method of producing a thin silicon on insulator layer by wafer bonding and chemical thinning |
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| JPH07106512A (ja) | 1993-10-04 | 1995-04-21 | Sharp Corp | 分子イオン注入を用いたｓｉｍｏｘ処理方法 |
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| JP2000100676A (ja) * | 1998-07-23 | 2000-04-07 | Canon Inc | 半導体基板とその作製方法 |
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| US7132309B2 (en) | 2003-04-22 | 2006-11-07 | Chien-Min Sung | Semiconductor-on-diamond devices and methods of forming |
| US6995430B2 (en) * | 2002-06-07 | 2006-02-07 | Amberwave Systems Corporation | Strained-semiconductor-on-insulator device structures |
| US6743662B2 (en) * | 2002-07-01 | 2004-06-01 | Honeywell International, Inc. | Silicon-on-insulator wafer for RF integrated circuit |
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| JP3985768B2 (ja) * | 2003-10-16 | 2007-10-03 | 株式会社Ｓｕｍｃｏ | 高抵抗シリコンウェーハの製造方法 |
| EP1901345A1 (en) * | 2006-08-30 | 2008-03-19 | Siltronic AG | Multilayered semiconductor wafer and process for manufacturing the same |
| US7883990B2 (en) * | 2007-10-31 | 2011-02-08 | International Business Machines Corporation | High resistivity SOI base wafer using thermally annealed substrate |
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| US8089126B2 (en) | 2009-07-22 | 2012-01-03 | International Business Machines Corporation | Method and structures for improving substrate loss and linearity in SOI substrates |
| US8741739B2 (en) * | 2012-01-03 | 2014-06-03 | International Business Machines Corporation | High resistivity silicon-on-insulator substrate and method of forming |
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2012
- 2012-03-13 KR KR1020137024403A patent/KR101870476B1/ko active Active
- 2012-03-13 CN CN201280013586.4A patent/CN103430298B/zh active Active
- 2012-03-13 US US13/419,139 patent/US8846493B2/en active Active
- 2012-03-13 US US13/419,137 patent/US20120235283A1/en not_active Abandoned
- 2012-03-13 JP JP2013558114A patent/JP6228462B2/ja active Active
- 2012-03-13 EP EP12714425.1A patent/EP2686878B1/en active Active
- 2012-03-13 WO PCT/US2012/028920 patent/WO2012125632A1/en not_active Ceased
- 2012-03-15 TW TW101108941A patent/TWI550834B/zh active
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