TWI550834B - 具有在處置晶圓中之高電阻率區域之絕緣體結構矽及用於生產此種結構之方法 - Google Patents

具有在處置晶圓中之高電阻率區域之絕緣體結構矽及用於生產此種結構之方法 Download PDF

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TWI550834B
TWI550834B TW101108941A TW101108941A TWI550834B TW I550834 B TWI550834 B TW I550834B TW 101108941 A TW101108941 A TW 101108941A TW 101108941 A TW101108941 A TW 101108941A TW I550834 B TWI550834 B TW I550834B
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wafer
resistivity
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layer
donor
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TW101108941A
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TW201241994A (en
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傑瑞菲Ｌ 利伯特
盧 非
羅伯特Ｗ 史丹利
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Ｍｅｍｃ電子材料公司
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/19—Preparing inhomogeneous wafers
    • H10P90/1904—Preparing vertically inhomogeneous wafers
    • H10P90/1906—Preparing SOI wafers
    • H10P90/1914—Preparing SOI wafers using bonding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P36/00—Gettering within semiconductor bodies
    • H10P36/03—Gettering within semiconductor bodies within silicon bodies
    • H10P36/07—Gettering within semiconductor bodies within silicon bodies of silicon-on-insulator structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/19—Preparing inhomogeneous wafers
    • H10P90/1904—Preparing vertically inhomogeneous wafers
    • H10P90/1906—Preparing SOI wafers
    • H10P90/1914—Preparing SOI wafers using bonding
    • H10P90/1916—Preparing SOI wafers using bonding with separation or delamination along an ion implanted layer, e.g. Smart-cut
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/011—Manufacture or treatment of isolation regions comprising dielectric materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/181—Semiconductor-on-insulator [SOI] isolation regions, e.g. buried oxide regions of SOI wafers

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  • Crystals, And After-Treatments Of Crystals (AREA)
TW101108941A 2011-03-16 2012-03-15 具有在處置晶圓中之高電阻率區域之絕緣體結構矽及用於生產此種結構之方法 TWI550834B (zh)

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US201161453409P 2011-03-16 2011-03-16
US201161545891P 2011-10-11 2011-10-11

Publications (2)

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TW201241994A TW201241994A (en) 2012-10-16
TWI550834B true TWI550834B (zh) 2016-09-21

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US (2) US8846493B2 (https=)
EP (1) EP2686878B1 (https=)
JP (1) JP6228462B2 (https=)
KR (1) KR101870476B1 (https=)
CN (1) CN103430298B (https=)
TW (1) TWI550834B (https=)
WO (1) WO2012125632A1 (https=)

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Publication number Publication date
KR20140019350A (ko) 2014-02-14
CN103430298A (zh) 2013-12-04
US20120235283A1 (en) 2012-09-20
TW201241994A (en) 2012-10-16
EP2686878B1 (en) 2016-05-18
KR101870476B1 (ko) 2018-06-22
US20120238070A1 (en) 2012-09-20
EP2686878A1 (en) 2014-01-22
JP6228462B2 (ja) 2017-11-08
US8846493B2 (en) 2014-09-30
WO2012125632A1 (en) 2012-09-20
CN103430298B (zh) 2016-03-16
JP2014512091A (ja) 2014-05-19

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