JP2014212329A - 蛍光体変換led - Google Patents
蛍光体変換led Download PDFInfo
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- JP2014212329A JP2014212329A JP2014121320A JP2014121320A JP2014212329A JP 2014212329 A JP2014212329 A JP 2014212329A JP 2014121320 A JP2014121320 A JP 2014121320A JP 2014121320 A JP2014121320 A JP 2014121320A JP 2014212329 A JP2014212329 A JP 2014212329A
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
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- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/54—Encapsulations having a particular shape
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
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- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
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- H01L2933/0091—Scattering means in or on the semiconductor body or semiconductor body package
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
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- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
- Luminescent Compositions (AREA)
- Optical Filters (AREA)
Abstract
Description
Claims (19)
- ダイの上面および当該ダイの1以上の側面を通して第一の波長の光を放射するダイであって、当該ダイが取付け基板の表面に接合されている、ダイ、
当該第一の波長の光を第二の波長の光に変換する蛍光物質の層を含む光変換要素であって、当該光変換要素が当該ダイの当該上面に接合された底面を有し、当該光変換要素が当該ダイのまわりに空間が存在するような横方向の寸法を有し、当該空間が当該基板と当該光変換要素とによって境界されている、光変換要素、および
散乱環であって、当該散乱環が当該ダイの当該側面を取り囲んで当該空間中に位置し、当該散乱環の幅が、当該ダイの当該側面から放射された当該光のほとんどが当該散乱環によって当該光変換要素中に散乱されるように構成されている、散乱環
を含んでいる光源。 - 当該散乱環が、粒子を中に懸濁させた透明物質を含んでいる、請求項1に記載の光源。
- 当該透明物質が、当該光変換要素の当該底面と当該基板の表面とを濡らす液状前駆体を有する、請求項2に記載の光源。
- 当該透明物質がエポキシを含んでいる、請求項2に記載の光源。
- 当該透明物質がシリコーンを含んでいる、請求項2に記載の光源。
- 当該粒子が酸化チタンを含んでいる、請求項2に記載の光源。
- 当該光変換要素が、蛍光体粒子を中に懸濁させた透明物質を含んでいる、請求項1に記載の光源。
- 当該光変換要素が単結晶蛍光体を含んでいる、請求項1に記載の光源。
- 当該光変換要素が、蛍光物質を中に含有する透明物質の平面層、および当該平面層に接合された透明物質の層を含む光処理層であって当該光処理層が当該平面層の上を覆う非平面状の表面を有する光処理層、を含んでいる、請求項1に記載の光源。
- 当該ダイに対応する非平面状の表面を有する光学要素をもたらすように成形された、当該取付け基板上を覆う透明物質の層をさらに含んでいる、請求項1に記載の光源。
- 光源を製作する方法において、当該方法が
ダイの上面およびダイの1以上の側面を通して第一の波長の光を放射する複数のダイを取付ける工程であって、当該ダイが取付け基板の表面に接合される工程、
光変換要素のシートを用意する工程であって、各光変換要素が当該第一の波長の光を第二の波長の光に変換する蛍光物質の層を含み、各光変換要素が当該ダイの一つに対応し、当該対応光変換要素の底面が当該対応ダイの当該上面上に位置するように当該対応ダイと位置合わせされる工程、
光変換要素の当該シートを当該ダイの当該上面に接合する工程であって、当該対応ダイのまわりに空間が存在し当該空間が当該基板と当該対応光変換要素とによって境界されているように選択された横方向の寸法を、各光変換要素が有する工程、および
散乱環を作製する工程であって、当該散乱環が、各ダイの当該側面を取り囲んで当該ダイのまわりの当該空間中に位置し、当該散乱環の幅が、当該ダイの当該側面から放射された当該光のほとんどが当該散乱環によって当該ダイに対応する当該光変換要素中に散乱されるように構成されている、当該散乱環を作製する工程、
を含む、上記の方法。 - 当該散乱環が、散乱粒子を中に懸濁させた透明物質を含む、請求項11に記載の方法。
- 当該透明物質が、当該光変換要素の当該底面と当該基板の表面とを濡らす液状前駆体を有し、当該散乱環が、当該液状前駆体中に当該散乱粒子を懸濁させて液状環前駆体を形成し、当該液状環前駆体を当該ダイのまわりの当該空間中に導入し、そして当該液状前駆体を硬化することによって作製される、請求項12に記載の方法。
- 当該液状環前駆体が、毛細管作用によって当該空間中に引き込まれる、請求項13に記載の方法。
- 当該光変換要素のシートを用意する工程が、個々の光変換要素を担体に接着する工程を含む、請求項11に記載の方法。
- 当該光変換要素のシートを用意する工程が、パターニングされた蛍光体層を担体上に作製する工程を含む、請求項11に記載の方法。
- 当該蛍光体層が、当該蛍光体を含有する液状前駆体物質を含み、当該パターニングされた蛍光体層が、当該液状前駆体物質を当該担体上に印刷することによって作製される、請求項16に記載の方法。
- 当該取付け基板上に透明物質の層をモールド成形して、各ダイに対応する非平面状の表面を有する光学要素を配設する工程をさらに含む、請求項11に記載の方法。
- 当該光学要素のうちの一つが、複数の当該ダイを収納する、請求項18に記載の方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/202,793 US7973327B2 (en) | 2008-09-02 | 2008-09-02 | Phosphor-converted LED |
US12/202,793 | 2008-09-02 |
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JP2011526096A Division JP5753494B2 (ja) | 2008-09-02 | 2009-08-19 | 蛍光体変換led |
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JP2016093163A Division JP2016167626A (ja) | 2008-09-02 | 2016-05-06 | 蛍光体変換led |
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JP2014212329A true JP2014212329A (ja) | 2014-11-13 |
JP2014212329A5 JP2014212329A5 (ja) | 2014-12-25 |
JP6010583B2 JP6010583B2 (ja) | 2016-10-19 |
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JP2011526096A Active JP5753494B2 (ja) | 2008-09-02 | 2009-08-19 | 蛍光体変換led |
JP2014121320A Active JP6010583B2 (ja) | 2008-09-02 | 2014-06-12 | 蛍光体変換led |
JP2016093163A Pending JP2016167626A (ja) | 2008-09-02 | 2016-05-06 | 蛍光体変換led |
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Country Status (7)
Country | Link |
---|---|
US (2) | US7973327B2 (ja) |
EP (1) | EP2332187B1 (ja) |
JP (3) | JP5753494B2 (ja) |
KR (2) | KR20110051222A (ja) |
CN (1) | CN102132428B (ja) |
TW (1) | TWI419376B (ja) |
WO (1) | WO2010027672A2 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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WO2016204408A1 (ko) * | 2015-06-15 | 2016-12-22 | 엘지이노텍 주식회사 | 발광 소자 패키지 |
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Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20100328923A1 (en) * | 2009-06-25 | 2010-12-30 | Bridgelux, Inc. | Multiple layer phosphor bearing film |
US20100327733A1 (en) * | 2009-06-25 | 2010-12-30 | Bridgelux, Inc. | Multiple layer phosphor bearing film |
WO2010151600A1 (en) | 2009-06-27 | 2010-12-29 | Michael Tischler | High efficiency leds and led lamps |
US9480133B2 (en) | 2010-01-04 | 2016-10-25 | Cooledge Lighting Inc. | Light-emitting element repair in array-based lighting devices |
US8653539B2 (en) | 2010-01-04 | 2014-02-18 | Cooledge Lighting, Inc. | Failure mitigation in arrays of light-emitting devices |
US8232117B2 (en) * | 2010-04-30 | 2012-07-31 | Koninklijke Philips Electronics N.V. | LED wafer with laminated phosphor layer |
JP5566785B2 (ja) * | 2010-06-22 | 2014-08-06 | 日東電工株式会社 | 複合シート |
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WO2012000114A1 (en) | 2010-06-29 | 2012-01-05 | Cooledge Lightning Inc. | Electronic devices with yielding substrates |
JP2012069577A (ja) * | 2010-09-21 | 2012-04-05 | Citizen Electronics Co Ltd | 半導体発光装置及びその製造方法 |
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US8373183B2 (en) | 2011-02-22 | 2013-02-12 | Hong Kong Applied Science and Technology Research Institute Company Limited | LED package for uniform color emission |
JP5745319B2 (ja) * | 2011-04-14 | 2015-07-08 | 日東電工株式会社 | 蛍光反射シート、および、発光ダイオード装置の製造方法 |
JP5670249B2 (ja) * | 2011-04-14 | 2015-02-18 | 日東電工株式会社 | 発光素子転写シートの製造方法、発光装置の製造方法、発光素子転写シートおよび発光装置 |
JP5680472B2 (ja) * | 2011-04-22 | 2015-03-04 | シチズンホールディングス株式会社 | 半導体発光装置の製造方法 |
JP2012243822A (ja) * | 2011-05-16 | 2012-12-10 | Citizen Electronics Co Ltd | Led発光装置とその製造方法 |
WO2012169289A1 (ja) * | 2011-06-07 | 2012-12-13 | 東レ株式会社 | 樹脂シート積層体、その製造方法およびそれを用いた蛍光体含有樹脂シート付きledチップの製造方法 |
JP5730680B2 (ja) * | 2011-06-17 | 2015-06-10 | シチズン電子株式会社 | Led発光装置とその製造方法 |
WO2013039897A2 (en) * | 2011-09-14 | 2013-03-21 | VerLASE TECHNOLOGIES LLC | Phosphors for use with leds and other optoelectronic devices |
JP2013077679A (ja) * | 2011-09-30 | 2013-04-25 | Citizen Electronics Co Ltd | 半導体発光装置とその製造方法 |
US8779694B1 (en) | 2011-12-08 | 2014-07-15 | Automated Assembly Corporation | LEDs on flexible substrate arrangement |
CN103975041B (zh) | 2011-12-16 | 2017-10-10 | 皇家飞利浦有限公司 | 用于led的水玻璃中的磷光体 |
CN103187484A (zh) * | 2011-12-27 | 2013-07-03 | 展晶科技(深圳)有限公司 | 发光二极管封装方法 |
JP5860289B2 (ja) * | 2012-01-05 | 2016-02-16 | シチズン電子株式会社 | Led装置の製造方法 |
US10043952B2 (en) * | 2012-03-30 | 2018-08-07 | Lumileds Llc | Light emitting device with wavelength converting side coat |
US9404627B2 (en) * | 2012-04-13 | 2016-08-02 | Koninklijke Philips N.V. | Light conversion assembly, a lamp and a luminaire |
JP2013232477A (ja) * | 2012-04-27 | 2013-11-14 | Toshiba Corp | 発光モジュール |
US8629466B2 (en) * | 2012-05-22 | 2014-01-14 | Hong Kong Applied Science and Technology Research Institute Company Limited | Lighting device |
US8877561B2 (en) | 2012-06-07 | 2014-11-04 | Cooledge Lighting Inc. | Methods of fabricating wafer-level flip chip device packages |
KR101922457B1 (ko) * | 2012-06-28 | 2018-11-27 | 도레이 카부시키가이샤 | 수지 시트 적층체 및 그것을 사용한 반도체 발광 소자의 제조 방법 |
WO2014013406A1 (en) * | 2012-07-20 | 2014-01-23 | Koninklijke Philips N.V. | Led with ceramic green phosphor and protected red phosphor layer |
JP5995579B2 (ja) * | 2012-07-24 | 2016-09-21 | シチズンホールディングス株式会社 | 半導体発光装置及びその製造方法 |
JP6055259B2 (ja) * | 2012-10-03 | 2016-12-27 | 日東電工株式会社 | 封止シート被覆半導体素子、その製造方法、半導体装置およびその製造方法 |
JP6215525B2 (ja) * | 2012-10-23 | 2017-10-18 | スタンレー電気株式会社 | 半導体発光装置 |
US9054235B2 (en) | 2013-01-22 | 2015-06-09 | Micron Technology, Inc. | Solid-state transducer devices with optically-transmissive carrier substrates and related systems, methods, and devices |
KR102103881B1 (ko) * | 2013-03-07 | 2020-04-23 | 포항공과대학교 산학협력단 | Uv led칩을 이용하는 백색 발광소자 |
DE102013103600A1 (de) * | 2013-04-10 | 2014-10-30 | Osram Opto Semiconductors Gmbh | Modul mit wenigstens zwei Halbleiterchips |
CN103258940B (zh) * | 2013-05-15 | 2017-10-24 | 中国科学院福建物质结构研究所 | 一种全固态白光发光二极管的封装方法 |
JP6568062B2 (ja) * | 2013-07-18 | 2019-08-28 | ルミレッズ ホールディング ベーフェー | 発光デバイスのウェファのダイシング |
CN104733594B (zh) * | 2013-12-24 | 2017-09-19 | 展晶科技(深圳)有限公司 | Led封装体 |
JP6331389B2 (ja) * | 2013-12-27 | 2018-05-30 | 日亜化学工業株式会社 | 発光装置 |
DE102014100772B4 (de) | 2014-01-23 | 2022-11-03 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Verfahren zur Herstellung von optoelektronischen Halbleiterbauelementen und optoelektronisches Halbleiterbauelement |
US9997676B2 (en) | 2014-05-14 | 2018-06-12 | Genesis Photonics Inc. | Light emitting device and manufacturing method thereof |
US10439111B2 (en) | 2014-05-14 | 2019-10-08 | Genesis Photonics Inc. | Light emitting device and manufacturing method thereof |
KR102145208B1 (ko) | 2014-06-10 | 2020-08-19 | 삼성전자주식회사 | 발광소자 패키지 제조방법 |
TWI557952B (zh) | 2014-06-12 | 2016-11-11 | 新世紀光電股份有限公司 | 發光元件 |
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DE102014117892A1 (de) * | 2014-12-04 | 2016-06-09 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement sowie optoelektronisches Bauteil |
CN105720164B (zh) * | 2014-12-05 | 2019-10-11 | 江西省晶能半导体有限公司 | 一种白光led的制备方法 |
US9666564B2 (en) * | 2014-12-16 | 2017-05-30 | PlayNitride Inc. | Light emitting device |
US10269776B2 (en) | 2014-12-16 | 2019-04-23 | PlayNitride Inc. | Light emitting device |
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JP2015099940A (ja) * | 2015-02-23 | 2015-05-28 | 日亜化学工業株式会社 | 発光装置 |
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US9922963B2 (en) | 2015-09-18 | 2018-03-20 | Genesis Photonics Inc. | Light-emitting device |
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US10317614B1 (en) | 2017-03-14 | 2019-06-11 | Automatad Assembly Corporation | SSL lighting apparatus |
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KR20190052600A (ko) * | 2017-11-08 | 2019-05-16 | 주식회사 대성엔지니어링 | Led 제조시스템 및 led 제조방법 |
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US10995931B1 (en) | 2020-08-06 | 2021-05-04 | Automated Assembly Corporation | SSL lighting apparatus |
JP7236016B2 (ja) * | 2021-01-12 | 2023-03-09 | 日亜化学工業株式会社 | 発光装置 |
Citations (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06312600A (ja) * | 1992-11-20 | 1994-11-08 | Saki World:Kk | 発光装飾器具 |
JP2000031548A (ja) * | 1998-07-09 | 2000-01-28 | Stanley Electric Co Ltd | 面実装型発光ダイオードおよびその製造方法 |
JP2001215899A (ja) * | 2000-01-31 | 2001-08-10 | Rohm Co Ltd | 発光表示装置およびその製法 |
JP2002280601A (ja) * | 2000-06-08 | 2002-09-27 | Showa Denko Kk | 半導体発光素子 |
JP2002305328A (ja) * | 2001-04-09 | 2002-10-18 | Nichia Chem Ind Ltd | 発光素子 |
JP2005268323A (ja) * | 2004-03-16 | 2005-09-29 | Sumitomo Electric Ind Ltd | 半導体発光装置 |
JP2005277227A (ja) * | 2004-03-25 | 2005-10-06 | Citizen Electronics Co Ltd | 半導体発光装置 |
JP2006060099A (ja) * | 2004-08-23 | 2006-03-02 | Okaya Electric Ind Co Ltd | 発光ダイオード及びその製造方法 |
JP2007019096A (ja) * | 2005-07-05 | 2007-01-25 | Toyoda Gosei Co Ltd | 発光装置及びその製造方法 |
GB2432967A (en) * | 2005-11-30 | 2007-06-06 | Unity Opto Technology Co Ltd | White light LED with fluorescent powder containing wavelength converting plate |
US20070269925A1 (en) * | 2006-05-16 | 2007-11-22 | Philips Lumileds Lighting Company, Llc | Process For Preparing A Semiconductor Light-Emitting Device For Mounting |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000150969A (ja) * | 1998-11-16 | 2000-05-30 | Matsushita Electronics Industry Corp | 半導体発光装置 |
JP3627592B2 (ja) * | 1999-10-08 | 2005-03-09 | 日亜化学工業株式会社 | 発光装置の製造方法 |
JP2001308392A (ja) * | 2000-04-26 | 2001-11-02 | Sony Corp | 発光ダイオード及び画像表示装置 |
JP3685018B2 (ja) * | 2000-05-09 | 2005-08-17 | 日亜化学工業株式会社 | 発光素子とその製造方法 |
JP2002313826A (ja) * | 2001-04-17 | 2002-10-25 | Shinko Electric Ind Co Ltd | 半導体装置の樹脂封止装置及び半導体装置の樹脂封止方法 |
US7997771B2 (en) * | 2004-06-01 | 2011-08-16 | 3M Innovative Properties Company | LED array systems |
JP3936365B2 (ja) * | 2004-09-14 | 2007-06-27 | ソニーケミカル&インフォメーションデバイス株式会社 | 機能素子実装モジュール及びその製造方法 |
JP2006314082A (ja) * | 2005-04-04 | 2006-11-16 | Nippon Sheet Glass Co Ltd | 発光ユニット、該発光ユニットを用いた照明装置及び画像読取装置 |
KR20070033801A (ko) * | 2005-09-22 | 2007-03-27 | 삼성전기주식회사 | 발광 다이오드 패키지 및 그 제조 방법 |
TW200725940A (en) * | 2005-12-29 | 2007-07-01 | Anteya Technology Corp | LED package structure |
WO2007080803A1 (ja) * | 2006-01-16 | 2007-07-19 | Matsushita Electric Industrial Co., Ltd. | 半導体発光装置 |
EP1979954B1 (en) * | 2006-01-24 | 2015-03-18 | Philips Intellectual Property & Standards GmbH | Light-emitting device |
JP5631745B2 (ja) * | 2008-02-21 | 2014-11-26 | 日東電工株式会社 | 透光性セラミックプレートを備える発光装置 |
-
2008
- 2008-09-02 US US12/202,793 patent/US7973327B2/en active Active
-
2009
- 2009-08-19 KR KR1020117004957A patent/KR20110051222A/ko active Application Filing
- 2009-08-19 CN CN200980133270.7A patent/CN102132428B/zh active Active
- 2009-08-19 WO PCT/US2009/054361 patent/WO2010027672A2/en active Application Filing
- 2009-08-19 JP JP2011526096A patent/JP5753494B2/ja active Active
- 2009-08-19 EP EP09811954.8A patent/EP2332187B1/en active Active
- 2009-08-19 KR KR20157005739A patent/KR20150038604A/ko not_active Application Discontinuation
- 2009-08-27 TW TW098128765A patent/TWI419376B/zh active
-
2011
- 2011-03-24 US US13/071,292 patent/US8048695B2/en active Active
-
2014
- 2014-06-12 JP JP2014121320A patent/JP6010583B2/ja active Active
-
2016
- 2016-05-06 JP JP2016093163A patent/JP2016167626A/ja active Pending
Patent Citations (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06312600A (ja) * | 1992-11-20 | 1994-11-08 | Saki World:Kk | 発光装飾器具 |
JP2000031548A (ja) * | 1998-07-09 | 2000-01-28 | Stanley Electric Co Ltd | 面実装型発光ダイオードおよびその製造方法 |
JP2001215899A (ja) * | 2000-01-31 | 2001-08-10 | Rohm Co Ltd | 発光表示装置およびその製法 |
JP2002280601A (ja) * | 2000-06-08 | 2002-09-27 | Showa Denko Kk | 半導体発光素子 |
JP2002305328A (ja) * | 2001-04-09 | 2002-10-18 | Nichia Chem Ind Ltd | 発光素子 |
JP2005268323A (ja) * | 2004-03-16 | 2005-09-29 | Sumitomo Electric Ind Ltd | 半導体発光装置 |
JP2005277227A (ja) * | 2004-03-25 | 2005-10-06 | Citizen Electronics Co Ltd | 半導体発光装置 |
JP2006060099A (ja) * | 2004-08-23 | 2006-03-02 | Okaya Electric Ind Co Ltd | 発光ダイオード及びその製造方法 |
JP2007019096A (ja) * | 2005-07-05 | 2007-01-25 | Toyoda Gosei Co Ltd | 発光装置及びその製造方法 |
GB2432967A (en) * | 2005-11-30 | 2007-06-06 | Unity Opto Technology Co Ltd | White light LED with fluorescent powder containing wavelength converting plate |
US20070269925A1 (en) * | 2006-05-16 | 2007-11-22 | Philips Lumileds Lighting Company, Llc | Process For Preparing A Semiconductor Light-Emitting Device For Mounting |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2016204408A1 (ko) * | 2015-06-15 | 2016-12-22 | 엘지이노텍 주식회사 | 발광 소자 패키지 |
US10928015B2 (en) | 2015-06-15 | 2021-02-23 | Lg Innotek Co., Ltd. | Light-emitting diode package |
Also Published As
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WO2010027672A3 (en) | 2010-05-20 |
WO2010027672A2 (en) | 2010-03-11 |
JP2012516026A (ja) | 2012-07-12 |
US7973327B2 (en) | 2011-07-05 |
US20110171762A1 (en) | 2011-07-14 |
CN102132428A (zh) | 2011-07-20 |
US8048695B2 (en) | 2011-11-01 |
TWI419376B (zh) | 2013-12-11 |
EP2332187B1 (en) | 2016-08-10 |
CN102132428B (zh) | 2015-07-08 |
TW201027797A (en) | 2010-07-16 |
JP6010583B2 (ja) | 2016-10-19 |
US20100051984A1 (en) | 2010-03-04 |
JP2016167626A (ja) | 2016-09-15 |
KR20110051222A (ko) | 2011-05-17 |
EP2332187A4 (en) | 2013-05-29 |
JP5753494B2 (ja) | 2015-07-22 |
KR20150038604A (ko) | 2015-04-08 |
EP2332187A2 (en) | 2011-06-15 |
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