JP6920995B2 - 向上した色均一性を有する光源アッセンブリ - Google Patents
向上した色均一性を有する光源アッセンブリ Download PDFInfo
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- JP6920995B2 JP6920995B2 JP2017543923A JP2017543923A JP6920995B2 JP 6920995 B2 JP6920995 B2 JP 6920995B2 JP 2017543923 A JP2017543923 A JP 2017543923A JP 2017543923 A JP2017543923 A JP 2017543923A JP 6920995 B2 JP6920995 B2 JP 6920995B2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/54—Encapsulations having a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional radiating surfaces
- H05B33/22—Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of auxiliary dielectric or reflective layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85909—Post-treatment of the connector or wire bonding area
- H01L2224/8592—Applying permanent coating, e.g. protective coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0058—Processes relating to semiconductor body packages relating to optical field-shaping elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0091—Scattering means in or on the semiconductor body or semiconductor body package
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
- Non-Portable Lighting Devices Or Systems Thereof (AREA)
Description
state lighting)装置と、SSL装置によって放射された光を受け取るように配置され、受け取った光の一部を異なる波長に変換するように構成された波長変換素子とを有する光源アッセンブリに関する。本発明は、このような光源アッセンブリを製造する製造方法にも関する。
position variation)と呼ばれる。これは、典型的には中間出力発光ダイオードに関連する問題である。
図面に示されるように、層及び領域のサイズは、説明目的のために誇張されており、こうして、本発明の実施形態の一般的な構造を示すために提供される。同様の参照符号は、図面全体に亘って同様の要素を指す。
position variation)のために光が発光面6から出る位置に依存する。基板2、SSL装置3、及び波長変換素子4は共に、LEDパッケージ、例えば「Nichia NSSL
157」の名称で市販されているタイプのLEDパッケージを形成する。
imaging goniometer)を使用することによって行うことができる。眼の応答曲線X、Y及びZを模した少なくとも3つのカラーフィルタを備えたデジタルカメラを使用して、放射面の測色マップを測定することができる。次に、輝度L及び2つの色座標x_CIE及びy_CIEが、画像の各ピクセルについて、すなわちLED発光面の各位置について決定される。測定された色座標及び所望の色座標に応じて、局所補正が、計算され、後方散乱強度に変換される。
Claims (9)
- 光源アッセンブリであって、当該光源アッセンブリは、
固体照明装置と、
該固体照明装置によって放射された光を受け取るように配置され、該受け取った光の一部を異なる波長に変換するように構成された波長変換素子と、
該波長変換素子の発光面に置かれた散乱層であって、波長変換粒子を含む散乱層と、を有しており、
該散乱層は、前記光の一部を前記波長変換素子内に後方散乱するように構成され、前記発光面に直交する前記散乱層の厚さは、前記固体照明装置の中心からの距離に依存して減少し、それによって前記散乱層の後方散乱強度は、前記発光面に亘って変化し、前記発光面から放射される光の色の変化を低減させる、
光源アッセンブリ。 - 前記散乱層は、気泡、酸化チタン粒子、及び蛍光体粒子から構成されるグループから選択された散乱素子を含む、請求項1に記載の光源アッセンブリ。
- 前記波長変換素子及び前記散乱層は、同じ種類の波長変換粒子を含む、請求項1に記載の光源アッセンブリ。
- 前記波長変換粒子は、蛍光体粒子である、請求項1又は3に記載の光源アッセンブリ。
- 前記発光面から出る光の色は、前記光が前記発光面から出る位置に依存する、請求項1乃至4のいずれか一項に記載の光源アッセンブリ。
- 前記発光面は平坦である、請求項1乃至5のいずれか一項に記載の光源アッセンブリ。
- 光源アッセンブリの製造方法であって、当該製造方法は、
固体照明装置及び波長変換素子を提供するステップであって、前記波長変換素子は、前記固体照明装置によって放射された光を受け取るように配置され、該受け取った光の一部を異なる波長に変換するように構成される、提供するステップと、
前記波長変換素子の発光面から放射された光の色の変化を測定するステップと、
前記発光面に散乱層を適用するステップと、を含み、
前記散乱層は、前記光の一部を前記波長変換素子内に後方散乱するように構成され、前記散乱層の後方散乱強度は、前記発光面から放射される光の色の測定された変化を低減させるように、前記発光面に亘って変化するように選択される、
製造方法。 - 前記散乱層は、積層造形技術によって適用される、請求項7に記載の製造方法。
- 前記散乱層は、前記発光面に液滴の形態で塗布される、請求項7に記載の製造方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP15156052 | 2015-02-23 | ||
EP15156052.1 | 2015-02-23 | ||
PCT/EP2016/053237 WO2016135006A1 (en) | 2015-02-23 | 2016-02-16 | Light source assembly with improved color uniformity |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2018507557A JP2018507557A (ja) | 2018-03-15 |
JP6920995B2 true JP6920995B2 (ja) | 2021-08-18 |
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ID=52633071
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2017543923A Active JP6920995B2 (ja) | 2015-02-23 | 2016-02-16 | 向上した色均一性を有する光源アッセンブリ |
Country Status (7)
Country | Link |
---|---|
US (1) | US20180033920A1 (ja) |
EP (1) | EP3262695B1 (ja) |
JP (1) | JP6920995B2 (ja) |
KR (1) | KR102510808B1 (ja) |
CN (1) | CN107251242A (ja) |
TW (1) | TWI725012B (ja) |
WO (1) | WO2016135006A1 (ja) |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6493348B2 (ja) * | 2016-09-30 | 2019-04-03 | 日亜化学工業株式会社 | 発光装置 |
JP2018106928A (ja) * | 2016-12-27 | 2018-07-05 | 株式会社小糸製作所 | 車両用前照灯 |
DE102017101729A1 (de) * | 2017-01-30 | 2018-08-02 | Osram Opto Semiconductors Gmbh | Strahlungsemittierende Vorrichtung |
DE102018201236A1 (de) * | 2018-01-26 | 2019-08-01 | Osram Gmbh | Bestrahlungseinheit mit pumpstrahlungsquelle und konversionselement |
JP2019145739A (ja) * | 2018-02-23 | 2019-08-29 | 株式会社朝日ラバー | 光拡散膜付led発光装置、光拡散膜形成用インク及びled発光装置用光拡散シート |
KR102487795B1 (ko) * | 2018-04-24 | 2023-01-11 | 엘지디스플레이 주식회사 | 광원 패키지를 포함하는 백라이트 유닛 및 이를 이용한 표시 장치 |
US10865962B2 (en) | 2018-06-12 | 2020-12-15 | Stmicroelectronics (Grenoble 2) Sas | Protection mechanism for light source |
FR3085465B1 (fr) | 2018-08-31 | 2021-05-21 | St Microelectronics Grenoble 2 | Mecanisme de protection pour source lumineuse |
CN110594704B (zh) | 2018-06-12 | 2021-10-29 | 意法半导体(格勒诺布尔2)公司 | 光源的保护机构 |
US11211772B2 (en) | 2018-06-12 | 2021-12-28 | Stmicroelectronics (Grenoble 2) Sas | Protection mechanism for light source |
JP6741102B2 (ja) * | 2019-03-06 | 2020-08-19 | 日亜化学工業株式会社 | 発光装置 |
US11681090B2 (en) | 2019-05-30 | 2023-06-20 | Nichia Corporation | Light emitting module and method of manufacturing same |
CN110246990A (zh) * | 2019-06-27 | 2019-09-17 | 广东普加福光电科技有限公司 | 一种改善喷墨打印量子点层对蓝光吸收的方法 |
CN110716348B (zh) * | 2019-10-25 | 2022-04-15 | 业成科技(成都)有限公司 | 光源模组和液晶显示器 |
US20220173284A1 (en) * | 2020-12-01 | 2022-06-02 | Lumileds Llc | Laterally heterogenous wavelength-converting layer |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102007044597A1 (de) * | 2007-09-19 | 2009-04-02 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauteil |
US7884545B2 (en) * | 2008-03-24 | 2011-02-08 | Citizen Holdings Co., Ltd. | LED light source and method for adjusting chromaticity of LED light source |
JP5224890B2 (ja) * | 2008-04-21 | 2013-07-03 | シャープ株式会社 | 発光デバイスおよび発光デバイスの製造方法 |
JP2009266780A (ja) * | 2008-04-30 | 2009-11-12 | Toshiba Lighting & Technology Corp | 発光体および照明器具 |
US7973327B2 (en) * | 2008-09-02 | 2011-07-05 | Bridgelux, Inc. | Phosphor-converted LED |
EP2394496B1 (en) * | 2009-02-04 | 2014-04-02 | General Fusion, Inc. | Systems and methods for compressing plasma |
US8415692B2 (en) * | 2009-07-06 | 2013-04-09 | Cree, Inc. | LED packages with scattering particle regions |
CN102237469A (zh) * | 2010-04-29 | 2011-11-09 | 展晶科技(深圳)有限公司 | 发光二极管的封装结构 |
WO2012140542A1 (en) * | 2011-04-12 | 2012-10-18 | Koninklijke Philips Electronics N.V. | A luminescent converter, a phosphor enhanced light source or a luminaire having a cri larger than 80 |
JP2013175531A (ja) * | 2012-02-24 | 2013-09-05 | Stanley Electric Co Ltd | 発光装置 |
JP5960565B2 (ja) * | 2012-09-28 | 2016-08-02 | スタンレー電気株式会社 | 自動車ヘッドランプ用発光装置及びその製造方法 |
-
2016
- 2016-02-16 EP EP16704463.5A patent/EP3262695B1/en active Active
- 2016-02-16 JP JP2017543923A patent/JP6920995B2/ja active Active
- 2016-02-16 WO PCT/EP2016/053237 patent/WO2016135006A1/en active Application Filing
- 2016-02-16 US US15/552,584 patent/US20180033920A1/en not_active Abandoned
- 2016-02-16 CN CN201680011777.5A patent/CN107251242A/zh active Pending
- 2016-02-16 KR KR1020177026755A patent/KR102510808B1/ko active IP Right Grant
- 2016-02-22 TW TW105105169A patent/TWI725012B/zh active
Also Published As
Publication number | Publication date |
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EP3262695A1 (en) | 2018-01-03 |
TWI725012B (zh) | 2021-04-21 |
CN107251242A (zh) | 2017-10-13 |
WO2016135006A1 (en) | 2016-09-01 |
EP3262695B1 (en) | 2020-04-22 |
KR102510808B1 (ko) | 2023-03-17 |
KR20170123644A (ko) | 2017-11-08 |
JP2018507557A (ja) | 2018-03-15 |
US20180033920A1 (en) | 2018-02-01 |
TW201705543A (zh) | 2017-02-01 |
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