JP2014079879A - 耐腐食性cmpコンディショニング工具の作製および使用法 - Google Patents
耐腐食性cmpコンディショニング工具の作製および使用法 Download PDFInfo
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- 238000000034 method Methods 0.000 title claims abstract description 70
- 230000003750 conditioning effect Effects 0.000 title claims abstract description 43
- 238000005260 corrosion Methods 0.000 title description 13
- 230000007797 corrosion Effects 0.000 title description 12
- 238000000576 coating method Methods 0.000 claims abstract description 116
- 239000006061 abrasive grain Substances 0.000 claims abstract description 108
- 239000011248 coating agent Substances 0.000 claims abstract description 92
- 239000000758 substrate Substances 0.000 claims abstract description 72
- 239000002245 particle Substances 0.000 claims abstract description 70
- 238000005498 polishing Methods 0.000 claims abstract description 54
- 229910052751 metal Inorganic materials 0.000 claims abstract description 37
- 239000002184 metal Substances 0.000 claims abstract description 37
- 229910052731 fluorine Inorganic materials 0.000 claims abstract description 26
- 239000011737 fluorine Substances 0.000 claims abstract description 26
- 230000008569 process Effects 0.000 claims abstract description 25
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 24
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 23
- 238000004519 manufacturing process Methods 0.000 claims abstract description 21
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 19
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 17
- 238000000151 deposition Methods 0.000 claims abstract description 17
- 239000010703 silicon Substances 0.000 claims abstract description 17
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 16
- 239000001257 hydrogen Substances 0.000 claims abstract description 16
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 15
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 14
- 239000001301 oxygen Substances 0.000 claims abstract description 14
- 239000000203 mixture Substances 0.000 claims abstract description 10
- 238000001771 vacuum deposition Methods 0.000 claims abstract description 4
- 239000010410 layer Substances 0.000 claims description 63
- 239000000463 material Substances 0.000 claims description 47
- 238000005219 brazing Methods 0.000 claims description 36
- 239000002019 doping agent Substances 0.000 claims description 27
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 22
- 239000010432 diamond Substances 0.000 claims description 18
- 229910003460 diamond Inorganic materials 0.000 claims description 17
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 10
- 239000002356 single layer Substances 0.000 claims description 8
- 238000009713 electroplating Methods 0.000 claims description 3
- -1 fluorine ions Chemical class 0.000 claims description 3
- 238000005245 sintering Methods 0.000 claims description 3
- 125000004429 atom Chemical group 0.000 abstract description 9
- 150000003254 radicals Chemical class 0.000 abstract description 5
- 150000002500 ions Chemical class 0.000 abstract description 4
- 230000000694 effects Effects 0.000 abstract description 3
- 125000004435 hydrogen atom Chemical class [H]* 0.000 abstract description 3
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 abstract 2
- 239000000126 substance Substances 0.000 description 27
- 239000002114 nanocomposite Substances 0.000 description 16
- 230000008878 coupling Effects 0.000 description 12
- 238000010168 coupling process Methods 0.000 description 12
- 238000005859 coupling reaction Methods 0.000 description 12
- 238000000227 grinding Methods 0.000 description 11
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 9
- 239000011888 foil Substances 0.000 description 9
- 230000002209 hydrophobic effect Effects 0.000 description 9
- 239000002002 slurry Substances 0.000 description 9
- 239000000853 adhesive Substances 0.000 description 8
- 230000001070 adhesive effect Effects 0.000 description 8
- 229910045601 alloy Inorganic materials 0.000 description 8
- 239000000956 alloy Substances 0.000 description 8
- 230000032798 delamination Effects 0.000 description 8
- 230000003628 erosive effect Effects 0.000 description 8
- 229920000642 polymer Polymers 0.000 description 8
- 235000012431 wafers Nutrition 0.000 description 8
- 238000011282 treatment Methods 0.000 description 7
- 239000011651 chromium Substances 0.000 description 6
- 230000008021 deposition Effects 0.000 description 6
- 229910001092 metal group alloy Inorganic materials 0.000 description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 5
- 229910052804 chromium Inorganic materials 0.000 description 5
- 239000010949 copper Substances 0.000 description 5
- 230000007246 mechanism Effects 0.000 description 5
- 229910052721 tungsten Inorganic materials 0.000 description 5
- 239000003082 abrasive agent Substances 0.000 description 4
- 238000013461 design Methods 0.000 description 4
- 238000009826 distribution Methods 0.000 description 4
- 238000010304 firing Methods 0.000 description 4
- 150000002431 hydrogen Chemical class 0.000 description 4
- 150000002739 metals Chemical class 0.000 description 4
- 229910052759 nickel Inorganic materials 0.000 description 4
- 239000002243 precursor Substances 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 238000009825 accumulation Methods 0.000 description 3
- 238000003491 array Methods 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 238000006731 degradation reaction Methods 0.000 description 3
- 238000004090 dissolution Methods 0.000 description 3
- 238000010828 elution Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000012530 fluid Substances 0.000 description 3
- 239000010935 stainless steel Substances 0.000 description 3
- 229910001220 stainless steel Inorganic materials 0.000 description 3
- 229910052723 transition metal Inorganic materials 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- 229910005881 NiSi 2 Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000012790 adhesive layer Substances 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 239000000945 filler Substances 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 238000011068 loading method Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 125000004430 oxygen atom Chemical group O* 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 230000000737 periodic effect Effects 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 229920000052 poly(p-xylylene) Polymers 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 230000002028 premature Effects 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 238000012876 topography Methods 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 239000010965 430 stainless steel Substances 0.000 description 1
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- XMWRBQBLMFGWIX-UHFFFAOYSA-N C60 fullerene Chemical class C12=C3C(C4=C56)=C7C8=C5C5=C9C%10=C6C6=C4C1=C1C4=C6C6=C%10C%10=C9C9=C%11C5=C8C5=C8C7=C3C3=C7C2=C1C1=C2C4=C6C4=C%10C6=C9C9=C%11C5=C5C8=C3C3=C7C1=C1C2=C4C6=C2C9=C5C3=C12 XMWRBQBLMFGWIX-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910000990 Ni alloy Inorganic materials 0.000 description 1
- 229910018557 Si O Inorganic materials 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 238000005299 abrasion Methods 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 238000005054 agglomeration Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 239000007767 bonding agent Substances 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000003575 carbonaceous material Substances 0.000 description 1
- 230000000739 chaotic effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000008199 coating composition Substances 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000007872 degassing Methods 0.000 description 1
- 238000004070 electrodeposition Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 229910003472 fullerene Inorganic materials 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000005660 hydrophilic surface Effects 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 238000002386 leaching Methods 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 150000001247 metal acetylides Chemical class 0.000 description 1
- 229910001507 metal halide Inorganic materials 0.000 description 1
- 150000005309 metal halides Chemical class 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000001000 micrograph Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229910052755 nonmetal Inorganic materials 0.000 description 1
- 150000002843 nonmetals Chemical class 0.000 description 1
- KDLHZDBZIXYQEI-UHFFFAOYSA-N palladium Substances [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 230000003252 repetitive effect Effects 0.000 description 1
- 229910052702 rhenium Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Inorganic materials [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 239000012815 thermoplastic material Substances 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910021654 trace metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B53/00—Devices or means for dressing or conditioning abrasive surfaces
- B24B53/017—Devices or means for dressing, cleaning or otherwise conditioning lapping tools
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B53/00—Devices or means for dressing or conditioning abrasive surfaces
- B24B53/12—Dressing tools; Holders therefor
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D18/00—Manufacture of grinding tools or other grinding devices, e.g. wheels, not otherwise provided for
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D3/00—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents
- B24D3/02—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent
- B24D3/04—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent and being essentially inorganic
- B24D3/06—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent and being essentially inorganic metallic or mixture of metals with ceramic materials, e.g. hard metals, "cermets", cements
- B24D3/08—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent and being essentially inorganic metallic or mixture of metals with ceramic materials, e.g. hard metals, "cermets", cements for close-grained structure, e.g. using metal with low melting point
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- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Inorganic Chemistry (AREA)
- Ceramic Engineering (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Grinding-Machine Dressing And Accessory Apparatuses (AREA)
- Polishing Bodies And Polishing Tools (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
【解決手段】CMPパッドコンディショニング用の研摩工具の製作方法であって、金属接合材によって基板に結合された砥粒を含むCMPコンディショナーを、a)CMPコンディショナーを真空堆積チャンバ内に位置決めするステップと、b)炭素、ケイ素、酸素、水素およびフッ素を含有する組成物を、炭素、ケイ素、酸素、水素およびフッ素のイオン、原子またはラジカルを含むクラスターレス粒子ビームの共堆積によって、その上に堆積させるステップであって、その場合、各粒子種の平均自由行程は、その粒子源とコンディショナーの成長粒子被膜表面との間の距離を超えるステップと、を含むプロセスによって被膜処理するステップを含む、製作方法。
【選択図】図1
Description
本願は、(i)「耐腐食性CMPコンディショニング工具並びにその作製および使用法(Corrosion Resistant CMP Conditioning Tools and Methods for Making and Using Same)」なる表題で2009年6月2日に出願された米国仮特許出願第61/183,284号、および、(ii)「化学機械平坦化パッドコンディショナーとして使用するための研摩工具(Abrasive Tool for Use as a Chemical Mechanical Planarization Pad Conditioner)」なる表題で2009年8月21日に出願された米国仮特許出願第61/235,980号明細書の、米国特許法第119条(e)項に基づく利益を主張するものである。この両仮特許出願の内容は、参照によってその全体が本願に組み込まれる。
試験は、NiおよびCrに対する溶出レベルを評価するために行われた。F−DNC被膜を含まないCMPドレッサーに比べて、本発明の実施形態による疎水性CMPドレッサーにおいて、これらのレベルが大幅に低下することが判明した。7日間の浸漬後のタングステンスラリーに対するマイクログラム/ml(ppm)単位の元素溶出を示す結果を、次の表1に示す。
厚さ2.5μmの疎水性F−DNC被膜を、430ステンレス鋼上に65μm〜85μmのサイズ範囲のダイヤモンドによって作製されたCMPドレッサーの作業表面上に堆積させた。被膜は、ドイツHamburgのKruss GmbH社製のDSA100型液滴形状分析システム(Drop shape Analysis System)によって測定した接触角として約108°の接触角を有する。そのデータを図5に示す。
工具は、本明細書に記載したような2つの作業表面と1つのプレート(ホルダー)とを備えた研摩物品を含むものであった。両作業表面に対してDLC被膜処理を施した。被膜の厚さは1.5ミクロン(+/−10%)であった。この工具は、従来型のロウ付けまたは焼結CMPドレッサー製品と比べた場合、化学的溶出が低いことを示した。この工具は、例えばCuおよび/またはWのような金属のCMP環境と、例えば、層間絶縁膜(ILD)または浅溝型素子分離(STI)のような酸化物のCMP環境との両者において使用可能である。
Claims (12)
- CMPパッドコンディショニング用の研摩工具の製作方法であって、
金属接合材によって基板に結合された砥粒を含むCMPコンディショナーを、次のステップを含むプロセスによって被膜処理するステップ、すなわち、
a)CMPコンディショナーを真空堆積チャンバ内に位置決めするステップと、
b)炭素、ケイ素、酸素、水素およびフッ素を含有する組成物を、炭素、ケイ素、酸素、水素およびフッ素のイオン、原子またはラジカルを含むクラスターレス粒子ビームの共堆積によって、その上に堆積させるステップであって、その場合、各粒子種の平均自由行程は、その粒子源とコンディショナーの成長粒子被膜表面との間の距離を超えるステップと、
を含むプロセスによって被膜処理するステップを含む、製作方法。 - 工具によってCMPパッドの表面をドレッシングするステップを含むCMPパッドのコンディショニング方法であって、前記工具は、(a)金属接合材によって基板に結合された砥粒と、(b)工具の1つ以上の表面における被膜とを含み、この場合、前記砥粒は、選択された最大直径および選択されたサイズ範囲を有し、かつ、前記基板に対して前記接合材によって単一層アレイの形で接着されるコンディショニング方法において、前記砥粒が、前記アレイにおいて、各砥粒の回りの排他的領域であって、所望の砥粒の粒度の最大直径を超える最小直径を有する排他的領域を有する非一様なパターンに従って配向される、ことを特徴とするコンディショニング方法。
- 次のステップ、すなわち、
研摩物品をドレッシング機械に連結するステップであって、前記研摩物品は、第1主表面および前記第1主表面と反対側の第2主表面を有する基板を含み、さらに、前記研摩物品は、前記基板の第1主表面における第1研摩表面と、前記基板の第2主表面における第2研摩表面とを含み、前記研摩表面の少なくとも1つは被膜処理され、さらに、前記研摩物品は、前記第1研摩表面を露出するようにドレッシング機械に装着されるステップと、
前記第1研摩表面を第1CMPパッドの表面に接触させて、前記第1CMPパッドをコンディショニングするために第1CMPパッドを前記第1研摩表面に対して動かすステップと、
前記第2研摩表面を露出するために研摩物品を逆転するステップと、
前記第2研摩表面を第2CMPパッドの表面に接触させて、前記第2CMPパッドをコンディショニングするために第2CMPパッドを前記第2研摩表面に対して動かすステップと、
を含むCMPパッドのドレッシング方法。 - 前記砥粒が、ロウ付け、電気メッキ、あるいは焼結によって前記基板に結合される、請求項1に記載の製作方法。
- すべての金属含有表面が被膜処理される、請求項1に記載の製作方法。
- 前記砥粒が、選択された最大直径および選択されたサイズ範囲を有し、かつ、前記基板に対して前記接合材によって単一層アレイの形で接着される請求項1に記載の製作方法において、前記砥粒が、前記アレイにおいて、各砥粒の回りの排他的領域であって、所望の砥粒の粒度の最大直径を超える最小直径を有する排他的領域を有する非一様なパターンに従って配向される、ことを特徴とする製作方法。
- 各砥粒が、次のように規定されたアレイ上の点に配置される、すなわち、2次元平面上にランダムに選択された一連の点を、各点が前記砥粒の最大直径の少なくとも1.5倍である最小値(k)だけ互いに分離されるように制限することによって規定された前記アレイ上の点に配置される、請求項6に記載の製作方法。
- 各砥粒が、次のステップによって規定されたアレイ上の点に配置される、すなわち、
(a)一連の座標値の対(x1、y1)を、少なくとも1つの軸に沿う前記座標値が数値の順序に制限されるように制限するステップであって、その場合、各値は次の値と一定量だけ異なるステップと、
(b)1組の選択されたx値および1組の選択されたy値を生成するために、各選択された座標値の対(x1、y1)を切り離すステップと、
(c)前記x値およびy値の組から一連のランダムな座標値の対(x、y)をランダムに選択するステップであって、各対は、任意の隣接する座標値の対の座標値からある最小値(k)だけ異なる座標値を有するステップと、
(d)各砥粒の回りの前記排他的領域を生成するために、十分な対を有する前記ランダム選択の座標値の対のアレイであってグラフ上の点としてプロットされたアレイを発生させるステップと、
によって規定されたアレイ上の点に配置される、請求項6に記載の製作方法。 - 前記砥粒が単一のダイヤモンド粒子である、請求項1に記載の製作方法。
- 前記被膜が1つ以上の追加ドーパントを含む、請求項1に記載の製作方法。
- 前記被膜が2つ以上の層を含む、請求項1に記載の製作方法。
- 前記被膜の接触角が約90°〜約120°の範囲内である、請求項1に記載の製作方法。
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- 2010-06-01 KR KR1020127000004A patent/KR101291528B1/ko active IP Right Grant
- 2010-06-01 WO PCT/US2010/036895 patent/WO2010141464A2/en active Application Filing
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- 2010-06-01 CN CN2010800303837A patent/CN102484054A/zh active Pending
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CN102484054A (zh) | 2012-05-30 |
IL216708A0 (en) | 2012-02-29 |
JP5745108B2 (ja) | 2015-07-08 |
WO2010141464A2 (en) | 2010-12-09 |
KR20120027449A (ko) | 2012-03-21 |
WO2010141464A3 (en) | 2011-05-05 |
EP2438609A2 (en) | 2012-04-11 |
MY155563A (en) | 2015-10-30 |
CA2764358A1 (en) | 2010-12-09 |
US20100330886A1 (en) | 2010-12-30 |
JP2012528735A (ja) | 2012-11-15 |
EP2438609A4 (en) | 2016-03-09 |
JP5453526B2 (ja) | 2014-03-26 |
US8905823B2 (en) | 2014-12-09 |
KR101291528B1 (ko) | 2013-08-09 |
SG176629A1 (en) | 2012-01-30 |
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