JP2014011462A5 - - Google Patents

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JP2014011462A5
JP2014011462A5 JP2013132779A JP2013132779A JP2014011462A5 JP 2014011462 A5 JP2014011462 A5 JP 2014011462A5 JP 2013132779 A JP2013132779 A JP 2013132779A JP 2013132779 A JP2013132779 A JP 2013132779A JP 2014011462 A5 JP2014011462 A5 JP 2014011462A5
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Japan
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barrier layer
layer
aluminum
gate terminal
resistive
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JP2013132779A
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Japanese (ja)
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JP6335444B2 (ja
JP2014011462A (ja
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Priority claimed from US13/535,127 external-priority patent/US8975664B2/en
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JP2013132779A 2012-06-27 2013-06-25 再成長構造を用いたｉｉｉ族窒化物トランジスタ Expired - Fee Related JP6335444B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/535,127 US8975664B2 (en) 2012-06-27 2012-06-27 Group III-nitride transistor using a regrown structure
US13/535,127 2012-06-27

Related Child Applications (1)

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JP2017243108A Division JP6554530B2 (ja) 2012-06-27 2017-12-19 再成長構造を用いたｉｉｉ族窒化物トランジスタ

Publications (3)

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JP2014011462A JP2014011462A (ja) 2014-01-20
JP2014011462A5 true JP2014011462A5 (enExample) 2016-07-14
JP6335444B2 JP6335444B2 (ja) 2018-05-30

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JP2013132779A Expired - Fee Related JP6335444B2 (ja) 2012-06-27 2013-06-25 再成長構造を用いたｉｉｉ族窒化物トランジスタ
JP2017243108A Expired - Fee Related JP6554530B2 (ja) 2012-06-27 2017-12-19 再成長構造を用いたｉｉｉ族窒化物トランジスタ

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JP2017243108A Expired - Fee Related JP6554530B2 (ja) 2012-06-27 2017-12-19 再成長構造を用いたｉｉｉ族窒化物トランジスタ

Country Status (4)

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US (1) US8975664B2 (enExample)
JP (2) JP6335444B2 (enExample)
DE (1) DE102013010487A1 (enExample)
TW (1) TWI610438B (enExample)

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