JP2013540094A - 炭化珪素単結晶の製造方法及び装置 - Google Patents
炭化珪素単結晶の製造方法及び装置 Download PDFInfo
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- 239000013078 crystal Substances 0.000 title claims abstract description 117
- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 104
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 93
- 238000000034 method Methods 0.000 title claims abstract description 36
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 108
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 108
- 239000010703 silicon Substances 0.000 claims abstract description 108
- 238000004519 manufacturing process Methods 0.000 claims abstract description 38
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 29
- 239000000956 alloy Substances 0.000 claims abstract description 29
- 229910052751 metal Inorganic materials 0.000 claims abstract description 25
- 239000002184 metal Substances 0.000 claims abstract description 23
- 238000006243 chemical reaction Methods 0.000 claims abstract description 19
- 239000000654 additive Substances 0.000 claims abstract description 13
- 230000000996 additive effect Effects 0.000 claims abstract description 13
- 229910018540 Si C Inorganic materials 0.000 claims abstract description 12
- 239000000758 substrate Substances 0.000 claims abstract description 12
- 230000007423 decrease Effects 0.000 claims abstract description 8
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 14
- 239000000463 material Substances 0.000 claims description 12
- 229910052799 carbon Inorganic materials 0.000 claims description 10
- 239000000203 mixture Substances 0.000 claims description 4
- 238000010000 carbonizing Methods 0.000 abstract 1
- 239000007789 gas Substances 0.000 description 25
- 238000010438 heat treatment Methods 0.000 description 9
- 239000002994 raw material Substances 0.000 description 8
- 238000003860 storage Methods 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 5
- 229910002804 graphite Inorganic materials 0.000 description 4
- 239000010439 graphite Substances 0.000 description 4
- 238000005092 sublimation method Methods 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 239000011261 inert gas Substances 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- 230000002401 inhibitory effect Effects 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 239000007791 liquid phase Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 238000000815 Acheson method Methods 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000003763 carbonization Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 238000002109 crystal growth method Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 229910052754 neon Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 230000008022 sublimation Effects 0.000 description 1
- 238000000859 sublimation Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/002—Continuous growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/001—Continuous growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
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- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B17/00—Single-crystal growth onto a seed which remains in the melt during growth, e.g. Nacken-Kyropoulos method
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B19/00—Liquid-phase epitaxial-layer growth
- C30B19/02—Liquid-phase epitaxial-layer growth using molten solvents, e.g. flux
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- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B19/00—Liquid-phase epitaxial-layer growth
- C30B19/10—Controlling or regulating
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- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/36—Carbides
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02529—Silicon carbide
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02623—Liquid deposition
- H01L21/02628—Liquid deposition using solutions
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1032—Seed pulling
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1032—Seed pulling
- Y10T117/1056—Seed pulling including details of precursor replenishment
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- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
【選択図】図2
Description
2、12 るつぼ
3、13 基板
4、14 種結晶固定軸
5、15 発熱体
6、16 成長炉
7、17 下部板
51 シリコン供給原料供給管
52 シリコン供給原料投入弁
53 ガス投入弁
54 ガス連結路
55 シリコン供給原料貯蔵ホッパー
56 シリコン供給原料投入口
57 圧力計
Claims (10)
- 少なくとも1種の添加金属を含有するSi‐C合金溶液に炭化珪素成長用種結晶基板を接触させ、炭化珪素成長用種結晶上に炭化珪素単結晶を成長させる方法であって、
反応の経過につれてSiと添加金属のモル比が初期に設定した値より減少すると合金溶液中にシリコン供給原料を投入する、炭化珪素単結晶の製造方法。 - シリコン供給原料としては、シリコン、シリコンと炭素の混合物、及び炭化珪素から選択される少なくとも1種以上のものを用いる、請求項1に記載の炭化珪素単結晶の製造方法。
- シリコン供給原料の投入量は、反応の経過につれて炭化珪素単結晶の成長厚さに基づいた合金溶液中のシリコンのモル減少量を算出して決定する、請求項1に記載の炭化珪素単結晶の製造方法。
- シリコン供給原料の投入は、るつぼ内のシリコン元素の量を基準として0.02〜15重量%の量で多数回行われる、請求項1乃至3の何れか一項に記載の炭化珪素単結晶の製造方法。
- シリコン供給原料の投入は、るつぼ内の雰囲気ガスと同一の雰囲気ガスの存在下で行われる、請求項1に記載の炭化珪素単結晶の製造方法。
- シリコン供給原料の投入は、るつぼ内の圧力より高い圧力下で行われる、請求項4に記載の炭化珪素単結晶の製造方法。
- 成長炉内の、少なくとも1種の添加金属を含有するSi‐C合金溶液を収容するるつぼ、及び炭化珪素成長用種結晶基板が備えられる種結晶固定軸を含む溶液成長法を用いる炭化珪素単結晶の製造装置であって、
シリコン供給原料をるつぼ内に投入するためのシリコン供給部を含む、炭化珪素単結晶の製造装置。 - シリコン供給部は、種結晶固定軸の少なくとも一部分を貫通して形成される管状の供給管を含む、請求項7に記載の炭化珪素単結晶の製造装置。
- シリコン供給部は、種結晶固定軸と別に形成される管状の供給管を含む、請求項7に記載の炭化珪素単結晶の製造装置。
- シリコン供給部は、雰囲気ガスを供給するためのガス投入管を含む、請求項7に記載の炭化珪素単結晶の製造装置。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
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KR10-2010-0103046 | 2010-10-21 | ||
KR1020100103046A KR101690490B1 (ko) | 2010-10-21 | 2010-10-21 | 탄화규소 단결정의 제조방법 및 장치 |
PCT/KR2011/007701 WO2012053782A2 (en) | 2010-10-21 | 2011-10-17 | Process for growing silicon carbide single crystal and device for the same |
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JP2013540094A true JP2013540094A (ja) | 2013-10-31 |
JP5827338B2 JP5827338B2 (ja) | 2015-12-02 |
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US (1) | US9359690B2 (ja) |
EP (1) | EP2630278B1 (ja) |
JP (1) | JP5827338B2 (ja) |
KR (1) | KR101690490B1 (ja) |
CN (1) | CN103180493B (ja) |
WO (1) | WO2012053782A2 (ja) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
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WO2015115543A1 (ja) * | 2014-01-29 | 2015-08-06 | 京セラ株式会社 | 結晶の製造方法 |
WO2016038845A1 (ja) * | 2014-09-11 | 2016-03-17 | 新日鐵住金株式会社 | p型SiC単結晶の製造方法 |
JP2016121028A (ja) * | 2014-12-24 | 2016-07-07 | 京セラ株式会社 | 結晶の製造方法 |
WO2016143398A1 (ja) * | 2015-03-06 | 2016-09-15 | 京セラ株式会社 | 結晶の製造方法 |
KR20180091344A (ko) * | 2017-02-06 | 2018-08-16 | 주식회사 엘지화학 | 실리콘카바이드 단결정의 제조 방법 |
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JP6533716B2 (ja) | 2015-08-06 | 2019-06-19 | 信越化学工業株式会社 | SiC単結晶の製造方法 |
JP6290973B2 (ja) * | 2016-05-16 | 2018-03-07 | 京セラ株式会社 | 保持体、結晶製造装置および結晶の製造方法 |
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CN115976625B (zh) * | 2023-02-14 | 2024-03-05 | 中国科学院物理研究所 | 用于制备3C-SiC单晶的方法 |
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WO2015115543A1 (ja) * | 2014-01-29 | 2015-08-06 | 京セラ株式会社 | 結晶の製造方法 |
JP2016179942A (ja) * | 2014-01-29 | 2016-10-13 | 京セラ株式会社 | 結晶の製造方法 |
JP6014258B2 (ja) * | 2014-01-29 | 2016-10-25 | 京セラ株式会社 | 結晶の製造方法 |
JP2017024985A (ja) * | 2014-01-29 | 2017-02-02 | 京セラ株式会社 | 結晶の製造方法 |
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JP2016121028A (ja) * | 2014-12-24 | 2016-07-07 | 京セラ株式会社 | 結晶の製造方法 |
WO2016143398A1 (ja) * | 2015-03-06 | 2016-09-15 | 京セラ株式会社 | 結晶の製造方法 |
JPWO2016143398A1 (ja) * | 2015-03-06 | 2017-04-27 | 京セラ株式会社 | 結晶の製造方法 |
KR20180091344A (ko) * | 2017-02-06 | 2018-08-16 | 주식회사 엘지화학 | 실리콘카바이드 단결정의 제조 방법 |
KR102089460B1 (ko) * | 2017-02-06 | 2020-03-16 | 주식회사 엘지화학 | 실리콘카바이드 단결정의 제조 방법 |
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US9359690B2 (en) | 2016-06-07 |
EP2630278A4 (en) | 2014-06-18 |
KR101690490B1 (ko) | 2016-12-28 |
WO2012053782A2 (en) | 2012-04-26 |
CN103180493A (zh) | 2013-06-26 |
CN103180493B (zh) | 2016-08-17 |
US20130305982A1 (en) | 2013-11-21 |
KR20120041549A (ko) | 2012-05-02 |
EP2630278B1 (en) | 2015-10-07 |
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WO2012053782A3 (en) | 2012-07-19 |
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