JP2013528930A5 - - Google Patents

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JP2013528930A5
JP2013528930A5 JP2013504077A JP2013504077A JP2013528930A5 JP 2013528930 A5 JP2013528930 A5 JP 2013528930A5 JP 2013504077 A JP2013504077 A JP 2013504077A JP 2013504077 A JP2013504077 A JP 2013504077A JP 2013528930 A5 JP2013528930 A5 JP 2013528930A5
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electrical connections
gold bumps
substrate vias
substrate
interconnectivity
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JP2013504077A
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JP6096109B2 (ja
JP2013528930A (ja
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Priority claimed from PCT/CA2011/000396 external-priority patent/WO2011127568A1/en
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JP2013504077A 2010-04-13 2011-04-13 アイランドトポロジを用いる高密度窒化ガリウム装置 Active JP6096109B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US32347010P 2010-04-13 2010-04-13
US61/323,470 2010-04-13
PCT/CA2011/000396 WO2011127568A1 (en) 2010-04-13 2011-04-13 High density gallium nitride devices using island topology

Publications (3)

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JP2013528930A JP2013528930A (ja) 2013-07-11
JP2013528930A5 true JP2013528930A5 (enExample) 2017-02-09
JP6096109B2 JP6096109B2 (ja) 2017-03-15

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JP2013504077A Active JP6096109B2 (ja) 2010-04-13 2011-04-13 アイランドトポロジを用いる高密度窒化ガリウム装置

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US (1) US8791508B2 (enExample)
EP (1) EP2559064A4 (enExample)
JP (1) JP6096109B2 (enExample)
KR (1) KR20130088743A (enExample)
CN (1) CN102893392B (enExample)
AU (1) AU2011241423A1 (enExample)
CA (1) CA2796155C (enExample)
WO (1) WO2011127568A1 (enExample)

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