JP2011222805A5 - - Google Patents

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Publication number
JP2011222805A5
JP2011222805A5 JP2010091291A JP2010091291A JP2011222805A5 JP 2011222805 A5 JP2011222805 A5 JP 2011222805A5 JP 2010091291 A JP2010091291 A JP 2010091291A JP 2010091291 A JP2010091291 A JP 2010091291A JP 2011222805 A5 JP2011222805 A5 JP 2011222805A5
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JP
Japan
Prior art keywords
solder
covers
side surfaces
dielectric constant
low dielectric
Prior art date
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Granted
Application number
JP2010091291A
Other languages
English (en)
Japanese (ja)
Other versions
JP5212417B2 (ja
JP2011222805A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2010091291A priority Critical patent/JP5212417B2/ja
Priority claimed from JP2010091291A external-priority patent/JP5212417B2/ja
Priority to US12/910,231 priority patent/US8558361B2/en
Priority to DE102011005690.4A priority patent/DE102011005690B4/de
Priority to CN2011100736492A priority patent/CN102214622B/zh
Publication of JP2011222805A publication Critical patent/JP2011222805A/ja
Publication of JP2011222805A5 publication Critical patent/JP2011222805A5/ja
Application granted granted Critical
Publication of JP5212417B2 publication Critical patent/JP5212417B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2010091291A 2010-04-12 2010-04-12 パワー半導体モジュール Active JP5212417B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2010091291A JP5212417B2 (ja) 2010-04-12 2010-04-12 パワー半導体モジュール
US12/910,231 US8558361B2 (en) 2010-04-12 2010-10-22 Power semiconductor module
DE102011005690.4A DE102011005690B4 (de) 2010-04-12 2011-03-17 Leistungshalbleitermodul
CN2011100736492A CN102214622B (zh) 2010-04-12 2011-03-25 功率半导体模块

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010091291A JP5212417B2 (ja) 2010-04-12 2010-04-12 パワー半導体モジュール

Publications (3)

Publication Number Publication Date
JP2011222805A JP2011222805A (ja) 2011-11-04
JP2011222805A5 true JP2011222805A5 (enExample) 2012-07-26
JP5212417B2 JP5212417B2 (ja) 2013-06-19

Family

ID=44658269

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010091291A Active JP5212417B2 (ja) 2010-04-12 2010-04-12 パワー半導体モジュール

Country Status (4)

Country Link
US (1) US8558361B2 (enExample)
JP (1) JP5212417B2 (enExample)
CN (1) CN102214622B (enExample)
DE (1) DE102011005690B4 (enExample)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5328827B2 (ja) * 2010-05-28 2013-10-30 三菱電機株式会社 パワーモジュール構造、その構造を有するパワーモジュール、およびその構造の製造方法
KR101983420B1 (ko) * 2011-12-12 2019-05-29 미쓰비시 마테리알 가부시키가이샤 파워 모듈용 기판, 히트 싱크가 형성된 파워 모듈용 기판, 파워 모듈, 플럭스 성분 침입 방지층 형성용 페이스트 및 접합체의 접합 방법
US8847328B1 (en) * 2013-03-08 2014-09-30 Ixys Corporation Module and assembly with dual DC-links for three-level NPC applications
JP6138277B2 (ja) * 2013-12-17 2017-05-31 三菱電機株式会社 パワー半導体モジュール
BR112016027345B1 (pt) 2014-05-30 2021-08-03 Eltek S.P.A Sensor de nível para detecção do nível de um meio contido em um reservatório, método para controlar um sensor de nível e reservatório
BR112017005014B1 (pt) 2014-09-15 2021-03-16 Eltek S.P.A. sensor para detectar o nível de um meio contido em um recipiente, método para controlar um sensor para detectar o nível de um meio contido em um recipiente e recipiente
US10533887B2 (en) 2014-09-15 2020-01-14 Eltek S.P.A. Sensor for detecting the level of a medium
WO2018029801A1 (ja) * 2016-08-10 2018-02-15 三菱電機株式会社 半導体装置
JP6719569B2 (ja) 2016-09-21 2020-07-08 三菱電機株式会社 半導体装置および電力変換装置
JP6809294B2 (ja) * 2017-03-02 2021-01-06 三菱電機株式会社 パワーモジュール
JP6891075B2 (ja) 2017-08-30 2021-06-18 株式会社 日立パワーデバイス パワー半導体モジュール
US20210391299A1 (en) * 2018-12-27 2021-12-16 Mitsubishi Electric Corporation Semiconductor device, method for manufacturing semiconductor device, and power conversion device

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Publication number Priority date Publication date Assignee Title
US4855872A (en) * 1987-08-13 1989-08-08 General Electric Company Leadless ceramic chip carrier printed wiring board adapter
DE4341269A1 (de) 1993-12-03 1995-06-22 Bosch Gmbh Robert Gleichrichterdiode
EP0706221B8 (en) 1994-10-07 2008-09-03 Hitachi, Ltd. Semiconductor device comprising a plurality of semiconductor elements
JPH08125071A (ja) 1994-10-25 1996-05-17 Fuji Electric Co Ltd 半導体装置
JPH1187567A (ja) 1997-09-02 1999-03-30 Toshiba Corp 半導体装置
TW408453B (en) * 1997-12-08 2000-10-11 Toshiba Kk Package for semiconductor power device and method for assembling the same
JP3440824B2 (ja) * 1998-05-28 2003-08-25 株式会社日立製作所 半導体装置
US6139957A (en) 1998-08-28 2000-10-31 Commscope, Inc. Of North Carolina Conductor insulated with foamed fluoropolymer and method of making same
FR2800017B1 (fr) 1999-10-25 2002-01-11 Valeo Thermique Moteur Sa Dispositif de refroidissement pour un vehicule a moteur electrique alimente par une pile a combustible
JP2002076190A (ja) 2000-08-24 2002-03-15 Toshiba Corp 回路基板、半導体装置及びこれらの製造方法
JP2004200306A (ja) * 2002-12-17 2004-07-15 Hitachi Ltd 半導体モジュール
JP4253183B2 (ja) 2002-12-27 2009-04-08 三菱電機株式会社 電力用半導体モジュール
JP2005210006A (ja) * 2004-01-26 2005-08-04 Toshiba Corp 半導体装置
JP4319591B2 (ja) * 2004-07-15 2009-08-26 株式会社日立製作所 半導体パワーモジュール
JP2006318980A (ja) * 2005-05-10 2006-11-24 Toyota Industries Corp 半導体装置および半導体装置の製造方法
JP4609296B2 (ja) * 2005-12-05 2011-01-12 株式会社日立製作所 高温半田及び高温半田ペースト材、及びそれを用いたパワー半導体装置
US8004075B2 (en) 2006-04-25 2011-08-23 Hitachi, Ltd. Semiconductor power module including epoxy resin coating
JP4525636B2 (ja) * 2006-06-09 2010-08-18 株式会社日立製作所 パワーモジュール
JP4735446B2 (ja) 2006-07-04 2011-07-27 三菱電機株式会社 半導体装置
JP5168866B2 (ja) 2006-09-28 2013-03-27 三菱電機株式会社 パワー半導体モジュール
JP4972503B2 (ja) * 2007-09-11 2012-07-11 株式会社日立製作所 半導体パワーモジュール
JP2009070869A (ja) 2007-09-11 2009-04-02 Panasonic Corp 半導体発光装置

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