CN102214622B - 功率半导体模块 - Google Patents

功率半导体模块 Download PDF

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Publication number
CN102214622B
CN102214622B CN2011100736492A CN201110073649A CN102214622B CN 102214622 B CN102214622 B CN 102214622B CN 2011100736492 A CN2011100736492 A CN 2011100736492A CN 201110073649 A CN201110073649 A CN 201110073649A CN 102214622 B CN102214622 B CN 102214622B
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solder
surface electrode
power semiconductor
dielectric constant
insulating substrate
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CN102214622A (zh
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川口安人
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H01L2924/13055—Insulated gate bipolar transistor [IGBT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161—Cap
    • H01L2924/1615—Shape
    • H01L2924/16195—Flat cap [not enclosing an internal cavity]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

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  • Engineering & Computer Science (AREA)
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  • Power Engineering (AREA)
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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Dispersion Chemistry (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Semiconductor Integrated Circuits (AREA)
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KR101983420B1 (ko) * 2011-12-12 2019-05-29 미쓰비시 마테리알 가부시키가이샤 파워 모듈용 기판, 히트 싱크가 형성된 파워 모듈용 기판, 파워 모듈, 플럭스 성분 침입 방지층 형성용 페이스트 및 접합체의 접합 방법
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JP6138277B2 (ja) * 2013-12-17 2017-05-31 三菱電機株式会社 パワー半導体モジュール
US10422681B2 (en) 2014-05-30 2019-09-24 Eltek S.P.A. Sensor for detecting the level of a medium
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JP6642719B2 (ja) * 2016-08-10 2020-02-12 三菱電機株式会社 半導体装置
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JP6809294B2 (ja) * 2017-03-02 2021-01-06 三菱電機株式会社 パワーモジュール
JP6891075B2 (ja) * 2017-08-30 2021-06-18 株式会社 日立パワーデバイス パワー半導体モジュール
JP6826665B2 (ja) * 2018-12-27 2021-02-03 三菱電機株式会社 半導体装置、半導体装置の製造方法及び電力変換装置

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