WO2013065462A1 - 半導体装置及びその製造方法 - Google Patents

半導体装置及びその製造方法 Download PDF

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Publication number
WO2013065462A1
WO2013065462A1 PCT/JP2012/076241 JP2012076241W WO2013065462A1 WO 2013065462 A1 WO2013065462 A1 WO 2013065462A1 JP 2012076241 W JP2012076241 W JP 2012076241W WO 2013065462 A1 WO2013065462 A1 WO 2013065462A1
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Prior art keywords
metal substrate
resin
circuit board
heat spreader
flexible circuit
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PCT/JP2012/076241
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English (en)
French (fr)
Inventor
純司 鶴岡
誠二 安井
山戸　修
貴之 前田
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アイシン・エィ・ダブリュ株式会社
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Publication of WO2013065462A1 publication Critical patent/WO2013065462A1/ja

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Definitions

  • the present disclosure relates to a semiconductor device including a flexible circuit board and a manufacturing method thereof.
  • a ceramic substrate in contact with a radiator a metal member in contact with the ceramic substrate, an electronic component mounted on the metal member, and an electronic component and a bonding wire disposed outside the ceramic substrate.
  • a semiconductor device having an electrode (control terminal) that is electrically connected and communicates with the outside is known (see, for example, Patent Document 1).
  • an object of the present disclosure is to provide a semiconductor device and a method for manufacturing the same that can appropriately prevent the resin from propagating outside the substrate through the flexible circuit board.
  • a metal substrate A semiconductor element disposed on the metal substrate; A flexible circuit board having one end disposed on the metal substrate and electrically connected to the semiconductor element, wherein the flexible circuit board extends beyond an edge of the metal substrate and extends outside the metal substrate.
  • a semiconductor device is provided.
  • FIG. 1 is a main cross-sectional view of a semiconductor device 1;
  • FIG. 1 is a view additionally showing a resin wall 70 in FIG. 1.
  • FIG. 1 is a view additionally showing a resin wall portion 70 and a resin sealing portion 72 in FIG. It is a figure which shows the comparative example which is not provided with the resin wall part.
  • FIG. 1 is a perspective view showing a main part of a semiconductor device 1 according to an embodiment.
  • FIG. 2 is a main cross-sectional view of the semiconductor device 1.
  • illustration of the insulating layer 30, the heat sink 40, the resin wall portion 70, and the resin sealing portion 72 of the semiconductor device 1 shown in FIG. 2 is omitted for convenience.
  • the vertical direction of the semiconductor device 1 differs depending on the mounting state of the semiconductor device 1, but hereinafter, for convenience, the semiconductor chip 10 side is set upward with respect to the heat spreader 20 of the semiconductor device 1.
  • “outside” and “inside” are based on the center of the heat spreader 20 as viewed from a plane perpendicular to the upper surface of the heat spreader 20. That is, “outside” refers to the side away from the center of the heat spreader 20 when viewed from the surface, and “inside” refers to the side toward the center of the heat spreader 20 when viewed from the surface. It should be noted that the center of the heat spreader 20 may be approximately, and is not of a nature that should be strictly determined.
  • the semiconductor device 1 may constitute, for example, an inverter for driving a motor used in a hybrid vehicle or an electric vehicle.
  • the semiconductor device 1 includes a semiconductor chip 10, a heat spreader 20, an insulating layer 30, a heat sink 40, a flexible printed circuit (FPC) 90, a resin wall 70, and a resin seal.
  • FPC flexible printed circuit
  • the semiconductor chip 10 includes a power semiconductor element.
  • the semiconductor chip 10 is bonded onto the heat spreader 20 with solder 50.
  • two semiconductor chips 10 are provided for one heat spreader 20, which are IGBT (Insulated Gate Bipolar Transistor) and FWD (Free Wheeling Diode), respectively.
  • the IGBT includes an emitter electrode on the upper surface and a collector electrode on the lower surface.
  • the FWD includes an anode electrode on the upper surface and a cathode electrode on the lower surface.
  • the type and number of power semiconductor elements included in the semiconductor chip 10 are arbitrary.
  • the semiconductor chip 10 may include other switching elements such as MOSFETs (Metal / Oxide / Semiconductor / Field-Effect / Transistor) instead of the IGBT.
  • MOSFETs Metal / Oxide / Semiconductor / Field-Effect / Transistor
  • the first connection terminal 12 is fixed (bonded) to the upper surface of the semiconductor chip 10 with the solder 50.
  • the lower ends of the respective leg portions of the first connection terminal 12 are joined to the emitter electrode of the IGBT and the anode electrode of the FWD by the solder 50, respectively.
  • the upper part of the first connection terminal 12 may be joined to a bus bar (not shown) by, for example, laser welding.
  • the heat spreader 20 is a member that absorbs and diffuses heat generated in the semiconductor chip 10.
  • the heat spreader 20 is formed from a metal having excellent thermal diffusibility, such as copper or aluminum.
  • the heat spreader 20 is made of copper.
  • oxygen-free copper (C1020) having the highest conductivity among copper materials is suitable.
  • the second connection terminal 14 is joined to the upper surface of the heat spreader 20 by solder or the like. Since the IGBT collector electrode as the semiconductor chip 10 (and the cathode electrode of the FWD as the semiconductor chip 10) is connected to the heat spreader 20, the second connection terminal 14 constitutes an IGBT collector electrode extraction part. To do. Similarly to the first connection terminal 12, the second connection terminal 14 may be joined to a bus bar (not shown) by, for example, laser welding.
  • the insulating layer 30 may be composed of a resin adhesive or a resin sheet.
  • the insulating layer 30 may be formed of a resin using alumina as a filler, for example.
  • the insulating layer 30 is provided between the heat spreader 20 and the heat sink 40 and is bonded to the heat spreader 20 and the heat sink 40.
  • the insulating layer 30 ensures high thermal conductivity from the heat spreader 20 to the heat sink 40 while ensuring electrical insulation between the heat spreader 20 and the heat sink 40.
  • the heat sink 40 is made of a material having good thermal conductivity, and is made of a metal such as aluminum. As shown in FIG. 2, the heat sink 40 includes fins 42 on the lower surface side. The number and arrangement of the fins 42 are arbitrary. The fins 42 may be straight fins as illustrated, or may be realized by staggered arrangement of pin fins. In the mounted state of the semiconductor device 1, the fins 42 are in contact with a cooling medium such as cooling water or cooling air. In this way, the heat from the semiconductor chip 10 generated when the semiconductor device 1 is driven is transmitted to the cooling medium from the fins 42 of the heat sink 40 via the heat spreader 20 and the insulating layer 30, thereby cooling the semiconductor device 1. Is done.
  • the FPC 90 wiring (not shown) connected to the bonding wire 80 is formed (printed) on the upper surface (the surface opposite to the side bonded to the heat spreader 20). As shown in FIGS. 1 and 2, one end of the FPC 90 is attached on the heat spreader 20.
  • the FPC 90 may be bonded onto the heat spreader 20 by, for example, an adhesive.
  • the FPC 90 has a wide end 90 a on the heat spreader 20 side, and the end 90 a is joined onto the heat spreader 20.
  • the end portion 90 a of the FPC 90 is bonded to a region adjacent to the semiconductor chip 10 on the heat spreader 20.
  • the FPC 90 is arranged in such a manner that a portion extending from the end portion 90a to the other end side extends beyond the edge of the heat spreader 20 to the outside of the heat spreader 20. Is done.
  • the FPC 90 is connected to the semiconductor chip 10 by a bonding wire 80 on the heat spreader 20, as shown in FIGS.
  • the FPC 90 is electrically connected to an IGBT (an example of the semiconductor chip 10) by a bonding wire 80.
  • the FPC 90 may be connected to the semiconductor chip 10 by a plurality of bonding wires 80.
  • the plurality of bonding wires 80 may form, for example, IGBT switching control lines (gate signal lines, emitter signal lines), chip temperature detection lines, sense terminals, and the like.
  • FIG. 3 is a view showing the resin wall portion 70 in FIG.
  • FIG. 4 is a view illustrating the resin wall portion 70 and the resin sealing portion 72 in FIG. 1. Therefore, FIG. 2 corresponds to a main cross-sectional view of the semiconductor device 1 shown in FIG.
  • the resin wall part 70 is provided over the perimeter of the peripheral part of the heat spreader 20, as shown in FIG. Therefore, as shown in FIG. 2, the resin wall portion 70 is provided on the FPC 90 at the edge where the FPC 90 exceeds the heat spreader 20 (the edge where the FPC 90 in the heat spreader 20 passes above).
  • the resin wall portion 70 may be formed by arranging a resin material along the entire circumference of the peripheral edge portion of the heat spreader 20.
  • the resin wall portion 70 may be formed of any resin material having a high viscosity that functions as a so-called dam material.
  • the resin wall portion 70 does not hang down from the edge portion of the heat spreader 20 to the side surface of the heat spreader 20 during construction (or does not protrude into a region outside the edge portion of the heat spreader 20 in the FPC 90). It is formed of a highly viscous resin material that can retain its shape. Typically, the resin wall portion 70 is formed of a resin material having a viscosity higher than that of at least the resin material forming the resin sealing portion 72.
  • the resin material of the resin wall portion 70 may contain a liquid epoxy resin and a cationic polymerization initiator as a curing agent.
  • the resin sealing portion 72 is provided in a region surrounded by the resin wall portion 70 on the upper surface of the heat spreader 20.
  • the resin sealing portion 72 may be formed by molding a resin material in a region surrounded by the resin wall portion 70 on the upper surface of the heat spreader 20.
  • the resin material may be any material suitable for sealing, and may be, for example, a thermosetting resin (epoxy resin or the like) using an acid anhydride-based or phenol-based curing agent, silicon gel, or the like.
  • the resin material of the resin sealing portion 72 ′ having a relatively low viscosity is In some cases, the heat spreader 20 may travel over the FPC 90 beyond the edge of the heat spreader 20. In this case, as shown in FIG. 5, the element to be originally sealed by the resin sealing portion 72 ′ (particularly the element located in the vicinity of the FPC 90, for example, the bonding wire 80 in the illustrated example) is not sealed. Can also occur.
  • the resin wall portion 70 functions as a dam frame (bank), so that the FPC 90 extends beyond the edge of the heat spreader 20 to the outside.
  • the flow of the resin material that can travel on is blocked.
  • the protrusion of the resin sealing portion 72 can be prevented, and the element to be sealed can be reliably sealed by the resin sealing portion 72.
  • the height of the resin wall portion 70 is preferably set based on the highest element to be sealed by the resin sealing portion 72 among various elements arranged on the heat spreader 20.
  • the highest element to be sealed by the resin sealing portion 72 is a bonding wire 80.
  • the height of the resin wall 70 is set to be higher than that of the bonding wire 80 with reference to the upper surface of the heat spreader 20. Thereby, as shown in FIG. 2, the bonding wire 80 can be reliably sealed by the resin sealing portion 72.
  • the resin sealing portion 72 is formed so as to cover the semiconductor chip 10 and the bonding wire 80 on the heat spreader 20.
  • the semiconductor chip 10 can be protected, and the reliability of the bonding portion between the heat spreader 20 and the semiconductor chip 10 by the solder 50 and the bonding reliability between the bonding wire 80 and the FPC 90 and the semiconductor chip 10 can be improved.
  • the resin sealing portion 72 it is possible to prevent a breakdown voltage failure from occurring in the semiconductor chip 10 due to sputtering when the first connection terminal 12 and the second connection terminal 14 are laser welded. be able to.
  • the semiconductor chip 10 is bonded onto the heat spreader 20, and the first connection terminal 12 and the second connection terminal 14 are bonded to the semiconductor chip 10 and the heat spreader 20, respectively. Further, the FPC 90 is joined on the heat spreader 20. Next, the FPC 90 and the semiconductor chip 10 are electrically connected by the bonding wires 80 on the heat spreader 20.
  • a highly viscous resin material (dam material) is applied over the entire periphery of the peripheral portion of the heat spreader 20 to form the resin wall portion 70.
  • a highly viscous resin material is applied on the FPC 90 to form the resin wall portion 70.
  • the resin wall portion 70 is formed on the end portion 90 a of the FPC 90 disposed on a part of the peripheral portion of the heat spreader 20.
  • a resin material is injected into a region surrounded by the resin wall portion 70 on the upper surface of the heat spreader 20, thereby forming a resin sealing portion 72.
  • the heat spreader 20 corresponds to the “metal substrate” in the claims
  • the FPC 90 corresponds to the “flexible circuit board” in the claims.
  • the resin wall portion 70 is formed over the entire periphery of the peripheral portion of the heat spreader 20, but the portion where the FPC 90 that is a part of the peripheral portion of the heat spreader 20 is disposed.
  • the resin wall portion 70 may be formed only on a part of the peripheral portion of the heat spreader 20 including the portion where the FPC 90 is disposed. Also in this case, since the flow of the resin material that can travel on the FPC 90 beyond the edge of the heat spreader 20 is blocked, it is possible to prevent the resin sealing portion 72 from protruding.
  • a reinforcing material may be provided on a portion of the FPC 90 that is located on the edge of the heat spreader 20 (in the illustrated example, the end 90a of the FPC 90 disposed on the edge of the heat spreader 20).
  • the reinforcing material may be formed from the same material (for example, polyimide) as the FPC 90, for example.

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Abstract

　半導体装置１は、金属基板と、金属基板上に配置される半導体素子と、金属基板上に一端が配置され、半導体素子と電気的に接続される可撓性回路基板であって、金属基板の縁部を越えて金属基板の外側に延在する可撓性回路基板と、金属基板の外周縁部のうちの、少なくとも、可撓性回路基板が越えて延在する金属基板の縁部に配置され、該縁部では可撓性回路基板上に設けられる樹脂壁部と、樹脂壁部よりも内側で金属基板を覆うように設けられる樹脂封止部とを含む。

Description

半導体装置及びその製造方法
　本開示は、可撓性回路基板を備える半導体装置及びその製造方法に関する。
　従来から、放熱体に接しているセラミックス基板と、セラミックス基板に接している金属部材と、該金属部材の上に搭載された電子部品と、セラミックス基板より外側に配置され、電子部品とボンディングワイヤで電気的に接続され、外部に通じる電極（制御端子）と、を有する半導体装置が知られている（例えば、特許文献１参照）。
特開2009-088215号公報
　しかしながら、上記の特許文献１に記載の技術のように、制御端子を介して電子部品を外部と電気的に接続する構成では、基板より外側に制御端子が配置されるので、半導体装置のサイズが大きくなるという問題点がある。
　この点、基板上に可撓性回路基板を直接取り付けることで、基板上の半導体素子と外部との電気的接続を実現する構成では、半導体装置のサイズを小さくできる点で有利である。しかしながら、かかる構成では、基板上を樹脂で封止する際に、樹脂が可撓性回路基板を伝って基板よりも外側にはみ出す虞がある。
　そこで、本開示は、樹脂が可撓性回路基板を伝って基板よりも外側にはみ出すことを適切に防止することができる半導体装置及びその製造方法の提供を目的とする。
　一局面によれば、金属基板と、
　前記金属基板上に配置される半導体素子と、
　前記金属基板上に一端が配置され、前記半導体素子と電気的に接続される可撓性回路基板であって、前記金属基板の縁部を越えて前記金属基板の外側に延在する可撓性回路基板と、
　前記金属基板の外周縁部のうちの、少なくとも、前記可撓性回路基板が越えて延在する前記金属基板の縁部に配置され、該縁部では前記可撓性回路基板上に設けられる樹脂壁部と、
　前記樹脂壁部よりも内側で前記金属基板を覆うように設けられる樹脂封止部とを含むことを特徴とする、半導体装置が提供される。
　一局面によれば、樹脂が可撓性回路基板を伝って基板よりも外側にはみ出すことを適切に防止することができる半導体装置及びその製造方法が得られる。
一実施例による半導体装置１の要部を示す斜視図である。 半導体装置１の主要断面図である。 図１に樹脂壁部７０が追加的に図示された図である。 図１に樹脂壁部７０及び樹脂封止部７２が追加的に図示された図である。 樹脂壁部７０を備えていない比較例を示す図である。
　以下、図面を参照して、実施例の説明を行う。
　図１は、一実施例による半導体装置１の要部を示す斜視図である。図２は、半導体装置１の主要断面図である。尚、図１においては、都合上、図２に示されている半導体装置１の絶縁層３０、ヒートシンク４０、樹脂壁部７０及び樹脂封止部７２についての図示が省略されている。
　尚、半導体装置１の上下方向は、半導体装置１の搭載状態に応じて上下方向が異なるが、以下では、便宜上、半導体装置１のヒートスプレッダ２０に対して半導体チップ１０側を上方とする。また、用語の定義として、「外側」及び「内側」とは、ヒートスプレッダ２０の上面に垂直な面直視でヒートスプレッダ２０の中心を基準とする。即ち、「外側」とは、面直視でヒートスプレッダ２０の中心から離れる側を指し、「内側」とは、面直視でヒートスプレッダ２０の中心の向かう側を指す。尚、ヒートスプレッダ２０の中心は凡そであればよく、厳密に決定されるべき性質のものでない。
　半導体装置１は、例えば、ハイブリッド車又は電気自動車で使用されるモータ駆動用のインバータを構成するものであってよい。
　半導体装置１は、図1及び図２に示すように、半導体チップ１０と、ヒートスプレッダ２０と、絶縁層３０と、ヒートシンク４０と、ＦＰＣ（flexible printed circuit）９０と、樹脂壁部７０と、樹脂封止部７２とを含む。
　半導体チップ１０は、パワー半導体素子を含む。半導体チップ１０は、ヒートスプレッダ２０上に半田５０により接合される。図示の例では、半導体チップ１０は、１つのヒートスプレッダ２０に対して２つ設けられ、それぞれ、ＩＧＢＴ（Insulated Gate Bipolar Transistor）と、ＦＷＤ（Free Wheeling Diode）である。この場合、ＩＧＢＴは、上面にエミッタ電極を備え、下面にコレクタ電極を備える。また、ＦＷＤは、上面にアノード電極を備え、下面にカソード電極を備える。尚、半導体チップ１０が含むパワー半導体素子の種類や数は、任意である。また、半導体チップ１０は、ＩＧＢＴに代えて、ＭＯＳＦＥＴ（Metal Oxide Semiconductor Field-Effect Transistor)のような他のスイッチング素子を含んでもよい。
　半導体チップ１０の上面には、第１接続端子１２が半田５０により固着（接合）される。図示の例では、第１接続端子１２のそれぞれの脚部の下端は、それぞれ、ＩＧＢＴのエミッタ電極と、ＦＷＤのアノード電極に半田５０により接合される。第１接続端子１２の上部は、バスバー（図示せず）に例えばレーザ溶接により接合されてもよい。
　ヒートスプレッダ２０は、半導体チップ１０で発生する熱を吸収し拡散する部材である。ヒートスプレッダ２０は、例えば銅、アルミなどの熱拡散性の優れた金属から形成される。本例では、一例として、ヒートスプレッダ２０は、銅により形成される。銅としては、伝導率が銅材の中で最も高い無酸素銅(C1020)が好適である。
　ヒートスプレッダ２０の上面には、第２接続端子１４が半田等により接合される。尚、ヒートスプレッダ２０には、半導体チップ１０としてのＩＧＢＴのコレクタ電極（及び半導体チップ１０としてのＦＷＤのカソード電極）が接続されるので、第２接続端子１４は、ＩＧＢＴのコレクタ電極の取り出し部を構成する。第２接続端子１４は、第１接続端子１２と同様、バスバー（図示せず）に例えばレーザ溶接により接合されてもよい。
　絶縁層３０は、樹脂接着剤や樹脂シートから構成されてよい。絶縁層３０は、例えばアルミナをフィラーとした樹脂で形成されてもよい。絶縁層３０は、ヒートスプレッダ２０とヒートシンク４０の間に設けられ、ヒートスプレッダ２０とヒートシンク４０に接合する。絶縁層３０は、ヒートスプレッダ２０とヒートシンク４０との間の電気的な絶縁性を確保しつつ、ヒートスプレッダ２０からヒートシンク４０への高い熱伝導性を確保する。
　ヒートシンク４０は、熱伝導性の良い材料から形成され、例えば、アルミなどの金属により形成される。ヒートシンク４０は、図２に示すように、下面側にフィン４２を備える。フィン４２の数や配列態様は任意である。フィン４２は、図示のようなストレートフィンであってもよいし、その他、ピンフィンの千鳥配置等で実現されてもよい。半導体装置１の実装状態では、フィン４２は、冷却水や冷却空気のような冷却媒体と接触する。このようにして、半導体装置１の駆動時に生じる半導体チップ１０からの熱は、ヒートスプレッダ２０、絶縁層３０を介して、ヒートシンク４０のフィン４２から冷却媒体へと伝達され、半導体装置１の冷却が実現される。
　ＦＰＣ９０は、上面（ヒートスプレッダ２０に接合される側とは逆側の表面）に、ボンディングワイヤ８０に接続される配線（図示せず）が形成（プリント）される。ＦＰＣ９０は、図１及び図２に示すように、ヒートスプレッダ２０上に一端が取り付けられる。ＦＰＣ９０は、ヒートスプレッダ２０上に例えば接着剤により接合されてもよい。図示の例では、ＦＰＣ９０は、ヒートスプレッダ２０側に、幅広の端部９０ａを有し、この端部９０ａがヒートスプレッダ２０上に接合される。図示の例では、ＦＰＣ９０の端部９０ａは、ヒートスプレッダ２０上における半導体チップ１０に隣接する領域に接合される。また、ＦＰＣ９０は、図１及び図２に示すように、端部９０ａから他端側へと延在する部位がヒートスプレッダ２０の縁部を越えてヒートスプレッダ２０の外側へと延出する態様で、配置される。
　ＦＰＣ９０は、図１及び図２に示すように、ヒートスプレッダ２０上でボンディングワイヤ８０により半導体チップ１０に接続される。図示の例では、ＦＰＣ９０は、ボンディングワイヤ８０によりＩＧＢＴ（半導体チップ１０の一例）に電気的に接続される。ＦＰＣ９０は、複数個のボンディングワイヤ８０で半導体チップ１０に接続されてもよい。複数個のボンディングワイヤ８０は、例えば、ＩＧＢＴのスイッチング用の制御線（ゲート信号線、エミッタ信号線）や、チップ温度検出用の線、センス端子等を形成するものであってよい。
　ここで、図２、図３及び図４を参照しつつ、樹脂壁部７０及び樹脂封止部７２について説明する。
　図３は、図１に樹脂壁部７０が図示された図である。図４は、図１に樹脂壁部７０及び樹脂封止部７２が図示された図である。従って、図２は、図４に示す半導体装置１の主要断面図に相当する。
　樹脂壁部７０は、図３に示すように、ヒートスプレッダ２０の周縁部の全周に亘って設けられる。従って、樹脂壁部７０は、図２に示すように、ＦＰＣ９０がヒートスプレッダ２０を越える縁部（ヒートスプレッダ２０におけるＦＰＣ９０が上を通過する縁部）においては、ＦＰＣ９０上に設けられる。樹脂壁部７０は、ヒートスプレッダ２０の周縁部の全周に沿って、樹脂材料を配置することにより形成されてよい。樹脂壁部７０は、いわゆるダム材として機能する粘度の高い任意の樹脂材料により形成されてもよい。具体的には、樹脂壁部７０は、施工時にヒートスプレッダ２０の縁部からヒートスプレッダ２０の側面へと垂れること（又はＦＰＣ９０におけるヒートスプレッダ２０の縁部よりも外側の領域へとはみ出ること）がないように形状を保持できる粘性の高い樹脂材料により形成される。典型的には、樹脂壁部７０は、少なくとも樹脂封止部７２を形成する樹脂材料よりも粘性が高い樹脂材料により形成される。例えば、樹脂壁部７０の樹脂材料は、液状エポキシ樹脂及び硬化剤としてカチオン系重合開始剤を含有するものであってもよい。
　樹脂封止部７２は、ヒートスプレッダ２０の上面における樹脂壁部７０により囲繞された領域に設けられる。樹脂封止部７２は、ヒートスプレッダ２０の上面における樹脂壁部７０により囲繞された領域に、樹脂材料をモールドすることにより形成されてよい。樹脂材料は、封止に適した任意の材料であってよく、例えば、酸無水物系又はフェノール系硬化剤を使用した熱硬化性樹脂（エポキシ樹脂等）やシリコンゲル等であってよい。
　ここで、樹脂壁部７０を備えていない比較例では、図５に示すように、樹脂封止部７２’を形成する際に、比較的粘性が低い樹脂封止部７２’の樹脂材料は、ヒートスプレッダ２０の縁部を越えて外側へとＦＰＣ９０上を伝ってしまう場合がある。この場合、図５に示すように、樹脂封止部７２’で本来封止すべき要素（特にＦＰＣ９０の近傍に位置する要素であり、図示の例では、例えばボンディングワイヤ８０）が封止されない場合も生じうる。
　これに対して、本実施例によれば、樹脂封止部７２を形成する際に、樹脂壁部７０がダム枠（堤防）として機能するので、ヒートスプレッダ２０の縁部を越えて外側へとＦＰＣ９０上を伝いうる樹脂材料の流れが堰止めされる。これにより、樹脂封止部７２のはみ出しを防止し、樹脂封止部７２により封止すべき要素を確実に封止することができる。
　樹脂壁部７０の高さは、好ましくは、ヒートスプレッダ２０上に配置される各種要素のうち、樹脂封止部７２により封止すべき最も高い要素を基準として設定される。図示の例では、樹脂封止部７２により封止すべき最も高い要素は、ボンディングワイヤ８０である。この場合、ヒートスプレッダ２０の上面を基準として、樹脂壁部７０の高さは、ボンディングワイヤ８０よりも高く設定される。これにより、図２に示すように、樹脂封止部７２によりボンディングワイヤ８０を確実に封止することができる。
　尚、図２及び図４に示す例では、樹脂封止部７２は、ヒートスプレッダ２０上の半導体チップ１０及びボンディングワイヤ８０を覆うように形成される。これにより、半導体チップ１０を保護すると共に、半田５０によるヒートスプレッダ２０と半導体チップ１０との間の接合部の信頼性や、ボンディングワイヤ８０とＦＰＣ９０及び半導体チップ１０との接合信頼性を高めることができる。尚、樹脂封止部７２による半導体チップ１０を覆うことにより、第１接続端子１２や第２接続端子１４をレーザ溶接する際のスパッタに起因して半導体チップ１０に耐圧不良が生じるのを防止することができる。
　次に、本実施例の半導体装置１の製造方法について説明する。
　先ず、図１に示すように、ヒートスプレッダ２０上に、半導体チップ１０が接合され、半導体チップ１０及びヒートスプレッダ２０にそれぞれ第１接続端子１２及び第２接続端子１４が接合される。また、ヒートスプレッダ２０上に、ＦＰＣ９０が接合される。次いで、ＦＰＣ９０と半導体チップ１０とがヒートスプレッダ２０上でボンディングワイヤ８０により電気的に接続される。
　次いで、図３に示すように、ヒートスプレッダ２０の周縁部の全周に亘って粘性の高い樹脂材料（ダム材）が塗布され、樹脂壁部７０が形成される。尚、この際、ヒートスプレッダ２０の周縁部の一部には、ＦＰＣ９０が配置されているので、その部分については、ＦＰＣ９０上に、粘性の高い樹脂材料が塗布され、樹脂壁部７０が形成される。尚、図３に示す例では、ヒートスプレッダ２０の周縁部の一部上に配置されるＦＰＣ９０の端部９０ａ上に樹脂壁部７０が形成されることになる。
　次いで、図４に示すように、ヒートスプレッダ２０の上面における樹脂壁部７０により囲繞された領域に樹脂材料が注入され、樹脂封止部７２が形成される。
　尚、以上の実施例においては、ヒートスプレッダ２０が特許請求の範囲の「金属基板」に対応し、ＦＰＣ９０が特許請求の範囲の「可撓性回路基板」に対応している。
　以上、本発明の好ましい実施例について詳説したが、本発明は、上述した実施例に制限されることはなく、本発明の範囲を逸脱することなく、上述した実施例に種々の変形及び置換を加えることができる。
　例えば、上述では、好ましい実施例として、ヒートスプレッダ２０の周縁部の全周に亘って樹脂壁部７０が形成されるが、ヒートスプレッダ２０の周縁部の一部であるＦＰＣ９０が配置されている部分に対してのみ、又は、ＦＰＣ９０が配置されている部分を含むヒートスプレッダ２０の周縁部の一部のみに、樹脂壁部７０が形成されてもよい。この場合も、ヒートスプレッダ２０の縁部を越えて外側へとＦＰＣ９０上を伝いうる樹脂材料の流れが堰止めされるので、樹脂封止部７２のはみ出しを防止することができる。
　また、上述した実施例において、ＦＰＣ９０におけるヒートスプレッダ２０の縁部上に位置する部位（図例では、ヒートスプレッダ２０の縁部上に配置されるＦＰＣ９０の端部９０ａ）に補強材が設けられてもよい。補強材は、例えば、ＦＰＣ９０と同一の材料（例えばポリイミド）から形成されてよい。これにより、ヒートスプレッダ２０の縁部から受ける力に起因したＦＰＣ９０における応力集中が低減され、ＦＰＣ９０上の配線を適切に保護することができる。
　１　　半導体装置
　１０　　半導体チップ
　１２　　第１接続端子
　１４　　第２接続端子
　２０　　ヒートスプレッダ
　３０　　絶縁層
　４０　　ヒートシンク
　４２　　フィン
　５０　　半田
　７０　　樹脂壁部
　７２　　樹脂封止部
　８０　　ボンディングワイヤ
　９０　　ＦＰＣ
　９０ａ　　端部

Claims (5)

  1. 　金属基板と、
    　前記金属基板上に配置される半導体素子と、
    　前記金属基板上に一端が配置され、前記半導体素子と電気的に接続される可撓性回路基板であって、前記金属基板の縁部を越えて前記金属基板の外側に延在する可撓性回路基板と、
    　前記金属基板の外周縁部のうちの、少なくとも、前記可撓性回路基板が越えて延在する前記金属基板の縁部に配置され、該縁部では前記可撓性回路基板上に設けられる樹脂壁部と、
    　前記樹脂壁部よりも内側で前記金属基板を覆うように設けられる樹脂封止部とを含むことを特徴とする、半導体装置。
  2. 　前記樹脂壁部は、前記金属基板の外周縁部に全周に亘って設けられる、請求項１に記載の半導体装置。
  3. 　前記樹脂封止部は、前記樹脂壁部により囲まれる前記金属基板の領域全体を覆うように設けられる、請求項２に記載の半導体装置。
  4. 　前記可撓性回路基板は、前記金属基板上で前記半導体素子とボンディングワイヤにより接続され、
    　前記樹脂壁部の高さは、前記金属基板上で前記ボンディングワイヤの高さよりも高く、
    　前記樹脂封止部は、前記ボンディングワイヤを覆うように設けられる、請求項１～３のうちのいずれか１項に記載の半導体装置。
  5. 　金属基板上に半導体素子を配置するステップと、
    　可撓性回路基板の一端が前記金属基板の縁部を越えて前記金属基板の外側に延在する態様で前記金属基板上に前記可撓性回路基板の他端を取り付けると共に、前記可撓性回路基板を前記半導体素子に電気的に接続するステップと、
    　前記可撓性回路基板が取り付けられた前記金属基板の外周縁部に全周に亘って樹脂壁部を形成するステップと、
    　前記樹脂壁部により囲まれる前記金属基板の領域全体を覆うように樹脂封止部を形成するステップとを含むことを特徴とする、半導体装置の製造方法。
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