WO2013065647A1 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
WO2013065647A1
WO2013065647A1 PCT/JP2012/077917 JP2012077917W WO2013065647A1 WO 2013065647 A1 WO2013065647 A1 WO 2013065647A1 JP 2012077917 W JP2012077917 W JP 2012077917W WO 2013065647 A1 WO2013065647 A1 WO 2013065647A1
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WIPO (PCT)
Prior art keywords
fpc
heat spreader
metal substrate
semiconductor device
circuit board
Prior art date
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PCT/JP2012/077917
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English (en)
French (fr)
Inventor
純司 鶴岡
誠二 安井
山戸　修
貴之 前田
Original Assignee
アイシン・エィ・ダブリュ株式会社
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Publication of WO2013065647A1 publication Critical patent/WO2013065647A1/ja

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Definitions

  • the present disclosure relates to a semiconductor device including a flexible circuit board.
  • a ceramic substrate in contact with a radiator a metal member in contact with the ceramic substrate, an electronic component mounted on the metal member, and an electronic component and a bonding wire disposed outside the ceramic substrate.
  • a semiconductor device having an electrode (control terminal) that is electrically connected and communicates with the outside is known (see, for example, Patent Document 1).
  • an object of the present disclosure is to provide a semiconductor device that can appropriately protect the flexible circuit board from the edge of the metal substrate.
  • a metal substrate A semiconductor element disposed on the metal substrate; A flexible circuit board having one end disposed on the metal substrate and electrically connected to the semiconductor element, wherein the flexible circuit board extends beyond an edge of the metal substrate and extends outside the metal substrate.
  • Circuit board A semiconductor device is provided in which a plate thickness adding member is coupled to a portion of the flexible circuit board located on an edge of the metal board on the metal board side.
  • FIG. 1 is a main cross-sectional view of a semiconductor device 1; It is sectional drawing of the single item state of FPC90. It is sectional drawing of the single-piece
  • FIG. 1 is a perspective view showing a main part of a semiconductor device 1 according to an embodiment.
  • FIG. 2 is a main cross-sectional view of the semiconductor device 1.
  • FIG. 3 is a sectional view of the FPC 90 in a single product state.
  • illustration of the insulating layer 30 and the heat sink 40 of the semiconductor device 1 shown in FIG. 2 is omitted for convenience.
  • the vertical direction of the semiconductor device 1 differs depending on the mounting state of the semiconductor device 1, but hereinafter, for convenience, the semiconductor chip 10 side is set upward with respect to the heat spreader 20 of the semiconductor device 1.
  • “outside” and “inside” are based on the center of the heat spreader 20 as viewed from a plane perpendicular to the upper surface of the heat spreader 20. That is, the “outside” refers to the side away from the center of the heat spreader 20 when viewed from the surface. It should be noted that the center of the heat spreader 20 may be approximately, and is not of a nature that should be strictly determined.
  • the semiconductor device 1 may constitute, for example, an inverter for driving a motor used in a hybrid vehicle or an electric vehicle.
  • the semiconductor device 1 includes a semiconductor chip 10, a heat spreader 20, an insulating layer 30, a heat sink 40, and an FPC (flexible printed circuit) 90, as shown in FIGS.
  • the semiconductor chip 10 includes a power semiconductor element.
  • the semiconductor chip 10 is bonded onto the heat spreader 20 with solder 50.
  • two semiconductor chips 10 are provided for one heat spreader 20, which are IGBT (Insulated Gate Bipolar Transistor) and FWD (Free Wheeling Diode), respectively.
  • the IGBT includes an emitter electrode on the upper surface and a collector electrode on the lower surface.
  • the FWD includes an anode electrode on the upper surface and a cathode electrode on the lower surface.
  • the type and number of power semiconductor elements included in the semiconductor chip 10 are arbitrary.
  • the semiconductor chip 10 may include other switching elements such as MOSFETs (Metal / Oxide / Semiconductor / Field-Effect / Transistor) instead of the IGBT.
  • MOSFETs Metal / Oxide / Semiconductor / Field-Effect / Transistor
  • the first connection terminal 12 is fixed (bonded) to the upper surface of the semiconductor chip 10 with the solder 50.
  • the lower ends of the respective leg portions of the first connection terminal 12 are joined to the emitter electrode of the IGBT and the anode electrode of the FWD by the solder 50, respectively.
  • the upper part of the first connection terminal 12 may be joined to a bus bar (not shown) by, for example, laser welding.
  • the heat spreader 20 is a member that absorbs and diffuses heat generated in the semiconductor chip 10.
  • the heat spreader 20 is formed from a metal having excellent thermal diffusibility, such as copper or aluminum.
  • the heat spreader 20 is made of copper.
  • oxygen-free copper (C1020) having the highest conductivity among copper materials is suitable.
  • the second connection terminal 14 is joined to the upper surface of the heat spreader 20 by solder or the like. Since the IGBT collector electrode as the semiconductor chip 10 (and the cathode electrode of the FWD as the semiconductor chip 10) is connected to the heat spreader 20, the second connection terminal 14 constitutes an IGBT collector electrode extraction part. To do. Similarly to the first connection terminal 12, the second connection terminal 14 may be joined to a bus bar (not shown) by, for example, laser welding.
  • the insulating layer 30 may be composed of a resin adhesive or a resin sheet.
  • the insulating layer 30 may be formed of a resin using alumina as a filler, for example.
  • the insulating layer 30 is provided between the heat spreader 20 and the heat sink 40 and is bonded to the heat spreader 20 and the heat sink 40.
  • the insulating layer 30 ensures high thermal conductivity from the heat spreader 20 to the heat sink 40 while ensuring electrical insulation between the heat spreader 20 and the heat sink 40.
  • the heat sink 40 is made of a material having good thermal conductivity, and is made of a metal such as aluminum. As shown in FIG. 2, the heat sink 40 includes fins 42 on the lower surface side. The number and arrangement of the fins 42 are arbitrary. The fins 42 may be straight fins as illustrated, or may be realized by staggered arrangement of pin fins. In the mounted state of the semiconductor device 1, the fins 42 are in contact with a cooling medium such as cooling water or cooling air. In this way, the heat from the semiconductor chip 10 generated when the semiconductor device 1 is driven is transmitted to the cooling medium from the fins 42 of the heat sink 40 via the heat spreader 20 and the insulating layer 30, thereby cooling the semiconductor device 1. Is done.
  • the FPC 90 has one end attached on the heat spreader 20 as shown in FIGS. 1 and 2.
  • the FPC 90 may be bonded onto the heat spreader 20 by, for example, an adhesive.
  • the FPC 90 has a wide end 90 a on the heat spreader 20 side, and the end 90 a is joined onto the heat spreader 20.
  • the end portion 90 a of the FPC 90 is bonded to a region adjacent to the semiconductor chip 10 on the heat spreader 20.
  • the FPC 90 is arranged in such a manner that a portion extending from the end portion 90a to the other end side extends beyond the edge of the heat spreader 20 to the outside of the heat spreader 20. Is done.
  • the FPC 90 is connected to the semiconductor chip 10 by a bonding wire 80 on the heat spreader 20, as shown in FIGS.
  • the FPC 90 is electrically connected to an IGBT (an example of the semiconductor chip 10) by a bonding wire 80.
  • the FPC 90 may be connected to the semiconductor chip 10 by a plurality of bonding wires 80.
  • the plurality of bonding wires 80 may form, for example, IGBT switching control lines (gate signal lines, emitter signal lines), chip temperature detection lines, sense terminals, and the like.
  • the FPC 90 includes an FPC main body 91 and a reinforcing material 92, as shown in FIG.
  • the FPC main body 91 may have a plate thickness of about 20 ⁇ m, for example.
  • a wiring (not shown) connected to the bonding wire 80 is formed (printed) on the upper surface of the FPC main body 91 (the surface opposite to the side bonded to the heat spreader 20).
  • the reinforcing material 92 is joined to the lower surface of the FPC main body 91.
  • the reinforcing material 92 may be attached to the lower surface of the FPC main body 91 with an adhesive. As shown in FIG. 2, the reinforcing member 92 is provided at a portion located on the edge of the heat spreader 20 in the FPC 90.
  • the reinforcing material 92 is provided over the entire portion of the FPC 90 located on the edge of the heat spreader 20.
  • the reinforcing material 92 may be provided on the entire wide end portion 90 a of the FPC 90.
  • the reinforcing material 92 has an appropriate configuration for protecting the FPC main body 91 (and thus wiring) from the edge of the heat spreader 20. From this viewpoint, the reinforcing material 92 preferably has a larger plate thickness than the FPC main body 91.
  • the reinforcing material 92 may have a plate thickness of about 200 ⁇ m, for example.
  • the reinforcing material 92 may be made of any material as long as it has the above-described protection function, but is preferably made of the same material (for example, polyimide) as the FPC main body 91.
  • the FPC 90 is bonded onto the heat spreader 20
  • a space related to the control terminal is not required as compared with the case where the control terminal is provided outside the heat spreader 20, and the semiconductor device 1 Can be miniaturized.
  • the semiconductor device 1 can be downsized as described above.
  • the FPC main body 91 is damaged (and thus damaged by wiring) due to the edge of the heat spreader 20.
  • the reinforcing material 92 is provided at a portion of the FPC main body 91 located on the edge of the heat spreader 20, the FPC main body 91 (and thus wiring) is appropriately connected from the edge of the heat spreader 20. Can be protected.
  • the FPC 90 may include a reinforcing material 93 similar to the reinforcing material 92 on the other end side opposite to the end portion 90 a on the heat spreader 20 side.
  • a reinforcing member 93 may be required when the other end of the FPC 90 is joined to the connector as shown in FIG.
  • the reinforcing material 92 can be formed of the same material as the reinforcing material 93 used when joining the connector. In this case, the FPC 90 including the reinforcing material 92 can be manufactured without increasing the cost.
  • the embodiment described above is particularly suitable when the FPC 90 is connected to the semiconductor chip 10 by the bonding wire 80, as will be described below with reference to FIG.
  • FIG. 5 is a diagram schematically showing a state at the time of wire bonding using a wire bonding tool
  • FIG. 5A shows a case where an FPC according to a comparative example not provided with the above-described reinforcing material 92 is used.
  • FIG. 5B shows the case of this embodiment.
  • a load is applied to the FPC from the wire bonding tool when the FPC side end of the bonding wire 80 is coupled to the FPC by the wire bonding tool.
  • stress concentration is likely to occur at a portion (particularly, a portion indicated by an arrow Y in FIG. 5A) located on the edge (corner) of the heat spreader in the FPC.
  • the FPC does not include the reinforcing material 92, a high stress is generated in a portion located on the edge of the heat spreader in the FPC, and the wiring pattern in the portion is likely to be damaged.
  • it is necessary to secure a sufficient space for the wire bonding tool (necessity to secure a sufficient distance between the FPC side connection position of the bonding wire 80 and the edge of the heat spreader 20).
  • the size of the semiconductor device is increased.
  • the FPC 90 is provided with the reinforcing material 92 at the portion located on the edge of the heat spreader 20 as described above. Therefore, even during wire bonding using a wire bonding tool. The stress generated in the FPC 90 can be effectively reduced, and damage to the wiring pattern on the FPC 90 can be effectively prevented. Therefore, according to the present embodiment, the connection position of the bonding wire 80 on the FPC 90 side is set in the vicinity of the edge of the heat spreader 20, so that the semiconductor device 1 can be miniaturized and at the time of wire bonding using a wire bonding tool. It is possible to prevent the wiring pattern from being damaged.
  • FIG. 6 is a diagram schematically showing burrs at the edge of the heat spreader 20 formed by punching. As shown in FIG. 6, when the heat spreader 20 is formed by punching with a press, burrs (press burrs) are generated at the edges of the heat spreader 20. This burr typically has a height of 30-40 ⁇ m. The burr is typically formed over the entire circumference of the peripheral portion of the heat spreader 20.
  • FIG. 7 is a view showing a state in which an FPC according to a comparative example not provided with the above-described reinforcing material 92 is attached to a heat-formed press spreader.
  • FIG. 8 is a diagram illustrating a state in which the FPC 90 according to the present embodiment is attached to the heat spreader 20 that has been press-formed.
  • the FPC is attached to the surface of the heat spreader where burrs are generated with an adhesive.
  • produce in a heat spreader can be joined to a heat sink via an insulating layer.
  • the FPC according to the comparative example has a thickness of about 20 ⁇ m, for example, and the adhesive layer has a thickness of about 10 ⁇ m.
  • the burr penetrates the FPC (or penetrates into the FPC), and the FPC wiring is easily short-circuited. For this reason, in the comparative example, it is necessary to deburr the heat spreader.
  • the FPC 90 according to the present embodiment is similar to the comparative example in that the FPC main body 91 has a thickness of, for example, about 20 ⁇ m, and the heat spreader 20 in the FPC 90 has a thickness of about 10 ⁇ m. Since the reinforcing material 92 is provided in the part located on the edge, the wiring of the FPC 90 can be effectively protected from the burr. That is, according to the present embodiment, it is possible to effectively protect the wiring of the FPC 90 from burrs while eliminating the need for deburring of the heat spreader 20.
  • the reinforcing member 92 preferably has a plate thickness larger than the burr height of the heat spreader 20.
  • the reinforcing material 92 may be set to a plate thickness that is larger than the maximum value of the range that the burr height generated in the heat spreader 20 can take.
  • the reinforcing material 92 is set to a plate thickness larger than 40 ⁇ m, and may be about 200 ⁇ m, for example.
  • the heat spreader 20 corresponds to the “metal substrate” in the claims
  • the FPC 90 corresponds to the “flexible circuit board” in the claims
  • the reinforcing member 92 It corresponds to the range of “plate thickness addition member”.
  • the upper surface of the heat spreader 20 may be sealed with resin.
  • the resin plays a role of protecting the semiconductor chip 10 and improving the reliability of the bonding portion between the heat spreader 20 and the semiconductor chip 10 by the solder 50 and the bonding reliability of the bonding wire 80 and the FPC 90 and the semiconductor chip 10.
  • Any resin material may be used, and a gel material such as an epoxy resin or silicon gel may be used.

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Abstract

　半導体装置１は、金属基板と、金属基板上に配置される半導体素子と、金属基板上に一端が配置され、半導体素子と電気的に接続される可撓性回路基板であって、金属基板の縁部を越えて金属基板の外側に延在する可撓性回路基板とを含み、可撓性回路基板における金属基板の縁部上に位置する部位には、金属基板側に板厚付加部材が結合されることを特徴とする。

Description

半導体装置
　本開示は、可撓性回路基板を備える半導体装置に関する。
　従来から、放熱体に接しているセラミックス基板と、セラミックス基板に接している金属部材と、該金属部材の上に搭載された電子部品と、セラミックス基板より外側に配置され、電子部品とボンディングワイヤで電気的に接続され、外部に通じる電極（制御端子）と、を有する半導体装置が知られている（例えば、特許文献１参照）。
特開2009-088215号公報
　しかしながら、上記の特許文献１に記載の技術のように、制御端子を介して電子部品を外部と電気的に接続する構成では、基板より外側に制御端子が配置されるので、半導体装置のサイズが大きくなるという問題点がある。
　この点、基板上に可撓性回路基板を直接取り付けることで、基板上の半導体素子と外部との電気的接続を実現する構成では、半導体装置のサイズを小さくできる点で有利である。しかしながら、かかる構成では、可撓性回路基板を基板の縁部から適切に保護する必要がある。
　そこで、本開示は、可撓性回路基板を金属基板の縁部から適切に保護することができる半導体装置の提供を目的とする。
　本開示の一局面によれば、金属基板と、
　前記金属基板上に配置される半導体素子と、
　前記金属基板上に一端が配置され、前記半導体素子と電気的に接続される可撓性回路基板であって、前記金属基板の縁部を越えて前記金属基板の外側に延在する可撓性回路基板とを含み、
　前記可撓性回路基板における前記金属基板の縁部上に位置する部位には、前記金属基板側に板厚付加部材が結合されることを特徴とする、半導体装置が提供される。
　本開示の一局面によれば、可撓性回路基板を金属基板の縁部から適切に保護することができる半導体装置の提供が得られる。
一実施例による半導体装置１の要部を示す斜視図である。 半導体装置１の主要断面図である。 ＦＰＣ９０の単品状態の断面図である。 他の実施例によるＦＰＣ９０の単品状態の断面図である。 ワイヤボンディングツールを用いたワイヤボンディング時の状態を模式的に示す図である。 打ち抜きにより形成されるヒートスプレッダ２０の縁部のバリを模式的に示す図である。 プレス成形されたヒートスプレッダに、上述の補強材９２を備えていない比較例によるＦＰＣを取り付ける様子を示す図である。 本実施例によるＦＰＣ９０をプレス成形されたヒートスプレッダ２０に取り付ける様子を示す図である。
　以下、図面を参照して、実施例の説明を行う。
　図１は、一実施例による半導体装置１の要部を示す斜視図である。図２は、半導体装置１の主要断面図である。図３は、ＦＰＣ９０の単品状態の断面図である。尚、図１においては、都合上、図２に示されている半導体装置１の絶縁層３０及びヒートシンク４０についての図示が省略されている。
　尚、半導体装置１の上下方向は、半導体装置１の搭載状態に応じて上下方向が異なるが、以下では、便宜上、半導体装置１のヒートスプレッダ２０に対して半導体チップ１０側を上方とする。また、用語の定義として、「外側」及び「内側」とは、ヒートスプレッダ２０の上面に垂直な面直視でヒートスプレッダ２０の中心を基準とする。即ち、「外側」とは、面直視でヒートスプレッダ２０の中心から離れる側を指す。尚、ヒートスプレッダ２０の中心は凡そであればよく、厳密に決定されるべき性質のものでない。
　半導体装置１は、例えば、ハイブリッド車又は電気自動車で使用されるモータ駆動用のインバータを構成するものであってよい。
　半導体装置１は、図1及び図２に示すように、半導体チップ１０と、ヒートスプレッダ２０と、絶縁層３０と、ヒートシンク４０と、ＦＰＣ（flexible printed circuit）９０とを含む。
　半導体チップ１０は、パワー半導体素子を含む。半導体チップ１０は、ヒートスプレッダ２０上に半田５０により接合される。図示の例では、半導体チップ１０は、１つのヒートスプレッダ２０に対して２つ設けられ、それぞれ、ＩＧＢＴ（Insulated Gate Bipolar Transistor）と、ＦＷＤ（Free Wheeling Diode）である。この場合、ＩＧＢＴは、上面にエミッタ電極を備え、下面にコレクタ電極を備える。また、ＦＷＤは、上面にアノード電極を備え、下面にカソード電極を備える。尚、半導体チップ１０が含むパワー半導体素子の種類や数は、任意である。また、半導体チップ１０は、ＩＧＢＴに代えて、ＭＯＳＦＥＴ（Metal Oxide Semiconductor Field-Effect Transistor)のような他のスイッチング素子を含んでもよい。
　半導体チップ１０の上面には、第１接続端子１２が半田５０により固着（接合）される。図示の例では、第１接続端子１２のそれぞれの脚部の下端は、それぞれ、ＩＧＢＴのエミッタ電極と、ＦＷＤのアノード電極に半田５０により接合される。第１接続端子１２の上部は、バスバー（図示せず）に例えばレーザ溶接により接合されてもよい。
　ヒートスプレッダ２０は、半導体チップ１０で発生する熱を吸収し拡散する部材である。ヒートスプレッダ２０は、例えば銅、アルミなどの熱拡散性の優れた金属から形成される。本例では、一例として、ヒートスプレッダ２０は、銅により形成される。銅としては、伝導率が銅材の中で最も高い無酸素銅(C1020)が好適である。
　ヒートスプレッダ２０の上面には、第２接続端子１４が半田等により接合される。尚、ヒートスプレッダ２０には、半導体チップ１０としてのＩＧＢＴのコレクタ電極（及び半導体チップ１０としてのＦＷＤのカソード電極）が接続されるので、第２接続端子１４は、ＩＧＢＴのコレクタ電極の取り出し部を構成する。第２接続端子１４は、第１接続端子１２と同様、バスバー（図示せず）に例えばレーザ溶接により接合されてもよい。
　絶縁層３０は、樹脂接着剤や樹脂シートから構成されてよい。絶縁層３０は、例えばアルミナをフィラーとした樹脂で形成されてもよい。絶縁層３０は、ヒートスプレッダ２０とヒートシンク４０の間に設けられ、ヒートスプレッダ２０とヒートシンク４０に接合する。絶縁層３０は、ヒートスプレッダ２０とヒートシンク４０との間の電気的な絶縁性を確保しつつ、ヒートスプレッダ２０からヒートシンク４０への高い熱伝導性を確保する。
　ヒートシンク４０は、熱伝導性の良い材料から形成され、例えば、アルミなどの金属により形成される。ヒートシンク４０は、図２に示すように、下面側にフィン４２を備える。フィン４２の数や配列態様は任意である。フィン４２は、図示のようなストレートフィンであってもよいし、その他、ピンフィンの千鳥配置等で実現されてもよい。半導体装置１の実装状態では、フィン４２は、冷却水や冷却空気のような冷却媒体と接触する。このようにして、半導体装置１の駆動時に生じる半導体チップ１０からの熱は、ヒートスプレッダ２０、絶縁層３０を介して、ヒートシンク４０のフィン４２から冷却媒体へと伝達され、半導体装置１の冷却が実現される。
　ＦＰＣ９０は、図１及び図２に示すように、ヒートスプレッダ２０上に一端が取り付けられる。ＦＰＣ９０は、ヒートスプレッダ２０上に例えば接着剤により接合されてもよい。図示の例では、ＦＰＣ９０は、ヒートスプレッダ２０側に、幅広の端部９０ａを有し、この端部９０ａがヒートスプレッダ２０上に接合される。図示の例では、ＦＰＣ９０の端部９０ａは、ヒートスプレッダ２０上における半導体チップ１０に隣接する領域に接合される。また、ＦＰＣ９０は、図１及び図２に示すように、端部９０ａから他端側へと延在する部位がヒートスプレッダ２０の縁部を越えてヒートスプレッダ２０の外側へと延出する態様で、配置される。
　ＦＰＣ９０は、図１及び図２に示すように、ヒートスプレッダ２０上でボンディングワイヤ８０により半導体チップ１０に接続される。図示の例では、ＦＰＣ９０は、ボンディングワイヤ８０によりＩＧＢＴ（半導体チップ１０の一例）に電気的に接続される。ＦＰＣ９０は、複数個のボンディングワイヤ８０で半導体チップ１０に接続されてもよい。複数個のボンディングワイヤ８０は、例えば、ＩＧＢＴのスイッチング用の制御線（ゲート信号線、エミッタ信号線）や、チップ温度検出用の線、センス端子等を形成するものであってよい。
　ＦＰＣ９０は、図３に示すように、ＦＰＣ本体９１と、補強材９２とを含む。ＦＰＣ本体９１は、例えば２０μｍ程度の板厚であってよい。ＦＰＣ本体９１の上面（ヒートスプレッダ２０に接合される側とは逆側の表面）には、ボンディングワイヤ８０に接続される配線（図示せず）が形成（プリント）される。補強材９２は、ＦＰＣ本体９１の下面に接合される。補強材９２は、ＦＰＣ本体９１の下面に接着剤により貼り付けられてもよい。補強材９２は、図２に示すように、ＦＰＣ９０におけるヒートスプレッダ２０の縁部上に位置する部位に設けられる。これにより、ヒートスプレッダ２０の縁部によるＦＰＣ９０のＦＰＣ本体９１の損傷（ひいては配線の損傷）を防止することができる。この観点から、補強材９２は、ＦＰＣ９０におけるヒートスプレッダ２０の縁部上に位置する部位の全体に亘って設けられる。図示の例では、補強材９２は、ＦＰＣ９０における広幅の端部９０ａの全体に設けられてよい。
　補強材９２は、ヒートスプレッダ２０の縁部からＦＰＣ本体９１（ひいては配線）を保護するのに適切な構成を有する。この観点から、補強材９２は、好ましくは、ＦＰＣ本体９１よりも大きい板厚を有する。補強材９２は、例えば２００μｍ程度の板厚であってよい。また、補強材９２は、上記の保護機能を備える限り、任意の材料から構成されてよいが、好ましくは、ＦＰＣ本体９１と同一の材料（例えばポリイミド）から形成される。
　このように本実施例によれば、ＦＰＣ９０がヒートスプレッダ２０上に接合されるので、ヒートスプレッダ２０よりも外側に制御端子を設ける場合に比べて、当該制御端子に関連したスペースが不要となり、半導体装置１の小型化を図ることができる。また、ＦＰＣ９０をヒートスプレッダ２０上に接合する場合、上述のように半導体装置１の小型化を図ることができる利点がある反面、ヒートスプレッダ２０の縁部によるＦＰＣ本体９１の損傷（ひいては配線の損傷）の虞があるが、本実施例によれば、補強材９２がＦＰＣ本体９１におけるヒートスプレッダ２０の縁部上に位置する部位に設けられるので、ヒートスプレッダ２０の縁部からＦＰＣ本体９１（ひいては配線）を適切に保護することができる。
　尚、図４に示すように、ＦＰＣ９０は、ヒートスプレッダ２０側の端部９０ａとは逆の他端側にも、補強材９２と同様の補強材９３を備えてもよい。このような補強材９３は、図４に示すように、ＦＰＣ９０の他端側をコネクタに接合させるときに必要とされてよい。他言すると、コネクタに接合させるときに使用される補強材９３と同様の素材により、補強材９２を形成することできる。この場合、コストの増加なしに補強材９２を備えるＦＰＣ９０を製造することができる。
　ここで、上述の実施例は、以下で図５を参照して説明するように、特に、ＦＰＣ９０がボンディングワイヤ８０により半導体チップ１０に接続される場合に好適である。
　図５は、ワイヤボンディングツールを用いたワイヤボンディング時の状態を模式的に示す図であり、図５（Ａ）は、上述の補強材９２を備えていない比較例によるＦＰＣを使用した場合を示し、図５（Ｂ）は、本実施例の場合を示す。
　図５（Ａ）に示すように、ワイヤボンディングツールを用いたワイヤボンディング時には、ワイヤボンディングツールによりボンディングワイヤ８０のＦＰＣ側端部をＦＰＣに結合する際、ＦＰＣにはワイヤボンディングツールから荷重がかけられる。この際、ＦＰＣにおけるヒートスプレッダの縁部（角）上に位置する部位（特に、図５（Ａ）の矢印Ｙで指示される部位）は応力集中しやすくなる。
　この点、比較例によれば、ＦＰＣが補強材９２を備えていないので、ＦＰＣにおけるヒートスプレッダの縁部上に位置する部位に高応力が発生し、当該部位おける配線パターンに損傷が生じやすくなる。このため、このような比較例では、ワイヤボンディングツール用に十分なスペースを確保する必要性（ボンディングワイヤ８０のＦＰＣ側接続位置とヒートスプレッダ２０の縁部との間に十分な距離を確保する必要性）が生じ、それに伴い半導体装置のサイズの大型化を招く。
　これに対して、本実施例によれば、ＦＰＣ９０は、上述の如く、ヒートスプレッダ２０の縁部上に位置する部位に補強材９２を備えているので、ワイヤボンディングツールを用いたワイヤボンディング時においても、ＦＰＣ９０に発生する応力を効果的に低減することができ、ＦＰＣ９０上の配線パターンの損傷を効果的に防止することができる。従って、本実施例によれば、ボンディングワイヤ８０のＦＰＣ９０側接続位置をヒートスプレッダ２０の縁部の近傍に設定することで、半導体装置１の小型化を図りつつ、ワイヤボンディングツールを用いたワイヤボンディング時に配線パターンの損傷が生じるのを防止することができる。
　また、上述の実施例は、以下で図６乃至図８を参照して説明するように、ヒートスプレッダ２０が打ち抜きにより形成される場合に好適である。
　図６は、打ち抜きにより形成されるヒートスプレッダ２０の縁部のバリを模式的に示す図である。図６に示すように、ヒートスプレッダ２０をプレスで打ち抜くことで形成する場合、ヒートスプレッダ２０の縁部には、バリ（プレスバリ）が発生する。このバリは、典型的には、３０～４０μｍの高さを有する。尚、バリは、典型的には、ヒートスプレッダ２０の周縁部の全周に亘って形成される。
　図７は、プレス成形されたヒートスプレッダに、上述の補強材９２を備えていない比較例によるＦＰＣを取り付ける様子を示す図である。図８は、本実施例によるＦＰＣ９０をプレス成形されたヒートスプレッダ２０に取り付ける様子を示す図である。
　ＦＰＣは、ヒートスプレッダにおけるバリが発生する側の表面に接着剤により取り付けられる。尚、これにより、ヒートスプレッダにおけるバリが発生しない側を、絶縁層を介してヒートシンクに接合させることができる。
　この点、比較例によるＦＰＣは、厚さが例えば２０μｍ程度であり、接着剤の層の厚さは１０μｍ程度である。この場合、図７（Ｂ）に模式的に示すように、バリがＦＰＣを突き抜け（又はＦＰＣ内部まで侵入し）、ＦＰＣの配線をショートさせやすくなる。このため、比較例では、ヒートスプレッダのバリ取りが必要となる。
　これに対して、本実施例によるＦＰＣ９０は、比較例と同様、ＦＰＣ本体９１が例えば２０μｍ程度の厚さであり、接着剤の層の厚さが１０μｍ程度である場合でも、ＦＰＣ９０におけるヒートスプレッダ２０の縁部上に位置する部位に補強材９２を備えているので、バリからＦＰＣ９０の配線を効果的に保護することができる。即ち、本実施例によれば、ヒートスプレッダ２０のバリ取りを不要としつつ、バリからＦＰＣ９０の配線を効果的に保護することができる。
　尚、この観点から、補強材９２は、好ましくは、ヒートスプレッダ２０のバリの高さよりも大きい板厚を有する。この場合、補強材９２は、ヒートスプレッダ２０に生じるバリの高さの取りうる範囲の最大値よりも大きい板厚に設定されてよい。例えばバリの高さの取りうる範囲が３０～４０μｍの場合、補強材９２は、４０μｍよりも大きい板厚に設定され、例えば２００μｍ程度であってもよい。
　尚、以上の実施例においては、ヒートスプレッダ２０が特許請求の範囲の「金属基板」に対応し、ＦＰＣ９０が特許請求の範囲の「可撓性回路基板」に対応し、補強材９２が特許請求の範囲の「板厚付加部材」に対応している。
　以上、実施例について詳説したが、本発明は、上述した実施例に制限されることはなく、本発明の範囲を逸脱することなく、上述した実施例に種々の変形及び置換を加えることができる。
　例えば、上述した実施例において、半導体装置１は、ヒートスプレッダ２０の上面が樹脂により封止されてもよい。樹脂は、半導体チップ１０を保護すると共に、半田５０によるヒートスプレッダ２０と半導体チップ１０との間の接合部の信頼性や、ボンディングワイヤ８０とＦＰＣ９０及び半導体チップ１０との接合信頼性を高める役割を果たす。任意の樹脂材料であってよく、例えばエポキシ樹脂やシリコンゲルのようなゲル材料が使用されてもよい。
　尚、本国際出願は、2011年11月4日に出願した日本国特許出願２０１１－２４２２０５号に基づく優先権を主張するものであり、その全内容は本国際出願にここでの参照により援用されるものとする。
　１　　半導体装置
　１０　　半導体チップ
　１２　　第１接続端子
　１４　　第２接続端子
　２０　　ヒートスプレッダ
　２２　　基板
　３０　　絶縁層
　４０　　ヒートシンク
　４２　　フィン
　５０　　半田
　８０　　ボンディングワイヤ
　９０　　ＦＰＣ
　９０ａ　　端部
　９１　　ＦＰＣ本体
　９２　　補強材
　９３　　補強材

Claims (5)

  1. 　金属基板と、
    　前記金属基板上に配置される半導体素子と、
    　前記金属基板上に一端が配置され、前記半導体素子と電気的に接続される可撓性回路基板であって、前記金属基板の縁部を越えて前記金属基板の外側に延在する可撓性回路基板とを含み、
    　前記可撓性回路基板における前記金属基板の縁部上に位置する部位には、前記金属基板側に板厚付加部材が結合されることを特徴とする、半導体装置。
  2. 　前記金属基板は、打ち抜きにより形成され、
    　前記可撓性回路基板は、前記金属基板における前記打ち抜き時にバリが生じる側に設けられる、請求項１に記載の半導体装置。
  3. 　前記板厚付加部材は、前記可撓性回路基板における基板材料と同一の材料から構成される、請求項１又は２に記載の半導体装置。
  4. 　前記可撓性回路基板は、前記半導体素子とボンディングワイヤにより接続される、請求項１～３のうちのいずれか１項に記載の半導体装置。
  5. 　前記板厚付加部材の板厚は、前記金属基板におけるバリの高さよりも大きい、請求項２に記載の半導体装置。
PCT/JP2012/077917 2011-11-04 2012-10-29 半導体装置 WO2013065647A1 (ja)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP4191309A4 (en) * 2020-08-31 2024-04-17 Huawei Technologies Co., Ltd. OPTOELECTRONIC DEVICE AND OPTOELECTRONIC INTEGRATION METHOD

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11126952A (ja) * 1997-10-22 1999-05-11 Sanyo Electric Co Ltd 混成集積回路装置およびその製造方法
JP2002190653A (ja) * 2000-12-20 2002-07-05 Olympus Optical Co Ltd 電気回路基板とその接続方法
JP2008311294A (ja) * 2007-06-12 2008-12-25 Mitsubishi Materials Corp パワーモジュール用基板の製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11126952A (ja) * 1997-10-22 1999-05-11 Sanyo Electric Co Ltd 混成集積回路装置およびその製造方法
JP2002190653A (ja) * 2000-12-20 2002-07-05 Olympus Optical Co Ltd 電気回路基板とその接続方法
JP2008311294A (ja) * 2007-06-12 2008-12-25 Mitsubishi Materials Corp パワーモジュール用基板の製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP4191309A4 (en) * 2020-08-31 2024-04-17 Huawei Technologies Co., Ltd. OPTOELECTRONIC DEVICE AND OPTOELECTRONIC INTEGRATION METHOD

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