JP2013518445A - ノーマリーオフの窒化ガリウムベースの半導体装置 - Google Patents

ノーマリーオフの窒化ガリウムベースの半導体装置 Download PDF

Info

Publication number
JP2013518445A
JP2013518445A JP2012551278A JP2012551278A JP2013518445A JP 2013518445 A JP2013518445 A JP 2013518445A JP 2012551278 A JP2012551278 A JP 2012551278A JP 2012551278 A JP2012551278 A JP 2012551278A JP 2013518445 A JP2013518445 A JP 2013518445A
Authority
JP
Japan
Prior art keywords
layer
compression
relaxed
forming
gallium nitride
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2012551278A
Other languages
English (en)
Japanese (ja)
Other versions
JP2013518445A5 (enExample
Inventor
ラムダニ ジャマール
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Semiconductor Corp
Original Assignee
National Semiconductor Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by National Semiconductor Corp filed Critical National Semiconductor Corp
Publication of JP2013518445A publication Critical patent/JP2013518445A/ja
Publication of JP2013518445A5 publication Critical patent/JP2013518445A5/ja
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/82—Heterojunctions
    • H10D62/826—Heterojunctions comprising only Group II-VI materials heterojunctions, e.g. CdTe/HgTe heterojunctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/015—Manufacture or treatment of FETs having heterojunction interface channels or heterojunction gate electrodes, e.g. HEMT
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/475—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN

Landscapes

  • Junction Field-Effect Transistors (AREA)
JP2012551278A 2010-01-27 2011-01-27 ノーマリーオフの窒化ガリウムベースの半導体装置 Pending JP2013518445A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/657,757 US8802516B2 (en) 2010-01-27 2010-01-27 Normally-off gallium nitride-based semiconductor devices
US12/657,757 2010-01-27
PCT/US2011/022678 WO2011094382A2 (en) 2010-01-27 2011-01-27 Normally-off gallium nitride-based semiconductor devices

Publications (2)

Publication Number Publication Date
JP2013518445A true JP2013518445A (ja) 2013-05-20
JP2013518445A5 JP2013518445A5 (enExample) 2014-03-13

Family

ID=44308311

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012551278A Pending JP2013518445A (ja) 2010-01-27 2011-01-27 ノーマリーオフの窒化ガリウムベースの半導体装置

Country Status (5)

Country Link
US (2) US8802516B2 (enExample)
JP (1) JP2013518445A (enExample)
CN (1) CN102812554B (enExample)
TW (1) TWI574325B (enExample)
WO (1) WO2011094382A2 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017063172A (ja) * 2015-09-22 2017-03-30 株式会社デンソー 半導体装置

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8624260B2 (en) 2010-01-30 2014-01-07 National Semiconductor Corporation Enhancement-mode GaN MOSFET with low leakage current and improved reliability
JP6231730B2 (ja) * 2011-09-28 2017-11-15 富士通株式会社 化合物半導体装置及びその製造方法
JP5950643B2 (ja) * 2012-03-19 2016-07-13 トランスフォーム・ジャパン株式会社 化合物半導体装置及びその製造方法
CN103489911A (zh) * 2013-09-06 2014-01-01 华为技术有限公司 一种GaN基HEMT器件及其制作方法
US9406799B2 (en) * 2014-10-21 2016-08-02 Globalfoundries Inc. High mobility PMOS and NMOS devices having Si—Ge quantum wells
US9515071B2 (en) * 2014-12-24 2016-12-06 Taiwan Semiconductor Manufacturing Company, Ltd. Asymmetric source/drain depths
CN105118785A (zh) * 2015-09-02 2015-12-02 深圳大学 一种氮化镓异质结场效应晶体管及其形成方法
DE102016110041B4 (de) 2016-05-31 2025-09-18 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Bauelement zum Detektieren von UV-Strahlung und Verfahren zur Herstellung eines Bauelements
US12159929B1 (en) * 2019-12-06 2024-12-03 The Regents Of The University Of California High mobility group-III nitride transistors with strained channels
CN111446169A (zh) * 2020-06-17 2020-07-24 浙江集迈科微电子有限公司 基于源极应力层的GaN器件及制备方法
CN116487259A (zh) * 2022-01-14 2023-07-25 联华电子股份有限公司 高电子迁移率晶体管及其制作方法

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006134935A (ja) * 2004-11-02 2006-05-25 Mitsubishi Electric Corp 半導体装置およびその製造方法
JP2006222160A (ja) * 2005-02-08 2006-08-24 Nec Corp 電界効果トランジスタ及びその製造方法
JP2006332593A (ja) * 2005-04-26 2006-12-07 Sharp Corp 電界効果型トランジスタ
JP2007109830A (ja) * 2005-10-12 2007-04-26 Univ Nagoya 電界効果トランジスタ
JP2009004743A (ja) * 2007-05-18 2009-01-08 Sanken Electric Co Ltd 電界効果半導体装置
JP2009231396A (ja) * 2008-03-19 2009-10-08 Sumitomo Chemical Co Ltd 半導体装置および半導体装置の製造方法
JP2010074047A (ja) * 2008-09-22 2010-04-02 Nippon Telegr & Teleph Corp <Ntt> 窒化物半導体装置
JP2010098047A (ja) * 2008-10-15 2010-04-30 Sanken Electric Co Ltd 窒化物半導体装置

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000277724A (ja) 1999-03-26 2000-10-06 Nagoya Kogyo Univ 電界効果トランジスタとそれを備えた半導体装置及びその製造方法
US20020096675A1 (en) * 2000-11-15 2002-07-25 Cho Alfred Yi Intersubband optical devices that operate at wavelengths shorter than 1.7 um
WO2003015174A2 (en) * 2001-08-07 2003-02-20 Jan Kuzmik High electron mobility devices
JP4865189B2 (ja) 2002-02-21 2012-02-01 古河電気工業株式会社 ＧａＮ系電界効果トランジスタ
JP4525894B2 (ja) * 2003-11-21 2010-08-18 サンケン電気株式会社 半導体素子形成用板状基体及びこの製造方法及びこれを使用した半導体素子
TWI295085B (en) 2003-12-05 2008-03-21 Int Rectifier Corp Field effect transistor with enhanced insulator structure
US7382001B2 (en) 2004-01-23 2008-06-03 International Rectifier Corporation Enhancement mode III-nitride FET
US7170111B2 (en) * 2004-02-05 2007-01-30 Cree, Inc. Nitride heterojunction transistors having charge-transfer induced energy barriers and methods of fabricating the same
JP4850423B2 (ja) 2005-02-16 2012-01-11 新日本無線株式会社 窒化物半導体装置
US7714359B2 (en) * 2005-02-17 2010-05-11 Panasonic Corporation Field effect transistor having nitride semiconductor layer
US8399911B2 (en) 2006-06-07 2013-03-19 Imec Enhancement mode field effect device and the method of production thereof
JP5383974B2 (ja) * 2006-12-27 2014-01-08 住友電工デバイス・イノベーション株式会社 半導体基板および半導体装置
US7525161B2 (en) * 2007-01-31 2009-04-28 International Business Machines Corporation Strained MOS devices using source/drain epitaxy
US8021904B2 (en) * 2007-02-01 2011-09-20 Cree, Inc. Ohmic contacts to nitrogen polarity GaN
US7501670B2 (en) * 2007-03-20 2009-03-10 Velox Semiconductor Corporation Cascode circuit employing a depletion-mode, GaN-based FET
JP2008306130A (ja) * 2007-06-11 2008-12-18 Sanken Electric Co Ltd 電界効果型半導体装置及びその製造方法
US20090140293A1 (en) 2007-11-29 2009-06-04 General Electric Company Heterostructure device and associated method
CN101604704B (zh) * 2008-06-13 2012-09-05 西安能讯微电子有限公司 Hemt器件及其制造方法

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006134935A (ja) * 2004-11-02 2006-05-25 Mitsubishi Electric Corp 半導体装置およびその製造方法
JP2006222160A (ja) * 2005-02-08 2006-08-24 Nec Corp 電界効果トランジスタ及びその製造方法
JP2006332593A (ja) * 2005-04-26 2006-12-07 Sharp Corp 電界効果型トランジスタ
JP2007109830A (ja) * 2005-10-12 2007-04-26 Univ Nagoya 電界効果トランジスタ
JP2009004743A (ja) * 2007-05-18 2009-01-08 Sanken Electric Co Ltd 電界効果半導体装置
JP2009231396A (ja) * 2008-03-19 2009-10-08 Sumitomo Chemical Co Ltd 半導体装置および半導体装置の製造方法
JP2010074047A (ja) * 2008-09-22 2010-04-02 Nippon Telegr & Teleph Corp <Ntt> 窒化物半導体装置
JP2010098047A (ja) * 2008-10-15 2010-04-30 Sanken Electric Co Ltd 窒化物半導体装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017063172A (ja) * 2015-09-22 2017-03-30 株式会社デンソー 半導体装置

Also Published As

Publication number Publication date
WO2011094382A3 (en) 2011-11-17
TW201140702A (en) 2011-11-16
US8802516B2 (en) 2014-08-12
US9385199B2 (en) 2016-07-05
US20140312358A1 (en) 2014-10-23
CN102812554A (zh) 2012-12-05
TWI574325B (zh) 2017-03-11
WO2011094382A2 (en) 2011-08-04
CN102812554B (zh) 2016-08-03
US20110180854A1 (en) 2011-07-28

Similar Documents

Publication Publication Date Title
US8802516B2 (en) Normally-off gallium nitride-based semiconductor devices
JP5071377B2 (ja) 化合物半導体装置及びその製造方法
KR101620987B1 (ko) 갈륨 나이트라이드 완충층에서의 도펀트 확산 변조
JP5202312B2 (ja) 第ｉｉｉ族窒化物エンハンスメント型デバイス
JP6174874B2 (ja) 半導体装置
JP6381881B2 (ja) 高電子移動度トランジスタ及びその駆動方法
US20190326404A1 (en) Semiconductor device and method for manufacturing the same
KR101092467B1 (ko) 인헨스먼트 노말리 오프 질화물 반도체 소자 및 그 제조방법
JPWO2007122790A1 (ja) 電界効果トランジスタ
JP2018152583A (ja) 高電子移動度トランジスタ
JP2013004967A (ja) エンハンスメント型ｉｉｉ−ｖ族高電子移動度トランジスタ（ｈｅｍｔ）および製造方法
TW201413944A (zh) 半導體裝置及半導體裝置的製造方法
CN102365747A (zh) 补偿门极misfet及其制造方法
KR20110099546A (ko) 듀얼 디플리션을 나타내는 고 전자 이동도 트랜지스터 및 그 제조방법
US9263530B2 (en) Field effect transistor
JP2009099691A (ja) 電界効果半導体装置の製造方法
JP2020523781A (ja) ＧａＮスペーサ厚の均一性改善のために選択及び非選択エッチング層を用いたエンハンスメントモードＧａＮトランジスタ
JP2009026975A (ja) 半導体装置
JP2017157589A (ja) 半導体装置および半導体装置の製造方法
JP2010206125A (ja) 窒化ガリウム系高電子移動度トランジスタ
KR20190112523A (ko) 이종접합 전계효과 트랜지스터 및 그 제조 방법
US8283700B2 (en) Field effect transistor and manufacturing method thereof
JP6707837B2 (ja) 半導体結晶基板、半導体装置、半導体結晶基板の製造方法及び半導体装置の製造方法
JP6974049B2 (ja) 半導体装置および半導体装置の製造方法
JP2015008244A (ja) ヘテロ接合電界効果型トランジスタおよびその製造方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20140122

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20140122

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20141211

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20141216

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20150316

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20150416

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20150513

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20160315

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20160615

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20160812

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20161115