JP2013518445A5 - - Google Patents

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Publication number
JP2013518445A5
JP2013518445A5 JP2012551278A JP2012551278A JP2013518445A5 JP 2013518445 A5 JP2013518445 A5 JP 2013518445A5 JP 2012551278 A JP2012551278 A JP 2012551278A JP 2012551278 A JP2012551278 A JP 2012551278A JP 2013518445 A5 JP2013518445 A5 JP 2013518445A5
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JP
Japan
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layer
forming
tensile
relaxed
compression
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JP2012551278A
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English (en)
Japanese (ja)
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JP2013518445A (ja
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Priority claimed from US12/657,757 external-priority patent/US8802516B2/en
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Publication of JP2013518445A publication Critical patent/JP2013518445A/ja
Publication of JP2013518445A5 publication Critical patent/JP2013518445A5/ja
Pending legal-status Critical Current

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JP2012551278A 2010-01-27 2011-01-27 ノーマリーオフの窒化ガリウムベースの半導体装置 Pending JP2013518445A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/657,757 US8802516B2 (en) 2010-01-27 2010-01-27 Normally-off gallium nitride-based semiconductor devices
US12/657,757 2010-01-27
PCT/US2011/022678 WO2011094382A2 (en) 2010-01-27 2011-01-27 Normally-off gallium nitride-based semiconductor devices

Publications (2)

Publication Number Publication Date
JP2013518445A JP2013518445A (ja) 2013-05-20
JP2013518445A5 true JP2013518445A5 (enExample) 2014-03-13

Family

ID=44308311

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012551278A Pending JP2013518445A (ja) 2010-01-27 2011-01-27 ノーマリーオフの窒化ガリウムベースの半導体装置

Country Status (5)

Country Link
US (2) US8802516B2 (enExample)
JP (1) JP2013518445A (enExample)
CN (1) CN102812554B (enExample)
TW (1) TWI574325B (enExample)
WO (1) WO2011094382A2 (enExample)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8624260B2 (en) 2010-01-30 2014-01-07 National Semiconductor Corporation Enhancement-mode GaN MOSFET with low leakage current and improved reliability
JP6231730B2 (ja) * 2011-09-28 2017-11-15 富士通株式会社 化合物半導体装置及びその製造方法
JP5950643B2 (ja) * 2012-03-19 2016-07-13 トランスフォーム・ジャパン株式会社 化合物半導体装置及びその製造方法
CN103489911A (zh) * 2013-09-06 2014-01-01 华为技术有限公司 一种GaN基HEMT器件及其制作方法
US9406799B2 (en) * 2014-10-21 2016-08-02 Globalfoundries Inc. High mobility PMOS and NMOS devices having Si—Ge quantum wells
US9515071B2 (en) * 2014-12-24 2016-12-06 Taiwan Semiconductor Manufacturing Company, Ltd. Asymmetric source/drain depths
CN105118785A (zh) * 2015-09-02 2015-12-02 深圳大学 一种氮化镓异质结场效应晶体管及其形成方法
JP6701767B2 (ja) * 2015-09-22 2020-05-27 株式会社デンソー 半導体装置
DE102016110041B4 (de) 2016-05-31 2025-09-18 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Bauelement zum Detektieren von UV-Strahlung und Verfahren zur Herstellung eines Bauelements
US12159929B1 (en) * 2019-12-06 2024-12-03 The Regents Of The University Of California High mobility group-III nitride transistors with strained channels
CN111446169A (zh) * 2020-06-17 2020-07-24 浙江集迈科微电子有限公司 基于源极应力层的GaN器件及制备方法
CN116487259A (zh) * 2022-01-14 2023-07-25 联华电子股份有限公司 高电子迁移率晶体管及其制作方法

Family Cites Families (26)

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JP2000277724A (ja) 1999-03-26 2000-10-06 Nagoya Kogyo Univ 電界効果トランジスタとそれを備えた半導体装置及びその製造方法
US20020096675A1 (en) * 2000-11-15 2002-07-25 Cho Alfred Yi Intersubband optical devices that operate at wavelengths shorter than 1.7 um
WO2003015174A2 (en) * 2001-08-07 2003-02-20 Jan Kuzmik High electron mobility devices
JP4865189B2 (ja) 2002-02-21 2012-02-01 古河電気工業株式会社 ＧａＮ系電界効果トランジスタ
JP4525894B2 (ja) * 2003-11-21 2010-08-18 サンケン電気株式会社 半導体素子形成用板状基体及びこの製造方法及びこれを使用した半導体素子
TWI295085B (en) 2003-12-05 2008-03-21 Int Rectifier Corp Field effect transistor with enhanced insulator structure
US7382001B2 (en) 2004-01-23 2008-06-03 International Rectifier Corporation Enhancement mode III-nitride FET
US7170111B2 (en) * 2004-02-05 2007-01-30 Cree, Inc. Nitride heterojunction transistors having charge-transfer induced energy barriers and methods of fabricating the same
JP2006134935A (ja) * 2004-11-02 2006-05-25 Mitsubishi Electric Corp 半導体装置およびその製造方法
JP4940557B2 (ja) * 2005-02-08 2012-05-30 日本電気株式会社 電界効果トランジスタ及びその製造方法
JP4850423B2 (ja) 2005-02-16 2012-01-11 新日本無線株式会社 窒化物半導体装置
US7714359B2 (en) * 2005-02-17 2010-05-11 Panasonic Corporation Field effect transistor having nitride semiconductor layer
JP4369438B2 (ja) * 2005-04-26 2009-11-18 シャープ株式会社 電界効果型トランジスタ
JP2007109830A (ja) * 2005-10-12 2007-04-26 Univ Nagoya 電界効果トランジスタ
US8399911B2 (en) 2006-06-07 2013-03-19 Imec Enhancement mode field effect device and the method of production thereof
JP5383974B2 (ja) * 2006-12-27 2014-01-08 住友電工デバイス・イノベーション株式会社 半導体基板および半導体装置
US7525161B2 (en) * 2007-01-31 2009-04-28 International Business Machines Corporation Strained MOS devices using source/drain epitaxy
US8021904B2 (en) * 2007-02-01 2011-09-20 Cree, Inc. Ohmic contacts to nitrogen polarity GaN
US7501670B2 (en) * 2007-03-20 2009-03-10 Velox Semiconductor Corporation Cascode circuit employing a depletion-mode, GaN-based FET
JP5397825B2 (ja) * 2007-05-18 2014-01-22 サンケン電気株式会社 電界効果半導体装置
JP2008306130A (ja) * 2007-06-11 2008-12-18 Sanken Electric Co Ltd 電界効果型半導体装置及びその製造方法
US20090140293A1 (en) 2007-11-29 2009-06-04 General Electric Company Heterostructure device and associated method
JP2009231396A (ja) * 2008-03-19 2009-10-08 Sumitomo Chemical Co Ltd 半導体装置および半導体装置の製造方法
CN101604704B (zh) * 2008-06-13 2012-09-05 西安能讯微电子有限公司 Hemt器件及其制造方法
JP5290682B2 (ja) * 2008-09-22 2013-09-18 日本電信電話株式会社 窒化物半導体装置
JP2010098047A (ja) * 2008-10-15 2010-04-30 Sanken Electric Co Ltd 窒化物半導体装置

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