TWI574325B - 常關型氮化鎵基半導體裝置 - Google Patents

常關型氮化鎵基半導體裝置 Download PDF

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Publication number
TWI574325B
TWI574325B TW100102794A TW100102794A TWI574325B TW I574325 B TWI574325 B TW I574325B TW 100102794 A TW100102794 A TW 100102794A TW 100102794 A TW100102794 A TW 100102794A TW I574325 B TWI574325 B TW I574325B
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TW
Taiwan
Prior art keywords
layer
relaxed
semiconductor device
forming
gallium nitride
Prior art date
Application number
TW100102794A
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English (en)
Chinese (zh)
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TW201140702A (en
Inventor
賈瑪 朗達尼
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國家半導體公司
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Publication date
Application filed by 國家半導體公司 filed Critical 國家半導體公司
Publication of TW201140702A publication Critical patent/TW201140702A/zh
Application granted granted Critical
Publication of TWI574325B publication Critical patent/TWI574325B/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/82—Heterojunctions
    • H10D62/826—Heterojunctions comprising only Group II-VI materials heterojunctions, e.g. CdTe/HgTe heterojunctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/015—Manufacture or treatment of FETs having heterojunction interface channels or heterojunction gate electrodes, e.g. HEMT
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/475—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN

Landscapes

  • Junction Field-Effect Transistors (AREA)
TW100102794A 2010-01-27 2011-01-26 常關型氮化鎵基半導體裝置 TWI574325B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US12/657,757 US8802516B2 (en) 2010-01-27 2010-01-27 Normally-off gallium nitride-based semiconductor devices

Publications (2)

Publication Number Publication Date
TW201140702A TW201140702A (en) 2011-11-16
TWI574325B true TWI574325B (zh) 2017-03-11

Family

ID=44308311

Family Applications (1)

Application Number Title Priority Date Filing Date
TW100102794A TWI574325B (zh) 2010-01-27 2011-01-26 常關型氮化鎵基半導體裝置

Country Status (5)

Country Link
US (2) US8802516B2 (enExample)
JP (1) JP2013518445A (enExample)
CN (1) CN102812554B (enExample)
TW (1) TWI574325B (enExample)
WO (1) WO2011094382A2 (enExample)

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US8624260B2 (en) 2010-01-30 2014-01-07 National Semiconductor Corporation Enhancement-mode GaN MOSFET with low leakage current and improved reliability
JP6231730B2 (ja) * 2011-09-28 2017-11-15 富士通株式会社 化合物半導体装置及びその製造方法
JP5950643B2 (ja) * 2012-03-19 2016-07-13 トランスフォーム・ジャパン株式会社 化合物半導体装置及びその製造方法
CN103489911A (zh) * 2013-09-06 2014-01-01 华为技术有限公司 一种GaN基HEMT器件及其制作方法
US9406799B2 (en) * 2014-10-21 2016-08-02 Globalfoundries Inc. High mobility PMOS and NMOS devices having Si—Ge quantum wells
US9515071B2 (en) * 2014-12-24 2016-12-06 Taiwan Semiconductor Manufacturing Company, Ltd. Asymmetric source/drain depths
CN105118785A (zh) * 2015-09-02 2015-12-02 深圳大学 一种氮化镓异质结场效应晶体管及其形成方法
JP6701767B2 (ja) * 2015-09-22 2020-05-27 株式会社デンソー 半導体装置
DE102016110041B4 (de) 2016-05-31 2025-09-18 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Bauelement zum Detektieren von UV-Strahlung und Verfahren zur Herstellung eines Bauelements
US12159929B1 (en) * 2019-12-06 2024-12-03 The Regents Of The University Of California High mobility group-III nitride transistors with strained channels
CN111446169A (zh) * 2020-06-17 2020-07-24 浙江集迈科微电子有限公司 基于源极应力层的GaN器件及制备方法
CN116487259A (zh) * 2022-01-14 2023-07-25 联华电子股份有限公司 高电子迁移率晶体管及其制作方法

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JP2007109830A (ja) * 2005-10-12 2007-04-26 Univ Nagoya 電界効果トランジスタ
US20080185608A1 (en) * 2007-02-01 2008-08-07 Cree, Inc. Ohmic contacts to nitrogen polarity GaN

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US20020096675A1 (en) * 2000-11-15 2002-07-25 Cho Alfred Yi Intersubband optical devices that operate at wavelengths shorter than 1.7 um
JP4865189B2 (ja) 2002-02-21 2012-02-01 古河電気工業株式会社 ＧａＮ系電界効果トランジスタ
JP4525894B2 (ja) * 2003-11-21 2010-08-18 サンケン電気株式会社 半導体素子形成用板状基体及びこの製造方法及びこれを使用した半導体素子
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Patent Citations (3)

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Publication number Priority date Publication date Assignee Title
US20040155260A1 (en) * 2001-08-07 2004-08-12 Jan Kuzmik High electron mobility devices
JP2007109830A (ja) * 2005-10-12 2007-04-26 Univ Nagoya 電界効果トランジスタ
US20080185608A1 (en) * 2007-02-01 2008-08-07 Cree, Inc. Ohmic contacts to nitrogen polarity GaN

Also Published As

Publication number Publication date
WO2011094382A3 (en) 2011-11-17
TW201140702A (en) 2011-11-16
US8802516B2 (en) 2014-08-12
US9385199B2 (en) 2016-07-05
US20140312358A1 (en) 2014-10-23
CN102812554A (zh) 2012-12-05
JP2013518445A (ja) 2013-05-20
WO2011094382A2 (en) 2011-08-04
CN102812554B (zh) 2016-08-03
US20110180854A1 (en) 2011-07-28

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