CN102812554B - 常关型氮化镓基半导体器件 - Google Patents

常关型氮化镓基半导体器件 Download PDF

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Publication number
CN102812554B
CN102812554B CN201180014938.3A CN201180014938A CN102812554B CN 102812554 B CN102812554 B CN 102812554B CN 201180014938 A CN201180014938 A CN 201180014938A CN 102812554 B CN102812554 B CN 102812554B
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layer
compressive
tension
semiconductor device
forming
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CN102812554A (zh
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J·拉达尼
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National Semiconductor Corp
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National Semiconductor Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/82—Heterojunctions
    • H10D62/826—Heterojunctions comprising only Group II-VI materials heterojunctions, e.g. CdTe/HgTe heterojunctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/015—Manufacture or treatment of FETs having heterojunction interface channels or heterojunction gate electrodes, e.g. HEMT
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/475—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN

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  • Junction Field-Effect Transistors (AREA)
CN201180014938.3A 2010-01-27 2011-01-27 常关型氮化镓基半导体器件 Active CN102812554B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/657,757 US8802516B2 (en) 2010-01-27 2010-01-27 Normally-off gallium nitride-based semiconductor devices
US12/657,757 2010-01-27
PCT/US2011/022678 WO2011094382A2 (en) 2010-01-27 2011-01-27 Normally-off gallium nitride-based semiconductor devices

Publications (2)

Publication Number Publication Date
CN102812554A CN102812554A (zh) 2012-12-05
CN102812554B true CN102812554B (zh) 2016-08-03

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CN201180014938.3A Active CN102812554B (zh) 2010-01-27 2011-01-27 常关型氮化镓基半导体器件

Country Status (5)

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US (2) US8802516B2 (enExample)
JP (1) JP2013518445A (enExample)
CN (1) CN102812554B (enExample)
TW (1) TWI574325B (enExample)
WO (1) WO2011094382A2 (enExample)

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US8624260B2 (en) 2010-01-30 2014-01-07 National Semiconductor Corporation Enhancement-mode GaN MOSFET with low leakage current and improved reliability
JP6231730B2 (ja) * 2011-09-28 2017-11-15 富士通株式会社 化合物半導体装置及びその製造方法
JP5950643B2 (ja) * 2012-03-19 2016-07-13 トランスフォーム・ジャパン株式会社 化合物半導体装置及びその製造方法
CN103489911A (zh) * 2013-09-06 2014-01-01 华为技术有限公司 一种GaN基HEMT器件及其制作方法
US9406799B2 (en) * 2014-10-21 2016-08-02 Globalfoundries Inc. High mobility PMOS and NMOS devices having Si—Ge quantum wells
US9515071B2 (en) * 2014-12-24 2016-12-06 Taiwan Semiconductor Manufacturing Company, Ltd. Asymmetric source/drain depths
CN105118785A (zh) * 2015-09-02 2015-12-02 深圳大学 一种氮化镓异质结场效应晶体管及其形成方法
JP6701767B2 (ja) * 2015-09-22 2020-05-27 株式会社デンソー 半導体装置
DE102016110041B4 (de) 2016-05-31 2025-09-18 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Bauelement zum Detektieren von UV-Strahlung und Verfahren zur Herstellung eines Bauelements
US12159929B1 (en) * 2019-12-06 2024-12-03 The Regents Of The University Of California High mobility group-III nitride transistors with strained channels
CN111446169A (zh) * 2020-06-17 2020-07-24 浙江集迈科微电子有限公司 基于源极应力层的GaN器件及制备方法
CN116487259A (zh) * 2022-01-14 2023-07-25 联华电子股份有限公司 高电子迁移率晶体管及其制作方法

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US20040155260A1 (en) * 2001-08-07 2004-08-12 Jan Kuzmik High electron mobility devices
US20050110043A1 (en) * 2003-11-21 2005-05-26 Sanken Electric Co., Ltd. Nitride semiconductor substrate, method of fabrication thereof, and semiconductor element built thereon
US20080185608A1 (en) * 2007-02-01 2008-08-07 Cree, Inc. Ohmic contacts to nitrogen polarity GaN
CN101604704A (zh) * 2008-06-13 2009-12-16 张乃千 Hemt器件及其制造方法

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JP2000277724A (ja) 1999-03-26 2000-10-06 Nagoya Kogyo Univ 電界効果トランジスタとそれを備えた半導体装置及びその製造方法
US20020096675A1 (en) * 2000-11-15 2002-07-25 Cho Alfred Yi Intersubband optical devices that operate at wavelengths shorter than 1.7 um
JP4865189B2 (ja) 2002-02-21 2012-02-01 古河電気工業株式会社 ＧａＮ系電界効果トランジスタ
TWI295085B (en) 2003-12-05 2008-03-21 Int Rectifier Corp Field effect transistor with enhanced insulator structure
US7382001B2 (en) 2004-01-23 2008-06-03 International Rectifier Corporation Enhancement mode III-nitride FET
US7170111B2 (en) * 2004-02-05 2007-01-30 Cree, Inc. Nitride heterojunction transistors having charge-transfer induced energy barriers and methods of fabricating the same
JP2006134935A (ja) * 2004-11-02 2006-05-25 Mitsubishi Electric Corp 半導体装置およびその製造方法
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JP4850423B2 (ja) 2005-02-16 2012-01-11 新日本無線株式会社 窒化物半導体装置
US7714359B2 (en) * 2005-02-17 2010-05-11 Panasonic Corporation Field effect transistor having nitride semiconductor layer
JP4369438B2 (ja) * 2005-04-26 2009-11-18 シャープ株式会社 電界効果型トランジスタ
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US8399911B2 (en) 2006-06-07 2013-03-19 Imec Enhancement mode field effect device and the method of production thereof
JP5383974B2 (ja) * 2006-12-27 2014-01-08 住友電工デバイス・イノベーション株式会社 半導体基板および半導体装置
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JP5290682B2 (ja) * 2008-09-22 2013-09-18 日本電信電話株式会社 窒化物半導体装置
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Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040155260A1 (en) * 2001-08-07 2004-08-12 Jan Kuzmik High electron mobility devices
US20050110043A1 (en) * 2003-11-21 2005-05-26 Sanken Electric Co., Ltd. Nitride semiconductor substrate, method of fabrication thereof, and semiconductor element built thereon
US20080185608A1 (en) * 2007-02-01 2008-08-07 Cree, Inc. Ohmic contacts to nitrogen polarity GaN
CN101604704A (zh) * 2008-06-13 2009-12-16 张乃千 Hemt器件及其制造方法

Also Published As

Publication number Publication date
WO2011094382A3 (en) 2011-11-17
TW201140702A (en) 2011-11-16
US8802516B2 (en) 2014-08-12
US9385199B2 (en) 2016-07-05
US20140312358A1 (en) 2014-10-23
CN102812554A (zh) 2012-12-05
JP2013518445A (ja) 2013-05-20
TWI574325B (zh) 2017-03-11
WO2011094382A2 (en) 2011-08-04
US20110180854A1 (en) 2011-07-28

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