JP2016518723A5 - - Google Patents

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Publication number
JP2016518723A5
JP2016518723A5 JP2016512988A JP2016512988A JP2016518723A5 JP 2016518723 A5 JP2016518723 A5 JP 2016518723A5 JP 2016512988 A JP2016512988 A JP 2016512988A JP 2016512988 A JP2016512988 A JP 2016512988A JP 2016518723 A5 JP2016518723 A5 JP 2016518723A5
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JP
Japan
Prior art keywords
semiconductor device
gate
isolation structure
forming
gan fet
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2016512988A
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English (en)
Japanese (ja)
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JP2016518723A (ja
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Publication date
Priority claimed from US13/886,429 external-priority patent/US9054027B2/en
Application filed filed Critical
Publication of JP2016518723A publication Critical patent/JP2016518723A/ja
Publication of JP2016518723A5 publication Critical patent/JP2016518723A5/ja
Pending legal-status Critical Current

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JP2016512988A 2013-05-03 2014-05-05 Ｉｉｉ−窒化物トランジスタレイアウト Pending JP2016518723A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13/886,429 2013-05-03
US13/886,429 US9054027B2 (en) 2013-05-03 2013-05-03 III-nitride device and method having a gate isolating structure
PCT/US2014/036788 WO2014179796A1 (en) 2013-05-03 2014-05-05 Iii-nitride transistor layout

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2019038204A Division JP2019117935A (ja) 2013-05-03 2019-03-04 Ｉｉｉ−窒化物トランジスタレイアウト

Publications (2)

Publication Number Publication Date
JP2016518723A JP2016518723A (ja) 2016-06-23
JP2016518723A5 true JP2016518723A5 (enExample) 2017-06-08

Family

ID=51840998

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2016512988A Pending JP2016518723A (ja) 2013-05-03 2014-05-05 Ｉｉｉ−窒化物トランジスタレイアウト
JP2019038204A Pending JP2019117935A (ja) 2013-05-03 2019-03-04 Ｉｉｉ−窒化物トランジスタレイアウト

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2019038204A Pending JP2019117935A (ja) 2013-05-03 2019-03-04 Ｉｉｉ−窒化物トランジスタレイアウト

Country Status (4)

Country Link
US (2) US9054027B2 (enExample)
JP (2) JP2016518723A (enExample)
CN (1) CN105229792B (enExample)
WO (1) WO2014179796A1 (enExample)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015173237A (ja) * 2014-03-12 2015-10-01 株式会社東芝 半導体装置
US9728600B2 (en) * 2015-09-11 2017-08-08 Nxp Usa, Inc. Partially biased isolation in semiconductor devices
US9882041B1 (en) * 2016-11-17 2018-01-30 Texas Instruments Incorporated HEMT having conduction barrier between drain fingertip and source
US10381456B2 (en) 2017-05-04 2019-08-13 Texas Instruments Incorporated Group IIIA-N HEMT with a tunnel diode in the gate stack
US10811514B2 (en) * 2018-03-28 2020-10-20 Semiconductor Components Industries, Llc Electronic device including an enhancement-mode HEMT and a method of using the same
DE102020112069B4 (de) * 2020-02-27 2022-03-03 Taiwan Semiconductor Manufacturing Co. Ltd. Source-leckstromunterdrückung durch source-umgebende gate-struktur und verfahren zur herstellung der gate-struktur
WO2022051173A1 (en) * 2020-09-01 2022-03-10 Power Integrations, Inc. A die seal ring including a two dimensional electron gas region
US11742390B2 (en) 2020-10-30 2023-08-29 Texas Instruments Incorporated Electronic device with gallium nitride transistors and method of making same
US20220139709A1 (en) * 2020-11-05 2022-05-05 International Business Machines Corporation Confined gallium nitride epitaxial layers
CN119789461A (zh) * 2020-12-01 2025-04-08 深圳市晶相技术有限公司 一种功率器件及其应用与制造方法
CN116093165B (zh) * 2023-04-10 2024-07-23 深圳市晶扬电子有限公司 一种紧凑的低电容型肖特基二极管
FR3155362A1 (fr) 2023-11-09 2025-05-16 Commissariat A L'energie Atomique Et Aux Energies Alternatives Dispositif microélectronique à courants de fuite réduits

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11121468A (ja) * 1997-10-08 1999-04-30 Sanyo Electric Co Ltd 半導体装置
US7030428B2 (en) * 2001-12-03 2006-04-18 Cree, Inc. Strain balanced nitride heterojunction transistors
JP2007059595A (ja) * 2005-08-24 2007-03-08 Toshiba Corp 窒化物半導体素子
JP5125512B2 (ja) * 2005-09-30 2013-01-23 日本電気株式会社 電界効果トランジスタ
JP2009522812A (ja) * 2006-01-09 2009-06-11 インターナショナル レクティファイアー コーポレイション 電界緩和機能を有するｉｉｉ族窒化物電力半導体
JP4908886B2 (ja) * 2006-03-23 2012-04-04 日本電信電話株式会社 半導体装置
JP2008112868A (ja) * 2006-10-30 2008-05-15 Eudyna Devices Inc 半導体装置およびその製造方法
US9147644B2 (en) * 2008-02-26 2015-09-29 International Rectifier Corporation Semiconductor device and passive component integration in a semiconductor package
JP5526470B2 (ja) * 2007-09-03 2014-06-18 サンケン電気株式会社 窒化物系化合物半導体装置
US7985986B2 (en) * 2008-07-31 2011-07-26 Cree, Inc. Normally-off semiconductor devices
JP5390983B2 (ja) * 2008-08-08 2014-01-15 古河電気工業株式会社 電界効果トランジスタおよび電界効果トランジスタの製造方法
JP5553997B2 (ja) * 2009-02-06 2014-07-23 古河電気工業株式会社 トランジスタおよびその製造方法
WO2010151721A1 (en) 2009-06-25 2010-12-29 The Government Of The United States Of America, As Represented By The Secretary Of The Navy Transistor with enhanced channel charge inducing material layer and threshold voltage control
CN102484049B (zh) * 2009-08-07 2015-05-20 日本碍子株式会社 半导体元件用外延基板、半导体元件用外延基板的制造方法以及半导体元件
JP2011124385A (ja) * 2009-12-10 2011-06-23 Sanken Electric Co Ltd 化合物半導体装置及びその製造方法
US8389977B2 (en) 2009-12-10 2013-03-05 Transphorm Inc. Reverse side engineered III-nitride devices
JP5636867B2 (ja) * 2010-10-19 2014-12-10 富士通株式会社 半導体装置及び半導体装置の製造方法
US20120153351A1 (en) * 2010-12-21 2012-06-21 International Rectifier Corporation Stress modulated group III-V semiconductor device and related method
US8643062B2 (en) 2011-02-02 2014-02-04 Transphorm Inc. III-N device structures and methods
JP5712231B2 (ja) * 2011-02-15 2015-05-07 シャープ株式会社 半導体装置
JP2012238808A (ja) * 2011-05-13 2012-12-06 Sharp Corp 電界効果トランジスタ
JP2013077638A (ja) * 2011-09-29 2013-04-25 Sumitomo Electric Ind Ltd 半導体装置
US20130087803A1 (en) * 2011-10-06 2013-04-11 Epowersoft, Inc. Monolithically integrated hemt and schottky diode
US8759879B1 (en) * 2013-05-03 2014-06-24 Texas Instruments Incorporated RESURF III-nitride HEMTs

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