JP2016518723A - Ｉｉｉ−窒化物トランジスタレイアウト - Google Patents

Ｉｉｉ−窒化物トランジスタレイアウト Download PDF

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Publication number
JP2016518723A
JP2016518723A JP2016512988A JP2016512988A JP2016518723A JP 2016518723 A JP2016518723 A JP 2016518723A JP 2016512988 A JP2016512988 A JP 2016512988A JP 2016512988 A JP2016512988 A JP 2016512988A JP 2016518723 A JP2016518723 A JP 2016518723A
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Japan
Prior art keywords
gate
semiconductor device
isolation structure
isolation
continuous
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JP2016512988A
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English (en)
Japanese (ja)
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JP2016518723A5 (enExample
Inventor
ペンハルカル サミール
ペンハルカル サミール
ティピルネニ ナビーン
ティピルネニ ナビーン
ジョー ジュンウォー
ジョー ジュンウォー
Original Assignee
日本テキサス・インスツルメンツ株式会社
テキサス インスツルメンツ インコーポレイテッド
テキサス インスツルメンツ インコーポレイテッド
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Publication of JP2016518723A publication Critical patent/JP2016518723A/ja
Publication of JP2016518723A5 publication Critical patent/JP2016518723A5/ja
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/015—Manufacture or treatment of FETs having heterojunction interface channels or heterojunction gate electrodes, e.g. HEMT
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/475—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs
    • H10D30/4755—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs having wide bandgap charge-carrier supplying layers, e.g. modulation doped HEMTs such as n-AlGaAs/GaAs HEMTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN

Landscapes

  • Junction Field-Effect Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
JP2016512988A 2013-05-03 2014-05-05 Ｉｉｉ−窒化物トランジスタレイアウト Pending JP2016518723A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13/886,429 2013-05-03
US13/886,429 US9054027B2 (en) 2013-05-03 2013-05-03 III-nitride device and method having a gate isolating structure
PCT/US2014/036788 WO2014179796A1 (en) 2013-05-03 2014-05-05 Iii-nitride transistor layout

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2019038204A Division JP2019117935A (ja) 2013-05-03 2019-03-04 Ｉｉｉ−窒化物トランジスタレイアウト

Publications (2)

Publication Number Publication Date
JP2016518723A true JP2016518723A (ja) 2016-06-23
JP2016518723A5 JP2016518723A5 (enExample) 2017-06-08

Family

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Family Applications (2)

Application Number Title Priority Date Filing Date
JP2016512988A Pending JP2016518723A (ja) 2013-05-03 2014-05-05 Ｉｉｉ−窒化物トランジスタレイアウト
JP2019038204A Pending JP2019117935A (ja) 2013-05-03 2019-03-04 Ｉｉｉ−窒化物トランジスタレイアウト

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2019038204A Pending JP2019117935A (ja) 2013-05-03 2019-03-04 Ｉｉｉ−窒化物トランジスタレイアウト

Country Status (4)

Country Link
US (2) US9054027B2 (enExample)
JP (2) JP2016518723A (enExample)
CN (1) CN105229792B (enExample)
WO (1) WO2014179796A1 (enExample)

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JP2015173237A (ja) * 2014-03-12 2015-10-01 株式会社東芝 半導体装置
US9728600B2 (en) * 2015-09-11 2017-08-08 Nxp Usa, Inc. Partially biased isolation in semiconductor devices
US9882041B1 (en) * 2016-11-17 2018-01-30 Texas Instruments Incorporated HEMT having conduction barrier between drain fingertip and source
US10381456B2 (en) 2017-05-04 2019-08-13 Texas Instruments Incorporated Group IIIA-N HEMT with a tunnel diode in the gate stack
US10811514B2 (en) * 2018-03-28 2020-10-20 Semiconductor Components Industries, Llc Electronic device including an enhancement-mode HEMT and a method of using the same
DE102020112069B4 (de) * 2020-02-27 2022-03-03 Taiwan Semiconductor Manufacturing Co. Ltd. Source-leckstromunterdrückung durch source-umgebende gate-struktur und verfahren zur herstellung der gate-struktur
WO2022051173A1 (en) * 2020-09-01 2022-03-10 Power Integrations, Inc. A die seal ring including a two dimensional electron gas region
US11742390B2 (en) 2020-10-30 2023-08-29 Texas Instruments Incorporated Electronic device with gallium nitride transistors and method of making same
US20220139709A1 (en) * 2020-11-05 2022-05-05 International Business Machines Corporation Confined gallium nitride epitaxial layers
CN119789461A (zh) * 2020-12-01 2025-04-08 深圳市晶相技术有限公司 一种功率器件及其应用与制造方法
CN116093165B (zh) * 2023-04-10 2024-07-23 深圳市晶扬电子有限公司 一种紧凑的低电容型肖特基二极管
FR3155362A1 (fr) 2023-11-09 2025-05-16 Commissariat A L'energie Atomique Et Aux Energies Alternatives Dispositif microélectronique à courants de fuite réduits

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WO2007040160A1 (ja) * 2005-09-30 2007-04-12 Nec Corporation 電界効果トランジスタ
JP2007258406A (ja) * 2006-03-23 2007-10-04 Nippon Telegr & Teleph Corp <Ntt> 半導体装置
JP2009060049A (ja) * 2007-09-03 2009-03-19 Sanken Electric Co Ltd 窒化物系化合物半導体装置
JP2010062552A (ja) * 2008-08-08 2010-03-18 Furukawa Electric Co Ltd:The 電界効果トランジスタおよび電界効果トランジスタの製造方法
JP2011124385A (ja) * 2009-12-10 2011-06-23 Sanken Electric Co Ltd 化合物半導体装置及びその製造方法
WO2012111393A1 (ja) * 2011-02-15 2012-08-23 シャープ株式会社 半導体装置
JP2012238808A (ja) * 2011-05-13 2012-12-06 Sharp Corp 電界効果トランジスタ
JP2013077638A (ja) * 2011-09-29 2013-04-25 Sumitomo Electric Ind Ltd 半導体装置

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JPH11121468A (ja) * 1997-10-08 1999-04-30 Sanyo Electric Co Ltd 半導体装置
US7030428B2 (en) * 2001-12-03 2006-04-18 Cree, Inc. Strain balanced nitride heterojunction transistors
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JP2008112868A (ja) * 2006-10-30 2008-05-15 Eudyna Devices Inc 半導体装置およびその製造方法
US9147644B2 (en) * 2008-02-26 2015-09-29 International Rectifier Corporation Semiconductor device and passive component integration in a semiconductor package
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JP5553997B2 (ja) * 2009-02-06 2014-07-23 古河電気工業株式会社 トランジスタおよびその製造方法
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WO2007040160A1 (ja) * 2005-09-30 2007-04-12 Nec Corporation 電界効果トランジスタ
JP2007258406A (ja) * 2006-03-23 2007-10-04 Nippon Telegr & Teleph Corp <Ntt> 半導体装置
JP2009060049A (ja) * 2007-09-03 2009-03-19 Sanken Electric Co Ltd 窒化物系化合物半導体装置
JP2010062552A (ja) * 2008-08-08 2010-03-18 Furukawa Electric Co Ltd:The 電界効果トランジスタおよび電界効果トランジスタの製造方法
JP2011124385A (ja) * 2009-12-10 2011-06-23 Sanken Electric Co Ltd 化合物半導体装置及びその製造方法
WO2012111393A1 (ja) * 2011-02-15 2012-08-23 シャープ株式会社 半導体装置
JP2012238808A (ja) * 2011-05-13 2012-12-06 Sharp Corp 電界効果トランジスタ
JP2013077638A (ja) * 2011-09-29 2013-04-25 Sumitomo Electric Ind Ltd 半導体装置

Also Published As

Publication number Publication date
JP2019117935A (ja) 2019-07-18
CN105229792A (zh) 2016-01-06
US9553151B2 (en) 2017-01-24
WO2014179796A1 (en) 2014-11-06
US20140327011A1 (en) 2014-11-06
US20150270357A1 (en) 2015-09-24
CN105229792B (zh) 2019-10-08
US9054027B2 (en) 2015-06-09

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