CN105229792B - Iii族氮化物晶体管布局 - Google Patents

Iii族氮化物晶体管布局 Download PDF

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Publication number
CN105229792B
CN105229792B CN201480024829.3A CN201480024829A CN105229792B CN 105229792 B CN105229792 B CN 105229792B CN 201480024829 A CN201480024829 A CN 201480024829A CN 105229792 B CN105229792 B CN 105229792B
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China
Prior art keywords
gate structure
gate
layer
semiconductor device
barrier layer
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CN201480024829.3A
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English (en)
Chinese (zh)
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CN105229792A (zh
Inventor
S·彭德哈卡尔
N·特珀尔内尼
J·约翰
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Texas Instruments Inc
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Texas Instruments Inc
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/015—Manufacture or treatment of FETs having heterojunction interface channels or heterojunction gate electrodes, e.g. HEMT
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/475—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs
    • H10D30/4755—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs having wide bandgap charge-carrier supplying layers, e.g. modulation doped HEMTs such as n-AlGaAs/GaAs HEMTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN

Landscapes

  • Junction Field-Effect Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
CN201480024829.3A 2013-05-03 2014-05-05 Iii族氮化物晶体管布局 Active CN105229792B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13/886,429 2013-05-03
US13/886,429 US9054027B2 (en) 2013-05-03 2013-05-03 III-nitride device and method having a gate isolating structure
PCT/US2014/036788 WO2014179796A1 (en) 2013-05-03 2014-05-05 Iii-nitride transistor layout

Publications (2)

Publication Number Publication Date
CN105229792A CN105229792A (zh) 2016-01-06
CN105229792B true CN105229792B (zh) 2019-10-08

Family

ID=51840998

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201480024829.3A Active CN105229792B (zh) 2013-05-03 2014-05-05 Iii族氮化物晶体管布局

Country Status (4)

Country Link
US (2) US9054027B2 (enExample)
JP (2) JP2016518723A (enExample)
CN (1) CN105229792B (enExample)
WO (1) WO2014179796A1 (enExample)

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* Cited by examiner, † Cited by third party
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JP2015173237A (ja) * 2014-03-12 2015-10-01 株式会社東芝 半導体装置
US9728600B2 (en) * 2015-09-11 2017-08-08 Nxp Usa, Inc. Partially biased isolation in semiconductor devices
US9882041B1 (en) * 2016-11-17 2018-01-30 Texas Instruments Incorporated HEMT having conduction barrier between drain fingertip and source
US10381456B2 (en) 2017-05-04 2019-08-13 Texas Instruments Incorporated Group IIIA-N HEMT with a tunnel diode in the gate stack
US10811514B2 (en) * 2018-03-28 2020-10-20 Semiconductor Components Industries, Llc Electronic device including an enhancement-mode HEMT and a method of using the same
DE102020112069B4 (de) * 2020-02-27 2022-03-03 Taiwan Semiconductor Manufacturing Co. Ltd. Source-leckstromunterdrückung durch source-umgebende gate-struktur und verfahren zur herstellung der gate-struktur
WO2022051173A1 (en) * 2020-09-01 2022-03-10 Power Integrations, Inc. A die seal ring including a two dimensional electron gas region
US11742390B2 (en) 2020-10-30 2023-08-29 Texas Instruments Incorporated Electronic device with gallium nitride transistors and method of making same
US20220139709A1 (en) * 2020-11-05 2022-05-05 International Business Machines Corporation Confined gallium nitride epitaxial layers
CN119789461A (zh) * 2020-12-01 2025-04-08 深圳市晶相技术有限公司 一种功率器件及其应用与制造方法
CN116093165B (zh) * 2023-04-10 2024-07-23 深圳市晶扬电子有限公司 一种紧凑的低电容型肖特基二极管
FR3155362A1 (fr) 2023-11-09 2025-05-16 Commissariat A L'energie Atomique Et Aux Energies Alternatives Dispositif microélectronique à courants de fuite réduits

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CN102171830A (zh) * 2008-07-31 2011-08-31 克里公司 常关型半导体器件及其制造方法
WO2012111393A1 (ja) * 2011-02-15 2012-08-23 シャープ株式会社 半導体装置
US20130087803A1 (en) * 2011-10-06 2013-04-11 Epowersoft, Inc. Monolithically integrated hemt and schottky diode

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JPH11121468A (ja) * 1997-10-08 1999-04-30 Sanyo Electric Co Ltd 半導体装置
US7030428B2 (en) * 2001-12-03 2006-04-18 Cree, Inc. Strain balanced nitride heterojunction transistors
JP2007059595A (ja) * 2005-08-24 2007-03-08 Toshiba Corp 窒化物半導体素子
JP5125512B2 (ja) * 2005-09-30 2013-01-23 日本電気株式会社 電界効果トランジスタ
JP2009522812A (ja) * 2006-01-09 2009-06-11 インターナショナル レクティファイアー コーポレイション 電界緩和機能を有するｉｉｉ族窒化物電力半導体
JP4908886B2 (ja) * 2006-03-23 2012-04-04 日本電信電話株式会社 半導体装置
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JP5526470B2 (ja) * 2007-09-03 2014-06-18 サンケン電気株式会社 窒化物系化合物半導体装置
JP5390983B2 (ja) * 2008-08-08 2014-01-15 古河電気工業株式会社 電界効果トランジスタおよび電界効果トランジスタの製造方法
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CN102171830A (zh) * 2008-07-31 2011-08-31 克里公司 常关型半导体器件及其制造方法
CN102097467A (zh) * 2009-12-10 2011-06-15 三垦电气株式会社 化合物半导体装置及其制造方法
WO2012111393A1 (ja) * 2011-02-15 2012-08-23 シャープ株式会社 半導体装置
US20130087803A1 (en) * 2011-10-06 2013-04-11 Epowersoft, Inc. Monolithically integrated hemt and schottky diode

Also Published As

Publication number Publication date
JP2019117935A (ja) 2019-07-18
CN105229792A (zh) 2016-01-06
US9553151B2 (en) 2017-01-24
WO2014179796A1 (en) 2014-11-06
US20140327011A1 (en) 2014-11-06
US20150270357A1 (en) 2015-09-24
JP2016518723A (ja) 2016-06-23
US9054027B2 (en) 2015-06-09

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