JP2017063172A - 半導体装置 - Google Patents
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 110
- 230000005684 electric field Effects 0.000 claims abstract description 35
- 239000000758 substrate Substances 0.000 claims abstract description 27
- 229910002704 AlGaN Inorganic materials 0.000 claims description 48
- 230000010287 polarization Effects 0.000 claims description 7
- 239000000969 carrier Substances 0.000 claims description 4
- 230000005533 two-dimensional electron gas Effects 0.000 claims description 2
- 230000000903 blocking effect Effects 0.000 abstract description 14
- 230000015556 catabolic process Effects 0.000 abstract description 12
- 230000007423 decrease Effects 0.000 abstract description 5
- 229910002601 GaN Inorganic materials 0.000 description 100
- 230000004048 modification Effects 0.000 description 11
- 238000012986 modification Methods 0.000 description 11
- 238000004088 simulation Methods 0.000 description 7
- 239000013078 crystal Substances 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000009429 electrical wiring Methods 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000004047 hole gas Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
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Abstract
【解決手段】GaN層2の表面近傍の総固定電荷量を0.5×1013〜1.5×1013cm-2の範囲内とする。これにより、半導体装置のオフ時に第2電極5に対して高電界が掛かることで第2電極5の近傍において電界集中が発生することを抑制できる。このため、導電性の基板1の上にGaNデバイスを備えた半導体装置においても阻止電圧の向上、つまり耐圧向上を図ることが可能となる。したがって、2DEGチャネルを用いることで低オン抵抗を実現できることから、阻止電圧の向上とオン抵抗の低下を実現できる半導体装置とすることが可能となる。
【選択図】図1
Description
図1を参照して、本実施形態にかかる半導体装置について説明する。図1に示すように、本実施形態にかかる半導体装置は、GaN横型デバイスを備えた構成とされている。
本発明の第2実施形態について説明する。本実施形態は、第1実施形態に対して総固定電荷量の調整構造を変更したものであり、その他については第1実施形態と同様であるため、第1実施形態と異なる部分についてのみ説明する。
本発明の第3実施形態について説明する。本実施形態は、第1実施形態に示した構造を用いたGaNデバイスの一例を示したものである。
本発明の第4実施形態について説明する。本実施形態は、第3実施形態に対して4端子目の電極を備えたものであり、その他については第3実施形態と同様であるため、第3実施形態と異なる部分についてのみ説明する。
本発明の第5実施形態について説明する。本実施形態は、第4実施形態と同様に4端子目の電極を備えたものであるが、4端子目の電極の構成を第4実施形態と異ならせたものである。その他については第4実施形態と同様であるため、第4実施形態と異なる部分についてのみ説明する。
本発明は上記した実施形態に限定されるものではなく、特許請求の範囲に記載した範囲内において適宜変更が可能である。
2、11 GaN層
3 AlGaN層
4 第1電極
5 第2電極
6 裏面電極
7 第3電極
8 電界緩和層
9 第4電極
10 電荷調整層
Claims (11)
- 導電性の基板(1)と、
前記基板上に形成され、ドリフト領域を構成する第1のGaN系半導体層(2)および前記第1のGaN系半導体層よりもバンドギャップエネルギーが大きい第2のGaN系半導体層(3)を有するヘテロジャンクション構造を少なくとも1つ備えたチャネル形成層と、
前記第2のGaN系半導体層に接して形成され、互いに離されて形成された第1電極(4)および第2電極(5)と、を有し、
前記第1電極と前記第2電極との間の距離(L)が前記第1のGaN系半導体層および前記第2のGaN系半導体層によるヘテロジャンクション構造の厚み(D)よりも長くされ、
前記第1のGaN系半導体層と前記第2のGaN系半導体層との界面における前記第1のGaN系半導体層側に、分極で生成される2次元電子ガスによるキャリアが形成されることで電流を流し、
前記第1のGaN系半導体層の分極による電荷を含めて、前記第1のGaN系半導体層と前記第2のGaN系半導体層に含まれる電荷の総固定電荷量が0.5×1013〜1.5×1013cm-2の範囲内とされている半導体装置。 - 前記第1電極をゲート電極とすると共に前記第2電極をドレイン電極とし、
前記第2のGaN系半導体層に接するように、前記第1電極を挟んで前記第2電極の反対側にソース電極を構成する第3電極(7)を備え、
前記第1電極と前記第2電極および前記第3電極の3端子を有している請求項1に記載の半導体装置。 - 前記第1電極と前記第2電極との間において、前記第2のGaN系半導体層の上に前記第3電極と同電位とされるショットキー電極にて構成される第4電極(9)を備え、
前記第1電極と前記第2電極および前記第3電極の3端子に加えて、前記第4電極を含めた4端子を有している請求項2に記載の半導体装置。 - 前記第1電極と前記第2電極との間において、前記第2のGaN系半導体層の上にGaN系半導体にて構成された電界緩和層(8)が備えられていると共に、該電界緩和層の上に前記第3電極と同電位とされる第4電極(9)が備えられることで、
前記第1電極と前記第2電極および前記第3電極の3端子に加えて、前記第4電極を含めた4端子を有している請求項2に記載の半導体装置。 - 前記電界緩和層がi型のGaN層もしくはp型のGaN層によって構成されている請求項4に記載の半導体装置。
- 前記電界緩和層が前記第4電極のうち最も前記第2電極側の端部よりも前記第2電極側に張り出しており、該張り出しの長さが前記第4電極と前記第2電極との間の距離の半分以下とされている請求項5に記載の半導体装置。
- 前記ゲート電極を含むゲート電極構造は、前記ゲート電極を構成する前記第1電極が前記第2のGaN系半導体層に接するショットキー電極とされたショットキー電極構造である請求項2ないし6のいずれか1つに記載の半導体装置。
- 前記ゲート電極を含むゲート電極構造は、前記第2のGaN系半導体層の上にゲート絶縁膜(12)を介して前記ゲート電極を構成する前記第1電極が備えられたMOS構造である請求項2ないし6のいずれか1つに記載の半導体装置。
- 前記ゲート電極を含むゲート電極構造は、前記第2のGaN系半導体層の上にGaN系半導体にて構成されたゲートGaN層(13)を介して前記ゲート電極を構成する前記第1電極が備えられた構造である請求項2ないし6のいずれか1つに記載の半導体装置。
- 前記第2のGaN系半導体層の上に、前記ドリフト領域における前記総固定電荷量を増加させる電荷調整層(10)が形成されている請求項1ないし9のいずれか1つに記載の半導体装置。
- 前記電荷調整層がn型のAlGaN層もしくはn型のGaN層にて構成されており、nドープによる固定電荷を発生させるものである請求項10に記載の半導体装置。
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US15/753,342 US10714606B2 (en) | 2015-09-22 | 2016-09-05 | Semiconductor device |
CN201680054542.4A CN108028204B (zh) | 2015-09-22 | 2016-09-05 | 半导体装置 |
DE112016004276.0T DE112016004276T5 (de) | 2015-09-22 | 2016-09-05 | Halbleitervorrichtung |
PCT/JP2016/075924 WO2017051688A1 (ja) | 2015-09-22 | 2016-09-05 | 半導体装置 |
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JP6614116B2 (ja) | 2016-05-24 | 2019-12-04 | 株式会社デンソー | 半導体装置 |
CN109728079A (zh) * | 2018-12-04 | 2019-05-07 | 北京大学深圳研究生院 | 一种晶体管及其制作方法 |
TWI724694B (zh) * | 2019-12-18 | 2021-04-11 | 新唐科技股份有限公司 | 氮化鎵高電子遷移率電晶體及其製造方法 |
CN113594248B (zh) * | 2021-08-02 | 2023-04-25 | 电子科技大学 | 一种具有集成续流二极管的双异质结GaN HEMT器件 |
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US20180248026A1 (en) | 2018-08-30 |
CN108028204A (zh) | 2018-05-11 |
DE112016004276T5 (de) | 2018-05-30 |
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