JP2013507004A5 - - Google Patents
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- Publication number
- JP2013507004A5 JP2013507004A5 JP2012532245A JP2012532245A JP2013507004A5 JP 2013507004 A5 JP2013507004 A5 JP 2013507004A5 JP 2012532245 A JP2012532245 A JP 2012532245A JP 2012532245 A JP2012532245 A JP 2012532245A JP 2013507004 A5 JP2013507004 A5 JP 2013507004A5
- Authority
- JP
- Japan
- Prior art keywords
- process gas
- substrate
- processing surface
- gas
- inlet
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 239000007789 gas Substances 0.000 claims description 38
- 238000000034 method Methods 0.000 claims description 37
- 239000000758 substrate Substances 0.000 claims description 27
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 4
- 239000000460 chlorine Substances 0.000 claims description 4
- 230000008021 deposition Effects 0.000 claims description 4
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 claims description 4
- 239000012159 carrier gas Substances 0.000 claims description 3
- 239000002019 doping agent Substances 0.000 claims description 3
- 239000002243 precursor Substances 0.000 claims description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 2
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 claims description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 2
- 229910052786 argon Inorganic materials 0.000 claims description 2
- RBFQJDQYXXHULB-UHFFFAOYSA-N arsane Chemical compound [AsH3] RBFQJDQYXXHULB-UHFFFAOYSA-N 0.000 claims description 2
- 229910052801 chlorine Inorganic materials 0.000 claims description 2
- ZOCHARZZJNPSEU-UHFFFAOYSA-N diboron Chemical compound B#B ZOCHARZZJNPSEU-UHFFFAOYSA-N 0.000 claims description 2
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 claims description 2
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 claims description 2
- 229910000078 germane Inorganic materials 0.000 claims description 2
- 239000001307 helium Substances 0.000 claims description 2
- 229910052734 helium Inorganic materials 0.000 claims description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 2
- 239000001257 hydrogen Substances 0.000 claims description 2
- 229910052739 hydrogen Inorganic materials 0.000 claims description 2
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims description 2
- UIUXUFNYAYAMOE-UHFFFAOYSA-N methylsilane Chemical compound [SiH3]C UIUXUFNYAYAMOE-UHFFFAOYSA-N 0.000 claims description 2
- 229910000077 silane Inorganic materials 0.000 claims description 2
- 238000000151 deposition Methods 0.000 claims 3
- 230000003993 interaction Effects 0.000 claims 1
- 230000000737 periodic effect Effects 0.000 claims 1
- 238000005530 etching Methods 0.000 description 1
- 239000012686 silicon precursor Substances 0.000 description 1
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US24858509P | 2009-10-05 | 2009-10-05 | |
| US61/248,585 | 2009-10-05 | ||
| US12/887,647 US9127360B2 (en) | 2009-10-05 | 2010-09-22 | Epitaxial chamber with cross flow |
| US12/887,647 | 2010-09-22 | ||
| PCT/US2010/050593 WO2011043961A2 (en) | 2009-10-05 | 2010-09-28 | Epitaxial chamber with cross flow |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2013507004A JP2013507004A (ja) | 2013-02-28 |
| JP2013507004A5 true JP2013507004A5 (enExample) | 2013-11-14 |
| JP5908403B2 JP5908403B2 (ja) | 2016-04-26 |
Family
ID=43857339
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2012532245A Active JP5908403B2 (ja) | 2009-10-05 | 2010-09-28 | クロスフローを有するエピタキシャルチャンバ |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US9127360B2 (enExample) |
| JP (1) | JP5908403B2 (enExample) |
| KR (1) | KR101706060B1 (enExample) |
| CN (1) | CN102549718B (enExample) |
| DE (1) | DE112010003931T5 (enExample) |
| TW (1) | TWI512871B (enExample) |
| WO (1) | WO2011043961A2 (enExample) |
Families Citing this family (25)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20120270384A1 (en) * | 2011-04-22 | 2012-10-25 | Applied Materials, Inc. | Apparatus for deposition of materials on a substrate |
| US9682398B2 (en) * | 2012-03-30 | 2017-06-20 | Applied Materials, Inc. | Substrate processing system having susceptorless substrate support with enhanced substrate heating control |
| US20140137801A1 (en) * | 2012-10-26 | 2014-05-22 | Applied Materials, Inc. | Epitaxial chamber with customizable flow injection |
| US9768043B2 (en) | 2013-01-16 | 2017-09-19 | Applied Materials, Inc. | Quartz upper and lower domes |
| KR101819095B1 (ko) * | 2013-03-15 | 2018-01-16 | 어플라이드 머티어리얼스, 인코포레이티드 | Ｅｐｉ 프로세스를 위한 균일성 튜닝 렌즈를 갖는 서셉터 지지 샤프트 |
| US10410890B2 (en) | 2013-06-21 | 2019-09-10 | Applied Materials, Inc. | Light pipe window structure for thermal chamber applications and processes |
| US11414759B2 (en) | 2013-11-29 | 2022-08-16 | Taiwan Semiconductor Manufacturing Co., Ltd | Mechanisms for supplying process gas into wafer process apparatus |
| CN106663606A (zh) * | 2014-06-20 | 2017-05-10 | 应用材料公司 | 用于将气体注入外延腔室的设备 |
| US10760161B2 (en) | 2014-09-05 | 2020-09-01 | Applied Materials, Inc. | Inject insert for EPI chamber |
| KR20170048578A (ko) * | 2014-09-05 | 2017-05-08 | 어플라이드 머티어리얼스, 인코포레이티드 | 분위기 에피택셜 퇴적 챔버 |
| WO2016036497A1 (en) * | 2014-09-05 | 2016-03-10 | Applied Materials, Inc. | Upper dome for epi chamber |
| US11060203B2 (en) * | 2014-09-05 | 2021-07-13 | Applied Materials, Inc. | Liner for epi chamber |
| US10752991B2 (en) * | 2017-02-06 | 2020-08-25 | Applied Materials, Inc. | Half-angle nozzle |
| JP6773880B2 (ja) | 2017-02-23 | 2020-10-21 | 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ | 基板処理装置、半導体装置の製造方法、コンピュータプログラムおよび処理容器 |
| TWI754765B (zh) * | 2017-08-25 | 2022-02-11 | 美商應用材料股份有限公司 | 用於磊晶沉積製程之注入組件 |
| US11149351B2 (en) * | 2017-09-11 | 2021-10-19 | Infineon Technologies Ag | Apparatus and method for chemical vapor deposition process for semiconductor substrates |
| JP6812961B2 (ja) * | 2017-12-25 | 2021-01-13 | 株式会社Sumco | エピタキシャル成長装置およびそれを用いた半導体エピタキシャルウェーハの製造方法 |
| DE102018120580A1 (de) * | 2018-08-23 | 2020-02-27 | Infineon Technologies Ag | Vorrichtung und verfahren zum abscheiden einer schicht bei atmosphärendruck |
| US11486038B2 (en) | 2019-01-30 | 2022-11-01 | Applied Materials, Inc. | Asymmetric injection for better wafer uniformity |
| JP7376693B2 (ja) | 2019-09-09 | 2023-11-08 | アプライド マテリアルズ インコーポレイテッド | 処理システムおよび反応体ガスを供給する方法 |
| CN110670129A (zh) * | 2019-09-27 | 2020-01-10 | 西安奕斯伟硅片技术有限公司 | 一种晶圆外延设备的处理方法和晶圆处理方法 |
| CN110670127B (zh) * | 2019-09-27 | 2021-03-02 | 西安奕斯伟硅片技术有限公司 | 一种晶圆外延设备 |
| US12252806B2 (en) * | 2020-12-31 | 2025-03-18 | Globalwafers Co., Ltd | Systems and methods for a preheat ring in a semiconductor wafer reactor |
| EP4074861A1 (de) * | 2021-04-13 | 2022-10-19 | Siltronic AG | Verfahren zum herstellen von halbleiterscheiben mit aus der gasphase abgeschiedener epitaktischer schicht in einer abscheidekammer |
| US20250357154A1 (en) * | 2024-05-14 | 2025-11-20 | Applied Materials, Inc. | Selective periodic edge deposition and etch |
Family Cites Families (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS54144867A (en) | 1978-05-04 | 1979-11-12 | Hitachi Ltd | Gas phase growth method of semiconductor |
| JPS5881437A (ja) | 1981-11-11 | 1983-05-16 | Hitachi Ltd | 気相成長装置 |
| JP3100702B2 (ja) | 1991-10-28 | 2000-10-23 | 株式会社東芝 | 減圧化学反応方法及びその装置 |
| JPH09115837A (ja) | 1995-10-16 | 1997-05-02 | Hitachi Cable Ltd | 気相成長方法および気相成長装置 |
| JP3517808B2 (ja) | 1996-07-17 | 2004-04-12 | 日本酸素株式会社 | 気相成長方法及び装置 |
| JPH1197361A (ja) | 1997-09-24 | 1999-04-09 | Kokusai Electric Co Ltd | 半導体製造装置 |
| JP3948577B2 (ja) | 1997-09-29 | 2007-07-25 | 信越半導体株式会社 | 半導体単結晶薄膜の製造方法 |
| US6486081B1 (en) * | 1998-11-13 | 2002-11-26 | Applied Materials, Inc. | Gas distribution system for a CVD processing chamber |
| JP2000349030A (ja) | 1999-06-08 | 2000-12-15 | Sumitomo Metal Ind Ltd | 気相反応装置 |
| US6399510B1 (en) * | 2000-09-12 | 2002-06-04 | Applied Materials, Inc. | Bi-directional processing chamber and method for bi-directional processing of semiconductor substrates |
| JP3801957B2 (ja) | 2001-06-29 | 2006-07-26 | 信越半導体株式会社 | 気相成長装置及びエピタキシャルウェーハの製造方法 |
| JP2004119786A (ja) * | 2002-09-27 | 2004-04-15 | Hitachi Kokusai Electric Inc | 基板処理装置及び半導体装置の製造方法 |
| JP4257576B2 (ja) * | 2003-03-25 | 2009-04-22 | ローム株式会社 | 成膜装置 |
| JP2005353665A (ja) * | 2004-06-08 | 2005-12-22 | Komatsu Electronic Metals Co Ltd | 気相成長装置およびエピタキシャル気相成長装置用ガス導入口の仕切り部材の傾斜角度設定方法 |
| KR100854995B1 (ko) * | 2005-03-02 | 2008-08-28 | 삼성전자주식회사 | 고밀도 플라즈마 화학 기상 증착 장치 |
| US7396415B2 (en) * | 2005-06-02 | 2008-07-08 | Asm America, Inc. | Apparatus and methods for isolating chemical vapor reactions at a substrate surface |
| JP2007294545A (ja) * | 2006-04-21 | 2007-11-08 | Sumco Corp | エピタキシャル成長装置 |
| KR101296157B1 (ko) | 2006-09-11 | 2013-08-19 | 주성엔지니어링(주) | 기판 가장자리의 증착을 방지하는 기판처리장치 및 이를이용한 기판처리방법 |
| KR20090051984A (ko) | 2007-11-20 | 2009-05-25 | 세메스 주식회사 | 기판 처리 장치 |
| KR20100114037A (ko) * | 2007-12-20 | 2010-10-22 | 어플라이드 머티어리얼스, 인코포레이티드 | 향상된 가스 유동 분포를 가진 열 반응기 |
| JP2010263112A (ja) * | 2009-05-08 | 2010-11-18 | Sumco Corp | エピタキシャル成長装置及びシリコンエピタキシャルウェーハの製造方法 |
-
2010
- 2010-09-22 US US12/887,647 patent/US9127360B2/en active Active
- 2010-09-28 DE DE112010003931T patent/DE112010003931T5/de active Pending
- 2010-09-28 CN CN201080045712.5A patent/CN102549718B/zh active Active
- 2010-09-28 WO PCT/US2010/050593 patent/WO2011043961A2/en not_active Ceased
- 2010-09-28 KR KR1020127011783A patent/KR101706060B1/ko active Active
- 2010-09-28 JP JP2012532245A patent/JP5908403B2/ja active Active
- 2010-09-30 TW TW099133323A patent/TWI512871B/zh active
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