KR101706060B1 - 교차 유동되는 에피텍셜 챔버 - Google Patents

교차 유동되는 에피텍셜 챔버 Download PDF

Info

Publication number
KR101706060B1
KR101706060B1 KR1020127011783A KR20127011783A KR101706060B1 KR 101706060 B1 KR101706060 B1 KR 101706060B1 KR 1020127011783 A KR1020127011783 A KR 1020127011783A KR 20127011783 A KR20127011783 A KR 20127011783A KR 101706060 B1 KR101706060 B1 KR 101706060B1
Authority
KR
South Korea
Prior art keywords
substrate
process gas
rti
inlet port
processing surface
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020127011783A
Other languages
English (en)
Korean (ko)
Other versions
KR20120095382A (ko
Inventor
바라서브라마니안 라마찬드란
에럴 안토니오 씨. 산체스
니 오. 미요
케빈 조셉 바우티스타
하르프리트 싱 주네자
주오밍 주
Original Assignee
어플라이드 머티어리얼스, 인코포레이티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 어플라이드 머티어리얼스, 인코포레이티드 filed Critical 어플라이드 머티어리얼스, 인코포레이티드
Publication of KR20120095382A publication Critical patent/KR20120095382A/ko
Application granted granted Critical
Publication of KR101706060B1 publication Critical patent/KR101706060B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
KR1020127011783A 2009-10-05 2010-09-28 교차 유동되는 에피텍셜 챔버 Active KR101706060B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US24858509P 2009-10-05 2009-10-05
US61/248,585 2009-10-05
US12/887,647 US9127360B2 (en) 2009-10-05 2010-09-22 Epitaxial chamber with cross flow
US12/887,647 2010-09-22
PCT/US2010/050593 WO2011043961A2 (en) 2009-10-05 2010-09-28 Epitaxial chamber with cross flow

Publications (2)

Publication Number Publication Date
KR20120095382A KR20120095382A (ko) 2012-08-28
KR101706060B1 true KR101706060B1 (ko) 2017-02-27

Family

ID=43857339

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020127011783A Active KR101706060B1 (ko) 2009-10-05 2010-09-28 교차 유동되는 에피텍셜 챔버

Country Status (7)

Country Link
US (1) US9127360B2 (enExample)
JP (1) JP5908403B2 (enExample)
KR (1) KR101706060B1 (enExample)
CN (1) CN102549718B (enExample)
DE (1) DE112010003931T5 (enExample)
TW (1) TWI512871B (enExample)
WO (1) WO2011043961A2 (enExample)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120270384A1 (en) * 2011-04-22 2012-10-25 Applied Materials, Inc. Apparatus for deposition of materials on a substrate
US9682398B2 (en) * 2012-03-30 2017-06-20 Applied Materials, Inc. Substrate processing system having susceptorless substrate support with enhanced substrate heating control
US20140137801A1 (en) * 2012-10-26 2014-05-22 Applied Materials, Inc. Epitaxial chamber with customizable flow injection
US9768043B2 (en) 2013-01-16 2017-09-19 Applied Materials, Inc. Quartz upper and lower domes
KR101819095B1 (ko) * 2013-03-15 2018-01-16 어플라이드 머티어리얼스, 인코포레이티드 Ｅｐｉ 프로세스를 위한 균일성 튜닝 렌즈를 갖는 서셉터 지지 샤프트
US10410890B2 (en) 2013-06-21 2019-09-10 Applied Materials, Inc. Light pipe window structure for thermal chamber applications and processes
US11414759B2 (en) 2013-11-29 2022-08-16 Taiwan Semiconductor Manufacturing Co., Ltd Mechanisms for supplying process gas into wafer process apparatus
CN106663606A (zh) * 2014-06-20 2017-05-10 应用材料公司 用于将气体注入外延腔室的设备
US10760161B2 (en) 2014-09-05 2020-09-01 Applied Materials, Inc. Inject insert for EPI chamber
KR20170048578A (ko) * 2014-09-05 2017-05-08 어플라이드 머티어리얼스, 인코포레이티드 분위기 에피택셜 퇴적 챔버
WO2016036497A1 (en) * 2014-09-05 2016-03-10 Applied Materials, Inc. Upper dome for epi chamber
US11060203B2 (en) * 2014-09-05 2021-07-13 Applied Materials, Inc. Liner for epi chamber
US10752991B2 (en) * 2017-02-06 2020-08-25 Applied Materials, Inc. Half-angle nozzle
JP6773880B2 (ja) 2017-02-23 2020-10-21 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 基板処理装置、半導体装置の製造方法、コンピュータプログラムおよび処理容器
TWI754765B (zh) * 2017-08-25 2022-02-11 美商應用材料股份有限公司 用於磊晶沉積製程之注入組件
US11149351B2 (en) * 2017-09-11 2021-10-19 Infineon Technologies Ag Apparatus and method for chemical vapor deposition process for semiconductor substrates
JP6812961B2 (ja) * 2017-12-25 2021-01-13 株式会社Sumco エピタキシャル成長装置およびそれを用いた半導体エピタキシャルウェーハの製造方法
DE102018120580A1 (de) * 2018-08-23 2020-02-27 Infineon Technologies Ag Vorrichtung und verfahren zum abscheiden einer schicht bei atmosphärendruck
US11486038B2 (en) 2019-01-30 2022-11-01 Applied Materials, Inc. Asymmetric injection for better wafer uniformity
JP7376693B2 (ja) 2019-09-09 2023-11-08 アプライド マテリアルズ インコーポレイテッド 処理システムおよび反応体ガスを供給する方法
CN110670129A (zh) * 2019-09-27 2020-01-10 西安奕斯伟硅片技术有限公司 一种晶圆外延设备的处理方法和晶圆处理方法
CN110670127B (zh) * 2019-09-27 2021-03-02 西安奕斯伟硅片技术有限公司 一种晶圆外延设备
US12252806B2 (en) * 2020-12-31 2025-03-18 Globalwafers Co., Ltd Systems and methods for a preheat ring in a semiconductor wafer reactor
EP4074861A1 (de) * 2021-04-13 2022-10-19 Siltronic AG Verfahren zum herstellen von halbleiterscheiben mit aus der gasphase abgeschiedener epitaktischer schicht in einer abscheidekammer
US20250357154A1 (en) * 2024-05-14 2025-11-20 Applied Materials, Inc. Selective periodic edge deposition and etch

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000349030A (ja) * 1999-06-08 2000-12-15 Sumitomo Metal Ind Ltd 気相反応装置
JP2003086524A (ja) * 2001-06-29 2003-03-20 Shin Etsu Handotai Co Ltd 気相成長装置及びエピタキシャルウェーハの製造方法
JP2004296537A (ja) 2003-03-25 2004-10-21 Rohm Co Ltd 成膜装置
US20090163042A1 (en) * 2007-12-20 2009-06-25 Applied Materials, Inc. Thermal reactor with improved gas flow distribution

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54144867A (en) 1978-05-04 1979-11-12 Hitachi Ltd Gas phase growth method of semiconductor
JPS5881437A (ja) 1981-11-11 1983-05-16 Hitachi Ltd 気相成長装置
JP3100702B2 (ja) 1991-10-28 2000-10-23 株式会社東芝 減圧化学反応方法及びその装置
JPH09115837A (ja) 1995-10-16 1997-05-02 Hitachi Cable Ltd 気相成長方法および気相成長装置
JP3517808B2 (ja) 1996-07-17 2004-04-12 日本酸素株式会社 気相成長方法及び装置
JPH1197361A (ja) 1997-09-24 1999-04-09 Kokusai Electric Co Ltd 半導体製造装置
JP3948577B2 (ja) 1997-09-29 2007-07-25 信越半導体株式会社 半導体単結晶薄膜の製造方法
US6486081B1 (en) * 1998-11-13 2002-11-26 Applied Materials, Inc. Gas distribution system for a CVD processing chamber
US6399510B1 (en) * 2000-09-12 2002-06-04 Applied Materials, Inc. Bi-directional processing chamber and method for bi-directional processing of semiconductor substrates
JP2004119786A (ja) * 2002-09-27 2004-04-15 Hitachi Kokusai Electric Inc 基板処理装置及び半導体装置の製造方法
JP2005353665A (ja) * 2004-06-08 2005-12-22 Komatsu Electronic Metals Co Ltd 気相成長装置およびエピタキシャル気相成長装置用ガス導入口の仕切り部材の傾斜角度設定方法
KR100854995B1 (ko) * 2005-03-02 2008-08-28 삼성전자주식회사 고밀도 플라즈마 화학 기상 증착 장치
US7396415B2 (en) * 2005-06-02 2008-07-08 Asm America, Inc. Apparatus and methods for isolating chemical vapor reactions at a substrate surface
JP2007294545A (ja) * 2006-04-21 2007-11-08 Sumco Corp エピタキシャル成長装置
KR101296157B1 (ko) 2006-09-11 2013-08-19 주성엔지니어링(주) 기판 가장자리의 증착을 방지하는 기판처리장치 및 이를이용한 기판처리방법
KR20090051984A (ko) 2007-11-20 2009-05-25 세메스 주식회사 기판 처리 장치
JP2010263112A (ja) * 2009-05-08 2010-11-18 Sumco Corp エピタキシャル成長装置及びシリコンエピタキシャルウェーハの製造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000349030A (ja) * 1999-06-08 2000-12-15 Sumitomo Metal Ind Ltd 気相反応装置
JP2003086524A (ja) * 2001-06-29 2003-03-20 Shin Etsu Handotai Co Ltd 気相成長装置及びエピタキシャルウェーハの製造方法
JP2004296537A (ja) 2003-03-25 2004-10-21 Rohm Co Ltd 成膜装置
US20090163042A1 (en) * 2007-12-20 2009-06-25 Applied Materials, Inc. Thermal reactor with improved gas flow distribution

Also Published As

Publication number Publication date
US20110174212A1 (en) 2011-07-21
JP5908403B2 (ja) 2016-04-26
CN102549718B (zh) 2016-10-12
KR20120095382A (ko) 2012-08-28
DE112010003931T5 (de) 2012-11-08
CN102549718A (zh) 2012-07-04
JP2013507004A (ja) 2013-02-28
TWI512871B (zh) 2015-12-11
WO2011043961A3 (en) 2011-07-14
US9127360B2 (en) 2015-09-08
TW201126629A (en) 2011-08-01
WO2011043961A2 (en) 2011-04-14

Similar Documents

Publication Publication Date Title
KR101706060B1 (ko) 교차 유동되는 에피텍셜 챔버
CN104756231B (zh) 具有可定制的流动注入的外延腔室
US10731272B2 (en) Methods and apparatus for deposition processes
CN103597580B (zh) 用于将材料沉积在基板上的设备
KR102696320B1 (ko) 반도체 에피택시 성장을 위한 주입기
US8501594B2 (en) Methods for forming silicon germanium layers
KR101371435B1 (ko) 처리유닛을 포함하는 기판 처리 장치
US11075114B2 (en) Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium
JP2013507004A5 (enExample)
CN105164309A (zh) 用于控制外延沉积腔室流量的注入及排放设计
JP7365761B2 (ja) 気相成長装置
CN106711065A (zh) 衬底处理装置及使用所述衬底处理装置的衬底处理方法
US20100120235A1 (en) Methods for forming silicon germanium layers
CN107546101A (zh) 一种外延生长方法
US10607837B2 (en) Gas flow control for EPI thickness uniformity improvement
US20150329969A1 (en) Uniformity and selectivity of low gas flow velocity processes in a cross flow epitaxy chamber with the use of alternative highly reactive precursors though an alternative path
KR20240108261A (ko) 에피택셜 템플릿층을 형성하기 위한 방법, 시스템 및 장치
KR20120079316A (ko) 화학 기상 증착 장치용 서셉터 및 에피택셜 웨이퍼의 제조방법
KR20190026470A (ko) 에피택셜 웨이퍼 및 그 제조 방법

Legal Events

Date Code Title Description
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

A201 Request for examination
PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U12-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 6

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 7

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 8

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 9