TWI512871B - 具交叉流之磊晶腔室 - Google Patents

具交叉流之磊晶腔室 Download PDF

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Publication number
TWI512871B
TWI512871B TW099133323A TW99133323A TWI512871B TW I512871 B TWI512871 B TW I512871B TW 099133323 A TW099133323 A TW 099133323A TW 99133323 A TW99133323 A TW 99133323A TW I512871 B TWI512871 B TW I512871B
Authority
TW
Taiwan
Prior art keywords
substrate
process gas
gas
inlet port
port
Prior art date
Application number
TW099133323A
Other languages
English (en)
Chinese (zh)
Other versions
TW201126629A (en
Inventor
Balasubramanian Ramachandran
Errol Antonio C Sanchez
Nyi O Myo
Kevin Joseph Bautista
Harpreet Singh Juneja
Zuoming Zhu
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of TW201126629A publication Critical patent/TW201126629A/zh
Application granted granted Critical
Publication of TWI512871B publication Critical patent/TWI512871B/zh

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
TW099133323A 2009-10-05 2010-09-30 具交叉流之磊晶腔室 TWI512871B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US24858509P 2009-10-05 2009-10-05
US12/887,647 US9127360B2 (en) 2009-10-05 2010-09-22 Epitaxial chamber with cross flow

Publications (2)

Publication Number Publication Date
TW201126629A TW201126629A (en) 2011-08-01
TWI512871B true TWI512871B (zh) 2015-12-11

Family

ID=43857339

Family Applications (1)

Application Number Title Priority Date Filing Date
TW099133323A TWI512871B (zh) 2009-10-05 2010-09-30 具交叉流之磊晶腔室

Country Status (7)

Country Link
US (1) US9127360B2 (enExample)
JP (1) JP5908403B2 (enExample)
KR (1) KR101706060B1 (enExample)
CN (1) CN102549718B (enExample)
DE (1) DE112010003931T5 (enExample)
TW (1) TWI512871B (enExample)
WO (1) WO2011043961A2 (enExample)

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US20120270384A1 (en) * 2011-04-22 2012-10-25 Applied Materials, Inc. Apparatus for deposition of materials on a substrate
US9682398B2 (en) * 2012-03-30 2017-06-20 Applied Materials, Inc. Substrate processing system having susceptorless substrate support with enhanced substrate heating control
US20140137801A1 (en) * 2012-10-26 2014-05-22 Applied Materials, Inc. Epitaxial chamber with customizable flow injection
US9768043B2 (en) 2013-01-16 2017-09-19 Applied Materials, Inc. Quartz upper and lower domes
KR101819095B1 (ko) * 2013-03-15 2018-01-16 어플라이드 머티어리얼스, 인코포레이티드 Ｅｐｉ 프로세스를 위한 균일성 튜닝 렌즈를 갖는 서셉터 지지 샤프트
US10410890B2 (en) 2013-06-21 2019-09-10 Applied Materials, Inc. Light pipe window structure for thermal chamber applications and processes
US11414759B2 (en) 2013-11-29 2022-08-16 Taiwan Semiconductor Manufacturing Co., Ltd Mechanisms for supplying process gas into wafer process apparatus
CN106663606A (zh) * 2014-06-20 2017-05-10 应用材料公司 用于将气体注入外延腔室的设备
US10760161B2 (en) 2014-09-05 2020-09-01 Applied Materials, Inc. Inject insert for EPI chamber
KR20170048578A (ko) * 2014-09-05 2017-05-08 어플라이드 머티어리얼스, 인코포레이티드 분위기 에피택셜 퇴적 챔버
WO2016036497A1 (en) * 2014-09-05 2016-03-10 Applied Materials, Inc. Upper dome for epi chamber
US11060203B2 (en) * 2014-09-05 2021-07-13 Applied Materials, Inc. Liner for epi chamber
US10752991B2 (en) * 2017-02-06 2020-08-25 Applied Materials, Inc. Half-angle nozzle
JP6773880B2 (ja) 2017-02-23 2020-10-21 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 基板処理装置、半導体装置の製造方法、コンピュータプログラムおよび処理容器
TWI754765B (zh) * 2017-08-25 2022-02-11 美商應用材料股份有限公司 用於磊晶沉積製程之注入組件
US11149351B2 (en) * 2017-09-11 2021-10-19 Infineon Technologies Ag Apparatus and method for chemical vapor deposition process for semiconductor substrates
JP6812961B2 (ja) * 2017-12-25 2021-01-13 株式会社Sumco エピタキシャル成長装置およびそれを用いた半導体エピタキシャルウェーハの製造方法
DE102018120580A1 (de) * 2018-08-23 2020-02-27 Infineon Technologies Ag Vorrichtung und verfahren zum abscheiden einer schicht bei atmosphärendruck
US11486038B2 (en) 2019-01-30 2022-11-01 Applied Materials, Inc. Asymmetric injection for better wafer uniformity
JP7376693B2 (ja) 2019-09-09 2023-11-08 アプライド マテリアルズ インコーポレイテッド 処理システムおよび反応体ガスを供給する方法
CN110670129A (zh) * 2019-09-27 2020-01-10 西安奕斯伟硅片技术有限公司 一种晶圆外延设备的处理方法和晶圆处理方法
CN110670127B (zh) * 2019-09-27 2021-03-02 西安奕斯伟硅片技术有限公司 一种晶圆外延设备
US12252806B2 (en) * 2020-12-31 2025-03-18 Globalwafers Co., Ltd Systems and methods for a preheat ring in a semiconductor wafer reactor
EP4074861A1 (de) * 2021-04-13 2022-10-19 Siltronic AG Verfahren zum herstellen von halbleiterscheiben mit aus der gasphase abgeschiedener epitaktischer schicht in einer abscheidekammer
US20250357154A1 (en) * 2024-05-14 2025-11-20 Applied Materials, Inc. Selective periodic edge deposition and etch

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US20060196420A1 (en) * 2005-03-02 2006-09-07 Andrey Ushakov High density plasma chemical vapor deposition apparatus
US20080248200A1 (en) * 2005-06-02 2008-10-09 Asm America, Inc. Apparatus and methods for isolating chemical vapor reactions at a substrate surface

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US20060196420A1 (en) * 2005-03-02 2006-09-07 Andrey Ushakov High density plasma chemical vapor deposition apparatus
US20080248200A1 (en) * 2005-06-02 2008-10-09 Asm America, Inc. Apparatus and methods for isolating chemical vapor reactions at a substrate surface

Also Published As

Publication number Publication date
US20110174212A1 (en) 2011-07-21
JP5908403B2 (ja) 2016-04-26
CN102549718B (zh) 2016-10-12
KR20120095382A (ko) 2012-08-28
DE112010003931T5 (de) 2012-11-08
CN102549718A (zh) 2012-07-04
JP2013507004A (ja) 2013-02-28
WO2011043961A3 (en) 2011-07-14
US9127360B2 (en) 2015-09-08
TW201126629A (en) 2011-08-01
WO2011043961A2 (en) 2011-04-14
KR101706060B1 (ko) 2017-02-27

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