JP2014533442A - 複数の排気ポートを含む基板処理装置及びその方法 - Google Patents
複数の排気ポートを含む基板処理装置及びその方法 Download PDFInfo
- Publication number
- JP2014533442A JP2014533442A JP2014542245A JP2014542245A JP2014533442A JP 2014533442 A JP2014533442 A JP 2014533442A JP 2014542245 A JP2014542245 A JP 2014542245A JP 2014542245 A JP2014542245 A JP 2014542245A JP 2014533442 A JP2014533442 A JP 2014533442A
- Authority
- JP
- Japan
- Prior art keywords
- exhaust
- substrate
- auxiliary
- line
- auxiliary exhaust
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 177
- 238000000034 method Methods 0.000 title claims abstract description 143
- 238000006243 chemical reaction Methods 0.000 claims abstract description 126
- 239000007789 gas Substances 0.000 claims abstract description 55
- 239000012495 reaction gas Substances 0.000 claims abstract description 41
- 239000006227 byproduct Substances 0.000 claims abstract description 18
- 238000007599 discharging Methods 0.000 claims abstract description 5
- 238000003672 processing method Methods 0.000 claims description 5
- 238000004140 cleaning Methods 0.000 description 32
- 238000000407 epitaxy Methods 0.000 description 13
- 238000000151 deposition Methods 0.000 description 9
- 230000008021 deposition Effects 0.000 description 9
- 229920001296 polysiloxane Polymers 0.000 description 9
- 238000010586 diagram Methods 0.000 description 8
- 238000005530 etching Methods 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 8
- 239000007795 chemical reaction product Substances 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 239000002019 doping agent Substances 0.000 description 4
- 239000011261 inert gas Substances 0.000 description 4
- 239000013067 intermediate product Substances 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 239000002243 precursor Substances 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 2
- 229910003902 SiCl 4 Inorganic materials 0.000 description 2
- RBFQJDQYXXHULB-UHFFFAOYSA-N arsane Chemical compound [AsH3] RBFQJDQYXXHULB-UHFFFAOYSA-N 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 239000012159 carrier gas Substances 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- SLLGVCUQYRMELA-UHFFFAOYSA-N chlorosilicon Chemical compound Cl[Si] SLLGVCUQYRMELA-UHFFFAOYSA-N 0.000 description 2
- 239000000356 contaminant Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 2
- ZOCHARZZJNPSEU-UHFFFAOYSA-N diboron Chemical compound B#B ZOCHARZZJNPSEU-UHFFFAOYSA-N 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 238000005086 pumping Methods 0.000 description 2
- 238000000197 pyrolysis Methods 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- GVGCUCJTUSOZKP-UHFFFAOYSA-N nitrogen trifluoride Chemical compound FN(F)F GVGCUCJTUSOZKP-UHFFFAOYSA-N 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 238000006213 oxygenation reaction Methods 0.000 description 1
- 239000013618 particulate matter Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02587—Structure
- H01L21/0259—Microstructure
- H01L21/02595—Microstructure polycrystalline
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/02—Pretreatment of the material to be coated
- C23C16/0227—Pretreatment of the material to be coated by cleaning or etching
- C23C16/0236—Pretreatment of the material to be coated by cleaning or etching by etching with a reactive gas
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/67757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber vertical transfer of a batch of workpieces
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
- H01L21/02573—Conductivity type
- H01L21/02576—N-type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
- H01L21/02573—Conductivity type
- H01L21/02579—P-type
Abstract
Description
発明が解決しようとする課題
本発明の目的は,積載空間及び排気空間の排気を効果的に処理する基板処理装置及びその方法を提供することにある。
字形状であり,後述する排気ノズルユニット334は排気ポート344を介して第1排気ライン342と連結される。また,補助排気ポート328aは補助排気ライン328bに連結され,下部チャンバ312b内部の積載空間は補助排気ポート328aを介して排気可能である。
Claims (10)
- 基板に対する工程が行われる基板処理装置において,
上部が開放され,一側に前記基板が出入する通路が形成される下部チャンバと,
前記下部チャンバの開放された上部を閉鎖し,前記工程が行われる工程空間を提供する外部反応チューブと,
一つ以上の前記基板が上下方向に積載され,前記基板が積載される積載位置及び前記基板に対する前記工程が行われる工程位置に転換可能な基板ホルダと,
前記外部反応チューブの内壁に沿って配置されて前記反応ガスを吐出する供給口を有する一つ以上の供給ノズルと,
前記外部反応チューブの内壁に沿って配置されて前記工程空間内の未反応ガス及び反応副産物を吸入する排気口を有する一つ以上の排気ノズルと,
前記排気ノズルに連結され,前記排気口を介して吸入した前記未反応ガス及び前記反応副産物を排出する後方排気ラインと,を含み,
前記下部チャンバは,前記排気ノズルと前記後方排気ラインを連結する排気ポート及び前記下部チャンバの内部に形成された積載空間を前記後方排気ラインに連結する補助排気ポートを有することを特徴とする基板処理装置。 - 前記基板ホルダは前記積載位置で前記積載空間内に位置し,前記工程位置で前記工程空間内に位置することを特徴とする請求項1記載の基板処理装置。
- 前記基板処理装置は,前記補助排気ポートに連結された補助排気ライン及び前記補助排気ラインを開閉する第1補助排気バルブを更に含み,
前記第1補助排気バルブは工程を進行する前に前記補助排気ラインを開放して前記積載空間の内部を排気することを特徴とする請求項1記載の基板処理装置。 - 前記基板処理装置は,
前記補助排気ポートに連結された補助排気ライン及び前記補助排気ラインを開閉する第1補助排気バルブと,
前記排気ポートと前記後方排気ラインを連結する前方排気ラインと,
前記前方排気ラインの上に設置されて前記前方排気ラインの内部をポンプするポンプと,
前記前方排気ラインの上に設置されて前記前方排気ラインを開閉するメイン排気バルブと,
前記第1補助排気バルブの後方に設置されて前記補助排気ラインを開閉する第2補助排気バルブと,
前記補助排気ラインと前記前方排気ラインを連結し,一端が前記第1補助排気バルブと第2補助排気バルブとの間に連結されて他端が前記ポンプの前方に連結される連結ラインと,
前記連結ラインの上に設置されて前記連結ラインを開閉する連結バルブと,を更に含み,
工程を進行する前に前記第1補助排気バルブ及び前記連結バルブ,そして前記メイン排気バルブは開放状態であり,前記第2補助排気バルブは閉鎖状態であることを特徴とする請求項1記載の基板処理装置。 - 前記基板処理装置は,
前記補助排気ポートに連結された補助排気ライン及び前記補助排気ラインを開閉する第1補助排気バルブと,
前記排気ポートと前記後方排気ラインを連結する前方排気ラインと,
前記前方排気ラインの上に設置されて前記前方排気ラインの内部をポンプするポンプと,
前記前方排気ラインの上に設置されて前記前方排気ラインを開閉するメイン排気バルブと,
前記第1補助排気バルブの後方に設置されて前記補助排気ラインを開閉する第2補助排気バルブと,
前記補助排気ラインと前記前方排気ラインを連結し,一端が前記第1補助排気バルブと第2補助排気バルブとの間に連結されて他端が前記ポンプの前方に連結される連結ラインと,
前記連結ラインの上に設置されて前記連結ラインを開閉する連結バルブと,を更に含み,
工程を進行する時,前記第1及び第2補助排気バルブ,そして前記メイン排気バルブは開放状態であり,前記連結バルブは閉鎖状態であることを特徴とする請求項1記載の基板処理装置。 - 前記積載空間の圧力は前記工程空間の圧力より高いことを特徴とする請求項1記載の基板処理装置。
- 基板に対する工程が行われる基板処理方法において,
下部チャンバの一側に形成された通路を介して前記下部チャンバの内部に形成された積載空間に位置する基板ホルダの上に前記基板を積載するステップと,
前記積載空間に連結された補助排気ポートを介して前記積載空間を排気するステップと,
前記基板ホルダを前記下部チャンバの開放された上部を閉鎖して前記工程が行われる工程空間を提供する外部反応チューブの内部に移動するステップと,
前記工程空間に連結された供給ノズルを利用して前記工程空間に反応ガスを供給し,前記工程空間に連結された排気ノズル及び前記排気ノズルに連結された排気ポートを利用して前記工程空間を排気するステップと,を含むことを特徴とする基板処理方法。 - 前記下部チャンバは,前記排気ポート及び前記補助排気ポートを有することを特徴とする請求項7記載の基板処理方法。
- 前記方法は,前記工程空間に反応ガスが供給される間に前記補助排気ポートを介して前記積載空間を排気するステップを更に含むことを特徴とする請求項7記載の基板処理方法。
- 前記積載空間の圧力は前記工程空間の圧力より高いことを特徴とする請求項9記載の基板処理方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2011-0120257 | 2011-11-17 | ||
KR1020110120257A KR101308111B1 (ko) | 2011-11-17 | 2011-11-17 | 복수의 배기포트를 포함하는 기판 처리 장치 및 방법 |
PCT/KR2012/009725 WO2013073887A1 (ko) | 2011-11-17 | 2012-11-16 | 복수의 배기포트를 포함하는 기판 처리 장치 및 방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2014533442A true JP2014533442A (ja) | 2014-12-11 |
JP6060172B2 JP6060172B2 (ja) | 2017-01-11 |
Family
ID=48429885
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2014542245A Active JP6060172B2 (ja) | 2011-11-17 | 2012-11-16 | 複数の排気ポートを含む基板処理装置及びその方法 |
Country Status (6)
Country | Link |
---|---|
US (2) | US9875895B2 (ja) |
JP (1) | JP6060172B2 (ja) |
KR (1) | KR101308111B1 (ja) |
CN (1) | CN103946955B (ja) |
TW (1) | TWI489577B (ja) |
WO (1) | WO2013073887A1 (ja) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101408084B1 (ko) * | 2011-11-17 | 2014-07-04 | 주식회사 유진테크 | 보조가스공급포트를 포함하는 기판 처리 장치 |
KR101364701B1 (ko) * | 2011-11-17 | 2014-02-20 | 주식회사 유진테크 | 위상차를 갖는 반응가스를 공급하는 기판 처리 장치 |
KR101463592B1 (ko) * | 2013-07-10 | 2014-11-21 | 주식회사 유진테크 | 기판 처리장치 |
SG11201702331YA (en) | 2014-09-30 | 2017-04-27 | Hitachi Int Electric Inc | Substrate processing device, manufacturing method for semiconductor device, and reaction tube |
KR101682154B1 (ko) | 2015-04-14 | 2016-12-02 | 주식회사 유진테크 | 기판처리장치 |
KR101720620B1 (ko) * | 2015-04-21 | 2017-03-28 | 주식회사 유진테크 | 기판처리장치 및 챔버 세정방법 |
KR101760316B1 (ko) * | 2015-09-11 | 2017-07-21 | 주식회사 유진테크 | 기판처리장치 |
JP6820816B2 (ja) * | 2017-09-26 | 2021-01-27 | 株式会社Kokusai Electric | 基板処理装置、反応管、半導体装置の製造方法、及びプログラム |
KR102212996B1 (ko) * | 2019-01-02 | 2021-02-08 | 피에스케이홀딩스 (주) | 기판 처리 장치 및 기판 처리 방법 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02152224A (ja) * | 1988-12-02 | 1990-06-12 | Toshiba Corp | 気相成長装置 |
JPH10303147A (ja) * | 1997-04-22 | 1998-11-13 | Samsung Electron Co Ltd | 半導体素子製造装置及びその製造方法 |
JP2003017422A (ja) * | 2002-04-01 | 2003-01-17 | Ftl:Kk | 半導体装置の製造方法及び半導体装置の製造装置 |
Family Cites Families (47)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3186262B2 (ja) * | 1992-10-14 | 2001-07-11 | ソニー株式会社 | 半導体装置の製造方法 |
US5888579A (en) * | 1996-07-29 | 1999-03-30 | Texas Instruments-Acer Incorporated | Method and apparatus for preventing particle contamination in a process chamber |
KR19980030954A (ko) * | 1996-10-30 | 1998-07-25 | 김광호 | 반도체 제조장치 중의 로드챔버 |
US6077157A (en) * | 1996-11-18 | 2000-06-20 | Applied Materials, Inc. | Process chamber exhaust system |
KR19980030954U (ko) * | 1996-11-30 | 1998-08-17 | 배순훈 | 승차권 발매기 잼방지 가이드구조 |
US6673673B1 (en) * | 1997-04-22 | 2004-01-06 | Samsung Electronics Co., Ltd. | Method for manufacturing a semiconductor device having hemispherical grains |
US6321680B2 (en) * | 1997-08-11 | 2001-11-27 | Torrex Equipment Corporation | Vertical plasma enhanced process apparatus and method |
US6352594B2 (en) * | 1997-08-11 | 2002-03-05 | Torrex | Method and apparatus for improved chemical vapor deposition processes using tunable temperature controlled gas injectors |
US6204194B1 (en) * | 1998-01-16 | 2001-03-20 | F.T.L. Co., Ltd. | Method and apparatus for producing a semiconductor device |
US6669987B1 (en) * | 1999-04-16 | 2003-12-30 | Unaxis Balzers Aktiengesellschaft | Method for vacuum treatment of workpieces and vacuum treatment facility |
KR100360401B1 (ko) * | 2000-03-17 | 2002-11-13 | 삼성전자 주식회사 | 슬릿형 공정가스 인입부와 다공구조의 폐가스 배출부를포함하는 공정튜브 및 반도체 소자 제조장치 |
JP3989205B2 (ja) * | 2000-08-31 | 2007-10-10 | 松下電器産業株式会社 | Cvd膜の形成方法 |
KR100345304B1 (ko) * | 2000-10-12 | 2002-07-25 | 한국전자통신연구원 | 수직형 초고진공 화학증착장치 |
JP4633269B2 (ja) * | 2001-01-15 | 2011-02-16 | 株式会社日立国際電気 | 基板処理装置及び半導体装置の製造方法 |
KR100431657B1 (ko) | 2001-09-25 | 2004-05-17 | 삼성전자주식회사 | 웨이퍼의 처리 방법 및 처리 장치, 그리고 웨이퍼의 식각방법 및 식각 장치 |
JP3861036B2 (ja) * | 2002-08-09 | 2006-12-20 | 三菱重工業株式会社 | プラズマcvd装置 |
KR100552265B1 (ko) * | 2003-08-02 | 2006-02-20 | 동부아남반도체 주식회사 | 공정 챔버의 진공 시스템 및 진공 설정 방법 |
KR100541814B1 (ko) * | 2003-09-15 | 2006-01-11 | 삼성전자주식회사 | 화학기상증착장치 |
US7408225B2 (en) * | 2003-10-09 | 2008-08-05 | Asm Japan K.K. | Apparatus and method for forming thin film using upstream and downstream exhaust mechanisms |
CN1898411A (zh) * | 2003-12-23 | 2007-01-17 | 约翰·C·舒马赫 | 用于半导体反应器的排气调节系统 |
US7273526B2 (en) * | 2004-04-15 | 2007-09-25 | Asm Japan K.K. | Thin-film deposition apparatus |
US7253107B2 (en) * | 2004-06-17 | 2007-08-07 | Asm International N.V. | Pressure control system |
KR100609065B1 (ko) * | 2004-08-04 | 2006-08-10 | 삼성전자주식회사 | 산화막 형성 장치 및 방법 |
JP2006086186A (ja) * | 2004-09-14 | 2006-03-30 | Hitachi Kokusai Electric Inc | 基板処理装置 |
US20060062913A1 (en) * | 2004-09-17 | 2006-03-23 | Yun-Ren Wang | Process for depositing btbas-based silicon nitride films |
US8148271B2 (en) * | 2005-08-05 | 2012-04-03 | Hitachi Kokusai Electric Inc. | Substrate processing apparatus, coolant gas supply nozzle and semiconductor device manufacturing method |
JP2007067119A (ja) * | 2005-08-30 | 2007-03-15 | Elpida Memory Inc | 半導体製造装置 |
KR100779118B1 (ko) * | 2005-12-09 | 2007-11-27 | 주식회사 테라세미콘 | 평판표시장치 제조시스템 |
JP4878830B2 (ja) * | 2005-12-12 | 2012-02-15 | 株式会社日立国際電気 | 基板処理装置 |
JP5280861B2 (ja) * | 2006-01-19 | 2013-09-04 | エーエスエム アメリカ インコーポレイテッド | 高温aldインレットマニホールド |
US7371998B2 (en) * | 2006-07-05 | 2008-05-13 | Semitool, Inc. | Thermal wafer processor |
US20080072822A1 (en) * | 2006-09-22 | 2008-03-27 | White John M | System and method including a particle trap/filter for recirculating a dilution gas |
US20080072929A1 (en) * | 2006-09-22 | 2008-03-27 | White John M | Dilution gas recirculation |
US20090017637A1 (en) * | 2007-07-10 | 2009-01-15 | Yi-Chiau Huang | Method and apparatus for batch processing in a vertical reactor |
JP2009088308A (ja) * | 2007-10-01 | 2009-04-23 | Hitachi Kokusai Electric Inc | 基板処理装置 |
US8716147B2 (en) * | 2007-11-19 | 2014-05-06 | Hitachi Kokusai Electric Inc. | Manufacturing method of semiconductor device and substrate processing apparatus |
JP2010067686A (ja) * | 2008-09-09 | 2010-03-25 | Hitachi Kokusai Electric Inc | 半導体装置の製造方法 |
KR101003305B1 (ko) * | 2008-10-07 | 2010-12-22 | 국제엘렉트릭코리아 주식회사 | 퍼니스형 반도체 설비 |
US20100183825A1 (en) * | 2008-12-31 | 2010-07-22 | Cambridge Nanotech Inc. | Plasma atomic layer deposition system and method |
JP5658463B2 (ja) * | 2009-02-27 | 2015-01-28 | 株式会社日立国際電気 | 基板処理装置及び半導体装置の製造方法 |
JP5730496B2 (ja) * | 2009-05-01 | 2015-06-10 | 株式会社日立国際電気 | 熱処理装置、半導体デバイスの製造方法および基板処理方法 |
KR101120029B1 (ko) * | 2009-05-29 | 2012-03-23 | 주식회사 테라세미콘 | 배치식 기판 처리 장치 |
JP5520552B2 (ja) * | 2009-09-11 | 2014-06-11 | 株式会社日立国際電気 | 半導体装置の製造方法及び基板処理装置 |
JP5549552B2 (ja) * | 2010-11-12 | 2014-07-16 | 東京エレクトロン株式会社 | 真空処理装置の組み立て方法及び真空処理装置 |
KR101408084B1 (ko) * | 2011-11-17 | 2014-07-04 | 주식회사 유진테크 | 보조가스공급포트를 포함하는 기판 처리 장치 |
KR101371435B1 (ko) * | 2012-01-04 | 2014-03-12 | 주식회사 유진테크 | 처리유닛을 포함하는 기판 처리 장치 |
KR101398949B1 (ko) * | 2013-01-15 | 2014-05-30 | 주식회사 유진테크 | 기판처리장치 |
-
2011
- 2011-11-17 KR KR1020110120257A patent/KR101308111B1/ko active IP Right Grant
-
2012
- 2012-10-25 TW TW101139444A patent/TWI489577B/zh active
- 2012-11-16 JP JP2014542245A patent/JP6060172B2/ja active Active
- 2012-11-16 CN CN201280056561.2A patent/CN103946955B/zh active Active
- 2012-11-16 WO PCT/KR2012/009725 patent/WO2013073887A1/ko active Application Filing
- 2012-11-16 US US14/357,592 patent/US9875895B2/en active Active
-
2017
- 2017-02-07 US US15/426,316 patent/US10593545B2/en active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02152224A (ja) * | 1988-12-02 | 1990-06-12 | Toshiba Corp | 気相成長装置 |
JPH10303147A (ja) * | 1997-04-22 | 1998-11-13 | Samsung Electron Co Ltd | 半導体素子製造装置及びその製造方法 |
JP2003017422A (ja) * | 2002-04-01 | 2003-01-17 | Ftl:Kk | 半導体装置の製造方法及び半導体装置の製造装置 |
Also Published As
Publication number | Publication date |
---|---|
US9875895B2 (en) | 2018-01-23 |
CN103946955A (zh) | 2014-07-23 |
KR20130054707A (ko) | 2013-05-27 |
JP6060172B2 (ja) | 2017-01-11 |
CN103946955B (zh) | 2017-02-22 |
TW201327707A (zh) | 2013-07-01 |
US20170148649A1 (en) | 2017-05-25 |
US20140315375A1 (en) | 2014-10-23 |
KR101308111B1 (ko) | 2013-09-26 |
WO2013073887A1 (ko) | 2013-05-23 |
US10593545B2 (en) | 2020-03-17 |
TWI489577B (zh) | 2015-06-21 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5844919B2 (ja) | 補助ガス供給ポートを含む基板処理装置 | |
JP5919388B2 (ja) | 位相差を有する反応ガスを供給する基板処理装置 | |
JP5848832B2 (ja) | 熱遮断プレートを含む基板処理装置 | |
JP5879447B2 (ja) | 処理ユニットを含む基板処理装置 | |
JP6060172B2 (ja) | 複数の排気ポートを含む基板処理装置及びその方法 | |
JP5844900B2 (ja) | エピタキシャルプロセスのための半導体製造設備 | |
JP5899318B2 (ja) | エピタキシャルプロセスのための半導体製造設備 | |
JP5978301B2 (ja) | エピタキシャルプロセスのための半導体製造設備 | |
JP5844899B2 (ja) | エピタキシャルプロセスのための半導体製造設備 | |
JP6073936B2 (ja) | プロセス空間の高さ別に加熱温度が調節可能なヒータを備える基板処理装置 | |
JP6262769B2 (ja) | 基板処理装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20150514 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20150522 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20150818 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20160309 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20160511 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20160810 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20161028 |
|
RD02 | Notification of acceptance of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7422 Effective date: 20161028 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20161118 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20161212 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6060172 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |