JP5844899B2 - エピタキシャルプロセスのための半導体製造設備 - Google Patents
エピタキシャルプロセスのための半導体製造設備 Download PDFInfo
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- 238000000034 method Methods 0.000 title claims description 65
- 238000004519 manufacturing process Methods 0.000 title claims description 19
- 239000004065 semiconductor Substances 0.000 title claims description 16
- 239000000758 substrate Substances 0.000 claims description 215
- 238000004140 cleaning Methods 0.000 claims description 64
- 230000003028 elevating effect Effects 0.000 claims description 4
- 239000007789 gas Substances 0.000 description 53
- 238000006243 chemical reaction Methods 0.000 description 48
- 239000010408 film Substances 0.000 description 14
- 239000012159 carrier gas Substances 0.000 description 10
- 239000007795 chemical reaction product Substances 0.000 description 10
- 238000000407 epitaxy Methods 0.000 description 10
- 238000005530 etching Methods 0.000 description 10
- 229910052710 silicon Inorganic materials 0.000 description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 238000000151 deposition Methods 0.000 description 8
- 230000008021 deposition Effects 0.000 description 8
- 238000010438 heat treatment Methods 0.000 description 8
- 239000013067 intermediate product Substances 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- 239000006227 byproduct Substances 0.000 description 7
- 238000010586 diagram Methods 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- 229910052814 silicon oxide Inorganic materials 0.000 description 7
- 229910017855 NH 4 F Inorganic materials 0.000 description 6
- 229910004298 SiO 2 Inorganic materials 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- 239000002019 doping agent Substances 0.000 description 4
- 238000000197 pyrolysis Methods 0.000 description 4
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 239000000356 contaminant Substances 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 2
- YZCKVEUIGOORGS-IGMARMGPSA-N Protium Chemical compound [1H] YZCKVEUIGOORGS-IGMARMGPSA-N 0.000 description 2
- 229910003902 SiCl 4 Inorganic materials 0.000 description 2
- RBFQJDQYXXHULB-UHFFFAOYSA-N arsane Chemical compound [AsH3] RBFQJDQYXXHULB-UHFFFAOYSA-N 0.000 description 2
- SLLGVCUQYRMELA-UHFFFAOYSA-N chlorosilicon Chemical compound Cl[Si] SLLGVCUQYRMELA-UHFFFAOYSA-N 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 2
- ZOCHARZZJNPSEU-UHFFFAOYSA-N diboron Chemical compound B#B ZOCHARZZJNPSEU-UHFFFAOYSA-N 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000013618 particulate matter Substances 0.000 description 2
- 239000002243 precursor Substances 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 239000012495 reaction gas Substances 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- GVGCUCJTUSOZKP-UHFFFAOYSA-N nitrogen trifluoride Chemical compound FN(F)F GVGCUCJTUSOZKP-UHFFFAOYSA-N 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 238000006213 oxygenation reaction Methods 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 239000012686 silicon precursor Substances 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67184—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the presence of more than one transfer chamber
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/08—Reaction chambers; Selection of materials therefor
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
- C30B35/005—Transport systems
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02046—Dry cleaning only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
- H01L21/67178—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers vertical arrangement
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/67757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber vertical transfer of a batch of workpieces
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Vapour Deposition (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Drying Of Semiconductors (AREA)
Description
H*+NF3 → NHxFy (1)
NHxFy+SiO2 → (NH4)2SiF6+H2O (2)
(NH4)2SiF6 → NH3+HF+SiF4 (3)
H*+NF3 → NHxFy(NH4FH,NH4FHFなど)
NHxFy+SiO2 → (NH4F)SiF6+H2O↑
(NH4F)6SiF6 → NH31+HF1+SiF4↑
H*+NF3 → NHxFy(NH4FH,NH4FHFなど)
NHxFy+SiO2 → (NH4F)SiF6+H2O↑
(NH4F)6SiF6 → NH3↑+HF↑+SiF4↑
Claims (5)
- 基板に対する洗浄プロセスが行われる洗浄チャンバと,
前記基板上にエピタキシャル層を形成するエピタキシャルプロセスが行われるエピタキシャルチャンバと,
基板ホルダを備え,該基板ホルダが前記基板を積載する積載空間を形成するバッファチャンバと,
前記洗浄チャンバ,前記バッファチャンバ,及び前記エピタキシャルチャンバが側面に連結され,前記洗浄チャンバ,前記バッファチャンバ,及び前記エピタキシャルチャンバ間で前記基板を移送する基板ハンドラを備える移送チャンバと,を含み,
前記積載空間は,前記洗浄プロセスが行われた前記基板が積載される第1積載空間と,前記エピタキシャル層が形成された前記基板が積載される第2積載空間を備え,
前記第1積載空間と第2積載空間は相互に縦方向に配置され,
前記基板ハンドラは,前記洗浄プロセスが行われた前記基板を前記第1積載空間に順次移送して前記第1積載空間に積載された前記基板を前記エピタキシャルチャンバに移送し,前記エピタキシャル層が形成された前記基板を前記第2積載空間に順次に移送することを特徴とする半導体製造設備。 - 前記移送チャンバは前記バッファチャンバに向かって前記基板が出入する移送通路を有し,前記バッファチャンバは前記基板が出入するバッファ通路を有し,
前記半導体製造設備は前記バッファチャンバと前記移送チャンバを隔離するバッファ側のゲート弁を更に含むことを特徴とする請求項1記載の半導体製造設備。 - 前記バッファチャンバは,
前記基板が出入するバッファ通路と,
前記基板ホルダに連結されて前記基板ホルダと共に昇降する昇降軸と,
前記昇降軸を駆動して前記第1及び第2積載空間を前記バッファ通路と対応させるように移動できるエレベータと,を有することを特徴とする請求項1記載の半導体製造設備。 - 前記バッファチャンバは,前記バッファチャンバの内部を排気して前記バッファチャンバの内部を真空状態に維持する排気ラインを備えることを特徴とする請求項1記載の半導体製造設備。
- 前記エピタキシャルプロセスが,複数の基板に対して行われるバッチ型であることを特徴とする請求項1記載の半導体製造設備。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020110077099A KR101271246B1 (ko) | 2011-08-02 | 2011-08-02 | 에피택셜 공정을 위한 반도체 제조설비 |
KR10-2011-0077099 | 2011-08-02 | ||
PCT/KR2012/006103 WO2013019061A2 (ko) | 2011-08-02 | 2012-07-31 | 에피택셜 공정을 위한 반도체 제조설비 |
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JP2014524657A JP2014524657A (ja) | 2014-09-22 |
JP5844899B2 true JP5844899B2 (ja) | 2016-01-20 |
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Application Number | Title | Priority Date | Filing Date |
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JP2014523840A Active JP5844899B2 (ja) | 2011-08-02 | 2012-07-31 | エピタキシャルプロセスのための半導体製造設備 |
Country Status (6)
Country | Link |
---|---|
US (1) | US20140209024A1 (ja) |
JP (1) | JP5844899B2 (ja) |
KR (1) | KR101271246B1 (ja) |
CN (1) | CN103733309B (ja) |
TW (1) | TWI493641B (ja) |
WO (1) | WO2013019061A2 (ja) |
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JP4523661B1 (ja) * | 2009-03-10 | 2010-08-11 | 三井造船株式会社 | 原子層堆積装置及び薄膜形成方法 |
KR101271248B1 (ko) * | 2011-08-02 | 2013-06-07 | 주식회사 유진테크 | 에피택셜 공정을 위한 반도체 제조설비 |
JP2016039355A (ja) * | 2014-08-06 | 2016-03-22 | ピーエスケー・インコーポレーテッド | 基板処理装置及び基板処理方法 |
KR101685095B1 (ko) * | 2015-04-16 | 2016-12-09 | 주식회사 유진테크 | 기판 버퍼링 장치, 기판처리설비, 및 기판처리방법 |
KR101720620B1 (ko) * | 2015-04-21 | 2017-03-28 | 주식회사 유진테크 | 기판처리장치 및 챔버 세정방법 |
KR101760316B1 (ko) * | 2015-09-11 | 2017-07-21 | 주식회사 유진테크 | 기판처리장치 |
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2012
- 2012-07-25 TW TW101126739A patent/TWI493641B/zh active
- 2012-07-31 WO PCT/KR2012/006103 patent/WO2013019061A2/ko active Application Filing
- 2012-07-31 US US14/235,901 patent/US20140209024A1/en not_active Abandoned
- 2012-07-31 JP JP2014523840A patent/JP5844899B2/ja active Active
- 2012-07-31 CN CN201280037955.3A patent/CN103733309B/zh active Active
Also Published As
Publication number | Publication date |
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WO2013019061A3 (ko) | 2013-04-04 |
CN103733309A (zh) | 2014-04-16 |
WO2013019061A2 (ko) | 2013-02-07 |
US20140209024A1 (en) | 2014-07-31 |
CN103733309B (zh) | 2016-05-25 |
KR101271246B1 (ko) | 2013-06-07 |
TW201316429A (zh) | 2013-04-16 |
KR20130015221A (ko) | 2013-02-13 |
JP2014524657A (ja) | 2014-09-22 |
TWI493641B (zh) | 2015-07-21 |
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