JP6060172B2 - 複数の排気ポートを含む基板処理装置及びその方法 - Google Patents
複数の排気ポートを含む基板処理装置及びその方法 Download PDFInfo
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- 239000000758 substrate Substances 0.000 title claims description 180
- 238000000034 method Methods 0.000 title claims description 150
- 238000006243 chemical reaction Methods 0.000 claims description 130
- 239000007789 gas Substances 0.000 claims description 55
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- 239000006227 byproduct Substances 0.000 claims description 20
- 238000007599 discharging Methods 0.000 claims description 6
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- 239000000463 material Substances 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 239000002019 doping agent Substances 0.000 description 4
- 239000011261 inert gas Substances 0.000 description 4
- 239000013067 intermediate product Substances 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 239000002243 precursor Substances 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 2
- 229910003902 SiCl 4 Inorganic materials 0.000 description 2
- RBFQJDQYXXHULB-UHFFFAOYSA-N arsane Chemical compound [AsH3] RBFQJDQYXXHULB-UHFFFAOYSA-N 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 239000012159 carrier gas Substances 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- SLLGVCUQYRMELA-UHFFFAOYSA-N chlorosilicon Chemical compound Cl[Si] SLLGVCUQYRMELA-UHFFFAOYSA-N 0.000 description 2
- 239000000356 contaminant Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 2
- ZOCHARZZJNPSEU-UHFFFAOYSA-N diboron Chemical compound B#B ZOCHARZZJNPSEU-UHFFFAOYSA-N 0.000 description 2
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- 238000005086 pumping Methods 0.000 description 2
- 238000000197 pyrolysis Methods 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
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- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
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- 238000005229 chemical vapour deposition Methods 0.000 description 1
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- 230000000694 effects Effects 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- GVGCUCJTUSOZKP-UHFFFAOYSA-N nitrogen trifluoride Chemical compound FN(F)F GVGCUCJTUSOZKP-UHFFFAOYSA-N 0.000 description 1
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Description
発明が解決しようとする課題
本発明の目的は,積載空間及び排気空間の排気を効果的に処理する基板処理装置及びその方法を提供することにある。
前記基板処理装置は,前記補助排気ポートに連結された補助排気ライン及び前記補助排気ラインを開閉する第1補助バルブと,前記排気ポートと前記第2排気ラインを連結する第1排気ラインと,前記第1排気ラインの上に設置されて前記第1排気ラインの内部をポンプするポンプと,前記第1排気ラインの上に設置されて前記第1排気ラインを開閉する開閉バルブと,前記第1補助バルブの後方に設置されて前記補助排気ラインを開閉する第2補助バルブと,前記補助排気ラインと前記第1排気ラインを連結し,一端が前記第1補助バルブと第2補助バルブとの間に連結されて他端が前記ポンプの前方に連結される連結ラインと,前記連結ラインの上に設置されて前記連結ラインを開閉する連結バルブと,を更に含み,工程を進行する時,前記第1及び第2補助バルブ,そして前記開閉バルブは開放状態であり,前記連結バルブは閉鎖状態でもいい。
前記工程空間を排気するステップは,前記排気ポートに連結された第1排気ライン,前記第1排気ラインに連結されたポンプ及び前記ポンプに連結された第2排気ラインを介して前記工程空間を排気し,前記補助排気ポートと前記第2排気ラインの間に連結した補助排気ライン及び第2排気ラインを介して前記積層空間を排気し,前記補助排気ラインと前記第1排気ラインを連結する連結ラインを閉鎖する。
字形状であり,後述する排気ノズルユニット334は排気ポート344を介して第1排気ライン342と連結される。また,補助排気ポート328aは補助排気ライン328bに連結され,下部チャンバ312b内部の積載空間は補助排気ポート328aを介して排気可能である。
Claims (8)
- 基板に対する工程が行われる基板処理装置において,
上部が開放され,一側に前記基板が出入する通路が形成される下部チャンバと,
前記下部チャンバの開放された上部を閉鎖し,前記工程が行われる工程空間を提供する外部反応チューブと,
一つ以上の前記基板が上下方向に積載され,前記基板が積載される積載位置及び前記基板に対する前記工程が行われる工程位置に転換可能な基板ホルダと,
前記外部反応チューブの内壁に沿って配置されて前記反応ガスを吐出する供給口を有する一つ以上の供給ノズルと,
前記外部反応チューブの内壁に沿って配置されて前記工程空間内の未反応ガス及び反応副産物を吸入する排気口を有する一つ以上の排気ノズルと,
前記排気ノズルに連結され,前記排気口を介して吸入した前記未反応ガス及び前記反応副産物を排出する第2排気ラインと,を含み,
前記下部チャンバは,前記排気ノズルと前記第2排気ラインを連結する排気ポート及び前記下部チャンバの内部に形成された積載空間を前記第2排気ラインに連結する補助排気ポートを有し,
前記基板処理装置は,
前記補助排気ポートに連結された補助排気ライン及び前記補助排気ラインを開閉する第1補助バルブと,
前記排気ポートと前記第2排気ラインを連結する第1排気ラインと,
前記第1排気ラインの上に設置されて前記第1排気ラインの内部をポンプするポンプと,
前記第1排気ラインの上に設置されて前記第1排気ラインを開閉する開閉バルブと,
前記第1補助バルブの後方に設置されて前記補助排気ラインを開閉する第2補助バルブと,
前記補助排気ラインと前記第1排気ラインを連結し,一端が前記第1補助バルブと第2補助バルブとの間に連結されて他端が前記ポンプの前方に連結される連結ラインと,
前記連結ラインの上に設置されて前記連結ラインを開閉する連結バルブと,を更に含み,
工程を進行する前に前記第1補助バルブ及び前記連結バルブ,そして前記開閉バルブは開放状態であり,前記第2補助バルブは閉鎖状態であることを特徴とする
基板処理装置。 - 前記基板ホルダは前記積載位置で前記積載空間内に位置し,前記工程位置で前記工程空間内に位置することを特徴とする請求項1記載の基板処理装置。
- 基板に対する工程が行われる基板処理装置において,
上部が開放され,一側に前記基板が出入する通路が形成される下部チャンバと,
前記下部チャンバの開放された上部を閉鎖し,前記工程が行われる工程空間を提供する外部反応チューブと,
一つ以上の前記基板が上下方向に積載され,前記基板が積載される積載位置及び前記基板に対する前記工程が行われる工程位置に転換可能な基板ホルダと,
前記外部反応チューブの内壁に沿って配置されて前記反応ガスを吐出する供給口を有する一つ以上の供給ノズルと,
前記外部反応チューブの内壁に沿って配置されて前記工程空間内の未反応ガス及び反応副産物を吸入する排気口を有する一つ以上の排気ノズルと,
前記排気ノズルに連結され,前記排気口を介して吸入した前記未反応ガス及び前記反応副産物を排出する第2排気ラインと,を含み,
前記下部チャンバは,前記排気ノズルと前記第2排気ラインを連結する排気ポート及び前記下部チャンバの内部に形成された積載空間を前記第2排気ラインに連結する補助排気ポートを有し,
前記基板処理装置は,
前記補助排気ポートに連結された補助排気ライン及び前記補助排気ラインを開閉する第1補助バルブと,
前記排気ポートと前記第2排気ラインを連結する第1排気ラインと,
前記第1排気ラインの上に設置されて前記第1排気ラインの内部をポンプするポンプと,
前記第1排気ラインの上に設置されて前記第1排気ラインを開閉する開閉バルブと,
前記第1補助バルブの後方に設置されて前記補助排気ラインを開閉する第2補助バルブと,
前記補助排気ラインと前記第1排気ラインを連結し,一端が前記第1補助バルブと第2補助バルブとの間に連結されて他端が前記ポンプの前方に連結される連結ラインと,
前記連結ラインの上に設置されて前記連結ラインを開閉する連結バルブと,を更に含み,
工程を進行する時,前記第1及び第2補助バルブ,そして前記開閉バルブは開放状態であり,前記連結バルブは閉鎖状態であることを特徴とする基板処理装置。 - 前記積載空間の圧力は前記工程空間の圧力より高いことを特徴とする請求項1又は3記載の基板処理装置。
- 基板に対する工程が行われる基板処理方法において,
下部チャンバの一側に形成された通路を介して前記下部チャンバの内部に形成された積載空間に位置する基板ホルダの上に前記基板を積載するステップと,
前記下部チャンバに形成され,前記積載空間に連結された補助排気ポートを介して前記積載空間を排気するステップと,
前記基板ホルダを前記下部チャンバの開放された上部を閉鎖して前記工程が行われる工程空間を提供する外部反応チューブの内部に移動するステップと,
前記工程空間に連結された供給ノズルを利用して前記工程空間に反応ガスを供給し,前記工程空間に連結された排気ノズル及び前記下部チャンバに形成され,前記排気ノズルに連結された排気ポートを利用して前記工程空間を排気するステップと,を含み,
前記工程空間を排気するステップは,
前記排気ポートに連結された第1排気ライン,前記第1排気ラインに連結されたポンプ及び前記ポンプに連結された第2排気ラインを介して前記工程空間を排気し,前記補助排気ポートと前記第2排気ラインの間に連結した補助排気ライン及び第2排気ラインを介して前記積層空間を排気し,
前記補助排気ラインと前記第1排気ラインを連結する連結ラインを閉鎖することを特徴とする基板処理方法。 - 前記積載空間を排気するステップは,
前記補助排気ラインに設置され,前記補助排気ラインを開閉する第1補助バルブを開放し,前記補助排気ラインに前記第1補助バルブと一列に設置され,前記補助排気ラインを開閉する第2補助バルブを閉鎖し,
一端が前記補助排気ラインのうち前記第1補助バルブと前記第2補助バルブの間に連結され,他端が前記第1排気ラインに連結された連結ラインを開放し,前記補助排気ライン,前記連結ライン,前記第1排気ライン,前記ポンプ及び前記第2排気ラインを介して前記積載空間を排気することを特徴とする請求項5記載の基板処理方法。 - 前記積載空間を排気するステップは、
前記補助排気ラインに一列に設置され,前記補助排気ラインを開閉する第1補助バルブ及び第2補助バルブを開放し,
一端が前記補助排気ラインのうち前記第1補助バルブと前記第2補助バルブの間に連結され,他端が前記第1排気ラインに連結された連結ラインを閉鎖し,前記補助排気ライン及び前記第2排気ラインを介して前記積載空間を排気するステップを更に含むことを特徴とする請求項5記載の基板処理方法。 - 前記積載空間の圧力は前記工程空間の圧力より高いことを特徴とする請求項5〜7いずれか1項記載の基板処理方法。
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