JP4878830B2 - 基板処理装置 - Google Patents
基板処理装置 Download PDFInfo
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- JP4878830B2 JP4878830B2 JP2005358031A JP2005358031A JP4878830B2 JP 4878830 B2 JP4878830 B2 JP 4878830B2 JP 2005358031 A JP2005358031 A JP 2005358031A JP 2005358031 A JP2005358031 A JP 2005358031A JP 4878830 B2 JP4878830 B2 JP 4878830B2
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- 239000000758 substrate Substances 0.000 title claims description 43
- 238000010438 heat treatment Methods 0.000 claims description 11
- 238000007599 discharging Methods 0.000 claims description 3
- 239000007789 gas Substances 0.000 description 105
- 235000012431 wafers Nutrition 0.000 description 24
- 238000000034 method Methods 0.000 description 12
- 238000006243 chemical reaction Methods 0.000 description 6
- 239000011295 pitch Substances 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 238000003860 storage Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- LPVJWXJBZPCDLM-HUWNQDJBSA-N 7-boat Chemical compound O([C@H]1\C(C)=C/[C@]23O[C@@]2(C([C@H](C)[C@@H](OC(C)=O)[C@H]2[C@H](C2(C)C)[C@@H]1OC(C)=O)=O)C[C@H]([C@H]3OC(C)=O)C)C(=O)C1=CC=CC=C1 LPVJWXJBZPCDLM-HUWNQDJBSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000003028 elevating effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000006200 vaporizer Substances 0.000 description 1
Images
Description
セット22の授受を行う容器授受手段としてのカセットステージ23が設けられ、該カセットステージ23の後側には昇降手段としてのカセットエレベータ24が設けられ、該カセットエレベータ24にはカセット搬送手段としてのカセット搬送機25が取付けられている。又、前記カセットエレベータ24の後側には、前記カセット22の収納手段としてのカセット棚26が設けられると共に前記カセットステージ23の上方にもカセット収納手段である予備カセット棚27が設けられている。該予備カセット棚27の上方にはファン、防塵フィルタで構成されたクリーンユニット28が設けられ、クリーンエアを前記筐体21の内部、例えば前記カセット22が搬送される領域を流通させる様に構成されている。
される。
3 ヒータ
4 処理室
7 ボート
8 ウェーハ
9 処理ガス供給管
11 ガス供給ノズル
16 排気管
29 処理炉
41 制御部
43 ガス分配器
44 マニホールド
45 分配子
46 接続孔
47 導孔
48 分岐孔
49 ガス分配器
50 マニホールド
51 分配子
53 ガス分配器
54 マニホールド
55 分配子
Claims (1)
- 基板を収納する処理室と、前記基板を加熱する加熱手段と、前記処理室内に処理ガスを供給するガス供給手段と、前記処理室内の雰囲気を排出する排気手段と、制御部とを有し、
前記ガス供給手段はガス供給管と、該ガス供給管から分岐し、それぞれ長さが異なり、異なる位置で処理ガスを供給する複数のガス供給ノズルと、前記分岐する位置に設けられるガス分配器とを少なくとも備え、
前記ガス分配器は、前記ガス供給ノズルが接続されるマニホールドと該マニホールドに移動可能に設けられ、前記ガス供給管に接続された分配子とを有し、該分配子の前記マニホールドに対する位置を変更し、前記ガス供給管と前記ガス供給ノズルとの接続状態を切替える様制御することにより、前記各ノズルから供給される処理ガスの量をそれぞれ所定の値に制御することを特徴とする基板処理装置。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005358031A JP4878830B2 (ja) | 2005-12-12 | 2005-12-12 | 基板処理装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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JP2005358031A JP4878830B2 (ja) | 2005-12-12 | 2005-12-12 | 基板処理装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2007165475A JP2007165475A (ja) | 2007-06-28 |
JP4878830B2 true JP4878830B2 (ja) | 2012-02-15 |
Family
ID=38248067
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2005358031A Active JP4878830B2 (ja) | 2005-12-12 | 2005-12-12 | 基板処理装置 |
Country Status (1)
Country | Link |
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JP (1) | JP4878830B2 (ja) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012119453A (ja) * | 2010-11-30 | 2012-06-21 | Mitsubishi Electric Corp | 不純物拡散装置 |
KR101275496B1 (ko) * | 2011-09-08 | 2013-06-17 | 주식회사 테라세미콘 | 기판 처리 장치 |
KR101364701B1 (ko) * | 2011-11-17 | 2014-02-20 | 주식회사 유진테크 | 위상차를 갖는 반응가스를 공급하는 기판 처리 장치 |
KR101308111B1 (ko) * | 2011-11-17 | 2013-09-26 | 주식회사 유진테크 | 복수의 배기포트를 포함하는 기판 처리 장치 및 방법 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61194838A (ja) * | 1985-02-25 | 1986-08-29 | Hitachi Electronics Eng Co Ltd | Cvd法による薄膜形成方法 |
JPS62291023A (ja) * | 1986-06-10 | 1987-12-17 | Matsushita Electric Ind Co Ltd | 回転式分岐バルブ |
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2005
- 2005-12-12 JP JP2005358031A patent/JP4878830B2/ja active Active
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JP2007165475A (ja) | 2007-06-28 |
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