JPS54144867A - Gas phase growth method of semiconductor - Google Patents

Gas phase growth method of semiconductor

Info

Publication number
JPS54144867A
JPS54144867A JP5270778A JP5270778A JPS54144867A JP S54144867 A JPS54144867 A JP S54144867A JP 5270778 A JP5270778 A JP 5270778A JP 5270778 A JP5270778 A JP 5270778A JP S54144867 A JPS54144867 A JP S54144867A
Authority
JP
Japan
Prior art keywords
concentration
raw material
gas
wafer
material gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5270778A
Other languages
Japanese (ja)
Inventor
Hironori Inoue
Takaya Suzuki
Takashi Aoyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP5270778A priority Critical patent/JPS54144867A/en
Publication of JPS54144867A publication Critical patent/JPS54144867A/en
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45561—Gas plumbing upstream of the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE:To uniform the gas concentration toward the lengthwise the reaction tube, by flowing reaction raw material gas in parallel with the semiconductor wafer placed in the quartz reaction tube, and blowing the raw material gas for concentration correction toward the orthogonal direction of wafer by using a nozzle. CONSTITUTION:In the quartz made reaction tube 43 having the heating high frequency wave work coil 44 at surrounding, the Si wafer 41 horizontally placed on the susceptor 42 being the heat tool is contained, and the reaction raw material gas is fed from the introduction tube 45 and discharged from the feeding discharge tube 46. With the transversal type reaction furnace thus constituted, the nozzle for raw material gas concentration correction is added. That is, on the susceptor 42, the nozzles 47 and 48 are placed toward the wafer 41, and the sample tubes 80 and 81 are placed, which are connected to the concentration analyzer 84 at down stream. Thus, along the gas flow, the control unit 85 detects the concentration at respective position, and the gas amount of correction fed to the nozzles 47 and 48 is controlled with the flow adjusters 65 and 67 to uniform the gas concentration toward lengthwise direction.
JP5270778A 1978-05-04 1978-05-04 Gas phase growth method of semiconductor Pending JPS54144867A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5270778A JPS54144867A (en) 1978-05-04 1978-05-04 Gas phase growth method of semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5270778A JPS54144867A (en) 1978-05-04 1978-05-04 Gas phase growth method of semiconductor

Publications (1)

Publication Number Publication Date
JPS54144867A true JPS54144867A (en) 1979-11-12

Family

ID=12922359

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5270778A Pending JPS54144867A (en) 1978-05-04 1978-05-04 Gas phase growth method of semiconductor

Country Status (1)

Country Link
JP (1) JPS54144867A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57122513A (en) * 1981-01-23 1982-07-30 Hitachi Ltd Method for vapor growth of semiconductor
JPS58111314A (en) * 1981-12-25 1983-07-02 Hitachi Ltd Method and apparatus for controlling gas flow rate
JPS62197849U (en) * 1987-05-20 1987-12-16
EP0279406A2 (en) * 1987-02-16 1988-08-24 Canon Kabushiki Kaisha Device for forming silicon oxide film
US5489446A (en) * 1987-02-16 1996-02-06 Canon Kabushiki Kaisha Device for forming silicon oxide film
USRE36328E (en) * 1988-03-31 1999-10-05 Kabushiki Kaisha Toshiba Semiconductor manufacturing apparatus including temperature control mechanism
JP2013507004A (en) * 2009-10-05 2013-02-28 アプライド マテリアルズ インコーポレイテッド Epitaxial chamber with crossflow

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57122513A (en) * 1981-01-23 1982-07-30 Hitachi Ltd Method for vapor growth of semiconductor
JPS58111314A (en) * 1981-12-25 1983-07-02 Hitachi Ltd Method and apparatus for controlling gas flow rate
JPH0328815B2 (en) * 1981-12-25 1991-04-22 Hitachi Ltd
EP0279406A2 (en) * 1987-02-16 1988-08-24 Canon Kabushiki Kaisha Device for forming silicon oxide film
US5489446A (en) * 1987-02-16 1996-02-06 Canon Kabushiki Kaisha Device for forming silicon oxide film
JPS62197849U (en) * 1987-05-20 1987-12-16
USRE36328E (en) * 1988-03-31 1999-10-05 Kabushiki Kaisha Toshiba Semiconductor manufacturing apparatus including temperature control mechanism
JP2013507004A (en) * 2009-10-05 2013-02-28 アプライド マテリアルズ インコーポレイテッド Epitaxial chamber with crossflow
US9127360B2 (en) 2009-10-05 2015-09-08 Applied Materials, Inc. Epitaxial chamber with cross flow

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