JP2013500575A - 閉じ込め層を製作するための方法および物質ならびにそれによって製作されるデバイス - Google Patents
閉じ込め層を製作するための方法および物質ならびにそれによって製作されるデバイス Download PDFInfo
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Images
Classifications
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- H10K50/00—Organic light-emitting devices
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Abstract
Description
本出願は、35 U.S.C.§119(e)に基づき、2009年7月27日に出願された米国仮特許出願第61/228,689号明細書の優先権を主張するものであり、その全体を本明細書に援用する。
第1表面エネルギーを有する第1層を形成させる工程と;
第1層に下塗(priming)層を施す(treating)工程と;
下塗層をパターン状に放射線に暴露して、暴露領域および非暴露領域を生じさせる工程と;
下塗層を現像して、下塗層を暴露領域または非暴露領域のいずれか一方から効果的に除去して、下塗層のパターンを有する第1層を生じさせる工程であって、下塗層のパターンが第1表面エネルギーより大きい第2表面エネルギーを有する工程と;
第1層上の下塗層のパターン上に第2層を液体付着によって形成させる工程と
を含む、第1層の上に閉じ込め第2層を形成させるための方法が提供される。
第1表面エネルギーを有する第1有機活性層を電極の上に形成させる工程と;
第1有機活性層に下塗層を施す工程と;
下塗層をパターン状に放射線に暴露して、暴露領域および非暴露領域を生じさせる工程と;
下塗層を現像して、下塗層を暴露領域または非暴露領域のいずれか一方から効果的に除去して、下塗層のパターンを有する第1活性有機層を生じさせる工程であって、下塗層のパターンが第1表面エネルギーより大きい第2表面エネルギーを有する工程と;
第1有機活性層上の下塗層のパターン上に液体付着によって第2有機活性層を形成させる工程と
を含む、有機電子デバイスを製作するための方法も提供される。
第1表面エネルギーを有する第1層を形成させる工程と、
第1層に下塗層を施す工程と、
下塗層をパターン状に放射線に暴露して、暴露領域および非暴露領域を生じさせる工程と、
下塗層を現像して、下塗層を暴露領域または非暴露領域のいずれか一方から効果的に除去して、下塗層のパターンを有する第1層を生じさせる工程であって、下塗層のパターンが第1表面エネルギーより大きい第2表面エネルギーを有する工程と、
第1層上の下塗層のパターン上に第2層を形成させる工程と
を含む、閉じ込め第2層を第1層の上に形成させるための方法が提供される。
以下に説明する実施形態の詳細を扱う前に、一部の用語について定義し説明する。
本明細書で示す方法では、第1層が形成され、下塗層が第1層の上に形成され、下塗層がパターン状に放射線に暴露され、下塗層が現像されて暴露領域または非暴露領域のいずれか一方から下塗層が効果的に除去されて、パターン化下塗層をその上に有する第1層が生じる。「効果的に除去する」および「効果的除去」という用語は、暴露領域または非暴露領域のいずれかで下塗層が基本的に完全に除去されることを意味する。下塗層は、他方の領域で部分的に除去されることもありうる。その結果、残りの下塗層のパターンが元の下塗層より薄くなることがある。下塗層のパターンは、第1層の表面エネルギーより大きい表面エネルギーを有する。第2層は、第1層上の下塗層のパターンを覆うように液体を付着させて形成される。
この方法を、電子デバイスへの利用の観点からさらに説明するが、そのような利用に限定されるわけではない。
第1表面エネルギーを有する第1有機活性層を電極の上に形成させる工程と;
第1有機活性層に下塗層を施す工程と;
下塗層をパターン状に放射線に暴露して、暴露領域および非暴露領域を生じさせる工程と;
下塗層を現像して、下塗層を暴露領域または非暴露領域のいずれか一方から除去して、下塗層のパターンを有する第1活性有機層を生じさせる工程であって、下塗層のパターンが第1表面エネルギーより大きい第2表面エネルギーを有する工程と;
第1有機活性層上の下塗層のパターン上に液体付着によって第2有機活性層を形成させる工程と
を含む。
正孔注入層を陽極上に形成させる工程であって、前記正孔注入層がフッ素化物質を含みかつ第1表面エネルギーを有する工程と;
下塗層を正孔注入層上に直接形成させる工程と;
下塗層をパターン状に放射線に暴露して、暴露領域および非暴露領域を生じさせる工程と;
下塗層を現像して、下塗層を暴露領域または非暴露領域のいずれか一方から効果的に除去して、現像下塗層のパターンを正孔注入層上に生じさせる工程であって、前記現像下塗層が第1表面エネルギーより大きい第2表面エネルギーを有する工程と;
下塗層の現像パターン上に正孔輸送層を液体付着によって形成させる工程と
を含む、有機電子デバイスを製作するための方法が提供される。
正孔注入層を陽極の上に形成させる工程であって、前記正孔注入層が導電性ポリマーおよびフッ素化酸ポリマーを含みかつ第1表面エネルギーを有する工程と;
下塗層を正孔注入層上に直接形成させる工程と;
下塗層をパターン状に放射線に暴露して、暴露領域および非暴露領域を生じさせる工程と;
下塗層を現像して、下塗層を非暴露領域から効果的に除去して、現像下塗層のパターンを正孔注入層上に生じさせる工程であって、前記現像下塗層が第1表面エネルギーより大きい第2表面エネルギーを有する工程と;
下塗層の現像パターン上に正孔輸送層を液体付着によって形成させる工程と
を含む、有機電子デバイスを製作するための方法が提供される。
Ar1は、それぞれの出現において同一または異なっていて、フェニレン、置換フェニレン、ナフチレン、および置換ナフチレンよりなる群から選択され;
Ar2は、それぞれの出現において同一または異なっていて、アリール基であり;
Mは、それぞれの出現において同一または異なっていて、共役部分であり;
T1およびT2は、それぞれの出現において独立に同一または異なっていて、共役部分であり;
aは、それぞれの出現において同一または異なっていて、1〜6の整数であり;
b、c、およびdは、b+c+d=1.0となるようなモル分率であるが、但し、cはゼロではなく、bおよびdの少なくとも1つがゼロではないこと、またbがゼロの場合、Mが少なくとも2個のトリアリールアミン単位体を含むことを条件とし;
eは、それぞれの出現において同一または異なっていて、1〜6の整数であり;さらに
nは、1より大きい整数である]
操作はすべて、特に記載のない限り、窒素洗浄されたグローブボックス中で実施した。化合物6(0.652g、0.50ミリモル)をシンチレーションバイアルに加え、16mLのトルエンに溶かした。清浄で乾燥した50mLのシュレンク管に、ビス(1,5−シクロオクタジエン)ニッケル(0)(0.344g、1.252ミリモル)を仕込んだ。2,2’−ジピリジル(0.195g、1.252ミリモル)および1,5−シクロオクタジエン(0.135g、1.252ミリモル)を秤量してシンチレーションバイアルに入れ、3.79gのN,N’−ジメチルホルムアミドに溶かした。その溶液をシュレンク管に加えた。シュレンク管をアルミニウムブロックの中に挿入し、そのブロックを、内部温度が60℃になる設定点において熱板/撹拌機で加熱・攪拌した。触媒系を45分間60℃に保持してから、65℃に上昇させた。モノマーのトルエン溶液をシュレンク管に加え、その管を密閉した。トルエン(8mL)を加えることによって粘度を調節しながら、重合混合物を65℃で1だけ攪拌した。反応混合物を室温まで冷まし、20mLの濃HCLを加えた。その混合物を45分間、攪拌されるままにした。ポリマーを真空濾過で回収し、さらなるメタノールで洗浄し、高真空下で乾燥させた。トルエンからアセトンおよびMeOHへ移す連続沈殿によりポリマーを精製した。白色の繊維状ポリマー(0.437g、79%の収率)が得られた。ポリマーの分子量は、GPC(THF移動相、ポリスチレン標準物質)で求めた:Mw=1,696,019;Mn=873,259。NMR分析により、その構造がポリマーである化合物PM−13であることが確認された。
HIJ−1(これは、導電性ポリマーと高分子フッ素化スルホン酸との水性分散液である)。そのような物質は、例えば、米国特許出願公開第2004/0102577号明細書、米国特許出願公開第2004/0127637号明細書、米国特許出願公開第2005/0205860号明細書、および公開されたPCT出願の国際公開第2009/018009号パンフレットに記載されている。
これらの実施例は、種々の下塗物質および得られた接触角の変化を例示しており、ここでは、下塗層が液体付着で形成され、液体による処理で現像されている。
これらの実施例は、種々の下塗物質および得られた接触角の変化を例示しており、ここでは、下塗層が蒸着で形成され、加熱で現像されている。
この実施例は、電子デバイス内に液体付着で形成された下塗層を例示しており、ここでは、放射層が蒸着によって形成されている。
陽極=インジウムスズ酸化物(ITO):50nm
正孔注入層=HIJ−1(50nm)
下塗り層:実施例13=PM−3(20nm)
比較例A=なし
正孔輸送層=PM−1(20nm)
放射層=6:1(ホスト1:ドーパント1)(32nm)(ここで、ホスト1はジアリールアントラセン化合物であり、ドーパント1はビス(ジアリールアミノ)クリセン化合物である)
電子輸送層=ET1(これは、金属キノレート誘導体である)(10nm)
陰極=CsF/Al(0.7/100nm)
この実施例は、電子デバイス内に液体付着で形成された下塗層を例示しており、ここでは、放射層が液体付着によって形成されている。
陽極=インジウムスズ酸化物(ITO):50nm
正孔注入層=HIJ−2(50nm)
下塗り層:実施例14=PM−3(20nm)
比較例B=なし
正孔輸送層=PM−1(20nm)
放射層=13:1(ホスト1:ドーパント2)(40nm)(ここで、ドーパント2はビス(ジアリールアミノ)クリセン化合物である)
電子輸送層=ET1(10nm)
陰極=CsF/Al(0.7/100nm)
この実施例は、電子デバイス内に蒸着で形成された下塗層を例示しており、ここでは、放射層が蒸着によって形成されている。
陽極=インジウムスズ酸化物(ITO):50nm
正孔注入層=HIJ−1(50nm)
下塗り層:実施例15=PM−11(20nm)
比較例C=なし
正孔輸送層=PM−1(20nm)
放射層=6:1(ホスト1:ドーパント1)(32nm)
電子輸送層=ET1(10nm)
陰極=CsF/Al(0.7/100nm)
この実施例は、電子デバイス内に液体付着で形成された下塗層を例示しており、ここでは、放射層が液体付着によって形成されている。
陽極=ITO:50nm
正孔注入層=HIJ−2(50nm)
下塗り層:実施例16=PM−13(20nm)
比較例D=なし
正孔輸送層=PM−1(20nm)
放射層=13:1(ホスト2:ドーパント2)(40nm)(ここで、ホスト2は重水素化ジアリールアントラセン化合物である)
電子輸送層=ET1(10nm)
陰極=CsF/Al(1/100nm)
Claims (15)
- 第1層の上に閉じ込め第2層を形成させるための方法であって、前記方法が、
第1表面エネルギーを有する前記第1層を形成させる工程と、
前記第1層に下塗層を施す工程と、
前記下塗層をパターン状に放射線に暴露して、暴露領域および非暴露領域を生じさせる工程と、
前記下塗層を現像して、前記下塗層を前記暴露領域または前記非暴露領域のいずれか一方から効果的に除去して、下塗層のパターンを有する第1層を生じさせる工程であって、前記下塗層のパターンが前記第1表面エネルギーより大きい第2表面エネルギーを有する工程と、
前記第1層上の前記下塗層のパターン上に前記第2層を液体付着によって形成させる工程と
を含む、第1層の上に閉じ込め第2層を形成させるための方法。 - 前記非暴露領域を除去する、請求項1に記載の方法。
- 液体による処理によって現像を実施する、請求項1に記載の方法。
- 蒸発によって現像を実施する、請求項1に記載の方法。
- 前記非暴露領域の最も外側の表面を吸収性表面と接触させることによって現像を実施する、請求項1に記載の方法。
- 前記非暴露領域の最も外側の表面を粘着表面と接触させることによって現像を実施する、請求項1に記載の方法。
- 電極を含んでいてその上に第1有機活性層と第2有機活性層とが配置されている有機電子デバイスを製作するための方法であって、前記方法が、
第1表面エネルギーを有する前記第1有機活性層を前記電極の上に形成させる工程と;
前記第1有機活性層に下塗層を施す工程と;
前記下塗層をパターン状に放射線に暴露して、暴露領域および非暴露領域を生じさせる工程と;
前記下塗層を現像して、前記下塗層を前記暴露領域または前記非暴露領域のいずれか一方から実質的に除去して、下塗層のパターンを有する第1活性有機層を生じさせる工程であって、前記下塗層のパターンが前記第1表面エネルギーより大きい第2表面エネルギーを有する工程と;
前記第1有機活性層上の前記下塗層のパターン上に液体付着によって前記第2有機活性層を形成させる工程と
を含む、有機電子デバイスを製作するための方法。 - 前記第1活性層が正孔輸送層であり、前記第2活性層が放射層である、請求項7に記載の方法。
- 前記第1活性層が正孔注入層であり、前記第2活性層が正孔輸送層である、請求項7に記載の方法。
- 前記正孔注入層が導電性ポリマーとフッ素化酸ポリマーとを含む、請求項9に記載の方法。
- 前記正孔注入層が、フッ素化酸ポリマーがドープされた導電性ポリマーと無機ナノ粒子とから本質的になる、請求項9に記載の方法。
- 前記下塗層が正孔輸送物質を含む、請求項9に記載の方法。
- 前記下塗層が、高分子トリアリールアミン類、ポリカルバゾール類、ポリフルオレン類、非平面構成で結合している共役部分を有する高分子トリアリールアミン類、フルオレンとトリアリールアミンとのコポリマー、金属キノレート類、それらの重水素化類似体、およびそれらの組合わせよりなる群から選択される物質を含む、請求項9に記載の方法。
- 前記正孔輸送層が、高分子トリアリールアミン類、非平面構成で結合している共役部分を有する高分子トリアリールアミン類、およびフルオレンとトリアリールアミン類とのコポリマーよりなる群から選択される、請求項9に記載の方法。
- 前記正孔輸送層上に液体付着によって放射層を形成させることをさらに含む、請求項9に記載の方法。
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US20110017980A1 (en) | 2011-01-27 |
EP2459379A1 (en) | 2012-06-06 |
CN102470660A (zh) | 2012-05-23 |
KR101675176B1 (ko) | 2016-11-10 |
TW201104357A (en) | 2011-02-01 |
US9306185B2 (en) | 2016-04-05 |
EP2459379A4 (en) | 2015-05-06 |
CN102470660B (zh) | 2014-11-19 |
US8592239B2 (en) | 2013-11-26 |
KR20120051042A (ko) | 2012-05-21 |
WO2011014216A1 (en) | 2011-02-03 |
JP5727478B2 (ja) | 2015-06-03 |
US20140034941A1 (en) | 2014-02-06 |
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