JP2013211566A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2013211566A5 JP2013211566A5 JP2013098574A JP2013098574A JP2013211566A5 JP 2013211566 A5 JP2013211566 A5 JP 2013211566A5 JP 2013098574 A JP2013098574 A JP 2013098574A JP 2013098574 A JP2013098574 A JP 2013098574A JP 2013211566 A5 JP2013211566 A5 JP 2013211566A5
- Authority
- JP
- Japan
- Prior art keywords
- abrasive grains
- polishing
- mass
- content
- wavelength
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000005498 polishing Methods 0.000 claims 61
- 239000006061 abrasive grain Substances 0.000 claims 52
- 239000007788 liquid Substances 0.000 claims 48
- 229910052751 metal Inorganic materials 0.000 claims 32
- 239000002184 metal Substances 0.000 claims 32
- 239000006185 dispersion Substances 0.000 claims 30
- 239000002002 slurry Substances 0.000 claims 24
- 238000002835 absorbance Methods 0.000 claims 18
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 claims 18
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims 13
- 238000002834 transmittance Methods 0.000 claims 12
- 239000000654 additive Substances 0.000 claims 11
- 239000003513 alkali Substances 0.000 claims 7
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 claims 6
- 150000003839 salts Chemical class 0.000 claims 6
- 230000000996 additive effect Effects 0.000 claims 5
- 238000000034 method Methods 0.000 claims 5
- 239000000758 substrate Substances 0.000 claims 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims 4
- 229910052684 Cerium Inorganic materials 0.000 claims 4
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 claims 4
- 229920002451 polyvinyl alcohol Polymers 0.000 claims 4
- 239000011163 secondary particle Substances 0.000 claims 4
- 229910021529 ammonia Inorganic materials 0.000 claims 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 1
- 239000000470 constituent Substances 0.000 claims 1
- 239000012530 fluid Substances 0.000 claims 1
- 229910052814 silicon oxide Inorganic materials 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013098574A JP5831495B2 (ja) | 2010-11-22 | 2013-05-08 | スラリー及びその製造方法、研磨液セット、研磨液及びその製造方法、並びに、基板の研磨方法 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2010260036 | 2010-11-22 | ||
| JP2010260036 | 2010-11-22 | ||
| JP2013098574A JP5831495B2 (ja) | 2010-11-22 | 2013-05-08 | スラリー及びその製造方法、研磨液セット、研磨液及びその製造方法、並びに、基板の研磨方法 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2012545748A Division JP5590144B2 (ja) | 2010-11-22 | 2011-11-21 | スラリー、研磨液セット、研磨液、及び、基板の研磨方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2013211566A JP2013211566A (ja) | 2013-10-10 |
| JP2013211566A5 true JP2013211566A5 (cg-RX-API-DMAC7.html) | 2015-05-21 |
| JP5831495B2 JP5831495B2 (ja) | 2015-12-09 |
Family
ID=46145883
Family Applications (4)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2012545748A Active JP5590144B2 (ja) | 2010-11-22 | 2011-11-21 | スラリー、研磨液セット、研磨液、及び、基板の研磨方法 |
| JP2013098574A Active JP5831495B2 (ja) | 2010-11-22 | 2013-05-08 | スラリー及びその製造方法、研磨液セット、研磨液及びその製造方法、並びに、基板の研磨方法 |
| JP2013098578A Withdrawn JP2013211567A (ja) | 2010-11-22 | 2013-05-08 | スラリー、研磨液セット、研磨液、基板の研磨方法及び基板 |
| JP2013098580A Withdrawn JP2013211568A (ja) | 2010-11-22 | 2013-05-08 | スラリー、研磨液セット、研磨液、基板の研磨方法及び基板 |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2012545748A Active JP5590144B2 (ja) | 2010-11-22 | 2011-11-21 | スラリー、研磨液セット、研磨液、及び、基板の研磨方法 |
Family Applications After (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2013098578A Withdrawn JP2013211567A (ja) | 2010-11-22 | 2013-05-08 | スラリー、研磨液セット、研磨液、基板の研磨方法及び基板 |
| JP2013098580A Withdrawn JP2013211568A (ja) | 2010-11-22 | 2013-05-08 | スラリー、研磨液セット、研磨液、基板の研磨方法及び基板 |
Country Status (7)
| Country | Link |
|---|---|
| US (5) | US9988573B2 (cg-RX-API-DMAC7.html) |
| JP (4) | JP5590144B2 (cg-RX-API-DMAC7.html) |
| KR (4) | KR20130129396A (cg-RX-API-DMAC7.html) |
| CN (4) | CN103497732B (cg-RX-API-DMAC7.html) |
| SG (1) | SG190054A1 (cg-RX-API-DMAC7.html) |
| TW (4) | TWI434919B (cg-RX-API-DMAC7.html) |
| WO (1) | WO2012070541A1 (cg-RX-API-DMAC7.html) |
Families Citing this family (28)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5582187B2 (ja) | 2010-03-12 | 2014-09-03 | 日立化成株式会社 | スラリ、研磨液セット、研磨液及びこれらを用いた基板の研磨方法 |
| CN103409108B (zh) | 2010-11-22 | 2015-04-22 | 日立化成株式会社 | 悬浮液、研磨液套剂、研磨液、基板的研磨方法及基板 |
| CN103497732B (zh) | 2010-11-22 | 2016-08-10 | 日立化成株式会社 | 悬浮液、研磨液套剂、研磨液、基板的研磨方法及基板 |
| KR102004570B1 (ko) | 2012-02-21 | 2019-07-26 | 히타치가세이가부시끼가이샤 | 연마제, 연마제 세트 및 기체의 연마 방법 |
| SG10201606827RA (en) | 2012-02-21 | 2016-10-28 | Hitachi Chemical Co Ltd | Polishing agent, polishing agent set, and substrate polishing method |
| US20150129796A1 (en) * | 2012-05-22 | 2015-05-14 | Hitachi Chemical Company, Ltd. | Abrasive grains, slurry, polishing solution, and manufacturing methods therefor |
| JP5943072B2 (ja) | 2012-05-22 | 2016-06-29 | 日立化成株式会社 | スラリー、研磨液セット、研磨液及び基体の研磨方法 |
| SG11201407029XA (en) | 2012-05-22 | 2014-12-30 | Hitachi Chemical Co Ltd | Slurry, polishing-solution set, polishing solution, substrate polishing method, and substrate |
| JP5943074B2 (ja) | 2012-05-22 | 2016-06-29 | 日立化成株式会社 | スラリー、研磨液セット、研磨液及び基体の研磨方法 |
| KR20150014956A (ko) * | 2012-05-22 | 2015-02-09 | 히타치가세이가부시끼가이샤 | 지립, 슬러리, 연마액 및 그의 제조 방법 |
| WO2013175857A1 (ja) * | 2012-05-22 | 2013-11-28 | 日立化成株式会社 | スラリー、研磨液セット、研磨液、基体の研磨方法及び基体 |
| US9163162B2 (en) | 2012-08-30 | 2015-10-20 | Hitachi Chemical Company, Ltd. | Polishing agent, polishing agent set and method for polishing base |
| US10155886B2 (en) | 2013-06-12 | 2018-12-18 | Hitachi Chemical Company, Ltd. | Polishing liquid for CMP, and polishing method |
| WO2015030009A1 (ja) * | 2013-08-30 | 2015-03-05 | 日立化成株式会社 | スラリー、研磨液セット、研磨液、基体の研磨方法及び基体 |
| KR20160054466A (ko) | 2013-09-10 | 2016-05-16 | 히타치가세이가부시끼가이샤 | 슬러리, 연마액 세트, 연마액, 기체의 연마 방법 및 기체 |
| US10030172B2 (en) | 2013-12-26 | 2018-07-24 | Hitachi Chemical Company, Ltd. | Abrasive, abrasive set, and method for polishing substrate |
| KR102628333B1 (ko) * | 2015-09-09 | 2024-01-22 | 가부시끼가이샤 레조낙 | 연마액, 연마액 세트 및 기체의 연마 방법 |
| WO2018179061A1 (ja) | 2017-03-27 | 2018-10-04 | 日立化成株式会社 | 研磨液、研磨液セット及び研磨方法 |
| US11566150B2 (en) | 2017-03-27 | 2023-01-31 | Showa Denko Materials Co., Ltd. | Slurry and polishing method |
| WO2019043819A1 (ja) | 2017-08-30 | 2019-03-07 | 日立化成株式会社 | スラリ及び研磨方法 |
| WO2019181016A1 (ja) | 2018-03-22 | 2019-09-26 | 日立化成株式会社 | 研磨液、研磨液セット及び研磨方法 |
| WO2020021680A1 (ja) * | 2018-07-26 | 2020-01-30 | 日立化成株式会社 | スラリ及び研磨方法 |
| US12247140B2 (en) | 2018-09-25 | 2025-03-11 | Resonac Corporation | Slurry and polishing method |
| CN116710531A (zh) * | 2020-08-31 | 2023-09-05 | 秀博瑞殷株式公社 | 氧化铈粒子、包含其的化学机械研磨用浆料组合物以及半导体器件的制造方法 |
| WO2022102020A1 (ja) | 2020-11-11 | 2022-05-19 | 昭和電工マテリアルズ株式会社 | 研磨液及び研磨方法 |
| KR102783394B1 (ko) | 2020-11-11 | 2025-03-17 | 가부시끼가이샤 레조낙 | 연마액 및 연마 방법 |
| CN112680111B (zh) * | 2020-12-24 | 2022-07-08 | 安徽中飞科技有限公司 | 一种玻璃用抛光液及其应用 |
| KR102620964B1 (ko) | 2021-07-08 | 2024-01-03 | 에스케이엔펄스 주식회사 | 반도체 공정용 연마 조성물 및 이를 이용한 연마된 물품의 제조방법 |
Family Cites Families (58)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3123452A (en) | 1964-03-03 | Glass polish and process of polishing | ||
| US3097083A (en) | 1959-07-02 | 1963-07-09 | American Potash & Chem Corp | Polishing composition and process of forming same |
| BR9104844A (pt) | 1991-11-06 | 1993-05-11 | Solvay | Processo para a extracao seletiva de cerio de uma solucao aquosa de elementos de terras raras |
| FR2684662B1 (fr) | 1991-12-09 | 1994-05-06 | Rhone Poulenc Chimie | Composition a base d'oxyde cerique, preparation et utilisation. |
| FR2714370B1 (fr) | 1993-12-24 | 1996-03-08 | Rhone Poulenc Chimie | Précurseur d'une composition et composition à base d'un oxyde mixte de cérium et de zirconium, procédé de préparation et utilisation. |
| JP3278532B2 (ja) | 1994-07-08 | 2002-04-30 | 株式会社東芝 | 半導体装置の製造方法 |
| AU1670597A (en) * | 1996-02-07 | 1997-08-28 | Hitachi Chemical Company, Ltd. | Cerium oxide abrasive, semiconductor chip, semiconductor device, process for the production of them, and method for the polishing of substrates |
| JPH09270402A (ja) | 1996-03-29 | 1997-10-14 | Hitachi Chem Co Ltd | 酸化セリウム研磨剤及び基板の製造法 |
| JPH10154672A (ja) | 1996-09-30 | 1998-06-09 | Hitachi Chem Co Ltd | 酸化セリウム研磨剤及び基板の研磨法 |
| CN1323124C (zh) * | 1996-09-30 | 2007-06-27 | 日立化成工业株式会社 | 氧化铈研磨剂以及基板的研磨方法 |
| US5759917A (en) | 1996-12-30 | 1998-06-02 | Cabot Corporation | Composition for oxide CMP |
| JPH10106994A (ja) | 1997-01-28 | 1998-04-24 | Hitachi Chem Co Ltd | 酸化セリウム研磨剤及び基板の研磨法 |
| AU6116098A (en) | 1997-03-03 | 1998-09-22 | Nissan Chemical Industries Ltd. | Process for producing composite sols, coating composition, and optical member |
| JP3992402B2 (ja) | 1999-05-25 | 2007-10-17 | 株式会社コーセー | 金属酸化物固溶酸化セリウムからなる紫外線遮断剤並びにそれを配合した樹脂組成物及び化粧料 |
| US6440856B1 (en) | 1999-09-14 | 2002-08-27 | Jsr Corporation | Cleaning agent for semiconductor parts and method for cleaning semiconductor parts |
| JP2002241739A (ja) | 2001-02-20 | 2002-08-28 | Hitachi Chem Co Ltd | 研磨剤及び基板の研磨方法 |
| WO2002067309A1 (en) * | 2001-02-20 | 2002-08-29 | Hitachi Chemical Co., Ltd. | Polishing compound and method for polishing substrate |
| JP4231632B2 (ja) | 2001-04-27 | 2009-03-04 | 花王株式会社 | 研磨液組成物 |
| JPWO2003038883A1 (ja) | 2001-10-31 | 2005-02-24 | 日立化成工業株式会社 | 研磨液及び研磨方法 |
| JP3782771B2 (ja) | 2002-11-06 | 2006-06-07 | ユシロ化学工業株式会社 | 研磨用砥粒及び研磨剤の製造方法 |
| US7300601B2 (en) * | 2002-12-10 | 2007-11-27 | Advanced Technology Materials, Inc. | Passivative chemical mechanical polishing composition for copper film planarization |
| CN1748292B (zh) | 2002-12-31 | 2010-09-01 | 三菱住友硅晶株式会社 | 化学机械研磨用浆料组合物、利用它的半导体元件的表面平坦化方法以及浆料组合物的选择比控制方法 |
| US8075800B2 (en) * | 2003-05-28 | 2011-12-13 | Hitachi Chemical Co., Ltd. | Polishing slurry and polishing method |
| US20050028450A1 (en) * | 2003-08-07 | 2005-02-10 | Wen-Qing Xu | CMP slurry |
| WO2005026051A1 (ja) | 2003-09-12 | 2005-03-24 | Hitachi Chemical Co., Ltd. | セリウム塩、その製造方法、酸化セリウム及びセリウム系研磨剤 |
| KR100555432B1 (ko) * | 2003-09-23 | 2006-02-24 | 삼성코닝 주식회사 | 반도체 박막 연마용 산화세륨 수성 슬러리 및 이의 제조방법 |
| JP5013671B2 (ja) | 2004-12-28 | 2012-08-29 | 日揮触媒化成株式会社 | 金属酸化物ゾルの製造方法および金属酸化物ゾル |
| JP2006249129A (ja) | 2005-03-08 | 2006-09-21 | Hitachi Chem Co Ltd | 研磨剤の製造方法及び研磨剤 |
| US20060278614A1 (en) * | 2005-06-08 | 2006-12-14 | Cabot Microelectronics Corporation | Polishing composition and method for defect improvement by reduced particle stiction on copper surface |
| US7803203B2 (en) | 2005-09-26 | 2010-09-28 | Cabot Microelectronics Corporation | Compositions and methods for CMP of semiconductor materials |
| KR20070041330A (ko) | 2005-10-14 | 2007-04-18 | 가오가부시끼가이샤 | 반도체 기판용 연마액 조성물 |
| JP4243307B2 (ja) | 2006-04-14 | 2009-03-25 | 昭和電工株式会社 | ガラス基板の加工方法及びガラス基板加工用リンス剤組成物 |
| SG136886A1 (en) | 2006-04-28 | 2007-11-29 | Asahi Glass Co Ltd | Method for producing glass substrate for magnetic disk, and magnetic disk |
| FR2906800B1 (fr) | 2006-10-09 | 2008-11-28 | Rhodia Recherches & Tech | Suspension liquide et poudre de particules d'oxyde de cerium, procedes de preparation de celles-ci et utilisation dans le polissage |
| US8821750B2 (en) | 2007-02-27 | 2014-09-02 | Hitachi Chemical Co., Ltd. | Metal polishing slurry and polishing method |
| JP5281758B2 (ja) | 2007-05-24 | 2013-09-04 | ユシロ化学工業株式会社 | 研磨用組成物 |
| JP4294710B2 (ja) * | 2007-09-13 | 2009-07-15 | 三井金属鉱業株式会社 | 酸化セリウム及びその製造方法 |
| JP5444625B2 (ja) | 2008-03-05 | 2014-03-19 | 日立化成株式会社 | Ｃｍｐ研磨液、基板の研磨方法及び電子部品 |
| TWI673355B (zh) * | 2008-04-23 | 2019-10-01 | 日商日立化成工業股份有限公司 | 研磨劑以及使用該研磨劑的基板研磨方法 |
| JP5287174B2 (ja) * | 2008-04-30 | 2013-09-11 | 日立化成株式会社 | 研磨剤及び研磨方法 |
| US8383003B2 (en) | 2008-06-20 | 2013-02-26 | Nexplanar Corporation | Polishing systems |
| JP5403957B2 (ja) | 2008-07-01 | 2014-01-29 | 花王株式会社 | 研磨液組成物 |
| US20100107509A1 (en) | 2008-11-04 | 2010-05-06 | Guiselin Olivier L | Coated abrasive article for polishing or lapping applications and system and method for producing the same. |
| JP5499556B2 (ja) * | 2008-11-11 | 2014-05-21 | 日立化成株式会社 | スラリ及び研磨液セット並びにこれらから得られるｃｍｐ研磨液を用いた基板の研磨方法及び基板 |
| JP2010153782A (ja) | 2008-11-20 | 2010-07-08 | Hitachi Chem Co Ltd | 基板の研磨方法 |
| JP2010153781A (ja) * | 2008-11-20 | 2010-07-08 | Hitachi Chem Co Ltd | 基板の研磨方法 |
| CN102232242B (zh) | 2008-12-11 | 2014-07-09 | 日立化成株式会社 | Cmp用研磨液以及使用该研磨液的研磨方法 |
| JP5355099B2 (ja) * | 2009-01-08 | 2013-11-27 | ニッタ・ハース株式会社 | 研磨組成物 |
| WO2011048889A1 (ja) | 2009-10-22 | 2011-04-28 | 日立化成工業株式会社 | 研磨剤、濃縮１液式研磨剤、２液式研磨剤及び基板の研磨方法 |
| JP2011142284A (ja) * | 2009-12-10 | 2011-07-21 | Hitachi Chem Co Ltd | Ｃｍｐ研磨液、基板の研磨方法及び電子部品 |
| JP5582187B2 (ja) | 2010-03-12 | 2014-09-03 | 日立化成株式会社 | スラリ、研磨液セット、研磨液及びこれらを用いた基板の研磨方法 |
| JP5648567B2 (ja) | 2010-05-07 | 2015-01-07 | 日立化成株式会社 | Ｃｍｐ用研磨液及びこれを用いた研磨方法 |
| CN103497732B (zh) | 2010-11-22 | 2016-08-10 | 日立化成株式会社 | 悬浮液、研磨液套剂、研磨液、基板的研磨方法及基板 |
| CN103409108B (zh) | 2010-11-22 | 2015-04-22 | 日立化成株式会社 | 悬浮液、研磨液套剂、研磨液、基板的研磨方法及基板 |
| CN102408836A (zh) | 2011-10-20 | 2012-04-11 | 天津理工大学 | 一种用于氧化钛薄膜化学机械平坦化的纳米抛光液及应用 |
| SG11201407029XA (en) * | 2012-05-22 | 2014-12-30 | Hitachi Chemical Co Ltd | Slurry, polishing-solution set, polishing solution, substrate polishing method, and substrate |
| WO2013175857A1 (ja) * | 2012-05-22 | 2013-11-28 | 日立化成株式会社 | スラリー、研磨液セット、研磨液、基体の研磨方法及び基体 |
| WO2015030009A1 (ja) * | 2013-08-30 | 2015-03-05 | 日立化成株式会社 | スラリー、研磨液セット、研磨液、基体の研磨方法及び基体 |
-
2011
- 2011-11-21 CN CN201310335499.7A patent/CN103497732B/zh active Active
- 2011-11-21 CN CN201310335723.2A patent/CN103497733B/zh active Active
- 2011-11-21 CN CN201310335599.XA patent/CN103500706A/zh active Pending
- 2011-11-21 KR KR1020137017129A patent/KR20130129396A/ko not_active Withdrawn
- 2011-11-21 WO PCT/JP2011/076822 patent/WO2012070541A1/ja not_active Ceased
- 2011-11-21 SG SG2013032834A patent/SG190054A1/en unknown
- 2011-11-21 KR KR1020137017128A patent/KR101886895B1/ko active Active
- 2011-11-21 US US13/582,969 patent/US9988573B2/en active Active
- 2011-11-21 KR KR1020137017130A patent/KR20130129397A/ko not_active Withdrawn
- 2011-11-21 JP JP2012545748A patent/JP5590144B2/ja active Active
- 2011-11-21 CN CN201180055796.5A patent/CN103222035B/zh active Active
- 2011-11-21 KR KR1020137012271A patent/KR101476943B1/ko active Active
- 2011-11-22 TW TW100142634A patent/TWI434919B/zh active
- 2011-11-22 TW TW102107717A patent/TW201323592A/zh unknown
- 2011-11-22 TW TW102107719A patent/TWI510606B/zh active
- 2011-11-22 TW TW102107716A patent/TW201323591A/zh unknown
-
2013
- 2013-01-31 US US13/755,075 patent/US20130143404A1/en not_active Abandoned
- 2013-01-31 US US13/754,958 patent/US20130130501A1/en not_active Abandoned
- 2013-01-31 US US13/755,127 patent/US20130244431A1/en not_active Abandoned
- 2013-05-08 JP JP2013098574A patent/JP5831495B2/ja active Active
- 2013-05-08 JP JP2013098578A patent/JP2013211567A/ja not_active Withdrawn
- 2013-05-08 JP JP2013098580A patent/JP2013211568A/ja not_active Withdrawn
-
2018
- 2018-05-04 US US15/970,953 patent/US20180251680A1/en not_active Abandoned
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2013211566A5 (cg-RX-API-DMAC7.html) | ||
| TW201612293A (en) | Polishing agent and method for polishing substrate using the same | |
| JP2018513229A5 (cg-RX-API-DMAC7.html) | ||
| TW201229221A (en) | Manufacturing method of abrasive grain, manufacturing method of slurry, and manufacturing method of polishing fluid | |
| CN106133107B (zh) | 研磨用组合物及研磨方法 | |
| JP2009010402A5 (cg-RX-API-DMAC7.html) | ||
| CN107922786B (zh) | 浆料组合物和使用方法 | |
| MY170361A (en) | Sapphire polishing slurry and sapphire polishing method | |
| TW201323592A (zh) | 漿料、硏磨液組、硏磨液、基板的硏磨方法及基板 | |
| KR20190122224A (ko) | 연마액, 연마액 세트 및 연마 방법 | |
| TW200940694A (en) | Polishing liquid and polishing method | |
| RU2006104117A (ru) | Абразивные частицы для механической полировки | |
| MY154861A (en) | Polishing liquid composition for magnetic-disk substrate | |
| MY154806A (en) | Compositions and method for cmp of indium tin oxide surfaces | |
| JP6569191B2 (ja) | 研磨剤、研磨剤セット及び基体の研磨方法 | |
| RU2017103686A (ru) | Растворы для полировки и способы их применения | |
| MY161744A (en) | Polishing composition containing hybrid abrasive for nickel-phosphorous coated memory disks | |
| JP2013237147A5 (cg-RX-API-DMAC7.html) | ||
| TW200743666A (en) | Chemical mechanical polishing slurry, CMP process and electronic device process | |
| RU2015139807A (ru) | Полировальная композиция | |
| TWI456035B (zh) | 一種鎢研磨用ｃｍｐ漿料組合物 | |
| CN104371554A (zh) | 氟氧化镧铈稀土抛光液 | |
| WO2014179419A8 (en) | Chemical mechanical planarization slurry composition comprising composite particles, process for removing material using said composition, cmp polishing pad and process for preparing said composition | |
| WO2016045536A3 (zh) | 一种金刚石抛光膜制备方法 | |
| MY179920A (en) | Lapping slurry having a cationic surfactant |