CN102232242B - Cmp用研磨液以及使用该研磨液的研磨方法 - Google Patents
Cmp用研磨液以及使用该研磨液的研磨方法 Download PDFInfo
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- CN102232242B CN102232242B CN200980148395.7A CN200980148395A CN102232242B CN 102232242 B CN102232242 B CN 102232242B CN 200980148395 A CN200980148395 A CN 200980148395A CN 102232242 B CN102232242 B CN 102232242B
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- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229940125904 compound 1 Drugs 0.000 description 1
- 229940126543 compound 14 Drugs 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000004132 cross linking Methods 0.000 description 1
- 239000002178 crystalline material Substances 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- BUMGIEFFCMBQDG-UHFFFAOYSA-N dichlorosilicon Chemical compound Cl[Si]Cl BUMGIEFFCMBQDG-UHFFFAOYSA-N 0.000 description 1
- KZHJGOXRZJKJNY-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Si]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O KZHJGOXRZJKJNY-UHFFFAOYSA-N 0.000 description 1
- 239000002612 dispersion medium Substances 0.000 description 1
- 150000002170 ethers Chemical class 0.000 description 1
- 150000004665 fatty acids Chemical class 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 238000009472 formulation Methods 0.000 description 1
- 230000002068 genetic effect Effects 0.000 description 1
- 125000005842 heteroatom Chemical group 0.000 description 1
- 125000000623 heterocyclic group Chemical group 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 1
- 125000002768 hydroxyalkyl group Chemical group 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- PNDPGZBMCMUPRI-UHFFFAOYSA-N iodine Chemical compound II PNDPGZBMCMUPRI-UHFFFAOYSA-N 0.000 description 1
- 229910052740 iodine Inorganic materials 0.000 description 1
- 239000002563 ionic surfactant Substances 0.000 description 1
- 150000002500 ions Chemical group 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 229920001427 mPEG Polymers 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
- 239000002609 medium Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052863 mullite Inorganic materials 0.000 description 1
- 239000004745 nonwoven fabric Substances 0.000 description 1
- SBOJXQVPLKSXOG-UHFFFAOYSA-N o-amino-hydroxylamine Chemical class NON SBOJXQVPLKSXOG-UHFFFAOYSA-N 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 238000010979 pH adjustment Methods 0.000 description 1
- 239000006174 pH buffer Substances 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- 239000010452 phosphate Substances 0.000 description 1
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 229920002401 polyacrylamide Polymers 0.000 description 1
- 229920002503 polyoxyethylene-polyoxypropylene Polymers 0.000 description 1
- 229920000036 polyvinylpyrrolidone Polymers 0.000 description 1
- 239000001267 polyvinylpyrrolidone Substances 0.000 description 1
- 235000013855 polyvinylpyrrolidone Nutrition 0.000 description 1
- 238000002203 pretreatment Methods 0.000 description 1
- QQONPFPTGQHPMA-UHFFFAOYSA-N propylene Natural products CC=C QQONPFPTGQHPMA-UHFFFAOYSA-N 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 238000010992 reflux Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000007928 solubilization Effects 0.000 description 1
- 238000005063 solubilization Methods 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 210000003813 thumb Anatomy 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000004408 titanium dioxide Substances 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 229910021642 ultra pure water Inorganic materials 0.000 description 1
- 239000012498 ultrapure water Substances 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
- H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Materials Engineering (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
Description
Claims (40)
Priority Applications (1)
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CN201310241712.8A CN103333661B (zh) | 2008-12-11 | 2009-12-10 | Cmp用研磨液以及使用该研磨液的研磨方法 |
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JP2008315531 | 2008-12-11 | ||
JP2008-315531 | 2008-12-11 | ||
JP2009-076520 | 2009-03-26 | ||
JP2009076520 | 2009-03-26 | ||
JP2009092434 | 2009-04-06 | ||
JP2009-092434 | 2009-04-06 | ||
JP2009224780 | 2009-09-29 | ||
JP2009-224780 | 2009-09-29 | ||
PCT/JP2009/070692 WO2010067844A1 (ja) | 2008-12-11 | 2009-12-10 | Cmp用研磨液及びこれを用いた研磨方法 |
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CN201310241746.7A Division CN103342986B (zh) | 2008-12-11 | 2009-12-10 | Cmp用研磨液以及使用该研磨液的研磨方法 |
CN2013102417471A Division CN103333662A (zh) | 2008-12-11 | 2009-12-10 | Cmp用研磨液以及使用该研磨液的研磨方法 |
CN201310241712.8A Division CN103333661B (zh) | 2008-12-11 | 2009-12-10 | Cmp用研磨液以及使用该研磨液的研磨方法 |
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CN102232242A CN102232242A (zh) | 2011-11-02 |
CN102232242B true CN102232242B (zh) | 2014-07-09 |
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CN200980148395.7A Active CN102232242B (zh) | 2008-12-11 | 2009-12-10 | Cmp用研磨液以及使用该研磨液的研磨方法 |
CN201310241712.8A Active CN103333661B (zh) | 2008-12-11 | 2009-12-10 | Cmp用研磨液以及使用该研磨液的研磨方法 |
CN201310241746.7A Active CN103342986B (zh) | 2008-12-11 | 2009-12-10 | Cmp用研磨液以及使用该研磨液的研磨方法 |
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CN2013102417471A Pending CN103333662A (zh) | 2008-12-11 | 2009-12-10 | Cmp用研磨液以及使用该研磨液的研磨方法 |
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CN201310241712.8A Active CN103333661B (zh) | 2008-12-11 | 2009-12-10 | Cmp用研磨液以及使用该研磨液的研磨方法 |
CN201310241746.7A Active CN103342986B (zh) | 2008-12-11 | 2009-12-10 | Cmp用研磨液以及使用该研磨液的研磨方法 |
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US (1) | US9022834B2 (zh) |
JP (3) | JP5397386B2 (zh) |
KR (3) | KR101268615B1 (zh) |
CN (4) | CN103333662A (zh) |
TW (1) | TW201030113A (zh) |
WO (1) | WO2010067844A1 (zh) |
Families Citing this family (36)
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CN103333662A (zh) | 2008-12-11 | 2013-10-02 | 日立化成工业株式会社 | Cmp用研磨液以及使用该研磨液的研磨方法 |
KR101419156B1 (ko) * | 2009-12-28 | 2014-07-11 | 히타치가세이가부시끼가이샤 | Cmp용 연마액 및 이것을 사용한 연마 방법 |
WO2011111421A1 (ja) | 2010-03-12 | 2011-09-15 | 日立化成工業株式会社 | スラリ、研磨液セット、研磨液及びこれらを用いた基板の研磨方法 |
JP5648567B2 (ja) * | 2010-05-07 | 2015-01-07 | 日立化成株式会社 | Cmp用研磨液及びこれを用いた研磨方法 |
CN103374330B (zh) | 2010-11-22 | 2015-10-14 | 日立化成株式会社 | 磨粒的制造方法、悬浮液的制造方法以及研磨液的制造方法 |
WO2012070542A1 (ja) | 2010-11-22 | 2012-05-31 | 日立化成工業株式会社 | スラリー、研磨液セット、研磨液、基板の研磨方法及び基板 |
JP5590144B2 (ja) | 2010-11-22 | 2014-09-17 | 日立化成株式会社 | スラリー、研磨液セット、研磨液、及び、基板の研磨方法 |
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JP6298588B2 (ja) * | 2011-06-22 | 2018-03-20 | 日立化成株式会社 | 洗浄液及び基板の研磨方法 |
CN107617968A (zh) | 2012-02-21 | 2018-01-23 | 日立化成株式会社 | 研磨剂、研磨剂组和基体的研磨方法 |
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US10557059B2 (en) | 2012-05-22 | 2020-02-11 | Hitachi Chemical Company, Ltd. | Slurry, polishing-solution set, polishing solution, substrate polishing method, and substrate |
KR102034328B1 (ko) | 2012-05-22 | 2019-10-18 | 히타치가세이가부시끼가이샤 | 슬러리, 연마액 세트, 연마액, 기체의 연마 방법 및 기체 |
SG11201407029XA (en) | 2012-05-22 | 2014-12-30 | Hitachi Chemical Co Ltd | Slurry, polishing-solution set, polishing solution, substrate polishing method, and substrate |
US9633863B2 (en) * | 2012-07-11 | 2017-04-25 | Cabot Microelectronics Corporation | Compositions and methods for selective polishing of silicon nitride materials |
KR102137293B1 (ko) | 2012-08-30 | 2020-07-23 | 히타치가세이가부시끼가이샤 | 연마제, 연마제 세트 및 기체의 연마 방법 |
KR101338461B1 (ko) | 2012-11-02 | 2013-12-10 | 현대자동차주식회사 | 가변 압축비 장치 |
KR102225154B1 (ko) * | 2013-06-12 | 2021-03-09 | 쇼와덴코머티리얼즈가부시끼가이샤 | Cmp용 연마액 및 연마 방법 |
KR102115548B1 (ko) | 2013-12-16 | 2020-05-26 | 삼성전자주식회사 | 유기물 세정 조성물 및 이를 이용하는 반도체 장치의 제조 방법 |
SG11201610969UA (en) * | 2014-07-09 | 2017-02-27 | Hitachi Chemical Co Ltd | Cmp polishing liquid, and polishing method |
JP2017178972A (ja) * | 2014-08-07 | 2017-10-05 | 日立化成株式会社 | Cmp用研磨液及びこれを用いた研磨方法 |
WO2016136342A1 (ja) * | 2015-02-23 | 2016-09-01 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
JP2017037178A (ja) * | 2015-08-10 | 2017-02-16 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
JP6938855B2 (ja) * | 2016-05-23 | 2021-09-22 | 昭和電工マテリアルズ株式会社 | Cmp用研磨液及びこれを用いた研磨方法 |
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CN108007982B (zh) * | 2017-11-29 | 2020-02-07 | 河北宇天昊远纳米材料有限公司 | 一种延长a-面蓝宝石窗口抛光液使用寿命的方法 |
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JP2013175731A (ja) | 2013-09-05 |
JP5761233B2 (ja) | 2015-08-12 |
JP5761234B2 (ja) | 2015-08-12 |
CN103333662A (zh) | 2013-10-02 |
KR20110083667A (ko) | 2011-07-20 |
US20110275285A1 (en) | 2011-11-10 |
JPWO2010067844A1 (ja) | 2012-05-24 |
JP2013157614A (ja) | 2013-08-15 |
WO2010067844A1 (ja) | 2010-06-17 |
CN103333661A (zh) | 2013-10-02 |
CN103342986B (zh) | 2015-01-07 |
TW201030113A (en) | 2010-08-16 |
CN103333661B (zh) | 2015-08-19 |
CN102232242A (zh) | 2011-11-02 |
KR101268615B1 (ko) | 2013-06-04 |
US9022834B2 (en) | 2015-05-05 |
CN103342986A (zh) | 2013-10-09 |
KR101359197B1 (ko) | 2014-02-06 |
KR20120123611A (ko) | 2012-11-08 |
KR20130063550A (ko) | 2013-06-14 |
KR101377902B1 (ko) | 2014-03-24 |
JP5397386B2 (ja) | 2014-01-22 |
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